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MMUN2133LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.246W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMMUN2133LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.4W Collector-emitter voltage: 50V Current gain: 80...140 Quantity in set/package: 3000pcs. Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
VEONSVMMUN2133LT1G | ONSEMI |
Category: Unclassified Description: VEONSVMMUN2133LT1G |
auf Bestellung 993000 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1203P60G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Mounting: THT Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 7.8...16V DC Kind of package: tube Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
2SB1201S-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.8W Collector current: 2A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ4684T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ4xxT1G Leakage current: 7.5µA |
auf Bestellung 5655 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF320N06L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhancement Technology: PowerTrench® Features of semiconductor devices: logic level Pulsed drain current: 84A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NLSX4401MU1TCG | ONSEMI |
![]() Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Supply voltage: 1.5...5.5V DC Mounting: SMD Case: uDFN6 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 1 Number of outputs: 1 Integrated circuit features: auto-direction sensing Frequency: 24MHz |
Produkt ist nicht verfügbar |
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MBRA140T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. load current: 2A Max. forward voltage: 0.74V |
auf Bestellung 5809 Stücke: Lieferzeit 14-21 Tag (e) |
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TCA0372BDWR2G | ONSEMI |
![]() Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVUB1620CTRT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common anode; double Case: D2PAK Max. load current: 16A Kind of package: reel; tape Max. forward voltage: 1.2V Max. forward impulse current: 100A Reverse recovery time: 85ns Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MBR745G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.57V Max. load current: 7.5A |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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NTTFS020N06CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVTFS020N06CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVTFWS020N06CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUR820G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.975V Max. load current: 16A Reverse recovery time: 35ns Heatsink thickness: max. 1.4mm |
auf Bestellung 713 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C2V4ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SZBZX84C2V4LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50µA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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50C02CH-TL-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; CPH3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.7W Case: CPH3 Current gain: 300...800 Mounting: SMD Kind of package: reel; tape Frequency: 500MHz |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4702T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: MMSZ4xxT1G |
auf Bestellung 6463 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ4702T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: MMSZ4xxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ4696T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: MMSZ4xxT1G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZMMSZ4696T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: MMSZ4xxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5934BG | ONSEMI |
![]() Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB Manufacturer series: 1N59xxB Case: CASE59 Mounting: THT Semiconductor structure: single diode Type of diode: Zener Leakage current: 1µA Power dissipation: 3W Tolerance: ±5% Zener voltage: 24V Kind of package: bulk |
auf Bestellung 1063 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5934BRLG | ONSEMI |
![]() Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Manufacturer series: 1N59xxB Case: CASE59 Mounting: THT Semiconductor structure: single diode Type of diode: Zener Leakage current: 1µA Power dissipation: 3W Tolerance: ±5% Zener voltage: 24V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1SMA5934BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode Manufacturer series: 1SMA59xxBT3G Case: SMA Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 1.5W Tolerance: ±5% Zener voltage: 24V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MMBZ5248BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MMBZ5248ELT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxELT1G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SZMMBZ5248BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Application: automotive industry Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SZMMBZ5248ELT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxELT1G Application: automotive industry |
Produkt ist nicht verfügbar |
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MC74LVX4053DR2G | ONSEMI |
![]() Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS Mounting: SMD Manufacturer series: LVX Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2.5...6V DC Number of channels: 3 Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Type of integrated circuit: digital Technology: CMOS Case: SOIC16 |
Produkt ist nicht verfügbar |
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MC74LVX4053DTG | ONSEMI |
![]() Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS Mounting: SMD Manufacturer series: LVX Kind of package: tube Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2.5...6V DC Number of channels: 3 Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Type of integrated circuit: digital Technology: CMOS Case: TSSOP16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC74LVX4053DTR2G | ONSEMI |
![]() Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS Mounting: SMD Manufacturer series: LVX Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2.5...6V DC Number of channels: 3 Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Type of integrated circuit: digital Technology: CMOS Case: TSSOP16 |
Produkt ist nicht verfügbar |
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HUF76423P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB Kind of package: tube Kind of channel: enhancement Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Gate charge: 34nC On-state resistance: 35mΩ Gate-source voltage: ±16V Drain current: 23A Drain-source voltage: 60V Power dissipation: 85W |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF76429S3ST | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB Kind of channel: enhancement Mounting: SMD Case: TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 38nC On-state resistance: 25mΩ Gate-source voltage: ±16V Drain current: 44A Drain-source voltage: 60V Power dissipation: 110W |
Produkt ist nicht verfügbar |
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NCS21671DM100R2G | ONSEMI |
![]() Description: IC: instrumentation amplifier; 35kHz; Micro10; 100V/V; 0.01mV Type of integrated circuit: instrumentation amplifier Bandwidth: 35kHz Mounting: SMT Case: Micro10 Operating temperature: -40...125°C Slew rate: 0.3V/μs Gain: 100V/V Input offset voltage: 10µV Voltage supply range: 1.8...5.5V DC Kind of package: reel; tape Input bias current: 35µA Input offset current: 300nA Number of channels: single |
Produkt ist nicht verfügbar |
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FDN5630 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3 Mounting: SMD Case: SuperSOT-3 Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 10nC On-state resistance: 0.18Ω Power dissipation: 0.5W Drain current: 1.7A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Features of semiconductor devices: logic level Type of transistor: N-MOSFET |
auf Bestellung 3302 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3052M | ONSEMI |
![]() Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Mounting: THT Manufacturer series: MOC3052M |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC5502DTM | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 600V; 2A; 87.83W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 600V Collector current: 2A Power dissipation: 87.83W Case: DPAK Pulsed collector current: 4A Current gain: 12...30 Mounting: SMD Kind of package: reel; tape Frequency: 11MHz Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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KSC5502TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 600V Collector current: 2A Power dissipation: 50W Case: TO220AB Current gain: 12...30 Mounting: THT Kind of package: tube Pulsed collector current: 4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC79L24ABPG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -24V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: bulk |
Produkt ist nicht verfügbar |
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MC79L24ACPG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -24V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: bulk |
Produkt ist nicht verfügbar |
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MC79L24ACPRMG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -24V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
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MC79L24ACPRPG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -24V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
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NXH008T120M3F2PTHG | ONSEMI |
![]() Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 127A Case: PIM29 Topology: 3-level inverter TNPC Electrical mounting: Press-in PCB On-state resistance: 15mΩ Pulsed drain current: 387A Power dissipation: 371W Technology: SiC Gate-source voltage: -10...22V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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NXH011T120M3F2PTHG | ONSEMI |
![]() Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 91A Case: PIM29 Topology: 3-level inverter TNPC Electrical mounting: Press-in PCB On-state resistance: 28.1mΩ Pulsed drain current: 273A Power dissipation: 272W Technology: SiC Gate-source voltage: -10...22V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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BAV99LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.75V Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
Produkt ist nicht verfügbar |
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SBAV99LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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FDMA430NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±12V On-state resistance: 61mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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1N5231BTR | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N52xxB |
Produkt ist nicht verfügbar |
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LM2575T-3.3G | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5 Mounting: THT Kind of package: tube Case: TO220-5 Frequency: 42...63kHz Topology: buck Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Operating temperature: -40...125°C Output current: 1A Number of channels: 1 Input voltage: 4.75...40V DC Output voltage: 3.3V DC |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575TV-ADJG | ONSEMI |
![]() Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MMSZ5248B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
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MMBD1204 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Case: SOT23 Capacitance: 2pF Reverse recovery time: 4ns Leakage current: 0.1mA Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.1V Max. off-state voltage: 100V Kind of package: reel; tape Semiconductor structure: common cathode; double Type of diode: switching Mounting: SMD |
auf Bestellung 1420 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFWS9D6P04M8LTAG | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -64A; Idm: -311A; 38W; WDFNW8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -64A Pulsed drain current: -311A Power dissipation: 38W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 34.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVTFS6H888NWFTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 47A Power dissipation: 9.2W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVTFS5C466NLWFTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 51A; Idm: 214A; 19W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Pulsed drain current: 214A Power dissipation: 19W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVTFS5C673NLTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVTFS6H850NTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 68A Pulsed drain current: 300A Power dissipation: 53W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVTFS003N04CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 103A Pulsed drain current: 484A Power dissipation: 22W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MMUN2133LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
NSVMMUN2133LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.4W
Collector-emitter voltage: 50V
Current gain: 80...140
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.4W
Collector-emitter voltage: 50V
Current gain: 80...140
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
VEONSVMMUN2133LT1G |
auf Bestellung 993000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.02 EUR |
