| Anzahl | Preis |
|---|---|
| 1+ | 6.32 EUR |
| 10+ | 3.19 EUR |
| 120+ | 2.76 EUR |
| 510+ | 2.57 EUR |
| 1020+ | 2.46 EUR |
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Technische Details HUF75639G3 onsemi / Fairchild
Description: MOSFET N-CH 100V 56A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Weitere Produktangebote HUF75639G3 nach Preis ab 2.37 EUR bis 6.76 EUR
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HUF75639G3 | Hersteller : onsemi |
 MOSFETs 56a 100V N-Ch UltraFET .25 Ohm |
auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639G3 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 56A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 30895 Stücke: Lieferzeit 10-14 Tag (e) |
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| HUF75639G3 | Hersteller : ONN |
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auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |