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1N5343BRLG 1N5343BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
180+0.4 EUR
231+0.31 EUR
264+0.27 EUR
500+0.21 EUR
Mindestbestellmenge: 157
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1N5344BG 1N5344BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 738 Stücke:
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334+0.21 EUR
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1N5342BRLG 1N5342BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
182+0.39 EUR
198+0.36 EUR
229+0.31 EUR
257+0.28 EUR
304+0.24 EUR
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1N5342BRLG 1N5342BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
173+0.41 EUR
188+0.38 EUR
214+0.33 EUR
268+0.27 EUR
321+0.22 EUR
Mindestbestellmenge: 162
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1N5344BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5347BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5341BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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MMBT2369ALT1G MMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
527+0.14 EUR
772+0.093 EUR
923+0.078 EUR
1374+0.052 EUR
1603+0.045 EUR
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MMBT2369LT1G MMBT2369LT1G ONSEMI mmbt2369lt1-d.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC74HC1G14DFT1G
+1
 		MC74HC1G14DFT1G ONSEMI MC74HC1G14-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
auf Bestellung 3279 Stücke:
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625+0.11 EUR
715+0.1 EUR
847+0.085 EUR
940+0.076 EUR
1015+0.07 EUR
1053+0.068 EUR
3000+0.06 EUR
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MC74HC1G14DTT1G MC74HC1G14DTT1G ONSEMI MC74HC1G14-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
auf Bestellung 15 Stücke:
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15+4.76 EUR
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MC74HC1G14DBVT1G-Q ONSEMI mc74hc1g14-d.pdf Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DFT2G-Q ONSEMI mc74hc1g14-d.pdf Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DBVT1G ONSEMI mc74hc1g14-d.pdf Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DFT1G-Q ONSEMI mc74hc1g14-d.pdf Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DFT2G ONSEMI MC74HC1G14-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Produkt ist nicht verfügbar
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LM2575D2T-ADJR4G ONSEMI LM2575-ON-DTE.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC14503BDG MC14503BDG ONSEMI MC14503B-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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FCA36N60NF FCA36N60NF ONSEMI fca36n60nf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 104.7A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FJV1845FMTF ONSEMI FJV1845.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HUF75639P3 HUF75639P3 ONSEMI HUF75639P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
28+2.65 EUR
50+1.87 EUR
Mindestbestellmenge: 25
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NC7WZ02L8X-L22185 ONSEMI Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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FDWS9509L-F085 FDWS9509L-F085 ONSEMI fdws9509l-f085-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Produkt ist nicht verfügbar
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NCV274DTBR2G ONSEMI tlv271-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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NCV4274CDT33RKG ONSEMI ncv4274c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
Produkt ist nicht verfügbar
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NCV4274CDT50RKG ONSEMI ncv4274c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Produkt ist nicht verfügbar
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NCV4274ADT50RKG ONSEMI ncv4274-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Produkt ist nicht verfügbar
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NCV33274ADTBR2G ONSEMI mc33272a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 10V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Produkt ist nicht verfügbar
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FDMS86310 ONSEMI fdms86310-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NSVR0170HT1G NSVR0170HT1G ONSEMI NSVR0170HT1G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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RB751S40T1G RB751S40T1G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
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RB751S40T5G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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NSVRB751S40T5G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVRB751S40T1G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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M74VHC1GU04DTT1G M74VHC1GU04DTT1G ONSEMI MC74VHC1GU04-D.pdf Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: NOT
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
200+0.36 EUR
233+0.31 EUR
264+0.27 EUR
343+0.21 EUR
477+0.15 EUR
511+0.14 EUR
556+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 173
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MC74LCXU04DG MC74LCXU04DG ONSEMI MC74LCXU04-D.pdf Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Family: LCXU
Kind of integrated circuit: hex; inverter
Integrated circuit features: tolerates a voltage of 5V on the inputs
Kind of package: tube
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...3.6V DC
Technology: CMOS
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
110+0.65 EUR
141+0.51 EUR
171+0.42 EUR
181+0.4 EUR
Mindestbestellmenge: 68
