| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MMBZ15VDLT1G | ONSEMI |
 Category: Protection diodes - arraysDescription: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12.8V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 0.1µA |
auf Bestellung 1709 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMBZ15VDLT3G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12.8V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SZMMBZ15VDLT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Number of channels: 2 Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BF720T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
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SBF720T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDB0190N807L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Mounting: SMD Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK-6 On-state resistance: 4.3mΩ Pulsed drain current: 1.44kA Power dissipation: 250W Gate charge: 249nC Polarisation: unipolar Drain current: 190A Kind of channel: enhancement |
auf Bestellung 778 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTHL099N60S5 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 184W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FCMT199N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 208W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Gate charge: 57nC Kind of channel: enhancement Pulsed drain current: 60.6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FCMT299N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MMBFJ177 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 1.5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V On-state resistance: 300Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDB0165N807L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7 Mounting: SMD Pulsed drain current: 1780A Power dissipation: 300W Gate charge: 217nC Polarisation: unipolar Drain current: 310A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK-7 On-state resistance: 1.6mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MMBF4416 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 1229 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF4416A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -35V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 1301 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV8413DTRKG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; Ch: 1; N-Channel; SMD; DPAK; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: low-side Number of channels: 1 Mounting: SMD Case: DPAK On-state resistance: 37mΩ Application: automotive industry Kind of package: reel; tape Supply voltage: 42V Active logical level: low Kind of output: N-Channel Operating temperature: -40...150°C Integrated circuit features: thermal protection |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FQD6N50CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Pulsed drain current: 18A Power dissipation: 61W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP5501DT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; ±4.9% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 6...16V Kind of package: reel; tape |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5501DT33RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 4.3...16V Kind of package: reel; tape |
auf Bestellung 2758 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NVMFS6H800NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 224A Power dissipation: 107W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 900A Gate charge: 112nC |
auf Bestellung 1266 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C638NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A Power dissipation: 50W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 40.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1496 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NVMFS5C426NAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 235A Pulsed drain current: 900A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 65nC |
auf Bestellung 1474 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS5C426NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 235A Pulsed drain current: 900A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 65nC |
auf Bestellung 1417 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NRVB5100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 0.1kV Load current: 5A Max. load current: 10A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.98V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVTS1545EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 210A Max. forward voltage: 0.6V Application: automotive industry Max. off-state voltage: 45V Load current: 15A Max. load current: 30A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB10100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape Mounting: SMD Max. load current: 20A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVTS30100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Max. load current: 60A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 350A Max. forward voltage: 0.76V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB440MFSWFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB10100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape Mounting: SMD Max. load current: 20A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB1045MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.75V Application: automotive industry Max. off-state voltage: 45V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB1045MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.75V Application: automotive industry Max. off-state voltage: 45V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB2045EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 0.4kA Max. forward voltage: 0.64V Application: automotive industry Max. off-state voltage: 45V Load current: 20A Max. load current: 40A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB2045EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 0.4kA Max. forward voltage: 0.64V Application: automotive industry Max. off-state voltage: 45V Load current: 20A Max. load current: 40A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB30H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Max. load current: 60A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 0.3kA Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Max. load current: 60A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 0.3kA Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB440MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NRVB440MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB460MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.74V Application: automotive industry Max. off-state voltage: 60V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB860MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.8V Application: automotive industry Max. off-state voltage: 60V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB860MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.8V Application: automotive industry Max. off-state voltage: 60V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB8H100MFSWFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Max. load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVB8H100MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Max. load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVTS1045EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVTS1045EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NRVTS12100EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 12A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Max. forward voltage: 0.73V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 12A Max. load current: 24A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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2N3773G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 200kHz |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC33078DG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 16MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 5...18V DC; 10...36V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 7V/μs Input offset voltage: 3mV Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2SC5226A-4-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.15W Case: SC70 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1N4148 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: bulk Case: DO35 Capacitance: 4pF Power dissipation: 0.5W |
auf Bestellung 1749 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MJF15031G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 36W Case: TO220FP Mounting: THT Kind of package: tube Frequency: 30MHz Current gain: 40 |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
NTA4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD Power dissipation: 0.3W Polarisation: unipolar Version: ESD Drain current: 0.238A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SC75 On-state resistance: 3.5Ω Mounting: SMD |
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| NVS4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 270mA; Idm: 0.8A; 330mW; SC70 Case: SC70 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.33W Gate charge: 0.9nC Polarisation: unipolar Drain current: 0.27A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 1.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
MBRA210LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 10V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.26V Max. forward impulse current: 160A Kind of package: reel; tape |
auf Bestellung 3352 Stücke: Lieferzeit 14-21 Tag (e) |
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| CAT24S128C4UTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz Clock frequency: 1MHz Memory: 128kb EEPROM Kind of interface: serial Memory organisation: 16kx8bit Kind of package: reel; tape Case: WLCSP4 Interface: I2C Operating voltage: 1.7...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 400ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
H11F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7kV Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 25µs Turn-off time: 25µs Manufacturer series: H11FXM |
auf Bestellung 1159 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
H11F3M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: FET transistor Insulation voltage: 7.5kV Collector-emitter voltage: 15V Case: DIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
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| H11F1TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6 Manufacturer series: H11FXM Collector-emitter voltage: 30V Kind of output: FET transistor Insulation voltage: 4.17kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Turn-on time: 45µs Case: PDIP6 Turn-off time: 45µs Number of channels: 1 Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| EGP20J | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns Case: DO15 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 75A Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| EGP20C | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 75A Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| EGP20D | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 75A Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| GBPC3508 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
Produkt ist nicht verfügbar |
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| GBPC3508W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MMBZ15VDLT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
auf Bestellung 1709 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ15VDLT3G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| SZMMBZ15VDLT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BF720T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
| SBF720T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| FDB0190N807L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-6
On-state resistance: 4.3mΩ
Pulsed drain current: 1.44kA
Power dissipation: 250W
Gate charge: 249nC
Polarisation: unipolar
Drain current: 190A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-6
On-state resistance: 4.3mΩ
Pulsed drain current: 1.44kA
Power dissipation: 250W
Gate charge: 249nC
Polarisation: unipolar
Drain current: 190A
Kind of channel: enhancement
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
| NTHL099N60S5 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCMT199N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
Pulsed drain current: 60.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
Pulsed drain current: 60.6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FCMT299N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| MMBFJ177 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| FDB0165N807L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7
Mounting: SMD
Pulsed drain current: 1780A
Power dissipation: 300W
Gate charge: 217nC
Polarisation: unipolar
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 1.6mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7
Mounting: SMD
Pulsed drain current: 1780A
Power dissipation: 300W
Gate charge: 217nC
Polarisation: unipolar
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 1.6mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MMBF4416 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1229 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBF4416A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1301 Stücke:
Lieferzeit 14-21 Tag (e)
| NCV8413DTRKG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 1; N-Channel; SMD; DPAK; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Mounting: SMD
Case: DPAK
On-state resistance: 37mΩ
Application: automotive industry
Kind of package: reel; tape
Supply voltage: 42V
Active logical level: low
Kind of output: N-Channel
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 1; N-Channel; SMD; DPAK; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Mounting: SMD
Case: DPAK
On-state resistance: 37mΩ
Application: automotive industry
Kind of package: reel; tape
Supply voltage: 42V
Active logical level: low
Kind of output: N-Channel
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| FQD6N50CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Pulsed drain current: 18A
Power dissipation: 61W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Pulsed drain current: 18A
Power dissipation: 61W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP5501DT50RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; ±4.9%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 6...16V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; ±4.9%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 6...16V
Kind of package: reel; tape
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
| NCP5501DT33RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Kind of package: reel; tape
auf Bestellung 2758 Stücke:
Lieferzeit 14-21 Tag (e)
| NVMFS6H800NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 112nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 112nC
auf Bestellung 1266 Stücke:
Lieferzeit 14-21 Tag (e)
| NVMFS5C638NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1496 Stücke:
Lieferzeit 14-21 Tag (e)
| NVMFS5C426NAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 65nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 65nC
auf Bestellung 1474 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMFS5C426NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 65nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 65nC
auf Bestellung 1417 Stücke:
Lieferzeit 14-21 Tag (e)
| NRVB5100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 5A
Max. load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.98V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 5A
Max. load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.98V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS1545EMFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 210A
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 210A
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB10100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS30100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Max. forward voltage: 0.76V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Max. forward voltage: 0.76V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB440MFSWFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB10100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB1045MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB1045MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB2045EMFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB2045EMFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB30H100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB30H100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB440MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NRVB440MFSWFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB460MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.74V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.74V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB860MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB860MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB8H100MFSWFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB8H100MFSWFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS1045EMFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS1045EMFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS12100EMFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Max. forward voltage: 0.73V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 12A
Max. load current: 24A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Max. forward voltage: 0.73V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 12A
Max. load current: 24A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| 2N3773G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33078DG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 3mV
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 3mV
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| 2SC5226A-4-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
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| 1N4148 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: bulk
Case: DO35
Capacitance: 4pF
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: bulk
Case: DO35
Capacitance: 4pF
Power dissipation: 0.5W
auf Bestellung 1749 Stücke:
Lieferzeit 14-21 Tag (e)
| MJF15031G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Current gain: 40
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Current gain: 40
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| NTA4001NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3.5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3.5Ω
Mounting: SMD
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| NVS4001NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 270mA; Idm: 0.8A; 330mW; SC70
Case: SC70
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.33W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.27A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 270mA; Idm: 0.8A; 330mW; SC70
Case: SC70
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.33W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.27A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
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| MBRA210LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 10V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.26V
Max. forward impulse current: 160A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 10V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.26V
Max. forward impulse current: 160A
Kind of package: reel; tape
auf Bestellung 3352 Stücke:
Lieferzeit 14-21 Tag (e)
| CAT24S128C4UTR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz
Clock frequency: 1MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
Kind of package: reel; tape
Case: WLCSP4
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 400ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz
Clock frequency: 1MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
Kind of package: reel; tape
Case: WLCSP4
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 400ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| H11F1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 25µs
Turn-off time: 25µs
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 25µs
Turn-off time: 25µs
Manufacturer series: H11FXM
auf Bestellung 1159 Stücke:
Lieferzeit 14-21 Tag (e)
| H11F3M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
| H11F1TVM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Manufacturer series: H11FXM
Collector-emitter voltage: 30V
Kind of output: FET transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 45µs
Case: PDIP6
Turn-off time: 45µs
Number of channels: 1
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Manufacturer series: H11FXM
Collector-emitter voltage: 30V
Kind of output: FET transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 45µs
Case: PDIP6
Turn-off time: 45µs
Number of channels: 1
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| EGP20J |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 75ns
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| EGP20C |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
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| EGP20D |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
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| GBPC3508 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| GBPC3508W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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