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NTBG025N065SC1 ONSEMI ntbg025n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NTMYS025N06CLTWG ONSEMI ntmys025n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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US2JA ONSEMI us2aa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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NRVUS2JA NRVUS2JA ONSEMI us2aa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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BC549CG BC549CG ONSEMI bc550c-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
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NTMT185N60S5H ONSEMI ntmt185n60s5h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 53A
Power dissipation: 116W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDPF12N50T FDPF12N50T ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B3A35528DD2A17&compId=FDP12N50.pdf?ci_sign=2d34bc5657a95a8e6474b335ed20b5e8739aabf0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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FDB12N50FTM-WS FDB12N50FTM-WS ONSEMI fdb12n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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FDB12N50TM ONSEMI fdb12n50tm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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US1KFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVUS1KFA NRVUS1KFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.7V
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NTP110N65S3HF ONSEMI ntp110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTMT110N65S3HF ONSEMI ntmt110n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTPF110N65S3HF ONSEMI ntpf110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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MM3Z3V3T1G MM3Z3V3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
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MM5Z3V3T1G MM5Z3V3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
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NTBLS1D1N08H ONSEMI ntbls1d1n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 311W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
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NTBLS1D5N08MC ONSEMI ntbls1d5n08mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.9W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
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NTBLS1D5N10MCTXG ONSEMI NTBLS1D5N10MC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
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NTBLS1D7N08H ONSEMI ntbls1d7n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
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NTBLS1D7N10MCTXG ONSEMI NTBLS1D7N10MC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
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BSR58 BSR58 ONSEMI bsr58-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
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182+0.39 EUR
305+0.23 EUR
353+0.2 EUR
562+0.13 EUR
589+0.12 EUR
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NZL7V5AXV3T1G ONSEMI nzl5v6axv3t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 5V
Kind of package: reel; tape
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SZNZL7V5AXV3T1G ONSEMI NZL5V6AXV3T1-D.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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NTE4151PT1G NTE4151PT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A1B183D144745&compId=NTA4153N.PDF?ci_sign=01a5609438402e6bd1124b75d4f75378f43335a4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.1nC
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SS32 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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NB6L11SMNG ONSEMI nb6l11s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 2; CMOS,LVDS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3.8V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 2
Technology: CMOS; LVDS; TTL
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NTD20N06T4G ONSEMI ntd20n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTDV20N06T4G-VF01 ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDPF320N06L FDPF320N06L ONSEMI fdpf320n06l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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MC74AC125DR2G MC74AC125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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SZESD7351HT1G ONSEMI esd7351-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDA16N50-F109 FDA16N50-F109 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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1N5239BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
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FDG1024NZ FDG1024NZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEAA033AFB1E28&compId=FDG1024NZ.pdf?ci_sign=2dd81f2da8a73f94804271db1a5248d982297911 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Gate charge: 2.6nC
On-state resistance: 389mΩ
Power dissipation: 0.36W
Gate-source voltage: ±8V
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FST3125DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
Produkt ist nicht verfügbar
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FST3125MTCX FST3125MTCX ONSEMI 74fst3125.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
Produkt ist nicht verfügbar
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NCP130BMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Manufacturer series: NCP130
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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NCP130AMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Manufacturer series: NCP130
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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NTBG030N120M3S ONSEMI NTBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Produkt ist nicht verfügbar
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FGH75T65SHDTL4 ONSEMI fgh75t65shdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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FGH75T65SQDNL4 ONSEMI fgh75t65sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NCP51145MNTAG NCP51145MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 1.8A
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 1...5.5/4.75...5.5V DC
Output voltage: 0.6...2.5V DC
Produkt ist nicht verfügbar
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NCP51510MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 3A
