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MMBD6100LT1G MMBD6100LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BE24AF7F784469&compId=MMBD6100LT1G.PDF?ci_sign=e641584af28f0bdf962d648b3d3f6fa44bc18757 Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
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MMBD1504A MMBD1504A ONSEMI MMBD1501A.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
auf Bestellung 2900 Stücke:
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358+0.2 EUR
516+0.14 EUR
708+0.1 EUR
807+0.089 EUR
898+0.08 EUR
1003+0.071 EUR
Mindestbestellmenge: 358
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MMBD4148 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDFC1EA3DE4745&compId=MMBD4148.pdf?ci_sign=678a4b0ec83976d1c367c3d46bde72e8144308c5 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
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MCH4020-TL-H ONSEMI ena1280-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
Produkt ist nicht verfügbar
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FDP047AN08A0 FDP047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
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18+4.15 EUR
23+3.15 EUR
50+2.57 EUR
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6N139M 6N139M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FB98EEB44C1C9E4&compId=6N139.pdf?ci_sign=6516884db1f1a450a7424a76c4cb26ca64a478d6 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
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6N139SDM 6N139SDM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD6DAB0E4D58749&compId=6N139SDM.pdf?ci_sign=11846d9f9d5e9d7ee2535bcfcb4491a96fcf47a4 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
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6N137M 6N137M ONSEMI 6N137.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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CAV24C32WE-GT3 ONSEMI CAV24C32-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HCPL2631 HCPL2631 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FD08CE7A167A9E4&compId=HCPL2631.pdf?ci_sign=0fb5a3eb590013d7ec8b045f3280bda1c34df30e Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
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HCPL2631SDM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C023CAB14A0D6&compId=HCPL2631SDM.pdf?ci_sign=8bb751d3909e92dc3730ea1db8501c5625275357 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
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MJ4502G MJ4502G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0A57A321E6469&compId=MJ4502G.PDF?ci_sign=12079b53f982c7410ee322dfb69ca691d14f484f Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
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NSVT1418LT1G ONSEMI nsvt1418l-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDA032N08 FDA032N08 ONSEMI fda032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.13 EUR
17+4.25 EUR
30+3.62 EUR
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N64S830HAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463760D5&compId=N64S830HA-D.pdf?ci_sign=8f6b4b8ac520df49e3e3767630d7d4bdee858f3f Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
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N01S830BAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778C60D5&compId=N01S830HA-D.pdf?ci_sign=dba68c514ec13d53aca0db206b4009300362a47b Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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N01S830BAT22IT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778DA0D5&compId=N01S830HA-D.pdf?ci_sign=dd8af5e72bb0ac9dfb37e587823e63e0e3334dd6 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778EE0D5&compId=N01S830HA-D.pdf?ci_sign=ecdae87dc015e2b12de60ec33c91c8e76c7be652 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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N01S830HAT22IT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779020D5&compId=N01S830HA-D.pdf?ci_sign=8c3b60010a50ede420ab6347fef98c24733ce4fe Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N25S830HAS22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D8A0D5&compId=N25S830HA-D.pdf?ci_sign=d57effb6aa50965f0ddc4f257f637ba8059bfff9 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N25S830HAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D9E0D5&compId=N25S830HA-D.pdf?ci_sign=828266c4ac3d654d122f0dc3245d294011f7bae6 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N64S830HAS22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E1ED897C0D5&compId=N64S830HA-D.pdf?ci_sign=eaa9aa05efc1d081d9fd09b56531a3d413ccb1c6 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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NXV08A170DB2 ONSEMI nxv08a170db2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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NCP1034DR2G NCP1034DR2G ONSEMI ncp1034-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
Produkt ist nicht verfügbar
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MID400 MID400 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC6FB277869E27&compId=MID400.pdf?ci_sign=8f3d9c1e28910b6a6b3f001cd9fe3395afcf7b60 Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
Produkt ist nicht verfügbar
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2SC5242OTU ONSEMI fja4313-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Produkt ist nicht verfügbar
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NCP1562ADBR2G ONSEMI ncp1562a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 ONSEMI fgy120t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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AFGY120T65SPD ONSEMI afgy120t65spd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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TIP29AG TIP29AG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
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41+1.77 EUR
63+1.14 EUR
84+0.86 EUR
Mindestbestellmenge: 41
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TIP29CG TIP29CG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 48 Stücke:
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48+1.49 EUR
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TIP29BG TIP29BG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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44+1.63 EUR
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NCV3063DR2G ONSEMI ncp3063-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NCV3063MNTXG ONSEMI ncp3063-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NLAS2750MUTAG ONSEMI nlas2750-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
Produkt ist nicht verfügbar
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SBE805-TL-W SBE805-TL-W ONSEMI en7291-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
Produkt ist nicht verfügbar
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SBE807-TL-W SBE807-TL-W ONSEMI ena1055-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
Produkt ist nicht verfügbar
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BZX85C5V1 BZX85C5V1 ONSEMI BZX85C10.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Produkt ist nicht verfügbar
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SBAS16LT1G SBAS16LT1G ONSEMI BAS16LT1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
758+0.094 EUR
848+0.084 EUR
1289+0.055 EUR
Mindestbestellmenge: 625
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FXMA108BQX ONSEMI FXMA108BQX.pdf Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Produkt ist nicht verfügbar
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SMUN5230DW1T1G SMUN5230DW1T1G ONSEMI dtc113ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
Produkt ist nicht verfügbar
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S310 ONSEMI SS32%7ES310.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Produkt ist nicht verfügbar
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NVF3055L108T1G NVF3055L108T1G ONSEMI NTF3055L108.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTF3055-100T1G NTF3055-100T1G ONSEMI NTF3055-100.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.6nC
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
89+0.81 EUR
107+0.67 EUR
117+0.61 EUR
200+0.55 EUR
500+0.48 EUR
1000+0.42 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
MJF3055G ONSEMI mjf3055-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP4305DDR2G NCP4305DDR2G ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4305DMNTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4305DMTTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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MMBTA42 ONSEMI MMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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2SC4027T-TL-E ONSEMI en2262-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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NCV8705ML33TCG ONSEMI ncv8705-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Application: automotive industry
Case: DFNW8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV8705MT33TCG ONSEMI ncv8705-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD
Application: automotive industry
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV8705MWADJTCG ONSEMI ncv8705-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Application: automotive industry
Case: DFN8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 0.8...5.15V
Number of channels: 1
Kind of voltage regulator: adjustable; LDO; linear
Produkt ist nicht verfügbar
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NVTYS010N06CLTWG ONSEMI nvtys010n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
Produkt ist nicht verfügbar
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GF1G ONSEMI GF1A-D.PDF FAIRS15782-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RGF1G RGF1G ONSEMI RGF1M-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
auf Bestellung 2726 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
242+0.3 EUR
304+0.24 EUR
500+0.21 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FDD5680 ONSEMI fdd5680-d.pdf 725a5d2d1b55431e38fe1ffcb13162d7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 100A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NSVDTA114EET1G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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RS1B ONSEMI RS1A-RS1M%20N0988%20REV.B.pdf rs1m-d.pdf RS1A SERIES_M2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RS1BFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBD6100LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BE24AF7F784469&compId=MMBD6100LT1G.PDF?ci_sign=e641584af28f0bdf962d648b3d3f6fa44bc18757
MMBD6100LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
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MMBD1504A MMBD1501A.pdf
MMBD1504A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
516+0.14 EUR
708+0.1 EUR
807+0.089 EUR
898+0.08 EUR
1003+0.071 EUR
Mindestbestellmenge: 358
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MMBD4148 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDFC1EA3DE4745&compId=MMBD4148.pdf?ci_sign=678a4b0ec83976d1c367c3d46bde72e8144308c5
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MCH4020-TL-H ena1280-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
Produkt ist nicht verfügbar
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FDP047AN08A0 fdh047an08a0-d.pdf
FDP047AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
23+3.15 EUR
50+2.57 EUR
Mindestbestellmenge: 18
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6N139M pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FB98EEB44C1C9E4&compId=6N139.pdf?ci_sign=6516884db1f1a450a7424a76c4cb26ca64a478d6
6N139M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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6N139SDM pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD6DAB0E4D58749&compId=6N139SDM.pdf?ci_sign=11846d9f9d5e9d7ee2535bcfcb4491a96fcf47a4
6N139SDM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Produkt ist nicht verfügbar
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6N137M 6N137.pdf
6N137M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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CAV24C32WE-GT3 CAV24C32-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HCPL2631 pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FD08CE7A167A9E4&compId=HCPL2631.pdf?ci_sign=0fb5a3eb590013d7ec8b045f3280bda1c34df30e
HCPL2631
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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HCPL2631SDM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C023CAB14A0D6&compId=HCPL2631SDM.pdf?ci_sign=8bb751d3909e92dc3730ea1db8501c5625275357
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
Produkt ist nicht verfügbar
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MJ4502G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0A57A321E6469&compId=MJ4502G.PDF?ci_sign=12079b53f982c7410ee322dfb69ca691d14f484f
MJ4502G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.99 EUR
Mindestbestellmenge: 9
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NSVT1418LT1G nsvt1418l-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDA032N08 fda032n08-d.pdf
FDA032N08
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
17+4.25 EUR
30+3.62 EUR
Mindestbestellmenge: 14
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N64S830HAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463760D5&compId=N64S830HA-D.pdf?ci_sign=8f6b4b8ac520df49e3e3767630d7d4bdee858f3f
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N01S830BAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778C60D5&compId=N01S830HA-D.pdf?ci_sign=dba68c514ec13d53aca0db206b4009300362a47b
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N01S830BAT22IT pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778DA0D5&compId=N01S830HA-D.pdf?ci_sign=dd8af5e72bb0ac9dfb37e587823e63e0e3334dd6
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N01S830HAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778EE0D5&compId=N01S830HA-D.pdf?ci_sign=ecdae87dc015e2b12de60ec33c91c8e76c7be652
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N01S830HAT22IT pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779020D5&compId=N01S830HA-D.pdf?ci_sign=8c3b60010a50ede420ab6347fef98c24733ce4fe
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N25S830HAS22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D8A0D5&compId=N25S830HA-D.pdf?ci_sign=d57effb6aa50965f0ddc4f257f637ba8059bfff9
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N25S830HAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D9E0D5&compId=N25S830HA-D.pdf?ci_sign=828266c4ac3d654d122f0dc3245d294011f7bae6
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N64S830HAS22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E1ED897C0D5&compId=N64S830HA-D.pdf?ci_sign=eaa9aa05efc1d081d9fd09b56531a3d413ccb1c6
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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NXV08A170DB2 nxv08a170db2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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NCP1034DR2G ncp1034-d.pdf
NCP1034DR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MID400 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC6FB277869E27&compId=MID400.pdf?ci_sign=8f3d9c1e28910b6a6b3f001cd9fe3395afcf7b60
MID400
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
Produkt ist nicht verfügbar
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2SC5242OTU fja4313-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Produkt ist nicht verfügbar
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NCP1562ADBR2G ncp1562a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 fgy120t65spd-f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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AFGY120T65SPD afgy120t65spd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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TIP29AG TIP29A-C_TIP30A-C.pdf
TIP29AG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
63+1.14 EUR
84+0.86 EUR
Mindestbestellmenge: 41
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TIP29CG TIP29A-C_TIP30A-C.pdf
TIP29CG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.49 EUR
Mindestbestellmenge: 48
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TIP29BG TIP29A-C_TIP30A-C.pdf
TIP29BG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
Mindestbestellmenge: 44
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NCV3063DR2G ncp3063-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV3063MNTXG ncp3063-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NLAS2750MUTAG nlas2750-d.pdf
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
Produkt ist nicht verfügbar
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SBE805-TL-W en7291-d.pdf
SBE805-TL-W
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
Produkt ist nicht verfügbar
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SBE807-TL-W ena1055-d.pdf
SBE807-TL-W
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
Produkt ist nicht verfügbar
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BZX85C5V1 BZX85C10.pdf
BZX85C5V1
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Produkt ist nicht verfügbar
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SBAS16LT1G BAS16LT1G.PDF
SBAS16LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
758+0.094 EUR
848+0.084 EUR
1289+0.055 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
FXMA108BQX FXMA108BQX.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Produkt ist nicht verfügbar
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SMUN5230DW1T1G dtc113ed-d.pdf
SMUN5230DW1T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
Produkt ist nicht verfügbar
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S310 SS32%7ES310.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Produkt ist nicht verfügbar
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NVF3055L108T1G NTF3055L108.PDF
NVF3055L108T1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTF3055-100T1G NTF3055-100.PDF
NTF3055-100T1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.6nC
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
89+0.81 EUR
107+0.67 EUR
117+0.61 EUR
200+0.55 EUR
500+0.48 EUR
1000+0.42 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
MJF3055G mjf3055-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
Produkt ist nicht verfügbar
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NCP4305DDR2G ncp4305-d.pdf
NCP4305DDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4305DMNTWG ncp4305-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4305DMTTWG ncp4305-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA42 MMBTA42.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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2SC4027T-TL-E en2262-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
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NCV8705ML33TCG ncv8705-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Application: automotive industry
Case: DFNW8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
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NCV8705MT33TCG ncv8705-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD
Application: automotive industry
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
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NCV8705MWADJTCG ncv8705-d.pdf
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Application: automotive industry
Case: DFN8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 0.8...5.15V
Number of channels: 1
Kind of voltage regulator: adjustable; LDO; linear
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NVTYS010N06CLTWG nvtys010n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
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GF1G GF1A-D.PDF FAIRS15782-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
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RGF1G RGF1M-D.PDF
RGF1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
auf Bestellung 2726 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
242+0.3 EUR
304+0.24 EUR
500+0.21 EUR
Mindestbestellmenge: 200
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FDD5680 fdd5680-d.pdf 725a5d2d1b55431e38fe1ffcb13162d7.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 100A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NSVDTA114EET1G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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RS1B RS1A-RS1M%20N0988%20REV.B.pdf rs1m-d.pdf RS1A SERIES_M2304.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RS1BFA rs1afa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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