| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FQP24N08 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 25nC On-state resistance: 60mΩ Power dissipation: 75W Drain current: 17A Pulsed drain current: 96A Gate-source voltage: ±25V Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
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| FDMS4D4N08C | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56 Case: Power56 Kind of channel: enhancement Technology: PowerTrench® Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 56nC On-state resistance: 7.2mΩ Power dissipation: 125W Drain current: 78A Pulsed drain current: 498A Gate-source voltage: ±20V Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LC709205FXE-01TBG | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po Kind of integrated circuit: battery charging controller Mounting: SMD Interface: I2C Type of integrated circuit: PMIC Kind of package: reel; tape Case: WLCSP12 Operating temperature: -40...85°C Supply voltage: 2.5...5V DC Number of rechargeable batteries: 1 x Li-Ion / Li-Po |
Produkt ist nicht verfügbar |
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| FSL206MRLX | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.6A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: LSOP8 Mounting: SMD Operating temperature: -40...115°C Input voltage: 85...265V On-state resistance: 19Ω Duty cycle factor: 66...78% Power: 7W Application: SMPS Operating voltage: 7...24.5V DC |
Produkt ist nicht verfügbar |
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| MOC3042SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3042SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3042SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3042TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3042VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC1204 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.4kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC12005 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 50V Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC1201W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 100V Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: wire Ø 1.0mm Case: GBPC-W Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC1206W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.6kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: wire Ø 1.0mm Case: GBPC-W Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC1201 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 100V Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC1206 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.6kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC1208W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.8kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: wire Ø 1.0mm Case: GBPC-W Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MOC3082M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002W | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323 Mounting: SMD Kind of package: reel; tape Case: SC70; SOT323 Power dissipation: 0.2W Drain current: 0.115A On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
auf Bestellung 1470 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2138LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ |
auf Bestellung 3640 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5138T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MUN5238T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MBRB1545CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: reel; tape Max. forward impulse current: 150A Max. load current: 15A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SBRB1545CTG | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: tube Max. forward impulse current: 150A Max. load current: 15A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBTA92 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MSQA6V1W5T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.1...7.2V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 3V Number of channels: 4 Kind of package: reel; tape Application: universal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FQB8P10TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.7A Pulsed drain current: -32A Power dissipation: 65W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQD8P10TM-F085 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Pulsed drain current: -26.4A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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| 2SD1628G-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 280...560 Polarisation: bipolar Frequency: 120MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 5A Collector-emitter voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2SD1620-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 140 Polarisation: bipolar Frequency: 200MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 3A Collector-emitter voltage: 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2SD1623S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 140...280 Polarisation: bipolar Frequency: 150MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2SD1623T-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 200...400 Polarisation: bipolar Frequency: 150MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGD3245G2-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD Case: DPAK Version: ESD Type of transistor: IGBT Application: ignition systems Kind of package: reel; tape Features of semiconductor devices: logic level Mounting: SMD Gate charge: 23nC Gate-emitter voltage: ±10V Collector current: 23A Power dissipation: 150W Collector-emitter voltage: 450V |
Produkt ist nicht verfügbar |
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FDD2670 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.6A Pulsed drain current: 20A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 275mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NCS20166SN2T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Integrated circuit features: precision; rail-to-rail Mounting: SMT Number of channels: single Case: SOT23-5 Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 0.55mV Slew rate: 6V/μs Bandwidth: 10MHz Voltage supply range: 3...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCV20166SN2T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Integrated circuit features: low noise Mounting: SMT Number of channels: single Case: SOT23-5 Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 0.55mV Slew rate: 6V/μs Bandwidth: 10MHz Voltage supply range: 3...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14044BDR2G | ONSEMI |
Category: LatchesDescription: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16 Kind of package: reel; tape Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of integrated circuit: RS latch Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of inputs: 2 Supply voltage: 3...18V DC Number of channels: 4 |
Produkt ist nicht verfügbar |
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FSA5157P6X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷4.3VDC; reel,tape; CMOS Type of integrated circuit: analog switch Number of channels: 1 Case: SC70-6; SC88 Supply voltage: 1.65...4.3V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT Quiescent current: 500nA Technology: CMOS |
Produkt ist nicht verfügbar |
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| FGY100T120SWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 433W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 284nC Kind of package: tube |
Produkt ist nicht verfügbar |
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MMBZ27VALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 27V; 1A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Leakage current: 50nA Max. forward impulse current: 1A Number of channels: 2 Version: ESD Max. off-state voltage: 22V Application: universal Breakdown voltage: 27V Peak pulse power dissipation: 40W |
