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KSP44TA KSP44TA ONSEMI KSP44_45.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
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ADT7490ARQZ-REEL ONSEMI ADT7490-D.PDF Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; QSOP24; SMD; 3÷3.6V
Mounting: SMD
Supply voltage: 3...3.6V
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...125°C
Case: QSOP24
Interface: PWM; SMBus
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FCP099N60E FCP099N60E ONSEMI FCP099N60E-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
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MC74LCX244DTG MC74LCX244DTG ONSEMI MC74LCX244DTG.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 10µA
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74LCX244BQX ONSEMI 74LCX244-D.PDF 74lcx244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...3.6V DC
Quiescent current: 10µA
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74LCX244WMX 74LCX244WMX ONSEMI 74LCX244-D.PDF FAIRS46352-1.pdf?t.download=true&u=5oefqw description Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...3.6V DC
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MC74LCX244DTR2G MC74LCX244DTR2G ONSEMI mc74lcx244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
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FSA2466UMX ONSEMI fsa2466-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; switch; DPDT; Ch: 4; UMLP16; 1.65÷4.45V; 500nA
Mounting: SMD
Supply voltage: 1.65...4.45V
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 1.6Ω
Quiescent current: 500nA
Output configuration: DPDT
Case: UMLP16
Kind of integrated circuit: switch
Number of channels: 4
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MC14022BDR2G MC14022BDR2G ONSEMI MC14022B-D.pdf Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: counter; octal
Number of channels: 1
Mounting: SMD
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MC1455BDR2G MC1455BDR2G ONSEMI MC1455.pdf Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
DC supply current: 10mA
Output current: 0.2A
Supply voltage: 4.5...16V DC
Controlled voltage: 10V
Kind of integrated circuit: astable; monostable; RC timer
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MC14555BDR2G ONSEMI mc14555b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SOIC16; OUT: 4
Mounting: SMD
Delay time: 70ns
Supply voltage: 3...18V
Type of integrated circuit: digital
Operating temperature: -55...125°C
Quiescent current: 15nA
Number of inputs: 1
Case: SOIC16
Number of outputs: 4
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
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MC14556BDR2G ONSEMI mc14555b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; CMOS; SMD; SOIC16
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Case: SOIC16
Number of outputs: 4
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
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MURS360T3G MURS360T3G ONSEMI MURS360T3G.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
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MURS360BT3G MURS360BT3G ONSEMI murs360bt3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
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KSA928AYTA KSA928AYTA ONSEMI KSA928A.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
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MURS120T3G MURS120T3G ONSEMI murs120t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
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MURS260T3G MURS260T3G ONSEMI MURS260T3G.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
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MURS480ET3G ONSEMI MURS480ET3G.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
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MURS220T3G MURS220T3G ONSEMI murs220t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
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TCA0372DWR2G ONSEMI tca0372-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
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TCA0372DWR2G ONSEMI tca0372-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
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DTA144TET1G ONSEMI DTA144T-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 120...250
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DTA144TM3T5G DTA144TM3T5G ONSEMI DTA144T-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 120...250
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DTA144WET1G ONSEMI DTA144W-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80...140
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FDC3612 FDC3612 ONSEMI FDC3612.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.24Ω
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NDS332P NDS332P ONSEMI NDS332P-D.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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MBR60H100CTG MBR60H100CTG ONSEMI MBR60H100CTG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Max. load current: 60A
Max. forward impulse current: 350A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
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MBR60L45CTG MBR60L45CTG ONSEMI MBR60L45CTG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Max. load current: 60A
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
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MBR41H100CTG MBR41H100CTG ONSEMI mbr41h100ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
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SS25 SS25 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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SS25FA SS25FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
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1N5225B 1N5225B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
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1N5228BTR 1N5228BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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1N5222B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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1N5226BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
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1N5227B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
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1N5223B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; 1N52xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 2.7V
Type of diode: Zener
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1N5227BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
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1N5229BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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FOD3125 FOD3125 ONSEMI FOD3125.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
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NTND31225CZTAG ONSEMI ntnd31225cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
Produkt ist nicht verfügbar
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NCP45560IMNTWG-H ONSEMI ncp45560-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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NCP45560IMNTWG-L ONSEMI ncp45560-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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FQD2N90TM FQD2N90TM ONSEMI fqu2n90tu_am002-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Mounting: SMD
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FQU2N90TU-AM002 ONSEMI FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Produkt ist nicht verfügbar
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FQU2N90TU-WS ONSEMI fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Produkt ist nicht verfügbar
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NGTB35N65FL2WG NGTB35N65FL2WG ONSEMI ngtb35n65fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector current: 35A
Collector-emitter voltage: 650V
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
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LM7301SN1T1G LM7301SN1T1G ONSEMI lm7301-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...32V DC
Case: SOT23-5
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 55nA
Produkt ist nicht verfügbar
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74VHC125MTCX 74VHC125MTCX ONSEMI 74VHC125-D.PDF description Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2SA2016-TD-E 2SA2016-TD-E ONSEMI 2SA2016-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Case: SOT89
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Frequency: 290MHz
Collector current: 7A
Mounting: SMD
Collector-emitter voltage: 50V
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2SA2012-TD-E 2SA2012-TD-E ONSEMI 2sa2012-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
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Mindestbestellmenge: 3 Stücke
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2SA2040-TL-E 2SA2040-TL-E ONSEMI 2SA2040-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
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2SA2153-TD-E 2SA2153-TD-E ONSEMI 2sa2153-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2013-TD-E 2SA2013-TD-E ONSEMI 2SA2013-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2029M3T5G 2SA2029M3T5G ONSEMI 2SA2029M3-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2039-TL-E 2SA2039-TL-E ONSEMI EN6912-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2125-TD-E 2SA2125-TD-E ONSEMI 2SA2125-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Produkt ist nicht verfügbar
