Technische Details HGTP5N120BND FAIRCHIL..
Description: IGBT NPT 1200V 21A TO-220-3, Reverse Recovery Time (trr): 65 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power - Max: 167 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 21 A, Part Status: Obsolete, Gate Charge: 53 nC, Test Condition: 960V, 5A, 25Ohm, 15V, Switching Energy: 450µJ (on), 390µJ (off), Td (on/off) @ 25°C: 22ns/160ns, IGBT Type: NPT, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A.
Weitere Produktangebote HGTP5N120BND
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| HGTP5N120BND | ONS/FAI |
 Trans IGBT Chip N-CH 1200V 21A 167W 3-Pin(3+Tab) TO-220 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
HGTP5N120BND | onsemi |
Description: IGBT NPT 1200V 21A TO-220-3 Reverse Recovery Time (trr): 65 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power - Max: 167 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 21 A Part Status: Obsolete Gate Charge: 53 nC Test Condition: 960V, 5A, 25Ohm, 15V Switching Energy: 450µJ (on), 390µJ (off) Td (on/off) @ 25°C: 22ns/160ns IGBT Type: NPT Supplier Device Package: TO-220-3 Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
HGTP5N120BND | onsemi / Fairchild |
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HGTP5N120BND |
|
Hersteller: ONS/FAI
Trans IGBT Chip N-CH 1200V 21A 167W 3-Pin(3+Tab) TO-220 Транзистори
Trans IGBT Chip N-CH 1200V 21A 167W 3-Pin(3+Tab) TO-220 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HGTP5N120BND |
|
Hersteller: onsemi
Description: IGBT NPT 1200V 21A TO-220-3
Reverse Recovery Time (trr): 65 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 167 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Obsolete
Gate Charge: 53 nC
Test Condition: 960V, 5A, 25Ohm, 15V
Switching Energy: 450µJ (on), 390µJ (off)
Td (on/off) @ 25°C: 22ns/160ns
IGBT Type: NPT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Description: IGBT NPT 1200V 21A TO-220-3
Reverse Recovery Time (trr): 65 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 167 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Obsolete
Gate Charge: 53 nC
Test Condition: 960V, 5A, 25Ohm, 15V
Switching Energy: 450µJ (on), 390µJ (off)
Td (on/off) @ 25°C: 22ns/160ns
IGBT Type: NPT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HGTP5N120BND |
|
Hersteller: onsemi / Fairchild
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH