| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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NRVRGF1D | ONSEMI |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 200V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NRVRGF1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 250ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Application: automotive industry Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NRVRGF1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 0.5µs Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Application: automotive industry Max. off-state voltage: 1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.27µC |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH47N60F-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA47N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FCI7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FCA47N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FCA47N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO3P Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NL27WZ86USG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| CPH6001A-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6 Mounting: SMD Case: CPH6 Kind of package: reel; tape Collector-emitter voltage: 12V Power dissipation: 0.8W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Collector current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| CPH6003A-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6 Mounting: SMD Case: CPH6 Kind of package: reel; tape Collector-emitter voltage: 12V Power dissipation: 0.8W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Frequency: 7GHz Collector current: 0.15A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BZX79C2V7-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MBR8170TFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. forward voltage: 0.89V Max. forward impulse current: 140A Leakage current: 30µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NRVTS360ETFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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H11AV1AM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Mounting: THT Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 15µs Case: DIP6 Turn-off time: 15µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 100-300%@10mA Kind of output: transistor |
auf Bestellung 1667 Stücke: Lieferzeit 14-21 Tag (e) |
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FDH300ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
auf Bestellung 6310 Stücke: Lieferzeit 14-21 Tag (e) |
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FDH300A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk |
auf Bestellung 3030 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDH300TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDH333 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Case: DO35 Kind of package: bulk Max. forward voltage: 1.15V Power dissipation: 0.5W Max. load current: 0.6A Leakage current: 0.5µA Capacitance: 6pF |
auf Bestellung 894 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDH333TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NTR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 10A Power dissipation: 1.25W Gate charge: 6nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: SOT23 On-state resistance: 0.105Ω |
auf Bestellung 14369 Stücke: Lieferzeit 14-21 Tag (e) |
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NVR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 10A Power dissipation: 1.25W Gate charge: 6nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhancement Drain-source voltage: 20V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: SOT23 On-state resistance: 0.105Ω |
auf Bestellung 541 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ4708T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ4xxTxG Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TIP110 | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMSZ4684T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape Tolerance: ±5% Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 3.3V Type of diode: Zener |
auf Bestellung 4297 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G00DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF76423P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB Mounting: THT Power dissipation: 85W Gate charge: 34nC Polarisation: unipolar Technology: UltraFET® Drain current: 23A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: tube Case: TO220AB On-state resistance: 35mΩ |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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2V7002LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS7002A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 8440 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
auf Bestellung 694 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF600N65S3R0L-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 650V; 6A; 24W; TO220 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 6A Power dissipation: 24W Case: TO220 Gate-source voltage: 30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 11nC Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCPF600N60ZL1-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.4A Pulsed drain current: 22.2A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTPF600N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 21A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDC6321C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 720/1220mΩ Mounting: SMD Power dissipation: 0.9W Gate charge: 2.3/1.5nC Polarisation: unipolar Technology: PowerTrench® Drain current: 0.68/-0.46A Kind of channel: enhancement Drain-source voltage: 25/-25V Kind of transistor: complementary pair |
auf Bestellung 908 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6303N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 0.8Ω Mounting: SMD Power dissipation: 0.9W Gate charge: 2.3nC Polarisation: unipolar Technology: PowerTrench® Drain current: 0.68A Kind of channel: enhancement Drain-source voltage: 25V |
auf Bestellung 1620 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC638APZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 72mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 12nC Polarisation: unipolar Technology: PowerTrench® Drain current: -4.5A Kind of channel: enhancement Drain-source voltage: -20V |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC604P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 60mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 30nC Polarisation: unipolar Technology: PowerTrench® Drain current: -5.5A Kind of channel: enhancement Drain-source voltage: -20V |
auf Bestellung 958 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC608PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 43mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 23nC Polarisation: unipolar Technology: PowerTrench® Drain current: -5.8A Kind of channel: enhancement Drain-source voltage: -20V |
auf Bestellung 2082 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC658P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 80mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 12nC Polarisation: unipolar Technology: PowerTrench® Drain current: -4A Kind of channel: enhancement Drain-source voltage: -30V |
auf Bestellung 2349 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC653N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 56mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 16nC Polarisation: unipolar Technology: PowerTrench® Drain current: 5A Kind of channel: enhancement Drain-source voltage: 30V |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC606P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 53mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 25nC Polarisation: unipolar Technology: PowerTrench® Drain current: -6A Kind of channel: enhancement Drain-source voltage: -12V |