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MJD41CRLG ONSEMI mjd41c-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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MJD41CT4G ONSEMI mjd41c-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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NJVMJD41CT4G ONSEMI mjd41c-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC100ELT25DG MC100ELT25DG ONSEMI MC100ELT25DG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Manufacturer series: 100ELT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of outputs: 1
Number of inputs: 2
Produkt ist nicht verfügbar
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MC100ELT23DTG MC100ELT23DTG ONSEMI MC100ELT23DG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Manufacturer series: 100ELT
Case: TSSOP8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of outputs: 2
Number of inputs: 4
Produkt ist nicht verfügbar
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BAS16HT3G ONSEMI bas16ht1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
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SBAS16HT3G SBAS16HT3G ONSEMI bas16ht1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR745G MBR745G ONSEMI MBR745G.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Case: TO220AC
Kind of package: tube
auf Bestellung 16 Stücke:
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16+4.46 EUR
Mindestbestellmenge: 16
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NSR201MXT5G ONSEMI nsr201mx-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Produkt ist nicht verfügbar
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FCH190N65F-F155 ONSEMI fch190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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NVB190N65S3F ONSEMI nvb190n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCP190N60E ONSEMI fcpf190n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCP190N65F ONSEMI fcp190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCP190N65S3 ONSEMI fcp190n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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FCP190N65S3R0 ONSEMI fcp190n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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NTB190N65S3HF ONSEMI ntb190n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTP190N65S3HF ONSEMI ntp190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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FCPF190N60E ONSEMI fcpf190n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 39W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCPF190N60 ONSEMI fcpf190n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.199Ω
Gate charge: 57nC
Power dissipation: 39W
Pulsed drain current: 60.6A
Produkt ist nicht verfügbar
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NTHL190N65S3HF ONSEMI nthl190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTMT190N65S3H ONSEMI ntmt190n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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NTMT190N65S3HF ONSEMI ntmt190n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTPF190N65S3H ONSEMI ntpf190n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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1N5343BRLG description 1N53xx.PDF
1N5343BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
180+0.4 EUR
231+0.31 EUR
264+0.27 EUR
500+0.21 EUR
Mindestbestellmenge: 157
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1N5344BG 1N53xx.PDF
1N5344BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 738 Stücke:
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Anzahl Preis
334+0.21 EUR
Mindestbestellmenge: 334
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1N5342BRLG description 1N53xx.PDF
1N5342BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
182+0.39 EUR
198+0.36 EUR
229+0.31 EUR
257+0.28 EUR
304+0.24 EUR
Mindestbestellmenge: 162
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1N5342BRLG description 1n5333b-d.pdf
1N5342BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
173+0.41 EUR
188+0.38 EUR
214+0.33 EUR
268+0.27 EUR
321+0.22 EUR
Mindestbestellmenge: 162
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1N5344BRLG description 1n5333b-d.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5347BRLG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5341BRLG description 1n5333b-d.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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MMBT2369ALT1G mmbt2369lt1-d.pdf
MMBT2369ALT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
527+0.14 EUR
772+0.093 EUR
923+0.078 EUR
1374+0.052 EUR
1603+0.045 EUR
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MMBT2369LT1G description mmbt2369lt1-d.pdf
MMBT2369LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G mmbt2369lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC74HC1G14DFT1G MC74HC1G14-D.pdf
MC74HC1G14DFT1G
+1
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
auf Bestellung 3279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
715+0.1 EUR
847+0.085 EUR
940+0.076 EUR
1015+0.07 EUR
1053+0.068 EUR
3000+0.06 EUR
Mindestbestellmenge: 625
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MC74HC1G14DTT1G MC74HC1G14-D.pdf
MC74HC1G14DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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MC74HC1G14DBVT1G-Q mc74hc1g14-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DFT2G-Q mc74hc1g14-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DBVT1G mc74hc1g14-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DFT1G-Q mc74hc1g14-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Produkt ist nicht verfügbar
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MC74HC1G14DFT2G MC74HC1G14-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Produkt ist nicht verfügbar
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LM2575D2T-ADJR4G LM2575-ON-DTE.PDF
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC14503BDG MC14503B-D.pdf
MC14503BDG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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FCA36N60NF fca36n60nf-d.pdf
