Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (142011) > Seite 2351 nach 2367

Wählen Sie Seite:   [  << Vorherige Seite ]  1 236 472 708 944 1180 1416 1652 1888 2124 2346 2347 2348 2349 2350 2351 2352 2353 2354 2355 2356 2360 2367  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FCP125N65S3 ONSEMI fcp125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF ONSEMI ntb095n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNSP2201MR6T1G ONSEMI nsp2201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DR2G MC74AC125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14512BDR2G MC14512BDR2G ONSEMI mc14512b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of integrated circuit: data selector
Mounting: SMD
Family: HEF4000B
Operating temperature: -40...85°C
Number of channels: 8
Number of inputs: 8
Case: SO16
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
158+0.45 EUR
177+0.4 EUR
204+0.35 EUR
250+0.33 EUR
500+0.31 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ12VALT1G MMBZ12VALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Version: ESD
Type of diode: TVS array
Application: universal
Leakage current: 0.2µA
Number of channels: 2
Max. forward impulse current: 2.35A
Tolerance: ±5%
Max. off-state voltage: 8.5V
Breakdown voltage: 12V
Peak pulse power dissipation: 40W
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
391+0.18 EUR
451+0.16 EUR
816+0.088 EUR
1250+0.057 EUR
1484+0.048 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
SM24T1G SM24T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: universal
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
266+0.27 EUR
463+0.15 EUR
848+0.084 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
MC33164P-3G MC33164P-3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: bulk
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU8KS GBU8KS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DED390E9DA0D2&compId=GBU8KS.pdf?ci_sign=5be7d17507c4e793bcd91beddc2ac6bee99fee43 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR460 MUR460 ONSEMI MUR4xx.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FPF2286UCX ONSEMI fpf2286ucx-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Active logical level: high; low
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Integrated circuit features: thermal protection
Case: WLCSP6
Operating temperature: -40...85°C
On-state resistance: 25mΩ
Number of channels: 1
Supply voltage: 2.8...23V DC
Output current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14023BDR2G MC14023BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N80 ONSEMI fdbl0150n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 172nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSL538APG ONSEMI FSL538HR-D.PDF Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSL538HPG ONSEMI fsl538hr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: CAN
Version: ESD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6K GBU6K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
62+1.16 EUR
68+1.06 EUR
73+0.99 EUR
100+0.92 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
2N6387G 2N6387G ONSEMI 2n6387-d.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Kind of package: tube
Kind of transistor: Darlington
Case: TO220AB
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 10A
Collector-emitter voltage: 60V
Polarisation: bipolar
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
NTGS3446T1G ONSEMI ntgs3446-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C15 ONSEMI BZX84Cxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP42AN15A0 FDP42AN15A0 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE927EA0BAB4259&compId=FDP42AN15A0.pdf?ci_sign=5d81b96fc7857dceb89bd617b8a3b0fff3a3e3ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.15 EUR
28+2.57 EUR
32+2.29 EUR
50+1.84 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NC7WZ126L8X ONSEMI nc7wz126-d.pdf FAIRS42897-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL27WZ126USG NL27WZ126USG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9D60C7&compId=NL27WZ126USG.pdf?ci_sign=29883c8b6fc18a847af57f0c13002720d62822b6 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; US8
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: US8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NLV17SZ126DFT2G ONSEMI nl17sz126-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 10uA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SC88A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ126L6X ONSEMI ONSM-S-A0003590303-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.08 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ126L6X-L22175 ONSEMI nc7sz126-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Kind of output: 3-state
Manufacturer series: 7SZ
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SIP6
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
1N5919BG 1N5919BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
187+0.38 EUR
218+0.33 EUR
278+0.26 EUR
410+0.17 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
1N5919BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMA1024NZ ONSEMI fdma1024nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDME1024NZT
+1
 		FDME1024NZT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF65B6CDE37E28&compId=FDME1024NZT.pdf?ci_sign=993439da7b8b4701a3a90bf24cfe129a96e3cdfa Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C024NT1G ONSEMI ntmfs4c024n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE371G ONSEMI mje371-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 40
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVR0240V2T1G ONSEMI nsr0240v2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVR0240HT1G ONSEMI nsr0240h-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.71V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVR0240V2T5G ONSEMI nsr0240v2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC377ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697D40D3&compId=MC74HC377A-D.pdf?ci_sign=146271d0ee93da0bec50375ad289faee64499db3 Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
