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FCP260N60E

FCP260N60E Fairchild Semiconductor

FAIR-S-A0002365478-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
192+2.42 EUR
Mindestbestellmenge: 192
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCP260N60E Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.

Weitere Produktangebote FCP260N60E nach Preis ab 2.38 EUR bis 6.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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FCP260N60E FCP260N60E Hersteller : onsemi / Fairchild FCPF260N60E_D-1806768.pdf MOSFETs PWM Controller mWSaver
auf Bestellung 3618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.47 EUR
10+4.08 EUR
25+3.29 EUR
100+2.99 EUR
500+2.94 EUR
800+2.52 EUR
2400+2.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP260N60E FCP260N60E Hersteller : onsemi FCPF260N60E-D.PDF Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
50+3.2 EUR
100+2.9 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCP260N60E FCP260N60E Hersteller : ON Semiconductor fcpf260n60e.pdf Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
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FCP260N60E Hersteller : ONSEMI FCPF260N60E-D.PDF FAIR-S-A0002365478-1.pdf?t.download=true&u=5oefqw FCP260N60E THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH