Technische Details FDD8876 ON Semiconductor
Description: MOSFET N-CH 30V 15A/73A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V.
Weitere Produktangebote FDD8876 nach Preis ab 0.81 EUR bis 3.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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FDD8876 | ON Semiconductor |
 Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 42500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8876 | onsemi |
Description: MOSFET N-CH 30V 15A/73A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8876 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 73A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2015 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8876 | ON Semiconductor |
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8876 | ON Semiconductor |
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8876 | onsemi / Fairchild |
MOSFET 30V N-Channel PowerTrench MOSFET |
auf Bestellung 35506 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8876 | onsemi |
Description: MOSFET N-CH 30V 15A/73A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
auf Bestellung 5055 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD8876 | FAIRCHILD |
07+ TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDD8876 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 42500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.96 EUR |
| 5000+ | 0.89 EUR |
| FDD8876 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 15A/73A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: MOSFET N-CH 30V 15A/73A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.11 EUR |
| FDD8876 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2015 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 69+ | 1.24 EUR |
| 73+ | 1.18 EUR |
| 77+ | 1.11 EUR |
| 100+ | 1.07 EUR |
| FDD8876 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 126+ | 1.38 EUR |
| 127+ | 1.36 EUR |
| 149+ | 1.13 EUR |
| 250+ | 1.09 EUR |
| 500+ | 0.9 EUR |
| FDD8876 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 1.64 EUR |
| 124+ | 1.36 EUR |
| 125+ | 1.3 EUR |
| 149+ | 1.05 EUR |
| 250+ | 1 EUR |
| 500+ | 0.81 EUR |
| FDD8876 |
|
Hersteller: onsemi / Fairchild
MOSFET 30V N-Channel PowerTrench MOSFET
MOSFET 30V N-Channel PowerTrench MOSFET
auf Bestellung 35506 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.12 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.34 EUR |
| 2500+ | 1.15 EUR |
| 5000+ | 1.12 EUR |
| FDD8876 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 15A/73A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: MOSFET N-CH 30V 15A/73A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 5055 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.23 EUR |
| FDD8876 |
|
Hersteller: FAIRCHILD
07+ TO-252
07+ TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)