HGTP5N120BND ON Semiconductor

Description: IGBT NPT 1200V 21A TO-220-3, Reverse Recovery Time (trr): 65 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power - Max: 167 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 21 A, Part Status: Obsolete, Gate Charge: 53 nC, Test Condition: 960V, 5A, 25Ohm, 15V, Switching Energy: 450µJ (on), 390µJ (off), Td (on/off) @ 25°C: 22ns/160ns, IGBT Type: NPT, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A.