| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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NTB110N65S3HF | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTP110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVB110N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 58nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTHL110N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.5A Power dissipation: 240W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 58nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NTMT110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NTPF110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NVHL110N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 58nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVHL110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 58nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDN306P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.6A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 80mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate-source voltage: ±8V |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN358P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate-source voltage: ±20V |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH029N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.8A Power dissipation: 463W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 201nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTHL019N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 73A Power dissipation: 625W Case: TO247 Gate-source voltage: ±30V On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 328A Gate charge: 282nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBD914 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 4pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDD770N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2417 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C5V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Case: DO41 Mounting: THT Tolerance: ±5% Manufacturer series: BZX85C Kind of package: bulk Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBTA92 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC7815BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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S1MFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 4pF |
auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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S1MFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.2A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NRVS1MFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 1A; 2us; SOD123F; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FNB35060T | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; 50A; Uoper: 600V; Usup: 300V; Uinsul: 2.5kV; Uce: 600V Insulation voltage: 2.5kV Operating voltage: 600V Mounting: THT Supply voltage: 300V Collector-emitter voltage: 600V Output current: 50A Type of integrated circuit: driver DC supply current: 11mA Operating temperature: -40...150°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SZMM3Z5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G Application: automotive industry |
auf Bestellung 814 Stücke: Lieferzeit 14-21 Tag (e) |
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MM5Z4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5Z |
auf Bestellung 3426 Stücke: Lieferzeit 14-21 Tag (e) |
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MID400 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V Type of optocoupler: optocoupler Turn-on time: 1µs Output voltage: 7V Case: DIP8 Turn-off time: 1µs Number of channels: 1 Mounting: THT Kind of output: logic Insulation voltage: 2.5kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZBZX84C9V1ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZBZX84C9V1LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBT2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LM317T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 1.5A Case: TO220-3 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Heatsink thickness: 0.51...0.61mm Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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GBU8J | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MOC3063M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Manufacturer series: MOC3063M Output voltage: 600V |
auf Bestellung 783 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC1GU04DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; TSOP5; -55÷125°C; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Quiescent current: 1µA Kind of integrated circuit: inverter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC74HC1GU04DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC74HC1GU04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC74HC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NZT605 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 110V Collector current: 1.5A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDP80N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 320A Power dissipation: 176W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP1342AMDCDAD1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 9÷28V; flyback; Ubr: 700V Operating temperature: -40...125°C Breakdown voltage: 700V Input voltage: 9...28V Type of integrated circuit: PMIC Topology: flyback Mounting: SMD |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14073BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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74ACT00SC | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; ACT; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Manufacturer series: ACT Quiescent current: 20µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NVMFS5C410NWFET1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 920µΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDBL0110N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 170nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDBL86561-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMFS5C410NAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 920µΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCS2202SN2T1G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5 Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Delay time: 1.08µs Operating voltage: 0.85...6V Mounting: SMT Case: SOT23-5 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Kind of output: open drain Input bias current: 1pA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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74LVX4245MTCX | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.7...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: LVX Kind of output: 3-state |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MG2040MUTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape Number of channels: 14 Application: HDMI Mounting: SMD Breakdown voltage: 5.5V Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Case: uDFN18 Type of diode: TVS array |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| EMI7204MUTAG | ONSEMI |
Category: Filters - integrated circuits Description: Filter: digital; EMI; uDFN8; 250MHz; Ch: 4 Number of channels: 4 Mounting: SMD Cutoff frequency: 250MHz Type of filter: digital Case: uDFN8 Kind of filter: EMI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZMG2040MUTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; uDFN18; Ch: 14; reel,tape Number of channels: 14 Application: automotive industry Mounting: SMD Kind of package: reel; tape Semiconductor structure: unidirectional Case: uDFN18 Type of diode: TVS array |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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|
MC14011UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 100ns Family: HEF4000B |
auf Bestellung 367 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14011BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 100ns Family: HEF4000B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC14011UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 100ns Family: HEF4000B |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NL17SZU04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
FDH055N15A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Case: TO247 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 429W |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD5101FCT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3.68÷6.5V; bidirectional; 01005; reel,tape Max. off-state voltage: 3.3V Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS Case - inch: 01005 Case - mm: 0402 Mounting: SMD Breakdown voltage: 3.68...6.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
74LVX244MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...3.6V DC Technology: CMOS Manufacturer series: LVX |
auf Bestellung 869 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C604NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 203A Power dissipation: 100W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS5C673NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 23W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
TL431BCDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
1SMB5936BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 30V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