Output voltage: 0.5...1.5V
Number of channels: 1
Operating voltage: 1.1...3.6/2.7...3.6V DC
Case: DFN10
Application: for DDR memories
Produkt ist nicht verfügbar
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NCV51510MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 3A
Output voltage: 0.5...1.5V
Number of channels: 1
Operating voltage: 1.1...3.6/2.7...3.6V DC
Case: DFN10
Application: automotive industry; for DDR memories
Produkt ist nicht verfügbar
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1SMA5918BT3G 1SMA5918BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 2214 Stücke:
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162+0.44 EUR
216+0.33 EUR
285+0.25 EUR
538+0.13 EUR
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NTBG020N120SC1 ONSEMI ntbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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MOC8050M MOC8050M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 500%@10mA
Produkt ist nicht verfügbar
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NTLJS2103PTBG ONSEMI ntljs2103p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -24A
Mounting: SMD
Case: WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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SM24T1G SM24T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
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250+0.29 EUR
379+0.19 EUR
658+0.11 EUR
770+0.093 EUR
820+0.087 EUR
1000+0.086 EUR
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FCB260N65S3 FCB260N65S3 ONSEMI fcb260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 797 Stücke:
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28+2.62 EUR
29+2.47 EUR
100+2.37 EUR
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FCD260N65S3 ONSEMI fcd260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF360N65S3H ONSEMI ntpf360n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NL17SZ125XV5T2G ONSEMI NL17SZ125-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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FDD850N10L FDD850N10L ONSEMI fdd850n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2167 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
67+1.07 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 52
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FDB150N10 ONSEMI fdb150n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 110W
Pulsed drain current: 228A
Produkt ist nicht verfügbar
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NTND31225CZTAG ONSEMI ntnd31225cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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MC33262DR2G ONSEMI mc34262-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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MC33262PG ONSEMI mc34262-d.pdf description Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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NTBG025N065SC1 ntbg025n065sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NTMYS025N06CLTWG ntmys025n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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US2JA us2aa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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NRVUS2JA us2aa-d.pdf
NRVUS2JA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BC549CG bc550c-d.pdf
BC549CG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Produkt ist nicht verfügbar
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NTMT185N60S5H ntmt185n60s5h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 53A
Power dissipation: 116W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDPF12N50T pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B3A35528DD2A17&compId=FDP12N50.pdf?ci_sign=2d34bc5657a95a8e6474b335ed20b5e8739aabf0
FDPF12N50T
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
33+2.19 EUR
38+1.93 EUR
43+1.67 EUR
46+1.57 EUR
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FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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FDB12N50TM fdb12n50tm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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US1KFA us1mfa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVUS1KFA us1mfa-d.pdf
NRVUS1KFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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NTP110N65S3HF ntp110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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NTMT110N65S3HF ntmt110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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NTPF110N65S3HF ntpf110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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MM3Z3V3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z3V3T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
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MM5Z3V3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc
MM5Z3V3T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
auf Bestellung 4573 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
658+0.11 EUR
962+0.074 EUR
1124+0.064 EUR
1303+0.055 EUR
1725+0.041 EUR
1825+0.039 EUR
3000+0.038 EUR
Mindestbestellmenge: 455
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NTBLS1D1N08H ntbls1d1n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 311W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Produkt ist nicht verfügbar
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NTBLS1D5N08MC ntbls1d5n08mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.9W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Produkt ist nicht verfügbar
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NTBLS1D5N10MCTXG NTBLS1D5N10MC-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Produkt ist nicht verfügbar
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NTBLS1D7N08H ntbls1d7n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
Produkt ist nicht verfügbar
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NTBLS1D7N10MCTXG NTBLS1D7N10MC-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Produkt ist nicht verfügbar
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BSR58 bsr58-d.pdf
BSR58
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
182+0.39 EUR
305+0.23 EUR
353+0.2 EUR
562+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 143
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NZL7V5AXV3T1G nzl5v6axv3t1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SZNZL7V5AXV3T1G NZL5V6AXV3T1-D.PDF
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NTE4151PT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A1B183D144745&compId=NTA4153N.PDF?ci_sign=01a5609438402e6bd1124b75d4f75378f43335a4
NTE4151PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.1nC
auf Bestellung 5890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
758+0.094 EUR
1021+0.07 EUR
1145+0.062 EUR
1292+0.055 EUR
1389+0.051 EUR
2591+0.028 EUR
2748+0.026 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
SS32 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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NB6L11SMNG nb6l11s-d.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 2; CMOS,LVDS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3.8V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 2
Technology: CMOS; LVDS; TTL
Produkt ist nicht verfügbar
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NTD20N06T4G ntd20n06-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTDV20N06T4G-VF01
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDPF320N06L fdpf320n06l-d.pdf
FDPF320N06L
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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MC74AC125DR2G mc74ac125-d.pdf
MC74AC125DR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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SZESD7351HT1G esd7351-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDA16N50-F109 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3
FDA16N50-F109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Produkt ist nicht verfügbar
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FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
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1N5239BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDG1024NZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEAA033AFB1E28&compId=FDG1024NZ.pdf?ci_sign=2dd81f2da8a73f94804271db1a5248d982297911
FDG1024NZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Gate charge: 2.6nC
On-state resistance: 389mΩ
Power dissipation: 0.36W
Gate-source voltage: ±8V
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FST3125DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
Produkt ist nicht verfügbar
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FST3125MTCX 74fst3125.pdf
FST3125MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
Produkt ist nicht verfügbar
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NCP130BMX080TCG ncp130-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Manufacturer series: NCP130
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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NCP130AMX080TCG ncp130-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Manufacturer series: NCP130
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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NTBG030N120M3S NTBG030N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Produkt ist nicht verfügbar
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FGH75T65SHDTL4 fgh75t65shdtl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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FGH75T65SQDNL4 fgh75t65sqdnl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NCP51145MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a
NCP51145MNTAG
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 1.8A
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 1...5.5/4.75...5.5V DC
Output voltage: 0.6...2.5V DC
Produkt ist nicht verfügbar
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NCP51510MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 3A
Output voltage: 0.5...1.5V
Number of channels: 1
Operating voltage: 1.1...3.6/2.7...3.6V DC
Case: DFN10
Application: for DDR memories
Produkt ist nicht verfügbar
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NCV51510MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 3A
Output voltage: 0.5...1.5V
Number of channels: 1
Operating voltage: 1.1...3.6/2.7...3.6V DC
Case: DFN10
Application: automotive industry; for DDR memories
Produkt ist nicht verfügbar
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1SMA5918BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5918BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 2214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
216+0.33 EUR
285+0.25 EUR
538+0.13 EUR
Mindestbestellmenge: 162
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NTBG020N120SC1 ntbg020n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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MOC8050M pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72
MOC8050M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 500%@10mA
Produkt ist nicht verfügbar
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NTLJS2103PTBG ntljs2103p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -24A
Mounting: SMD
Case: WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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SM24T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5
SM24T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
auf Bestellung 2704 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
379+0.19 EUR
658+0.11 EUR
770+0.093 EUR
820+0.087 EUR
1000+0.086 EUR
Mindestbestellmenge: 250
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FCB260N65S3 fcb260n65s3-d.pdf
FCB260N65S3
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
28+2.62 EUR
29+2.47 EUR
100+2.37 EUR
Mindestbestellmenge: 19
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FCD260N65S3 fcd260n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF360N65S3H ntpf360n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NL17SZ125XV5T2G NL17SZ125-D.PDF
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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FDD850N10L fdd850n10l-d.pdf
FDD850N10L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
67+1.07 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 52
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FDB150N10 fdb150n10-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 110W
Pulsed drain current: 228A
Produkt ist nicht verfügbar
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NTND31225CZTAG ntnd31225cz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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MC33262DR2G mc34262-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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MC33262PG description mc34262-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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