auf Bestellung 2055 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC645N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 48mΩ Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Drain current: 5.5A Kind of channel: enhancement Drain-source voltage: 30V |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC638P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 72mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 14nC Polarisation: unipolar Technology: PowerTrench® Drain current: -4.5A Kind of channel: enhancement Drain-source voltage: -20V |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC610PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 75mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 13nC Polarisation: unipolar Technology: PowerTrench® Drain current: -4.9A Kind of channel: enhancement Drain-source voltage: -30V |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC602P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 53mΩ Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Drain current: -5.5A Kind of channel: enhancement Drain-source voltage: -20V |
auf Bestellung 2997 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC637AN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 41mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 16nC Polarisation: unipolar Technology: PowerTrench® Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 20V |
auf Bestellung 2256 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC637BNZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 41mΩ Mounting: SMD Power dissipation: 1.6W Gate charge: 12nC Polarisation: unipolar Technology: PowerTrench® Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 20V |
auf Bestellung 1370 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 4A Reverse recovery time: 50ns Semiconductor structure: double independent Case: DFN8 Max. forward voltage: 1.05V Max. load current: 8A Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 4A Reverse recovery time: 50ns Semiconductor structure: double independent Case: DFN8 Max. forward voltage: 1.05V Max. load current: 8A Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FFSD08120A | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 22.5A Semiconductor structure: single diode Max. forward voltage: 1.75V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCB099N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 227W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 61nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCB199N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Power dissipation: 98W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.199Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 30nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCH099N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 227W Case: TO247 Gate-source voltage: ±30V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 61nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVB099N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 227W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 61nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCPF099N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 57nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FCMT099N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 227W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 75A Gate charge: 56nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMFS6H848NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Pulsed drain current: 319A Power dissipation: 37W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZX84B12LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; single diode; reel,tape; BZX84B Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Case: SOT23 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84B |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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| NRVRGF1D |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVRGF1J |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NRVRGF1M |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH47N60-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 16.02 EUR |
| 7+ | 13.46 EUR |
| FCH47N60F-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 15.71 EUR |
| 10+ | 13.9 EUR |
| FCA47N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.81 EUR |
| 10+ | 15.28 EUR |
| FCP7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCI7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCA47N60-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCA47N60F |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NL27WZ86USG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPH6001A-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Collector current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPH6003A-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Frequency: 7GHz
Collector current: 0.15A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Frequency: 7GHz
Collector current: 0.15A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79C2V7-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR8170TFSTAG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS360ETFSTAG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| H11AV1AM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 153+ | 0.56 EUR |
| 187+ | 0.45 EUR |
| FDH300ATR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
auf Bestellung 6310 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 725+ | 0.12 EUR |
| 1092+ | 0.077 EUR |
| 1437+ | 0.06 EUR |
| 1619+ | 0.052 EUR |
| 2000+ | 0.048 EUR |
| 2500+ | 0.045 EUR |
| 5000+ | 0.042 EUR |
| FDH300A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
auf Bestellung 3030 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 807+ | 0.11 EUR |
| 926+ | 0.092 EUR |
| 1226+ | 0.069 EUR |
| 1520+ | 0.056 EUR |
| 1678+ | 0.051 EUR |
| 2000+ | 0.048 EUR |
| FDH300TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDH333 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1.15V
Power dissipation: 0.5W
Max. load current: 0.6A
Leakage current: 0.5µA
Capacitance: 6pF
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1.15V
Power dissipation: 0.5W
Max. load current: 0.6A
Leakage current: 0.5µA
Capacitance: 6pF
auf Bestellung 894 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.17 EUR |
| 658+ | 0.13 EUR |
| 894+ | 0.095 EUR |
| FDH333TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTR4501NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.105Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.105Ω
auf Bestellung 14369 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 266+ | 0.32 EUR |
| 305+ | 0.27 EUR |
| 417+ | 0.2 EUR |
| 472+ | 0.18 EUR |
| 610+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 1500+ | 0.12 EUR |
| 3000+ | 0.11 EUR |
| NVR4501NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.105Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.105Ω
auf Bestellung 541 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 99+ | 0.87 EUR |
| 159+ | 0.54 EUR |
| 244+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| SZMMSZ4708T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP110 |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ4684T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3.3V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3.3V
Type of diode: Zener
auf Bestellung 4297 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 658+ | 0.13 EUR |
| 834+ | 0.1 EUR |
| 1009+ | 0.084 EUR |
| 1211+ | 0.07 EUR |
| 1516+ | 0.056 EUR |
| 1774+ | 0.048 EUR |
| 2033+ | 0.042 EUR |
| 3000+ | 0.038 EUR |
| MC74VHC1G00DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 1.46 EUR |
| HUF76423P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB
Mounting: THT
Power dissipation: 85W
Gate charge: 34nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: tube
Case: TO220AB
On-state resistance: 35mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB
Mounting: THT
Power dissipation: 85W
Gate charge: 34nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: tube
Case: TO220AB
On-state resistance: 35mΩ
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.81 EUR |
| 50+ | 1.7 EUR |
| 62+ | 1.38 EUR |
| 100+ | 1.23 EUR |
| 2V7002LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 218+ | 0.39 EUR |
| 285+ | 0.3 EUR |
| 325+ | 0.26 EUR |
| 459+ | 0.19 EUR |
| 538+ | 0.15 EUR |
| 783+ | 0.11 EUR |
| 1000+ | 0.092 EUR |
| 1500+ | 0.083 EUR |
| NDS7002A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 388+ | 0.21 EUR |
| 534+ | 0.15 EUR |
| 606+ | 0.14 EUR |
| 784+ | 0.11 EUR |
| 1000+ | 0.095 EUR |
| 3000+ | 0.079 EUR |
| 6000+ | 0.07 EUR |
| 2N7000 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
auf Bestellung 694 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 0.73 EUR |
| 140+ | 0.61 EUR |
| 159+ | 0.54 EUR |
| 266+ | 0.32 EUR |
| 309+ | 0.27 EUR |
| 500+ | 0.23 EUR |