auf Bestellung 2348 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB110N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTP110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB110N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL110N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT110N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTPF110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVHL110N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN306P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±8V
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 124+ | 0.68 EUR |
| FDN358P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±20V
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 124+ | 0.69 EUR |
| 141+ | 0.61 EUR |
| 187+ | 0.45 EUR |
| 211+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| FCH029N65S3-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 201nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 201nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL019N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 328A
Gate charge: 282nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 328A
Gate charge: 282nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD914 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDD770N15A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 1.93 EUR |
| 66+ | 1.31 EUR |
| 73+ | 1.17 EUR |
| 100+ | 0.98 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.81 EUR |
| BZX85C5V6 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: BZX85C
Kind of package: bulk
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: BZX85C
Kind of package: bulk
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA92 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| MC7815BDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S1MFL |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 4pF
auf Bestellung 717 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 228+ | 0.37 EUR |
| 350+ | 0.24 EUR |
| 461+ | 0.19 EUR |
| 511+ | 0.17 EUR |
| 640+ | 0.13 EUR |
| S1MFP |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVS1MFL |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 2us; SOD123F; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 2us; SOD123F; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FNB35060T |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 50A; Uoper: 600V; Usup: 300V; Uinsul: 2.5kV; Uce: 600V
Insulation voltage: 2.5kV
Operating voltage: 600V
Mounting: THT
Supply voltage: 300V
Collector-emitter voltage: 600V
Output current: 50A
Type of integrated circuit: driver
DC supply current: 11mA
Operating temperature: -40...150°C
Category: MOSFET/IGBT drivers
Description: IC: driver; 50A; Uoper: 600V; Usup: 300V; Uinsul: 2.5kV; Uce: 600V
Insulation voltage: 2.5kV
Operating voltage: 600V
Mounting: THT
Supply voltage: 300V
Collector-emitter voltage: 600V
Output current: 50A
Type of integrated circuit: driver
DC supply current: 11mA
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZMM3Z5V1T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 432+ | 0.2 EUR |
| 613+ | 0.14 EUR |
| 706+ | 0.12 EUR |
| 814+ | 0.1 EUR |
| MM5Z4V7T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z
auf Bestellung 3426 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 385+ | 0.23 EUR |
| 685+ | 0.12 EUR |
| 1069+ | 0.08 EUR |
| 1266+ | 0.067 EUR |
| 1475+ | 0.057 EUR |
| 1695+ | 0.05 EUR |
| 1780+ | 0.048 EUR |
| 2033+ | 0.042 EUR |
| 2093+ | 0.04 EUR |
| MID400 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Output voltage: 7V
Case: DIP8
Turn-off time: 1µs
Number of channels: 1
Mounting: THT
Kind of output: logic
Insulation voltage: 2.5kV
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Output voltage: 7V
Case: DIP8
Turn-off time: 1µs
Number of channels: 1
Mounting: THT
Kind of output: logic
Insulation voltage: 2.5kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| SZBZX84C9V1ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C9V1LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT2222A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LM317T |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
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| GBU8J |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3063M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 126+ | 0.68 EUR |
| 141+ | 0.61 EUR |
| 154+ | 0.56 EUR |
| 166+ | 0.51 EUR |
| MC74HC1GU04DBVT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; TSOP5; -55÷125°C; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; TSOP5; -55÷125°C; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Kind of integrated circuit: inverter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC1GU04DFT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC1GU04DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC1GU04DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NZT605 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| 117+ | 0.73 EUR |
| 196+ | 0.44 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.31 EUR |
| BSS138 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDP80N06 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1342AMDCDAD1R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 9÷28V; flyback; Ubr: 700V
Operating temperature: -40...125°C
Breakdown voltage: 700V
Input voltage: 9...28V
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 9÷28V; flyback; Ubr: 700V
Operating temperature: -40...125°C
Breakdown voltage: 700V
Input voltage: 9...28V
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1 EUR |
| MC14073BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74ACT00SC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; ACT; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: ACT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; ACT; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: ACT
Quiescent current: 20µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
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| NVMFS5C410NWFET1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDBL0110N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| FDBL86561-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C410NAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS2202SN2T1G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Delay time: 1.08µs
Operating voltage: 0.85...6V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Kind of output: open drain
Input bias current: 1pA
Application: automotive industry
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Delay time: 1.08µs
Operating voltage: 0.85...6V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Kind of output: open drain
Input bias current: 1pA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVX4245MTCX |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Kind of output: 3-state
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MG2040MUTAG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: HDMI
Mounting: SMD
Breakdown voltage: 5.5V
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: uDFN18
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: HDMI
Mounting: SMD
Breakdown voltage: 5.5V
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: uDFN18
Type of diode: TVS array
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EMI7204MUTAG |
|
Hersteller: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; uDFN8; 250MHz; Ch: 4
Number of channels: 4
Mounting: SMD
Cutoff frequency: 250MHz
Type of filter: digital
Case: uDFN8
Kind of filter: EMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; uDFN8; 250MHz; Ch: 4
Number of channels: 4
Mounting: SMD
Cutoff frequency: 250MHz
Type of filter: digital
Case: uDFN8
Kind of filter: EMI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMG2040MUTAG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: uDFN18
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: uDFN18
Type of diode: TVS array
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC14011UBDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 100ns
Family: HEF4000B
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 220+ | 0.39 EUR |
| 246+ | 0.35 EUR |
| 268+ | 0.32 EUR |
| 288+ | 0.3 EUR |
| 313+ | 0.27 EUR |
| MC14011BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14011UBDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NL17SZU04DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDH055N15A |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 429W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 429W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.54 EUR |
| 11+ | 8.19 EUR |
| 12+ | 7.56 EUR |
| 30+ | 7.33 EUR |
| ESD5101FCT5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.68÷6.5V; bidirectional; 01005; reel,tape
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Case - inch: 01005
Case - mm: 0402
Mounting: SMD
Breakdown voltage: 3.68...6.5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.68÷6.5V; bidirectional; 01005; reel,tape
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Case - inch: 01005
Case - mm: 0402
Mounting: SMD
Breakdown voltage: 3.68...6.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVX244MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...3.6V DC
Technology: CMOS
Manufacturer series: LVX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...3.6V DC
Technology: CMOS
Manufacturer series: LVX
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 99+ | 0.87 EUR |
| 137+ | 0.62 EUR |
| 153+ | 0.56 EUR |
| 175+ | 0.49 EUR |
| 250+ | 0.45 EUR |
| 500+ | 0.44 EUR |
| NVMFS5C604NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C673NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TL431BCDR2G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5936BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
auf Bestellung 2348 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 226+ | 0.38 EUR |
| 264+ | 0.32 EUR |
| 394+ | 0.21 EUR |
| 468+ | 0.18 EUR |
| 550+ | 0.15 EUR |