FCA36N60NF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 104.7A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FJV1845FMTF FJV1845.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HUF75639P3 HUF75639P3.pdf
HUF75639P3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
28+2.65 EUR
50+1.87 EUR
Mindestbestellmenge: 25
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NC7WZ02L8X-L22185
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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FDWS9509L-F085 fdws9509l-f085-d.pdf
FDWS9509L-F085
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Produkt ist nicht verfügbar
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NCV274DTBR2G tlv271-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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NCV4274CDT33RKG ncv4274c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
Produkt ist nicht verfügbar
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NCV4274CDT50RKG ncv4274c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Produkt ist nicht verfügbar
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NCV4274ADT50RKG ncv4274-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Produkt ist nicht verfügbar
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NCV33274ADTBR2G mc33272a-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 10V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Produkt ist nicht verfügbar
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FDMS86310 fdms86310-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NSVR0170HT1G NSVR0170HT1G.PDF
NSVR0170HT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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RB751S40T1G rb751s40t1-d.pdf
RB751S40T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
RB751S40T5G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVRB751S40T5G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVRB751S40T1G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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M74VHC1GU04DTT1G MC74VHC1GU04-D.pdf
M74VHC1GU04DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: NOT
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
200+0.36 EUR
233+0.31 EUR
264+0.27 EUR
343+0.21 EUR
477+0.15 EUR
511+0.14 EUR
556+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 173
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MC74LCXU04DG MC74LCXU04-D.pdf
MC74LCXU04DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Family: LCXU
Kind of integrated circuit: hex; inverter
Integrated circuit features: tolerates a voltage of 5V on the inputs
Kind of package: tube
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...3.6V DC
Technology: CMOS
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
110+0.65 EUR
141+0.51 EUR
171+0.42 EUR
181+0.4 EUR
Mindestbestellmenge: 68
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MJD41CRLG mjd41c-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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MJD41CT4G mjd41c-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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NJVMJD41CT4G mjd41c-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC100ELT25DG MC100ELT25DG.pdf
MC100ELT25DG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Manufacturer series: 100ELT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of outputs: 1
Number of inputs: 2
Produkt ist nicht verfügbar
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MC100ELT23DTG MC100ELT23DG.pdf
MC100ELT23DTG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Manufacturer series: 100ELT
Case: TSSOP8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of outputs: 2
Number of inputs: 4
Produkt ist nicht verfügbar
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BAS16HT3G bas16ht1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
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SBAS16HT3G bas16ht1-d.pdf
SBAS16HT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR745G MBR745G.PDF
MBR745G
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Case: TO220AC
Kind of package: tube
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
NSR201MXT5G nsr201mx-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Produkt ist nicht verfügbar
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FCH190N65F-F155 fch190n65f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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NVB190N65S3F nvb190n65s3f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCP190N60E fcpf190n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCP190N65F fcp190n65f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCP190N65S3 fcp190n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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FCP190N65S3R0 fcp190n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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NTB190N65S3HF ntb190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTP190N65S3HF ntp190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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FCPF190N60E fcpf190n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 39W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCPF190N60 fcpf190n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.199Ω
Gate charge: 57nC
Power dissipation: 39W
Pulsed drain current: 60.6A
Produkt ist nicht verfügbar
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NTHL190N65S3HF nthl190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTMT190N65S3H ntmt190n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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NTMT190N65S3HF ntmt190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTPF190N65S3H ntpf190n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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