auf Bestellung 2063 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16XV2T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 4055 Stücke: Lieferzeit 14-21 Tag (e) |
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| FSA3357K8X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 1; UMLP20; CMOS Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: UMLP20 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Technology: CMOS |
Produkt ist nicht verfügbar |
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| ADP3211AMNR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; QFN32; SMD; reel,tape Type of integrated circuit: PMIC Mounting: SMD Case: QFN32 Kind of package: reel; tape Kind of integrated circuit: DC/DC converter |
Produkt ist nicht verfügbar |
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MBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: reel; tape Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1V Max. load current: 20A Max. forward impulse current: 150A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC74LCX16244DTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Case: TSSOP48 Mounting: SMD Kind of integrated circuit: buffer; line driver; non-inverting Operating temperature: -40...85°C Type of integrated circuit: digital Supply voltage: 2...3.6V DC Number of channels: 16 Manufacturer series: LCX Kind of output: 3-state |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDT86244 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 4.9nC On-state resistance: 128mΩ Power dissipation: 2.2W Drain current: 2.8A Pulsed drain current: 12A Drain-source voltage: 150V Case: SOT223 |
Produkt ist nicht verfügbar |
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MMSZ5267BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 75V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 75V Manufacturer series: MMSZ52xxB |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP085N10A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 96A; Idm: 384A; 188W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Pulsed drain current: 384A Power dissipation: 188W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDPF085N10A | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 200A; 33.3W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 200A Power dissipation: 33.3W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV4016HV6-T2 | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; 4-wire; TQFN24-EP; 100mA; Ch: 16; 3÷5.5VDC Application: automotive industry Output current: 0.1A Supply voltage: 3...5.5V DC Operating temperature: -40...125°C Case: TQFN24-EP Mounting: SMD Kind of package: reel; tape Maximum output current: 150mA Number of channels: 16 Frequency: 25MHz Kind of integrated circuit: LED driver Interface: 4-wire Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBD352LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBD353LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Max. off-state voltage: 7V Case: SOT23 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBD354LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Max. off-state voltage: 7V Case: SOT23 Mounting: SMD Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBD355LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Max. off-state voltage: 7V Case: SOT23 Mounting: SMD Semiconductor structure: common anode; double Features of semiconductor devices: PIN; RF Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 1SV264-TL-E | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC70 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVP249SDSF3T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 50mA; SC70; reel,tape Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC70 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVP264SDSF3T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC70 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBD354LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape Type of diode: switching Max. off-state voltage: 7V Case: SOT23 Mounting: SMD Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Max. forward voltage: 0.6V Kind of package: reel; tape Application: automotive industry Power dissipation: 0.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBD353LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape Type of diode: switching Max. off-state voltage: 7V Case: SOT23 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 0.6V Kind of package: reel; tape Application: automotive industry Reverse recovery time: 10ns Power dissipation: 0.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQP24N08 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 60mΩ
Power dissipation: 75W
Drain current: 17A
Pulsed drain current: 96A
Gate-source voltage: ±25V
Drain-source voltage: 80V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 60mΩ
Power dissipation: 75W
Drain current: 17A
Pulsed drain current: 96A
Gate-source voltage: ±25V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDMS4D4N08C |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Case: Power56
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 7.2mΩ
Power dissipation: 125W
Drain current: 78A
Pulsed drain current: 498A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Case: Power56
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 7.2mΩ
Power dissipation: 125W
Drain current: 78A
Pulsed drain current: 498A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LC709205FXE-01TBG |
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Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FSL206MRLX |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...115°C
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 66...78%
Power: 7W
Application: SMPS
Operating voltage: 7...24.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...115°C
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 66...78%
Power: 7W
Application: SMPS
Operating voltage: 7...24.5V DC
Produkt ist nicht verfügbar
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| MOC3042SR2M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MOC3042SR2VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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| MOC3042SVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MOC3042TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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| MOC3042VM |
![]() |
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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| GBPC1204 |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.4kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.4kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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| GBPC12005 |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 50V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 50V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
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| GBPC1201W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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| GBPC1206W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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| GBPC1201 |
![]() |
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
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| GBPC1206 |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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| GBPC1208W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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| MOC3082M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 2N7002W |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Power dissipation: 0.2W
Drain current: 0.115A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Power dissipation: 0.2W
Drain current: 0.115A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 296+ | 0.24 EUR |
| 455+ | 0.16 EUR |
| 544+ | 0.13 EUR |
| 758+ | 0.094 EUR |
| 1000+ | 0.084 EUR |
| MMUN2138LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
auf Bestellung 3640 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 1471+ | 0.049 EUR |
| 2253+ | 0.032 EUR |
| 2924+ | 0.024 EUR |
| 3226+ | 0.022 EUR |
| 3640+ | 0.02 EUR |
| MUN5138T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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| MUN5238T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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| MBRB1545CTT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
Produkt ist nicht verfügbar
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| SBRB1545CTG |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
Produkt ist nicht verfügbar
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| MMBTA92 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MSQA6V1W5T2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Produkt ist nicht verfügbar
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| FQB8P10TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| FQD8P10TM-F085 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2SD1628G-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Produkt ist nicht verfügbar
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| 2SD1620-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Produkt ist nicht verfügbar
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| 2SD1623S-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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| 2SD1623T-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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| FGD3245G2-F085C |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
Produkt ist nicht verfügbar
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| FDD2670 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NCS20166SN2T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NCV20166SN2T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| STZD3155CT1G |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.079 EUR |
| MC14044BDR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
Produkt ist nicht verfügbar
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| FSA5157P6X |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷4.3VDC; reel,tape; CMOS
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC70-6; SC88
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 500nA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷4.3VDC; reel,tape; CMOS
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC70-6; SC88
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 500nA
Technology: CMOS
Produkt ist nicht verfügbar
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| FGY100T120SWD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Produkt ist nicht verfügbar
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| MMBZ27VALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1A
Number of channels: 2
Version: ESD
Max. off-state voltage: 22V
Application: universal
Breakdown voltage: 27V
Peak pulse power dissipation: 40W
Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1A
Number of channels: 2
Version: ESD
Max. off-state voltage: 22V
Application: universal
Breakdown voltage: 27V
Peak pulse power dissipation: 40W
auf Bestellung 2063 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 511+ | 0.14 EUR |
| 658+ | 0.11 EUR |
| 1462+ | 0.049 EUR |
| 1946+ | 0.037 EUR |
| 2063+ | 0.034 EUR |
| SBAS16XV2T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 4055 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 1316+ | 0.054 EUR |
| 1471+ | 0.049 EUR |
| 1713+ | 0.042 EUR |
| 2203+ | 0.032 EUR |
| 2874+ | 0.025 EUR |
| 3165+ | 0.023 EUR |
| 3449+ | 0.021 EUR |
| FSA3357K8X |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; UMLP20; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: UMLP20
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; UMLP20; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: UMLP20
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
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| ADP3211AMNR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
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| MBRB20200CTT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 20A
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| SBRB20200CTT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
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| MC74LCX16244DTG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 2...3.6V DC
Number of channels: 16
Manufacturer series: LCX
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 2...3.6V DC
Number of channels: 16
Manufacturer series: LCX
Kind of output: 3-state
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| FDT86244 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Case: SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Case: SOT223
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| MMSZ5267BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: MMSZ52xxB
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 124+ | 0.57 EUR |
| FDP085N10A-F102 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; Idm: 384A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Pulsed drain current: 384A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; Idm: 384A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Pulsed drain current: 384A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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| FDPF085N10A |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 200A; 33.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 33.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 200A; 33.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 33.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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| CAV4016HV6-T2 |
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; 4-wire; TQFN24-EP; 100mA; Ch: 16; 3÷5.5VDC
Application: automotive industry
Output current: 0.1A
Supply voltage: 3...5.5V DC
Operating temperature: -40...125°C
Case: TQFN24-EP
Mounting: SMD
Kind of package: reel; tape
Maximum output current: 150mA
Number of channels: 16
Frequency: 25MHz
Kind of integrated circuit: LED driver
Interface: 4-wire
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; LED driver; 4-wire; TQFN24-EP; 100mA; Ch: 16; 3÷5.5VDC
Application: automotive industry
Output current: 0.1A
Supply voltage: 3...5.5V DC
Operating temperature: -40...125°C
Case: TQFN24-EP
Mounting: SMD
Kind of package: reel; tape
Maximum output current: 150mA
Number of channels: 16
Frequency: 25MHz
Kind of integrated circuit: LED driver
Interface: 4-wire
Type of integrated circuit: driver
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| MMBD352LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
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| MMBD353LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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| MMBD354LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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| MMBD355LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common anode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common anode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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| 1SV264-TL-E |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| NSVP249SDSF3T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Application: automotive industry
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| NSVP264SDSF3T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| NSVMMBD354LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.3W
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.3W
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| NSVMMBD353LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 10ns
Power dissipation: 0.3W
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 10ns
Power dissipation: 0.3W
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