| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.65V Kind of package: reel; tape Max. load current: 130A |
auf Bestellung 2377 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRS320T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MBRS330T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NJD35N04G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: tube Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MJD350T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: tube Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Frequency: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NJD35N04T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NJVNJD35N04T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Kind of transistor: Darlington Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NJVMJD350T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SS28 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 80V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH006P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 14.6mΩ Drain current: 191A Pulsed drain current: 382A Drain-source voltage: 1.2kV Power dissipation: 556W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH006P120MNF2PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -15...25V On-state resistance: 7.28mΩ Drain current: 304A Pulsed drain current: 912A Drain-source voltage: 1.2kV Power dissipation: 950W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74VHCT32ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14 Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOIC14 Operating temperature: -55...125°C Family: VHCT Kind of package: reel; tape Kind of integrated circuit: level shifter Supply voltage: 2...5.5V DC Manufacturer series: VHCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74VHCT32ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Quiescent current: 40µA Family: VHCT Kind of package: reel; tape Supply voltage: 2...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| S310FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.85V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SOD123F |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV317LBDR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8 Kind of package: reel; tape Application: automotive industry Manufacturer series: NCV317L Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 0.1A Number of channels: 1 Tolerance: ±1.5% Output voltage: 1.2...37V Input voltage: 1.2...40V Kind of voltage regulator: adjustable; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV317LBZG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Kind of package: bulk Application: automotive industry Case: TO92 Mounting: THT Type of integrated circuit: voltage regulator Output current: 20mA Number of channels: 1 Output voltage: 1.2...37V Kind of voltage regulator: adjustable; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV317LBZRAG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Kind of package: reel; tape Application: automotive industry Case: TO92 Mounting: THT Type of integrated circuit: voltage regulator Output current: 20mA Number of channels: 1 Output voltage: 1.2...37V Kind of voltage regulator: adjustable; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NV25M01DTUTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...105°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25M01VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25M01XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25M01YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV25M01VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz Operating voltage: 2.5...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...125°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV25M01YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...125°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MJ11028G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 50A Power dissipation: 300W Case: TO3 Mounting: THT Kind of package: in-tray |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| VESTL431BVDR2G | ONSEMI |
Category: Unclassified Description: VESTL431BVDR2G |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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LM358N | ONSEMI |
Category: THT operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC14046BDWG | ONSEMI |
Category: UnclassifiedDescription: MC14046BDWG |
auf Bestellung 2256 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV47710PDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8 Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry Kind of package: reel; tape Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.35A Number of channels: 1 Output voltage: 5...20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1SMB5937BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5928BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 9250 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5941BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1334 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 4203 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5933BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 22V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 376 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5926BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5946BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 75V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5943BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1398 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5949BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5920BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1426 Stücke: Lieferzeit 14-21 Tag (e) |
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NL17SZ74USG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: US8 Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered Manufacturer series: 7SZ |
auf Bestellung 2213 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HCT241ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBT4124LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MMBT4126LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 120...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BC846BLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74ACT161DR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74ACT163DR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; binary counter,synchronous reset; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: binary counter; synchronous reset Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033K3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 35A Pulsed drain current: 140A Power dissipation: 242W Case: TO247-3 Gate-source voltage: -25...25V On-state resistance: 75Ω Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UJ4C075033K4S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 35A Pulsed drain current: 140A Power dissipation: 242W Case: TO247-4 Gate-source voltage: -25...25V On-state resistance: 75Ω Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPZT2907AT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: tape Frequency: 200MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ISL9V5045S3ST-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level Version: ESD Kind of package: reel; tape Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: SMD Gate charge: 32nC Power dissipation: 300W Collector current: 43A Gate-emitter voltage: ±10V Collector-emitter voltage: 450V Application: ignition systems Case: D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ISL9V2040D3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD Version: ESD Kind of package: reel; tape Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: SMD Gate charge: 12nC Power dissipation: 130W Collector current: 10A Gate-emitter voltage: ±10V Collector-emitter voltage: 400V Application: ignition systems Case: DPAK |
Produkt ist nicht verfügbar |
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| ISL9V5036P3-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level Version: ESD Kind of package: tube Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: THT Gate charge: 32nC Power dissipation: 250W Collector current: 31A Gate-emitter voltage: ±10V Collector-emitter voltage: 360V Application: ignition systems Case: TO220-3 |
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| ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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| BAT54M3T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT723 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape |
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| NSVBAT54M3T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT723 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
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|
74ACT14SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Mounting: SMD Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Case: SO14 Type of integrated circuit: digital Number of channels: hex; 6 Kind of gate: NOT Kind of package: tube Family: ACT |
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|
74ACT14SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Mounting: SMD Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Case: SO14 Type of integrated circuit: digital Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Family: ACT Quiescent current: 40µA |
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|
74ACT14MTC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Case: TSSOP14 Type of integrated circuit: digital Number of channels: hex; 6 Kind of gate: NOT Kind of package: tube Family: ACT |
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|
BUX85G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 1kV Collector current: 2A Power dissipation: 40W Case: TO220AB Mounting: THT Frequency: 4MHz Kind of package: tube |
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Im Einkaufswagen Stück im Wert von UAH |
| MBRS2H100T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 210+ | 0.34 EUR |
| 240+ | 0.3 EUR |
| MBRS120T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 158+ | 0.46 EUR |
| MBRS320T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBRS330T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NJD35N04G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MJD350T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NJD35N04T4G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
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| NJVNJD35N04T4G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
Produkt ist nicht verfügbar
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| NJVMJD350T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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| SS28 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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| NXH006P120M3F2PTHG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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| NXH006P120MNF2PTG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
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| NTDV20N06T4G-VF01 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| MC74VHCT32ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
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| MC74VHCT32ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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| S310FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 204+ | 0.35 EUR |
| 233+ | 0.31 EUR |
| 249+ | 0.29 EUR |
| 252+ | 0.28 EUR |
| NCV317LBDR2G |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
Produkt ist nicht verfügbar
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| NCV317LBZG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCV317LBZRAG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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| NV25M01DTUTG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CAT25M01VI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25M01XI-T2 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25M01YI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV25M01VE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV25M01YE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ11028G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.62 EUR |
| VESTL431BVDR2G |
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.11 EUR |
| LM358N |
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Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14046BDWG |
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auf Bestellung 2256 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 141+ | 0.64 EUR |
| NCV47710PDAJR2G |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5937BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 317+ | 0.23 EUR |
| 365+ | 0.2 EUR |
| 424+ | 0.17 EUR |
| 527+ | 0.14 EUR |
| 603+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| 1SMB5928BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 9250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 256+ | 0.28 EUR |
| 296+ | 0.24 EUR |
| 432+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 569+ | 0.13 EUR |
| 1SMB5941BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1334 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 250+ | 0.29 EUR |
| 277+ | 0.26 EUR |
| 360+ | 0.2 EUR |
| 407+ | 0.18 EUR |
| 459+ | 0.16 EUR |
| 538+ | 0.13 EUR |
| 1SMB5932BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 4203 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 285+ | 0.25 EUR |
| 327+ | 0.22 EUR |
| 511+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 1SMB5933BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 298+ | 0.24 EUR |
| 338+ | 0.21 EUR |
| 376+ | 0.19 EUR |
| 1SMB5926BT3G | ![]() |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.66 EUR |
| 1SMB5946BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 210+ | 0.34 EUR |
| 295+ | 0.24 EUR |
| 330+ | 0.21 EUR |
| 1SMB5943BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1398 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 272+ | 0.26 EUR |
| 311+ | 0.23 EUR |
| 424+ | 0.17 EUR |
| 481+ | 0.15 EUR |
| 532+ | 0.13 EUR |
| 1SMB5949BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.1 EUR |
| 1SMB5920BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1426 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 385+ | 0.19 EUR |
| 459+ | 0.16 EUR |
| 642+ | 0.11 EUR |
| NL17SZ74USG |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
auf Bestellung 2213 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 338+ | 0.21 EUR |
| 382+ | 0.19 EUR |
| 447+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| MC74HCT241ADTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT4124LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT4126LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC846BLT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT161DR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT163DR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary counter,synchronous reset; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; synchronous reset
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; binary counter,synchronous reset; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; synchronous reset
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
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| UJ4C075033K3S |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| UJ4C075033K4S |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| SPZT2907AT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 200MHz
Application: automotive industry
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| ISL9V5045S3ST-F085 |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
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| ISL9V2040D3ST |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 12nC
Power dissipation: 130W
Collector current: 10A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 12nC
Power dissipation: 130W
Collector current: 10A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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| ISL9V5036P3-F085 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Version: ESD
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: THT
Gate charge: 32nC
Power dissipation: 250W
Collector current: 31A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 360V
Application: ignition systems
Case: TO220-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Version: ESD
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: THT
Gate charge: 32nC
Power dissipation: 250W
Collector current: 31A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 360V
Application: ignition systems
Case: TO220-3
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| ISL9V3040D3ST |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| BAT54M3T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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| NSVBAT54M3T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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| 74ACT14SC |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: SO14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: SO14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Family: ACT
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| 74ACT14SCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: SO14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Family: ACT
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: SO14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Family: ACT
Quiescent current: 40µA
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| 74ACT14MTC |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: TSSOP14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: TSSOP14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Family: ACT
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| BUX85G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
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