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2SA2125-TD-H 2SA2125-TD-H ONSEMI 2SA2125-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Produkt ist nicht verfügbar
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2SA2126-TL-E 2SA2126-TL-E ONSEMI 2SA2126-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2202-TD-E 2SA2202-TD-E ONSEMI 2sa2202-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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KSP44TA KSP44_45.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
auf Bestellung 387 Stücke:
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ADT7490ARQZ-REEL ADT7490-D.PDF
Hersteller: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; QSOP24; SMD; 3÷3.6V
Mounting: SMD
Supply voltage: 3...3.6V
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...125°C
Case: QSOP24
Interface: PWM; SMBus
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FCP099N60E FCP099N60E-D.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Produkt ist nicht verfügbar
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MC74LCX244DTG MC74LCX244DTG.PDF
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 10µA
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74LCX244BQX 74LCX244-D.PDF 74lcx244-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...3.6V DC
Quiescent current: 10µA
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74LCX244WMX description 74LCX244-D.PDF FAIRS46352-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...3.6V DC
Produkt ist nicht verfügbar
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MC74LCX244DTR2G mc74lcx244-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FSA2466UMX fsa2466-d.pdf
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; switch; DPDT; Ch: 4; UMLP16; 1.65÷4.45V; 500nA
Mounting: SMD
Supply voltage: 1.65...4.45V
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 1.6Ω
Quiescent current: 500nA
Output configuration: DPDT
Case: UMLP16
Kind of integrated circuit: switch
Number of channels: 4
Produkt ist nicht verfügbar
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MC14022BDR2G MC14022B-D.pdf
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: counter; octal
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MC1455BDR2G MC1455.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
DC supply current: 10mA
Output current: 0.2A
Supply voltage: 4.5...16V DC
Controlled voltage: 10V
Kind of integrated circuit: astable; monostable; RC timer
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MC14555BDR2G mc14555b-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SOIC16; OUT: 4
Mounting: SMD
Delay time: 70ns
Supply voltage: 3...18V
Type of integrated circuit: digital
Operating temperature: -55...125°C
Quiescent current: 15nA
Number of inputs: 1
Case: SOIC16
Number of outputs: 4
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
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MC14556BDR2G mc14555b-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; CMOS; SMD; SOIC16
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Case: SOIC16
Number of outputs: 4
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Produkt ist nicht verfügbar
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MURS360T3G MURS360T3G.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
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MURS360BT3G murs360bt3-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
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KSA928AYTA KSA928A.PDF
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
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MURS120T3G murs120t3-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
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MURS260T3G MURS260T3G.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
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MURS480ET3G MURS480ET3G.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
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MURS220T3G murs220t3-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
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TCA0372DWR2G tca0372-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
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TCA0372DWR2G tca0372-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
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Mindestbestellmenge: 1000 Stücke
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DTA144TET1G DTA144T-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 120...250
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DTA144TM3T5G DTA144T-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 120...250
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DTA144WET1G DTA144W-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80...140
Produkt ist nicht verfügbar
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FDC3612 FDC3612.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.24Ω
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NDS332P NDS332P-D.PDF
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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MBR60H100CTG MBR60H100CTG.PDF
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Max. load current: 60A
Max. forward impulse current: 350A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
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MBR60L45CTG MBR60L45CTG.PDF
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Max. load current: 60A
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
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MBR41H100CTG mbr41h100ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
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SS25 S210.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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SS25FA ss29fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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1N5225B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
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1N5228BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
auf Bestellung 44990 Stücke:
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1N5222B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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1N5226BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5227B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5223B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; 1N52xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 2.7V
Type of diode: Zener
Produkt ist nicht verfügbar
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1N5227BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5229BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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FOD3125 FOD3125.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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NTND31225CZTAG ntnd31225cz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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NCP45560IMNTWG-H ncp45560-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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NCP45560IMNTWG-L ncp45560-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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FQD2N90TM fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Mounting: SMD
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FQU2N90TU-AM002 FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Produkt ist nicht verfügbar
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FQU2N90TU-WS fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Produkt ist nicht verfügbar
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NGTB35N65FL2WG ngtb35n65fl2w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector current: 35A
Collector-emitter voltage: 650V
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
auf Bestellung 13 Stücke:
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LM7301SN1T1G lm7301-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...32V DC
Case: SOT23-5
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 55nA
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74VHC125MTCX description 74VHC125-D.PDF
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2SA2016-TD-E 2SA2016-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Case: SOT89
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Frequency: 290MHz
Collector current: 7A
Mounting: SMD
Collector-emitter voltage: 50V
auf Bestellung 700 Stücke:
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2SA2012-TD-E 2sa2012-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
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2SA2040-TL-E 2SA2040-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
auf Bestellung 363 Stücke:
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2SA2153-TD-E 2sa2153-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2013-TD-E 2SA2013-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2029M3T5G 2SA2029M3-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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2SA2039-TL-E EN6912-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2125-TD-E 2SA2125-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Produkt ist nicht verfügbar
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2SA2125-TD-H 2SA2125-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Produkt ist nicht verfügbar
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2SA2126-TL-E 2SA2126-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2202-TD-E 2sa2202-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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