| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.52 EUR |
| 10+ | 3.8 EUR |
| 120+ | 3.28 EUR |
| 510+ | 3.06 EUR |
| 1020+ | 2.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HUF75639G3 onsemi / Fairchild
Description: MOSFET N-CH 100V 56A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Weitere Produktangebote HUF75639G3 nach Preis ab 2.82 EUR bis 8.04 EUR
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HUF75639G3 | onsemi |
 MOSFETs 56a 100V N-Ch UltraFET .25 Ohm |
auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639G3 | onsemi |
Description: MOSFET N-CH 100V 56A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 30895 Stücke: Lieferzeit 10-14 Tag (e) |
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| HUF75639G3 | ONN |
|
auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| HUF75639G3 |
|
Hersteller: onsemi
MOSFETs 56a 100V N-Ch UltraFET .25 Ohm
MOSFETs 56a 100V N-Ch UltraFET .25 Ohm
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.04 EUR |
| 10+ | 4.44 EUR |
| 120+ | 3.31 EUR |
| 510+ | 3.12 EUR |
| 1020+ | 2.93 EUR |
| HUF75639G3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 30895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.04 EUR |
| 30+ | 4.45 EUR |
| 120+ | 3.67 EUR |
| 510+ | 3.08 EUR |
| 1020+ | 2.87 EUR |
| 2010+ | 2.82 EUR |
| HUF75639G3 |
|
Hersteller: ONN
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)