| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FGHL75T65MQDTL4 | ONSEMI |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 375W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 375W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC |
Produkt ist nicht verfügbar |
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| NVHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 157nC On-state resistance: 40mΩ Drain current: 65A Gate-source voltage: ±30V Power dissipation: 446W Pulsed drain current: 162.5A Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| NVHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 153nC On-state resistance: 40mΩ Drain current: 65A Gate-source voltage: ±30V Power dissipation: 446W Pulsed drain current: 162.5A Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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UJ3C065080K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A Technology: SiC Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 51nC On-state resistance: 80mΩ Drain current: 23A Gate-source voltage: ±25V Power dissipation: 190W Pulsed drain current: 65A Drain-source voltage: 650V Kind of channel: enhancement Version: ESD Type of transistor: N-JFET / N-MOSFET Kind of transistor: cascode Polarisation: unipolar |
Produkt ist nicht verfügbar |
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UJ3C065080T3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A Technology: SiC Mounting: THT Case: TO220-3 Kind of package: tube Gate charge: 51nC On-state resistance: 80mΩ Drain current: 23A Gate-source voltage: ±25V Power dissipation: 190W Pulsed drain current: 65A Drain-source voltage: 650V Kind of channel: enhancement Version: ESD Type of transistor: N-JFET / N-MOSFET Kind of transistor: cascode Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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LM385BZ-2.5G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Tolerance: ±1.5% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: bulk Maximum output current: 20mA Reference voltage: 2.5V |
Produkt ist nicht verfügbar |
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: SO8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: reel; tape Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP |
auf Bestellung 2014 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33153PG | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: IGBT gate driver Case: DIP8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: tube Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE100CA | ONSEMI |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W Type of diode: TVS Breakdown voltage: 100V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85.5V Max. forward impulse current: 4.4A Leakage current: 5µA |
Produkt ist nicht verfügbar |
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2SC3646S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Mounting: SMD Case: SOT89 Kind of package: reel; tape Type of transistor: NPN Collector current: 1A Power dissipation: 0.5W Collector-emitter voltage: 100V Current gain: 140...280 Frequency: 120MHz Polarisation: bipolar |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5233DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...200 |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
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6N138M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
Produkt ist nicht verfügbar |
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| NRVBSS16HE | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.68V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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FNB41060 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Type of integrated circuit: driver Output current: 10A Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Power dissipation: 32W Frequency: 20kHz Topology: IGBT three-phase bridge; NTC thermistor Technology: Motion SPM® 45 Case: SPMAA-A26 Number of channels: 6 Collector-emitter voltage: 600V Kind of integrated circuit: 3-phase motor controller; IPM |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZF3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 80...200 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTC143ZM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...200 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVDTC143ZM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...200 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74HCT86ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74HCT86ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NJVMJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Application: automotive industry Polarisation: bipolar Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 2A Power dissipation: 1.75W Collector-emitter voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MMSD4148 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.4W Capacitance: 4pF Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVTFWS005N08XLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVTFWS005N08XLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| FNC42060F2 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V Type of integrated circuit: driver Output current: 20A DC supply current: 2.65mA Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Insulation voltage: 2kV Power dissipation: 50W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCS20034DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV Kind of package: reel; tape Mounting: SMT Integrated circuit features: rail-to-rail output Type of integrated circuit: operational amplifier Number of channels: quad; 4 Case: SO14 Operating temperature: -40...125°C Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV20034DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV Kind of package: reel; tape Mounting: SMT Integrated circuit features: low voltage; rail-to-rail output Type of integrated circuit: operational amplifier Number of channels: quad; 4 Case: SO14 Operating temperature: -40...125°C Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC14518BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of package: reel; tape Mounting: SMD Case: SO16WB Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Kind of integrated circuit: BCD; up counter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC14518BDWG | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of package: tube Mounting: SMD Case: SO16WB Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Kind of integrated circuit: BCD; up counter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| LM2576D2T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| LM2576D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MC33375ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33375ST-1.8T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 0.3A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MOC3063M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Manufacturer series: MOC3063M Output voltage: 600V |
auf Bestellung 305 Stücke: Lieferzeit 14-21 Tag (e) |
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NL27WZ00USG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC Type of integrated circuit: digital Technology: CMOS Mounting: SMD Operating temperature: -55...125°C Delay time: 2.4ns Quiescent current: 1µA Number of outputs: 1 Number of channels: 2 Supply voltage: 1.65...5.5V Number of inputs: 2 Family: AUC Case: US8 Kind of gate: NAND |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP92BU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 40 Mounting: THT Kind of package: bulk Frequency: 50MHz |
auf Bestellung 7761 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP92TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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| NST3904DP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963 Polarisation: bipolar Case: SOT963 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.42W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 200MHz |
Produkt ist nicht verfügbar |
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| NST3904DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Polarisation: bipolar Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.357W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz |
Produkt ist nicht verfügbar |
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| NSVJ6904DSB6T1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA Polarisation: unipolar Semiconductor structure: common source Case: CPH6 Type of transistor: N-JFET x2 Kind of package: reel; tape Mounting: SMD Gate-source voltage: -25V Gate current: 10mA Drain current: 20mA Power dissipation: 0.7W Drain-source voltage: 25V |
Produkt ist nicht verfügbar |
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| NSVT3904DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Application: automotive industry Polarisation: bipolar Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.357W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz |
Produkt ist nicht verfügbar |
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ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.12kW Max. off-state voltage: 2.5V Breakdown voltage: 4V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 6µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NTBG028N170M1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 222nC On-state resistance: 57mΩ Power dissipation: 214W Drain current: 53A Pulsed drain current: 195A Drain-source voltage: 1.7kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| NVBG020N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 0.22µC On-state resistance: 50mΩ Power dissipation: 3.7W Drain current: 8.6A Pulsed drain current: 392A Drain-source voltage: 1.2kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| NTBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTBG020N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 0.22µC On-state resistance: 50mΩ Power dissipation: 3.7W Drain current: 8.6A Pulsed drain current: 392A Drain-source voltage: 1.2kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| NTBG022N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 142nC On-state resistance: 44mΩ Power dissipation: 220W Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| NVBG022N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -3...18V Gate charge: 142nC On-state resistance: 44mΩ Power dissipation: 220W Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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 |
1N5362BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB Semiconductor structure: single diode Mounting: THT Type of diode: Zener Power dissipation: 5W Tolerance: ±5% Manufacturer series: 1N53xxB Zener voltage: 28V Kind of package: bulk Case: CASE017AA |
auf Bestellung 652 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5368BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB Semiconductor structure: single diode Mounting: THT Type of diode: Zener Power dissipation: 5W Tolerance: ±5% Manufacturer series: 1N53xxB Zener voltage: 47V Kind of package: bulk Case: CASE017AA |
auf Bestellung 558 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5250B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB Kind of package: bulk Semiconductor structure: single diode Case: CASE017AG Mounting: THT Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 20V Manufacturer series: 1N52xxB |
auf Bestellung 4884 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC10ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 3 Number of inputs: 3 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Delay time: 16ns Quiescent current: 1µA Number of outputs: 3 |
Produkt ist nicht verfügbar |
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|
MC14070BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 150ns Family: HEF4000B |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS6H848NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Pulsed drain current: 319A Power dissipation: 37W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS6H848NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Pulsed drain current: 319A Power dissipation: 37W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ESD5Z5.0T5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 50nA Number of channels: 1 Capacitance: 80pF Max. forward impulse current: 9.4A Peak pulse power dissipation: 0.174kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZESD5Z5.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1N4937RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
auf Bestellung 2029 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4937G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
auf Bestellung 588 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC4052DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: VHC Family: VHC Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FGHL75T65MQDTL4 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL040N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 157nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 157nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 153nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 153nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ3C065080K3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ3C065080T3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM385BZ-2.5G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33153DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
auf Bestellung 2014 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 41+ | 1.74 EUR |
| 45+ | 1.6 EUR |
| 50+ | 1.56 EUR |
| MC33153PG | |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 70+ | 1.03 EUR |
| 75+ | 0.96 EUR |
| 77+ | 0.93 EUR |
| P6KE100CA |
|
Hersteller: ONSEMI
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Breakdown voltage: 100V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Max. forward impulse current: 4.4A
Leakage current: 5µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Breakdown voltage: 100V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Max. forward impulse current: 4.4A
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC3646S-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 125+ | 0.57 EUR |
| 188+ | 0.38 EUR |
| 250+ | 0.33 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.29 EUR |
| MUN5233DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 358+ | 0.2 EUR |
| 410+ | 0.17 EUR |
| 690+ | 0.1 EUR |
| 987+ | 0.073 EUR |
| 1145+ | 0.062 EUR |
| 1500+ | 0.057 EUR |
| 6N138M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBSS16HE |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FNB41060 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Output current: 10A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 32W
Frequency: 20kHz
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Motion SPM® 45
Case: SPMAA-A26
Number of channels: 6
Collector-emitter voltage: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Output current: 10A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 32W
Frequency: 20kHz
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Motion SPM® 45
Case: SPMAA-A26
Number of channels: 6
Collector-emitter voltage: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.96 EUR |
| 6+ | 13.87 EUR |
| 12+ | 12.91 EUR |
| NSBC143ZF3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC143ZM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| NSVDTC143ZM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| MC74HCT86ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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| MC74HCT86ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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| NJVMJD112T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Application: automotive industry
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.75W
Collector-emitter voltage: 100V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Application: automotive industry
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.75W
Collector-emitter voltage: 100V
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| MMSD4148 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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| NVTFWS005N08XLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFWS005N08XLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 900+ | 0.84 EUR |
| FNC42060F2 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V
Type of integrated circuit: driver
Output current: 20A
DC supply current: 2.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 50W
Collector-emitter voltage: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V
Type of integrated circuit: driver
Output current: 20A
DC supply current: 2.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 50W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCS20034DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
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Im Einkaufswagen
Stück im Wert von UAH
| NCV20034DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
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Im Einkaufswagen
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| MC14518BDWR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
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Im Einkaufswagen
Stück im Wert von UAH
| MC14518BDWG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
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| LM2576D2T-ADJG | |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2576D2T-ADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33375ST-3.3T3G | |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33375ST-1.8T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3063M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 120+ | 0.6 EUR |
| 134+ | 0.54 EUR |
| 145+ | 0.5 EUR |
| 156+ | 0.46 EUR |
| 200+ | 0.43 EUR |
| NL27WZ00USG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 2.4ns
Quiescent current: 1µA
Number of outputs: 1
Number of channels: 2
Supply voltage: 1.65...5.5V
Number of inputs: 2
Family: AUC
Case: US8
Kind of gate: NAND
Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 2.4ns
Quiescent current: 1µA
Number of outputs: 1
Number of channels: 2
Supply voltage: 1.65...5.5V
Number of inputs: 2
Family: AUC
Case: US8
Kind of gate: NAND
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 496+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| KSP92BU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 7761 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 589+ | 0.12 EUR |
| 831+ | 0.086 EUR |
| 995+ | 0.072 EUR |
| KSP92TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 417+ | 0.17 EUR |
| 633+ | 0.11 EUR |
| 826+ | 0.087 EUR |
| 1000+ | 0.078 EUR |
| NST3904DP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NST3904DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVJ6904DSB6T1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVT3904DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD5Z2.5T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG028N170M1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 222nC
On-state resistance: 57mΩ
Power dissipation: 214W
Drain current: 53A
Pulsed drain current: 195A
Drain-source voltage: 1.7kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 222nC
On-state resistance: 57mΩ
Power dissipation: 214W
Drain current: 53A
Pulsed drain current: 195A
Drain-source voltage: 1.7kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG020N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG020N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG022N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG022N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5362BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
auf Bestellung 652 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 281+ | 0.25 EUR |
| 304+ | 0.24 EUR |
| 336+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 1N5368BG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 232+ | 0.31 EUR |
| 258+ | 0.28 EUR |
| 327+ | 0.22 EUR |
| 1N5250B |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Mounting: THT
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Mounting: THT
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
auf Bestellung 4884 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1163+ | 0.061 EUR |
| 1563+ | 0.046 EUR |
| 2416+ | 0.03 EUR |
| 3247+ | 0.022 EUR |
| MC74HC10ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Delay time: 16ns
Quiescent current: 1µA
Number of outputs: 3
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Delay time: 16ns
Quiescent current: 1µA
Number of outputs: 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14070BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| NVMFS6H848NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H848NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD5Z5.0T5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Capacitance: 80pF
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 0.174kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Capacitance: 80pF
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 0.174kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD5Z5.0T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4937RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 642+ | 0.11 EUR |
| 754+ | 0.095 EUR |
| 983+ | 0.073 EUR |
| 1169+ | 0.061 EUR |
| 1316+ | 0.054 EUR |
| 1N4937G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 588 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 588+ | 0.12 EUR |
| MC74VHC4052DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH