| Foto | Bezeichnung | Hersteller | Beschreibung |
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74LCX373MTCX | ONSEMI |
 Category: LatchesDescription: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Trigger: level-triggered Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74LCX373DTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 1.5...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs Kind of package: tube |
Produkt ist nicht verfügbar |
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MC74LCX373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Trigger: level-triggered |
Produkt ist nicht verfügbar |
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FQP2N40-F080 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 40W Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 7.2A Drain-source voltage: 400V Drain current: 1.14A On-state resistance: 5.8Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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FDN327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS8023S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56 Mounting: SMD Drain-source voltage: 30V Drain current: 49A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 57nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Case: Power56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCN5150DG | ONSEMI |
Category: RS232 / RS422 / RS485 - integr. circ. Description: IC: interface Type of integrated circuit: interface |
auf Bestellung 229 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR20F30NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: DSN0603-2 Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.48V Max. forward impulse current: 28A Kind of package: reel; tape Max. load current: 4A |
auf Bestellung 984 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR0620P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape Mounting: SMD Case: SOD923 Kind of package: reel; tape Max. off-state voltage: 20V Max. forward voltage: 0.52V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 1A Type of diode: Schottky switching |
auf Bestellung 4916 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSR0230M2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape Mounting: SMD Case: SOD723 Kind of package: reel; tape Max. off-state voltage: 30V Max. forward voltage: 0.5V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Type of diode: Schottky switching |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB8447L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 60W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMD8280 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 160A Power dissipation: 38W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74ACT574DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state Operating temperature: -40...85°C Case: SO20-W Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Number of channels: 8 Kind of output: 3-state Trigger: positive-edge-triggered Manufacturer series: ACT Kind of integrated circuit: D flip-flop Mounting: SMD |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMF05CT2G | ONSEMI |
Category: Diodes - Unclassified Description: SMF05CT2G |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB12N50TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC Technology: DMOS; UniFET™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 46A Drain-source voltage: 500V Drain current: 6.9A On-state resistance: 0.65Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MUR1540G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. load current: 30A Reverse recovery time: 60ns |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX79C8V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.7µA |
auf Bestellung 1887 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3072TVM | ONSEMI |
Category: Optotriacs Description: Optotriac Type of optocoupler: optotriac |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS360BT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.63V |
auf Bestellung 2501 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZNUP2105LT3G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP42TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSP42BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 40 Mounting: THT Kind of package: bulk Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSQ500L | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 700V; 130kHz; Ch: 1; 41Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Case: SOT223 On-state resistance: 41Ω Topology: flyback Frequency: 130kHz Output voltage: 700V Application: SMPS Input voltage: 85...265V Duty cycle factor: 54...66% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MUN5114DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMF15CT1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS array; 100W; 17÷19V; 5A; common anode; SC88; reel,tape Type of diode: TVS array Peak pulse power dissipation: 0.1kW Max. off-state voltage: 15V Breakdown voltage: 17...19V Max. forward impulse current: 5A Semiconductor structure: common anode Case: SC88 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Number of channels: 5 Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SZMM5Z4678T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD523F; single diode Manufacturer series: MM5Z4xxxT1G Semiconductor structure: single diode Zener voltage: 1.8V Application: automotive industry Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD523F Tolerance: ±5% |
Produkt ist nicht verfügbar |
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74LCX245MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SZMMSZ5225BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
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MC74VHCT50ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Mounting: SMD Case: TSSOP14 Manufacturer series: VHCT Supply voltage: 2...5.5V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74HC1G00DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 4N37SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS10C4D2N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56 Mounting: SMD Drain-source voltage: 100V Drain current: 48A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 510A Case: Power56 |
Produkt ist nicht verfügbar |
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| MJD32CT4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape Current gain: 10...50 Frequency: 3MHz |
Produkt ist nicht verfügbar |
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDME1034CZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.8/-2.6A; 1.4W; uDFN6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 3.8/-2.6A Power dissipation: 1.4W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 530/160mΩ Mounting: SMD Gate charge: 7.7/4.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FQD4P25TM-WS | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -1.96A; 45W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -1.96A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FQD4P40TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -1.71A |