NCP1203P60G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Produkt ist nicht verfügbar
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Stück im Wert von UAH
2SB1201S-TL-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ4684T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 7.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 7.5µA
auf Bestellung 5655 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
650+ | 0.11 EUR |
1009+ | 0.071 EUR |
1226+ | 0.058 EUR |
2017+ | 0.035 EUR |
2223+ | 0.032 EUR |
FDPF320N06L |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Pulsed drain current: 84A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Pulsed drain current: 84A
Produkt ist nicht verfügbar
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NLSX4401MU1TCG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 24MHz
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 24MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MBRA140T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 2A
Max. forward voltage: 0.74V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 2A
Max. forward voltage: 0.74V
auf Bestellung 5809 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
323+ | 0.22 EUR |
397+ | 0.18 EUR |
618+ | 0.12 EUR |
650+ | 0.11 EUR |
TCA0372BDWR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.94 EUR |
NRVUB1620CTRT4G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: D2PAK
Max. load current: 16A
Kind of package: reel; tape
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Reverse recovery time: 85ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: D2PAK
Max. load current: 16A
Kind of package: reel; tape
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Reverse recovery time: 85ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR745G |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.57V
Max. load current: 7.5A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.57V
Max. load current: 7.5A
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
72+ | 1 EUR |
91+ | 0.79 EUR |
106+ | 0.67 EUR |
113+ | 0.64 EUR |
NTTFS020N06CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NVTFS020N06CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NVTFWS020N06CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MUR820G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
auf Bestellung 713 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
66+ | 1.09 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
SZBZX84C2V4ET1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZBZX84C2V4LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
50C02CH-TL-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; CPH3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: CPH3
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; CPH3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: CPH3
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
158+ | 0.45 EUR |
181+ | 0.4 EUR |
208+ | 0.34 EUR |
257+ | 0.27 EUR |
MMSZ4702T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
auf Bestellung 6463 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
529+ | 0.14 EUR |
834+ | 0.086 EUR |
1034+ | 0.069 EUR |
1232+ | 0.058 EUR |
1471+ | 0.049 EUR |
1846+ | 0.039 EUR |
2193+ | 0.033 EUR |
2674+ | 0.027 EUR |
2825+ | 0.025 EUR |
SZMMSZ4702T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ4696T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Produkt ist nicht verfügbar
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SZMMSZ4696T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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1N5934BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: bulk
auf Bestellung 1063 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
169+ | 0.42 EUR |
196+ | 0.37 EUR |
353+ | 0.2 EUR |
374+ | 0.19 EUR |
1N5934BRLG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1SMA5934BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Manufacturer series: 1SMA59xxBT3G
Case: SMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Manufacturer series: 1SMA59xxBT3G
Case: SMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBZ5248BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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MMBZ5248ELT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Produkt ist nicht verfügbar
Im Einkaufswagen
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SZMMBZ5248BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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SZMMBZ5248ELT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Produkt ist nicht verfügbar
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MC74LVX4053DR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Mounting: SMD
Manufacturer series: LVX
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Mounting: SMD
Manufacturer series: LVX
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Produkt ist nicht verfügbar
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MC74LVX4053DTG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Mounting: SMD
Manufacturer series: LVX
Kind of package: tube
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP16
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Mounting: SMD
Manufacturer series: LVX
Kind of package: tube
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP16
Produkt ist nicht verfügbar
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MC74LVX4053DTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Mounting: SMD
Manufacturer series: LVX
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP16
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Mounting: SMD
Manufacturer series: LVX
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP16
Produkt ist nicht verfügbar
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HUF76423P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Drain current: 23A
Drain-source voltage: 60V
Power dissipation: 85W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 23A; 85W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Drain current: 23A
Drain-source voltage: 60V
Power dissipation: 85W
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
HUF76429S3ST |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB
Kind of channel: enhancement
Mounting: SMD
Case: TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 25mΩ
Gate-source voltage: ±16V
Drain current: 44A
Drain-source voltage: 60V
Power dissipation: 110W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB
Kind of channel: enhancement
Mounting: SMD
Case: TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 25mΩ
Gate-source voltage: ±16V
Drain current: 44A
Drain-source voltage: 60V
Power dissipation: 110W
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NCS21671DM100R2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 35kHz; Micro10; 100V/V; 0.01mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 35kHz
Mounting: SMT
Case: Micro10
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Gain: 100V/V
Input offset voltage: 10µV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 35kHz; Micro10; 100V/V; 0.01mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 35kHz
Mounting: SMT
Case: Micro10
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Gain: 100V/V
Input offset voltage: 10µV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Number of channels: single
Produkt ist nicht verfügbar
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FDN5630 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Case: SuperSOT-3
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Drain current: 1.7A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Case: SuperSOT-3
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Drain current: 1.7A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
auf Bestellung 3302 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
165+ | 0.43 EUR |
220+ | 0.33 EUR |
358+ | 0.2 EUR |
376+ | 0.19 EUR |
1000+ | 0.18 EUR |
MOC3052M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC3052M
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC3052M
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
73+ | 0.97 EUR |
KSC5502DTM |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 87.83W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 87.83W
Case: DPAK
Pulsed collector current: 4A
Current gain: 12...30
Mounting: SMD
Kind of package: reel; tape
Frequency: 11MHz
Features of semiconductor devices: integrated anti-parallel diode
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 87.83W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 87.83W
Case: DPAK
Pulsed collector current: 4A
Current gain: 12...30
Mounting: SMD
Kind of package: reel; tape
Frequency: 11MHz
Features of semiconductor devices: integrated anti-parallel diode
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KSC5502TU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Current gain: 12...30
Mounting: THT
Kind of package: tube
Pulsed collector current: 4A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Current gain: 12...30
Mounting: THT
Kind of package: tube
Pulsed collector current: 4A
Produkt ist nicht verfügbar
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MC79L24ABPG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Produkt ist nicht verfügbar
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MC79L24ACPG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Produkt ist nicht verfügbar
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MC79L24ACPRMG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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MC79L24ACPRPG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -24V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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NXH008T120M3F2PTHG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 127A
Case: PIM29
Topology: 3-level inverter TNPC
Electrical mounting: Press-in PCB
On-state resistance: 15mΩ
Pulsed drain current: 387A
Power dissipation: 371W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 127A
Case: PIM29
Topology: 3-level inverter TNPC
Electrical mounting: Press-in PCB
On-state resistance: 15mΩ
Pulsed drain current: 387A
Power dissipation: 371W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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NXH011T120M3F2PTHG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 91A
Case: PIM29
Topology: 3-level inverter TNPC
Electrical mounting: Press-in PCB
On-state resistance: 28.1mΩ
Pulsed drain current: 273A
Power dissipation: 272W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 91A
Case: PIM29
Topology: 3-level inverter TNPC
Electrical mounting: Press-in PCB
On-state resistance: 28.1mΩ
Pulsed drain current: 273A
Power dissipation: 272W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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BAV99LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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SBAV99LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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FDMA430NZ |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N5231BTR |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
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LM2575T-3.3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Mounting: THT
Kind of package: tube
Case: TO220-5
Frequency: 42...63kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: 1A
Number of channels: 1
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Mounting: THT
Kind of package: tube
Case: TO220-5
Frequency: 42...63kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: 1A
Number of channels: 1
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
32+ | 2.29 EUR |
33+ | 2.19 EUR |
34+ | 2.16 EUR |
35+ | 2.07 EUR |
LM2575TV-ADJG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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MMSZ5248B |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMBD1204 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Case: SOT23
Capacitance: 2pF
Reverse recovery time: 4ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Type of diode: switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Case: SOT23
Capacitance: 2pF
Reverse recovery time: 4ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Type of diode: switching
Mounting: SMD
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
360+ | 0.2 EUR |
545+ | 0.13 EUR |
655+ | 0.11 EUR |
1155+ | 0.062 EUR |
1220+ | 0.059 EUR |
NVTFWS9D6P04M8LTAG |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -64A; Idm: -311A; 38W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -64A
Pulsed drain current: -311A
Power dissipation: 38W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -64A; Idm: -311A; 38W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -64A
Pulsed drain current: -311A
Power dissipation: 38W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H888NWFTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 47A
Power dissipation: 9.2W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 47A
Power dissipation: 9.2W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5C466NLWFTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 51A; Idm: 214A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 214A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 51A; Idm: 214A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 214A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5C673NLTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H850NTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 68A
Pulsed drain current: 300A
Power dissipation: 53W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 68A
Pulsed drain current: 300A
Power dissipation: 53W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS003N04CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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