| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FCI7N60 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FCA47N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FCA47N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO3P Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NL27WZ86USG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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| CPH6001A-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 0.1A Power dissipation: 0.8W Case: CPH6 Mounting: SMD Kind of package: reel; tape |
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| CPH6003A-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 0.15A Power dissipation: 0.8W Case: CPH6 Mounting: SMD Kind of package: reel; tape Frequency: 7GHz |
Produkt ist nicht verfügbar |
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| BZX79C2V7-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MBR8170TFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. forward voltage: 0.89V Max. forward impulse current: 140A Leakage current: 30µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NRVTS360ETFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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H11AV1AM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Mounting: THT Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 15µs Case: DIP6 Turn-off time: 15µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 100-300%@10mA Kind of output: transistor |
auf Bestellung 1667 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDH300ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
auf Bestellung 6310 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDH300A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk |
auf Bestellung 3030 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDH300TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FDH333 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Case: DO35 Kind of package: bulk Max. forward voltage: 1.15V Power dissipation: 0.5W Max. load current: 0.6A Leakage current: 0.5µA Capacitance: 6pF |
auf Bestellung 894 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDH333TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NTR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 10A |
auf Bestellung 2009 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NVR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 10A Power dissipation: 1.25W Gate charge: 6nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhancement Drain-source voltage: 20V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: SOT23 On-state resistance: 0.105Ω |
auf Bestellung 541 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SZMMSZ4708T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ4xxTxG Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TIP110 | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMSZ4684T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ4xxTxG |
auf Bestellung 2695 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74VHC1G00DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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HUF76423P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB Mounting: THT Power dissipation: 85W Gate charge: 34nC Polarisation: unipolar Technology: UltraFET® Drain current: 23A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: tube Case: TO220AB On-state resistance: 35mΩ |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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2V7002LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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2N7000 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Power dissipation: 0.4W Technology: DMOS |
auf Bestellung 9617 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FCPF600N65S3R0L-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 650V; 6A; 24W; TO220 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 6A Power dissipation: 24W Case: TO220 Gate-source voltage: 30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 11nC Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FCPF600N60ZL1-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.4A Pulsed drain current: 22.2A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTPF600N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 21A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDC6321C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 25/-25V Drain current: 0.68/-0.46A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 720/1220mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.3/1.5nC |
auf Bestellung 902 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC6303N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.3nC |
auf Bestellung 1620 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC638APZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 72mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC604P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 30nC |
auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC608PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6 Mounting: SMD Power dissipation: 1.6W Gate charge: 23nC Polarisation: unipolar Technology: PowerTrench® Drain current: -5.8A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 43mΩ |
auf Bestellung 2082 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC658P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC |
auf Bestellung 1594 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC653N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 16nC |
auf Bestellung 467 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC606P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -6A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 53mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 25nC |
auf Bestellung 2055 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC645N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 48mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC638P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 72mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC610PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC602P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 53mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2771 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC637AN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 16nC |
auf Bestellung 2246 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDC637BNZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC |
auf Bestellung 1120 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 4A Reverse recovery time: 50ns Semiconductor structure: double independent Case: DFN8 Max. forward voltage: 1.05V Max. load current: 8A Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 4A Reverse recovery time: 50ns Semiconductor structure: double independent Case: DFN8 Max. forward voltage: 1.05V Max. load current: 8A Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FFSD08120A | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 22.5A Semiconductor structure: single diode Max. forward voltage: 1.75V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FCB099N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 227W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 61nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FCB199N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Power dissipation: 98W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.199Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 30nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FCH099N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 227W Case: TO247 Gate-source voltage: ±30V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 61nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NVB099N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 227W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 61nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FCPF099N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 57nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FCMT099N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 227W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 56nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTMFS6H848NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Pulsed drain current: 319A Power dissipation: 37W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BZX84B12LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; single diode; reel,tape; BZX84B Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Case: SOT23 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84B |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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H11N1M | ONSEMI |
 Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Case: DIP6 Turn-on time: 0.1µs Turn-off time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDP8860 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB Mounting: THT Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 3.8mΩ Pulsed drain current: 556A Power dissipation: 254W Gate charge: 222nC Polarisation: unipolar Drain current: 80A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDS3992 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 123mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2484 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6303N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W Type of transistor: N-MOSFET x2 Technology: DMOS Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.5A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 On-state resistance: 770mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.3A Gate charge: 2.3nC Features of semiconductor devices: logic level |
auf Bestellung 3375 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDP20N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CAT25128HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Access time: 140ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 128kb EEPROM Kind of interface: serial Memory organisation: 16kx8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FIN1215MTDX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; 595Mbps; LVTTL; LVDS; SMD; TSSOP48; IN: 21; 3÷3.6V Mounting: SMD Operating temperature: -40...85°C Data transfer rate: 595Mbps Technology: LVTTL Number of inputs: 21 Case: TSSOP48 Interface: LVDS Supply voltage: 3...3.6V Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MMSZ5243B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FCI7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCA47N60-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCA47N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NL27WZ86USG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPH6001A-TL-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.8W
Case: CPH6
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.8W
Case: CPH6
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPH6003A-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.8W
Case: CPH6
Mounting: SMD
Kind of package: reel; tape
Frequency: 7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.8W
Case: CPH6
Mounting: SMD
Kind of package: reel; tape
Frequency: 7GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79C2V7-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBR8170TFSTAG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| NRVTS360ETFSTAG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| H11AV1AM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
| FDH300ATR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
auf Bestellung 6310 Stücke:
Lieferzeit 14-21 Tag (e)
| FDH300A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
auf Bestellung 3030 Stücke:
Lieferzeit 14-21 Tag (e)
| FDH300TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDH333 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1.15V
Power dissipation: 0.5W
Max. load current: 0.6A
Leakage current: 0.5µA
Capacitance: 6pF
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1.15V
Power dissipation: 0.5W
Max. load current: 0.6A
Leakage current: 0.5µA
Capacitance: 6pF
auf Bestellung 894 Stücke:
Lieferzeit 14-21 Tag (e)
| FDH333TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTR4501NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
auf Bestellung 2009 Stücke:
Lieferzeit 14-21 Tag (e)
| NVR4501NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.105Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.105Ω
auf Bestellung 541 Stücke:
Lieferzeit 14-21 Tag (e)
| SZMMSZ4708T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Produkt ist nicht verfügbar
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| TIP110 |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| MMSZ4684T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
auf Bestellung 2695 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74VHC1G00DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| HUF76423P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB
Mounting: THT
Power dissipation: 85W
Gate charge: 34nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: tube
Case: TO220AB
On-state resistance: 35mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB
Mounting: THT
Power dissipation: 85W
Gate charge: 34nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: tube
Case: TO220AB
On-state resistance: 35mΩ
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
| 2V7002LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7000 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Power dissipation: 0.4W
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Power dissipation: 0.4W
Technology: DMOS
auf Bestellung 9617 Stücke:
Lieferzeit 14-21 Tag (e)
| FCPF600N65S3R0L-F154 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 24W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 24W
Case: TO220
Gate-source voltage: 30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of channel: enhancement
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 24W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 24W
Case: TO220
Gate-source voltage: 30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| FCPF600N60ZL1-F154 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF600N80S3Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| FDC6321C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.3/1.5nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.3/1.5nC
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC6303N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.3nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.3nC
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC638APZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC604P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC608PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 23nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 43mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 23nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 43mΩ
auf Bestellung 2082 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC658P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
auf Bestellung 1594 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC653N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 16nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 16nC
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC606P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 25nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 25nC
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC645N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC638P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC610PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC602P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2771 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC637AN |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 16nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 16nC
auf Bestellung 2246 Stücke:
Lieferzeit 14-21 Tag (e)
| FDC637BNZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
auf Bestellung 1120 Stücke:
Lieferzeit 14-21 Tag (e)
| NRVHP820MFDT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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| NRVHP820MFDT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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| FFSD08120A |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22.5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22.5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
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| FCB099N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
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| FCB199N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 30nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 30nC
Produkt ist nicht verfügbar
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| FCH099N65S3-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
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| NVB099N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Produkt ist nicht verfügbar
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| FCPF099N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 57nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 57nC
Produkt ist nicht verfügbar
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| FCMT099N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 56nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 56nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTMFS6H848NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| BZX84B12LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; single diode; reel,tape; BZX84B
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Case: SOT23
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84B
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; single diode; reel,tape; BZX84B
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Case: SOT23
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84B
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
| H11N1M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 0.1µs
Turn-off time: 150ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 0.1µs
Turn-off time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| FDP8860 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Mounting: THT
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 3.8mΩ
Pulsed drain current: 556A
Power dissipation: 254W
Gate charge: 222nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Mounting: THT
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 3.8mΩ
Pulsed drain current: 556A
Power dissipation: 254W
Gate charge: 222nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
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| FDS3992 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
| FDG6303N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.3A
Gate charge: 2.3nC
Features of semiconductor devices: logic level
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.3A
Gate charge: 2.3nC
Features of semiconductor devices: logic level
auf Bestellung 3375 Stücke:
Lieferzeit 14-21 Tag (e)
| FDP20N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CAT25128HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 140ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 140ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FIN1215MTDX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; 595Mbps; LVTTL; LVDS; SMD; TSSOP48; IN: 21; 3÷3.6V
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 595Mbps
Technology: LVTTL
Number of inputs: 21
Case: TSSOP48
Interface: LVDS
Supply voltage: 3...3.6V
Type of integrated circuit: interface
Category: Interfaces others - integrated circuits
Description: IC: interface; 595Mbps; LVTTL; LVDS; SMD; TSSOP48; IN: 21; 3÷3.6V
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 595Mbps
Technology: LVTTL
Number of inputs: 21
Case: TSSOP48
Interface: LVDS
Supply voltage: 3...3.6V
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MMSZ5243B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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