Produkt ist nicht verfügbar |
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| SFP9530 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Power dissipation: 66W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Drain current: -7.5A |
Produkt ist nicht verfügbar |
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FQT3P20TF | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.53A; 2.5W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -530mA |
Produkt ist nicht verfügbar |
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FQB8P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -32A Power dissipation: 65W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC Drain current: -5.7A |
Produkt ist nicht verfügbar |
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FQP15P12 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Pulsed drain current: -60A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 38nC Drain current: -10.6A |
Produkt ist nicht verfügbar |
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FQD3P50TM-AM002BLT | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 23nC Drain current: -1.33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FQD5P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.28A; Idm: -14.4A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -14.4A Power dissipation: 25W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.2nC Drain current: -2.28A |
Produkt ist nicht verfügbar |
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| FQU5P20TU | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; Idm: -14.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -14.8A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13nC Drain current: -2.34A |
Produkt ist nicht verfügbar |
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FQT2P25TF | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.35A; Idm: -2.2A; 2.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Pulsed drain current: -2.2A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.5nC Drain current: -0.35A |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -37.6A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 27nC Application: automotive industry Drain current: -6A |
Produkt ist nicht verfügbar |
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FQD3P50TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 23nC Application: automotive industry Drain current: -1.33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSL117MRIN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback Mounting: THT Number of channels: 1 Case: DIP8 Operating voltage: 7.5...24.5V DC Frequency: 67kHz On-state resistance: 11Ω Output voltage: 700V Output current: 0.8A Type of integrated circuit: PMIC Input voltage: 85...265V Duty cycle factor: 61...73% Kind of integrated circuit: PWM controller Topology: flyback Operating temperature: -40...125°C Power: 10W |
Produkt ist nicht verfügbar |
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SM15T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; SOT23 Mounting: SMD Semiconductor structure: common anode; double Max. forward impulse current: 10A Breakdown voltage: 16.7V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.3kW Case: SOT23 Max. off-state voltage: 15V |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP114AMX330TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Voltage drop: 0.2V Output voltage: 3.3V |
auf Bestellung 2687 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP114AMX330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Voltage drop: 0.2V Output voltage: 3.3V |
auf Bestellung 2645 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP114BSN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.135V Output voltage: 3.3V Output current: 0.225A Case: TSSOP5 Mounting: SMD Manufacturer series: NCP114 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.7...5.5V |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP114AMX100TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Output voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NCP114AMX300TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Voltage drop: 0.22V Output voltage: 3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP114BMX100TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1V Output current: 0.3A Case: uDFN4 Mounting: SMD Manufacturer series: NCP114 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP114AMX105TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Output voltage: 1.05V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP114AMX110TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Output voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP114AMX110TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Output voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP114AMX115TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Output voltage: 1.15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP114AMX135TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.35V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Output voltage: 1.35V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 74LCX373MTCX |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74LCX373DTG |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74LCX373DTR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP2N40-F080 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN327N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 742 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.50 EUR |
| 180+ | 0.40 EUR |
| 220+ | 0.33 EUR |
| 275+ | 0.26 EUR |
| 360+ | 0.20 EUR |
| 397+ | 0.18 EUR |
| FDMS8023S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 57nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 57nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCN5150DG |
|
Hersteller: ONSEMI
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface
Type of integrated circuit: interface
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 2.00 EUR |
| NSR20F30NXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 28A
Kind of package: reel; tape
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 28A
Kind of package: reel; tape
Max. load current: 4A
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 138+ | 0.52 EUR |
| 212+ | 0.34 EUR |
| 225+ | 0.32 EUR |
| 500+ | 0.31 EUR |
| NSR0620P2T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Mounting: SMD
Case: SOD923
Kind of package: reel; tape
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Mounting: SMD
Case: SOD923
Kind of package: reel; tape
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
auf Bestellung 4916 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 428+ | 0.17 EUR |
| 642+ | 0.11 EUR |
| 758+ | 0.09 EUR |
| NSR0230M2T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case: SOD723
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case: SOD723
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 376+ | 0.19 EUR |
| 560+ | 0.13 EUR |
| 642+ | 0.11 EUR |
| 1306+ | 0.06 EUR |
| 1382+ | 0.05 EUR |
| 8000+ | 0.05 EUR |
