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Hersteller: onsemi
Description: IC SERIALIZER/DESERIAL 56TSSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: LVTTL
Mounting Type: Surface Mount
Number of Outputs: 28
Function: Deserializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Data Rate: 2.38Gbps
Input Type: LVDS
Number of Inputs: 4
Supplier Device Package: 56-TSSOP

Hersteller: onsemi
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA

Hersteller: onsemi
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 100% @ 1mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 70V
Part Status: Active
Number of Channels: 1

Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 250V 69A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 34.5A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V

Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)

Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active

Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)

Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)

Hersteller: onsemi
Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 250V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 80A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5522 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 75V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 250V 33A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 250V 51A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 150V 79A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 39.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V

Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WLCSP (1x1.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V

Hersteller: onsemi
Description: IGBT 300V 90A 219W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Supplier Device Package: TO-3P
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 219 W

Hersteller: onsemi
Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V

Hersteller: onsemi
Description: IC VIDEO DRIVER 14TSSOP

Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 70 W

Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK I2PAK
Packaging: Tube
Package / Case: TO-262-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: I2-PAK-6 (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 70 W

Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK D2PAK-6
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: D2PAK-6
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 55 W

Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 27 W

Hersteller: onsemi
Description: IGBT 600V 70A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/73ns
Switching Energy: 105µJ (on), 150µJ (off)
Test Condition: 390V, 20A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 290 W

Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V

Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V

Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)

Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active

Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)

Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.9A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)

Hersteller: onsemi
Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V

Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WLCSP (1x1.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V

Hersteller: onsemi
Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V

Hersteller: onsemi
Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V

Hersteller: onsemi
Description: IC TEMP/VOLT DGL SENS SST 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Simple Serial Transport™ (SST)
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±1.75°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: -40°C ~ 125°C, External Sensor
Topology: ADC, Multiplexer, Register Bank
Output Alarm: No
Output Fan: No
Supplier Device Package: 10-MSOP

Hersteller: onsemi
Description: IC MOTOR DRVR 10.8V-13.2V 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Parallel
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10.8V ~ 13.2V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 28-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete

Hersteller: onsemi
Description: MOSFET P-CH 20V 3.2A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Supplier Device Package: 6-MicroFET (2x2)
Drain to Source Voltage (Vdss): 20 V

Hersteller: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA