| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NSV60200DMTWTBG | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 60V; 2A; 2.27W; WDFN6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 2.27W Case: WDFN6 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 155MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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NLV14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 30µA Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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| VALSBAW56LT1G | ONSEMI |
Category: Unclassified Description: VALSBAW56LT1G |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC240DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; AC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: reel; tape Quiescent current: 80µA Manufacturer series: AC |
Produkt ist nicht verfügbar |
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| MC74AC240DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
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MMBT3906 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NLU2G04MUTCG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA Type of integrated circuit: digital Mounting: SMD Case: uDFN6 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Technology: CMOS Number of channels: dual; 2 Kind of gate: NOT Quiescent current: 40µA Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NLU2G04AMUTCG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA Type of integrated circuit: digital Mounting: SMD Case: uDFN6 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Technology: CMOS Number of channels: dual; 2 Kind of gate: NOT Quiescent current: 40µA Number of inputs: 1 |
Produkt ist nicht verfügbar |
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| NLX2G04AMUTCG | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; MiniGate Type of integrated circuit: digital Mounting: SMD Case: uDFN6 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Family: NLX Kind of package: reel; tape Technology: CMOS Number of channels: 2 Kind of integrated circuit: inverter Manufacturer series: MiniGate Kind of gate: NOT Number of inputs: 1 |
Produkt ist nicht verfügbar |
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| FCH125N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247 Polarisation: unipolar Gate charge: 75nC On-state resistance: 0.102Ω Drain current: 18A Gate-source voltage: ±20V Power dissipation: 278W Pulsed drain current: 87A Case: TO247 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCP125N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3 Polarisation: unipolar Gate charge: 75nC On-state resistance: 0.125Ω Drain current: 29A Gate-source voltage: ±20V Power dissipation: 278W Pulsed drain current: 87A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTP125N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3 Polarisation: unipolar Gate charge: 37.3nC On-state resistance: 0.125Ω Drain current: 22A Gate-source voltage: ±30V Power dissipation: 152W Pulsed drain current: 77A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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ADP3120AJRZ-RL | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Number of channels: 2 Supply voltage: 4.6...13.2V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -20...150°C Impulse rise time: 20ns Pulse fall time: 11ns Kind of package: reel; tape Protection: overheating OTP; undervoltage UVP Voltage class: 35V |
auf Bestellung 739 Stücke: Lieferzeit 14-21 Tag (e) |
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FNB41560 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAA-A26 Output current: 15A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 34W Collector-emitter voltage: 600V |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16XV2T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 10666 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU8K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS3672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2456 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB13AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 761 Stücke: Lieferzeit 14-21 Tag (e) |
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| FFSD10120A | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 22A Semiconductor structure: single diode Max. forward voltage: 1.75V Kind of package: reel; tape Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FSBB15CH120D | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; DIP; 15A; 1.2kV; 20kHz Type of integrated circuit: driver Case: DIP Output current: 15A Mounting: THT Frequency: 20kHz Output voltage: 1.2kV |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP160AFCS280T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 2.8V Output current: 0.25A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP160 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP161AFCS280T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 2.8V Output current: 0.45A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP161 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DTA124EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 60...100 Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTMFSC004N08MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8 Case: DFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 43.4nC On-state resistance: 4mΩ Power dissipation: 127W Drain current: 136A Pulsed drain current: 487A Gate-source voltage: ±20V Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FQP24N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 25nC On-state resistance: 60mΩ Power dissipation: 75W Drain current: 17A Pulsed drain current: 96A Gate-source voltage: ±25V Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FDMS4D4N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56 Case: Power56 Kind of channel: enhancement Technology: PowerTrench® Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 56nC On-state resistance: 7.2mΩ Power dissipation: 125W Drain current: 78A Pulsed drain current: 498A Gate-source voltage: ±20V Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LC709205FXE-01TBG | ONSEMI |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po Kind of integrated circuit: battery charging controller Mounting: SMD Interface: I2C Type of integrated circuit: PMIC Kind of package: reel; tape Case: WLCSP12 Operating temperature: -40...85°C Supply voltage: 2.5...5V DC Number of rechargeable batteries: 1 x Li-Ion / Li-Po |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FSL206MRLX | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.6A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: LSOP8 Mounting: SMD Operating temperature: -40...115°C Input voltage: 85...265V On-state resistance: 19Ω Duty cycle factor: 66...78% Power: 7W Application: SMPS Operating voltage: 7...24.5V DC |
Produkt ist nicht verfügbar |
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| MOC3042SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MOC3042VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| GBPC1204 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.4kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
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| GBPC12005 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 50V Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
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| GBPC1201W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 100V Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: wire Ø 1.0mm Case: GBPC-W Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
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| GBPC1206W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.6kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: wire Ø 1.0mm Case: GBPC-W Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
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| GBPC1201 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 100V Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
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| GBPC1206 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.6kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: connectors FASTON Case: GBPC Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
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| GBPC1208W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A Max. forward voltage: 1.1V Max. off-state voltage: 0.8kV Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Leads: wire Ø 1.0mm Case: GBPC-W Version: square Type of bridge rectifier: single-phase Electrical mounting: THT |
Produkt ist nicht verfügbar |
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MOC3082M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323 Mounting: SMD Kind of package: reel; tape Case: SC70; SOT323 Power dissipation: 0.2W Drain current: 0.115A On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
auf Bestellung 1470 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2138LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ |
auf Bestellung 3640 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5138T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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| MUN5238T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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| MBRB1545CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: reel; tape Max. forward impulse current: 150A Max. load current: 15A |
Produkt ist nicht verfügbar |
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| SBRB1545CTG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: tube Max. forward impulse current: 150A Max. load current: 15A |
Produkt ist nicht verfügbar |
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MMBTA92 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MSQA6V1W5T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.1...7.2V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 3V Number of channels: 4 Kind of package: reel; tape Application: universal |
Produkt ist nicht verfügbar |
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 |
FQB8P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.7A Pulsed drain current: -32A Power dissipation: 65W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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 |
FQD8P10TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Pulsed drain current: -26.4A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| 2SD1628G-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 280...560 Polarisation: bipolar Frequency: 120MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 5A Collector-emitter voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 2SD1620-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 140 Polarisation: bipolar Frequency: 200MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 3A Collector-emitter voltage: 10V |
Produkt ist nicht verfügbar |
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| 2SD1623S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 140...280 Polarisation: bipolar Frequency: 150MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 2SD1623T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Kind of package: reel; tape Current gain: 200...400 Polarisation: bipolar Frequency: 150MHz Type of transistor: NPN Mounting: SMD Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGD3245G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD Case: DPAK Version: ESD Type of transistor: IGBT Application: ignition systems Kind of package: reel; tape Features of semiconductor devices: logic level Mounting: SMD Gate charge: 23nC Gate-emitter voltage: ±10V Collector current: 23A Power dissipation: 150W Collector-emitter voltage: 450V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
FDD2670 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.6A Pulsed drain current: 20A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 275mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NCS20166SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Integrated circuit features: precision; rail-to-rail Mounting: SMT Number of channels: single Case: SOT23-5 Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 0.55mV Slew rate: 6V/μs Bandwidth: 10MHz Voltage supply range: 3...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV20166SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Integrated circuit features: low noise Mounting: SMT Number of channels: single Case: SOT23-5 Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 0.55mV Slew rate: 6V/μs Bandwidth: 10MHz Voltage supply range: 3...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| STZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NSV60200DMTWTBG |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 2A; 2.27W; WDFN6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2.27W
Case: WDFN6
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 2A; 2.27W; WDFN6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2.27W
Case: WDFN6
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLV14106BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VALSBAW56LT1G |
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9000+ | 0.014 EUR |
| MC74AC240DTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC240DWR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT3906 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLU2G04MUTCG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLU2G04AMUTCG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLX2G04AMUTCG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; MiniGate
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Family: NLX
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Manufacturer series: MiniGate