| FDB8447L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 60W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 60W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMD8280 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT574DWG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Operating temperature: -40...85°C
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Trigger: positive-edge-triggered
Manufacturer series: ACT
Kind of integrated circuit: D flip-flop
Mounting: SMD
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Operating temperature: -40...85°C
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Trigger: positive-edge-triggered
Manufacturer series: ACT
Kind of integrated circuit: D flip-flop
Mounting: SMD
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| SMF05CT2G |
|
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| FDB12N50TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Technology: DMOS; UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 46A
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Technology: DMOS; UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 46A
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR1540G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 30A
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 30A
Reverse recovery time: 60ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| BZX79C8V2 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.7µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.7µA
auf Bestellung 1887 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 658+ | 0.11 EUR |
| 814+ | 0.09 EUR |
| 1367+ | 0.05 EUR |
| 1731+ | 0.04 EUR |
| 1846+ | 0.04 EUR |
| MOC3072TVM |
|
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.96 EUR |
| MBRS360BT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.63V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.63V
auf Bestellung 2501 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 171+ | 0.42 EUR |
| 209+ | 0.34 EUR |
| 285+ | 0.25 EUR |
| 302+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| SZNUP2105LT3G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.18 EUR |
| KSP42TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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| KSP42BU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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| FSQ500L |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700V; 130kHz; Ch: 1; 41Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Case: SOT223
On-state resistance: 41Ω
Topology: flyback
Frequency: 130kHz
Output voltage: 700V
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 54...66%
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700V; 130kHz; Ch: 1; 41Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Case: SOT223
On-state resistance: 41Ω
Topology: flyback
Frequency: 130kHz
Output voltage: 700V
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 54...66%
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| MUN5114DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 130+ | 0.54 EUR |
| SMF15CT1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS array; 100W; 17÷19V; 5A; common anode; SC88; reel,tape
Type of diode: TVS array
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 15V
Breakdown voltage: 17...19V
Max. forward impulse current: 5A
Semiconductor structure: common anode
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 5
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS array; 100W; 17÷19V; 5A; common anode; SC88; reel,tape
Type of diode: TVS array
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 15V
Breakdown voltage: 17...19V
Max. forward impulse current: 5A
Semiconductor structure: common anode
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 5
Version: ESD
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| SZMM5Z4678T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD523F; single diode
Manufacturer series: MM5Z4xxxT1G
Semiconductor structure: single diode
Zener voltage: 1.8V
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD523F
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD523F; single diode
Manufacturer series: MM5Z4xxxT1G
Semiconductor structure: single diode
Zener voltage: 1.8V
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD523F
Tolerance: ±5%
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| 74LCX245MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
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| SZMMSZ5225BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MC74VHCT50ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
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| MC74HC1G00DBVT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.05 EUR |
| 4N37SR2VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.29 EUR |
| FDMS10C4D2N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56
Mounting: SMD
Drain-source voltage: 100V
Drain current: 48A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 510A
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56
Mounting: SMD
Drain-source voltage: 100V
Drain current: 48A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 510A
Case: Power56
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| MJD32CT4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
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| FDP075N15A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| FDME1034CZT |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.8/-2.6A; 1.4W; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.8/-2.6A
Power dissipation: 1.4W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 530/160mΩ
Mounting: SMD
Gate charge: 7.7/4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.8/-2.6A; 1.4W; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.8/-2.6A
Power dissipation: 1.4W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 530/160mΩ
Mounting: SMD
Gate charge: 7.7/4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FQD4P25TM-WS |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.96A; 45W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.96A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.96A; 45W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.96A
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| FQD4P40TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.71A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.71A
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| SFP9530 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Power dissipation: 66W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: -7.5A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Power dissipation: 66W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: -7.5A
Produkt ist nicht verfügbar
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| FQT3P20TF |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.53A; 2.5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -530mA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.53A; 2.5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -530mA