| FCPF600N65S3R0L-F154 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 24W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 24W
Case: TO220
Gate-source voltage: 30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of channel: enhancement
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 24W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 24W
Case: TO220
Gate-source voltage: 30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCPF600N60ZL1-F154 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF600N80S3Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDC6321C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 720/1220mΩ
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 2.3/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.68/-0.46A
Kind of channel: enhancement
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 720/1220mΩ
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 2.3/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.68/-0.46A
Kind of channel: enhancement
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.86 EUR |
| 113+ | 0.75 EUR |
| 127+ | 0.67 EUR |
| 144+ | 0.6 EUR |
| 164+ | 0.52 EUR |
| 500+ | 0.39 EUR |
| FDC6303N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 2.3nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.68A
Kind of channel: enhancement
Drain-source voltage: 25V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 2.3nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.68A
Kind of channel: enhancement
Drain-source voltage: 25V
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 120+ | 0.71 EUR |
| 160+ | 0.54 EUR |
| 209+ | 0.4 EUR |
| 232+ | 0.37 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| FDC638APZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 72mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 72mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4.5A
Kind of channel: enhancement
Drain-source voltage: -20V
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 1.15 EUR |
| 102+ | 0.83 EUR |
| FDC604P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 60mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 30nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 60mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 30nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.5A
Kind of channel: enhancement
Drain-source voltage: -20V
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 1.15 EUR |
| 125+ | 0.68 EUR |
| 178+ | 0.48 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.36 EUR |
| FDC608PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 43mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 23nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 43mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 23nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -20V
auf Bestellung 2082 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 136+ | 0.63 EUR |
| 154+ | 0.56 EUR |
| 205+ | 0.42 EUR |
| 229+ | 0.37 EUR |
| 258+ | 0.33 EUR |
| 500+ | 0.32 EUR |
| FDC658P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 80mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4A
Kind of channel: enhancement
Drain-source voltage: -30V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 80mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4A
Kind of channel: enhancement
Drain-source voltage: -30V
auf Bestellung 2349 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 72+ | 1.19 EUR |
| 82+ | 1.05 EUR |
| 111+ | 0.77 EUR |
| 126+ | 0.68 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.5 EUR |
| FDC653N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 56mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 16nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 56mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 16nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 30V
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 81+ | 1.06 EUR |
| 91+ | 0.94 EUR |
| 106+ | 0.81 EUR |
| 119+ | 0.71 EUR |
| 133+ | 0.64 EUR |
| FDC606P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 53mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 25nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 53mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 25nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -12V
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 1.46 EUR |
| 74+ | 1.15 EUR |
| 85+ | 1.01 EUR |
| 118+ | 0.73 EUR |
| 129+ | 0.67 EUR |
| FDC645N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 48mΩ
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 5.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 48mΩ
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 5.5A
Kind of channel: enhancement
Drain-source voltage: 30V
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 1.98 EUR |
| FDC638P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 72mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 72mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4.5A
Kind of channel: enhancement
Drain-source voltage: -20V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 2.93 EUR |
| FDC610PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 75mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 13nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 75mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 13nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -30V
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 142+ | 0.6 EUR |
| 199+ | 0.43 EUR |
| FDC602P |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 53mΩ
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -5.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 53mΩ
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -5.5A
Kind of channel: enhancement
Drain-source voltage: -20V
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 84+ | 1.02 EUR |
| 96+ | 0.89 EUR |
| 135+ | 0.63 EUR |
| 158+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| FDC637AN |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 41mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 16nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 41mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 16nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 20V
auf Bestellung 2256 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 1.21 EUR |
| 108+ | 0.79 EUR |
| 159+ | 0.54 EUR |
| FDC637BNZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 41mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 41mΩ
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 20V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 0.8 EUR |
| 136+ | 0.63 EUR |
| 164+ | 0.52 EUR |
| 319+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| NRVHP820MFDT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVHP820MFDT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: DFN8
Max. forward voltage: 1.05V
Max. load current: 8A
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSD08120A |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22.5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22.5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCB099N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCB199N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 30nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 30nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCH099N65S3-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB099N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 61nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF099N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 57nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 57nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCMT099N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 56nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 75A
Gate charge: 56nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS6H848NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX84B12LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; single diode; reel,tape; BZX84B
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Case: SOT23
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84B
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; single diode; reel,tape; BZX84B
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Case: SOT23
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84B
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 283+ | 0.31 EUR |