Kind of gate: NOT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; MiniGate
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Family: NLX
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Manufacturer series: MiniGate
Kind of gate: NOT
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH125N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP125N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP125N60S5H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ADP3120AJRZ-RL |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 110+ | 0.65 EUR |
| 124+ | 0.58 EUR |
| 135+ | 0.53 EUR |
| 500+ | 0.47 EUR |
| FNB41560 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.02 EUR |
| 12+ | 16.09 EUR |
| 24+ | 13.87 EUR |
| SBAS16XV2T5G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 10666 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 340+ | 0.21 EUR |
| 455+ | 0.16 EUR |
| 535+ | 0.13 EUR |
| 590+ | 0.12 EUR |
| 8000+ | 0.11 EUR |
| GBU8K |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |
| 46+ | 1.57 EUR |
| 52+ | 1.39 EUR |
| 100+ | 1.24 EUR |
| FDS3672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2456 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 56+ | 1.29 EUR |
| 61+ | 1.17 EUR |
| 76+ | 0.94 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.8 EUR |
| FDB13AN06A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 46+ | 1.57 EUR |
| FFSD10120A |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
Technology: SiC
Produkt ist nicht verfügbar
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| FSBB15CH120D |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; DIP; 15A; 1.2kV; 20kHz
Type of integrated circuit: driver
Case: DIP
Output current: 15A
Mounting: THT
Frequency: 20kHz
Output voltage: 1.2kV
Category: Motor and PWM drivers
Description: IC: driver; DIP; 15A; 1.2kV; 20kHz
Type of integrated circuit: driver
Case: DIP
Output current: 15A
Mounting: THT
Frequency: 20kHz
Output voltage: 1.2kV
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 31.79 EUR |
| 20+ | 28.61 EUR |
| NCP160AFCS280T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCP161AFCS280T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA124EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTMFSC004N08MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 43.4nC
On-state resistance: 4mΩ
Power dissipation: 127W
Drain current: 136A
Pulsed drain current: 487A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 43.4nC
On-state resistance: 4mΩ
Power dissipation: 127W
Drain current: 136A
Pulsed drain current: 487A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP24N08 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 60mΩ
Power dissipation: 75W
Drain current: 17A
Pulsed drain current: 96A
Gate-source voltage: ±25V
Drain-source voltage: 80V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 60mΩ
Power dissipation: 75W
Drain current: 17A
Pulsed drain current: 96A
Gate-source voltage: ±25V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS4D4N08C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Case: Power56
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 7.2mΩ
Power dissipation: 125W
Drain current: 78A
Pulsed drain current: 498A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Case: Power56
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 7.2mΩ
Power dissipation: 125W
Drain current: 78A
Pulsed drain current: 498A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LC709205FXE-01TBG |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FSL206MRLX |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...115°C
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 66...78%
Power: 7W
Application: SMPS
Operating voltage: 7...24.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...115°C
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 66...78%
Power: 7W
Application: SMPS
Operating voltage: 7...24.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MOC3042TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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| GBPC1204 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.4kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.4kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
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| GBPC12005 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 50V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 50V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC1201W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
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| GBPC1206W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
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| GBPC1201 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
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| GBPC1206 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Produkt ist nicht verfügbar
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| GBPC1208W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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| MOC3082M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 2N7002W |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Power dissipation: 0.2W
Drain current: 0.115A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Power dissipation: 0.2W
Drain current: 0.115A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 296+ | 0.24 EUR |
| 455+ | 0.16 EUR |
| 544+ | 0.13 EUR |
| 758+ | 0.094 EUR |
| 1000+ | 0.084 EUR |
| MMUN2138LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
auf Bestellung 3640 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 1471+ | 0.049 EUR |
| 2253+ | 0.032 EUR |
| 2924+ | 0.024 EUR |
| 3226+ | 0.022 EUR |
| 3640+ | 0.02 EUR |
| MUN5138T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUN5238T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRB1545CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRB1545CTG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMBTA92 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSQA6V1W5T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB8P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD8P10TM-F085 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1628G-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2SD1620-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2SD1623S-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1623T-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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| FGD3245G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDD2670 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NCS20166SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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| NCV20166SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| STZD3155CT1G |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.079 EUR |