Produkt ist nicht verfügbar
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| FQB8P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Drain current: -5.7A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Drain current: -5.7A
Produkt ist nicht verfügbar
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| FQP15P12 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Drain current: -10.6A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Drain current: -10.6A
Produkt ist nicht verfügbar
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| FQD3P50TM-AM002BLT |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 23nC
Drain current: -1.33A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 23nC
Drain current: -1.33A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FQD5P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.28A; Idm: -14.4A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -14.4A
Power dissipation: 25W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.2nC
Drain current: -2.28A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.28A; Idm: -14.4A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -14.4A
Power dissipation: 25W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.2nC
Drain current: -2.28A
Produkt ist nicht verfügbar
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| FQU5P20TU |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; Idm: -14.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -14.8A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Drain current: -2.34A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; Idm: -14.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -14.8A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Drain current: -2.34A
Produkt ist nicht verfügbar
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| FQT2P25TF |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.35A; Idm: -2.2A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -2.2A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Drain current: -0.35A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.35A; Idm: -2.2A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -2.2A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Drain current: -0.35A
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| FQD12P10TM-F085 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -37.6A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 27nC
Application: automotive industry
Drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -37.6A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 27nC
Application: automotive industry
Drain current: -6A
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| FQD3P50TM-F085 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 23nC
Application: automotive industry
Drain current: -1.33A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 23nC
Application: automotive industry
Drain current: -1.33A
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| FSL117MRIN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Mounting: THT
Number of channels: 1
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 11Ω
Output voltage: 700V
Output current: 0.8A
Type of integrated circuit: PMIC
Input voltage: 85...265V
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Operating temperature: -40...125°C
Power: 10W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Mounting: THT
Number of channels: 1
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 11Ω
Output voltage: 700V
Output current: 0.8A
Type of integrated circuit: PMIC
Input voltage: 85...265V
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Operating temperature: -40...125°C
Power: 10W
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| SM15T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; SOT23
Mounting: SMD
Semiconductor structure: common anode; double
Max. forward impulse current: 10A
Breakdown voltage: 16.7V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Case: SOT23
Max. off-state voltage: 15V
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; SOT23
Mounting: SMD
Semiconductor structure: common anode; double
Max. forward impulse current: 10A
Breakdown voltage: 16.7V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Case: SOT23
Max. off-state voltage: 15V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.80 EUR |
| NCP114AMX330TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Voltage drop: 0.2V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Voltage drop: 0.2V
Output voltage: 3.3V
auf Bestellung 2687 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.50 EUR |
| 226+ | 0.32 EUR |
| 281+ | 0.26 EUR |
| 389+ | 0.18 EUR |
| 861+ | 0.08 EUR |
| 911+ | 0.08 EUR |
| NCP114AMX330TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Voltage drop: 0.2V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Voltage drop: 0.2V
Output voltage: 3.3V
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 323+ | 0.22 EUR |
| 388+ | 0.18 EUR |
| 447+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| 667+ | 0.11 EUR |
| 705+ | 0.10 EUR |
| 1000+ | 0.10 EUR |
| NCP114BSN330T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.135V
Output voltage: 3.3V
Output current: 0.225A
Case: TSSOP5
Mounting: SMD
Manufacturer series: NCP114
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.135V
Output voltage: 3.3V
Output current: 0.225A
Case: TSSOP5
Mounting: SMD
Manufacturer series: NCP114
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 243+ | 0.29 EUR |
| 307+ | 0.23 EUR |
| 506+ | 0.14 EUR |
| 618+ | 0.12 EUR |
| 736+ | 0.10 EUR |
| 782+ | 0.09 EUR |
| NCP114AMX100TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1V
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| NCP114AMX300TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Voltage drop: 0.22V
Output voltage: 3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Voltage drop: 0.22V
Output voltage: 3V
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| NCP114BMX100TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1V
Output current: 0.3A
Case: uDFN4
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1V
Output current: 0.3A
Case: uDFN4
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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| NCP114AMX105TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.05V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.05V
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| NCP114AMX110TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.1V
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| NCP114AMX110TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.1V
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| NCP114AMX115TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.15V
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| NCP114AMX135TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.35V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.35V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.35V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.35V
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