US1JFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVUS1JFA NRVUS1JFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14001UBDR2G MC14001UBDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV4269CD150R2G ONSEMI ncv4269c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV4279CD150R2G ONSEMI ncv4279c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C75LT1G BZX84C75LT1G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
1042+0.069 EUR
2075+0.034 EUR
2748+0.026 EUR
2977+0.024 EUR
3106+0.023 EUR
12000+0.021 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2LT1G BZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
458+0.16 EUR
Mindestbestellmenge: 458
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C6V2LT1G SZBZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.086 EUR
1191+0.06 EUR
1993+0.036 EUR
2488+0.029 EUR
Mindestbestellmenge: 834
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2ET1G ONSEMI bzx84c2v4et1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C6V2ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C9V1LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C9V1ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C9V1LT1G SZBZX84C9V1LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS2D3P04M8LT1G ONSEMI nvmfs2d3p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS2D3P04M8LT1G ONSEMI nvmfs2d3p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS002N04CLTAG ONSEMI nttfs002n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS002N04CLTAG ONSEMI nvtfs002n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMT1D3N08B ONSEMI fdmt1d3n08b-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD6685 ONSEMI FDD6685-D.PDF 0fc61bbc6b400209eba76145944cf814.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJL4315OTU ONSEMI fjl4315-d.pdf FAIR-S-A0002366066-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD3N40TM FDD3N40TM ONSEMI FDU3N40-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDU3N40TU ONSEMI FAIRS46517-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3 fcp125n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF ntb095n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNSP2201MR6T1G nsp2201mr6-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DR2G mc74ac125-d.pdf
MC74AC125DR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14512BDR2G mc14512b-d.pdf
MC14512BDR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of integrated circuit: data selector
Mounting: SMD
Family: HEF4000B
Operating temperature: -40...85°C
Number of channels: 8
Number of inputs: 8
Case: SO16
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
158+0.45 EUR
177+0.4 EUR
204+0.35 EUR
250+0.33 EUR
500+0.31 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ12VALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ12VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Version: ESD
Type of diode: TVS array
Application: universal
Leakage current: 0.2µA
Number of channels: 2
Max. forward impulse current: 2.35A
Tolerance: ±5%
Max. off-state voltage: 8.5V
Breakdown voltage: 12V
Peak pulse power dissipation: 40W
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
391+0.18 EUR
451+0.16 EUR
816+0.088 EUR
1250+0.057 EUR
1484+0.048 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
SM24T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5
SM24T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: universal
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
266+0.27 EUR
463+0.15 EUR
848+0.084 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
MC33164P-3G description pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab
MC33164P-3G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: bulk
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU8KS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DED390E9DA0D2&compId=GBU8KS.pdf?ci_sign=5be7d17507c4e793bcd91beddc2ac6bee99fee43
GBU8KS
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR460 MUR4xx.PDF
MUR460
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FPF2286UCX fpf2286ucx-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Active logical level: high; low
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Integrated circuit features: thermal protection
Case: WLCSP6
Operating temperature: -40...85°C
On-state resistance: 25mΩ
Number of channels: 1
Supply voltage: 2.8...23V DC
Output current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14023BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14023BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N80 fdbl0150n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 172nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSL538APG FSL538HR-D.PDF
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSL538HPG fsl538hr-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP1105LT1G nup1105l-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: CAN
Version: ESD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNUP1105LT1G nup1105l-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6K
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
62+1.16 EUR
68+1.06 EUR
73+0.99 EUR
100+0.92 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
2N6387G 2n6387-d.pdf
2N6387G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Kind of package: tube
Kind of transistor: Darlington
Case: TO220AB
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 10A
Collector-emitter voltage: 60V
Polarisation: bipolar
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
NTGS3446T1G ntgs3446-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C15 BZX84Cxx.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP42AN15A0 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE927EA0BAB4259&compId=FDP42AN15A0.pdf?ci_sign=5d81b96fc7857dceb89bd617b8a3b0fff3a3e3ba
FDP42AN15A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
28+2.57 EUR
32+2.29 EUR
50+1.84 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NC7WZ126L8X nc7wz126-d.pdf FAIRS42897-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL27WZ126USG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9D60C7&compId=NL27WZ126USG.pdf?ci_sign=29883c8b6fc18a847af57f0c13002720d62822b6
NL27WZ126USG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; US8
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: US8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NLV17SZ126DFT2G nl17sz126-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 10uA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SC88A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ126L6X ONSM-S-A0003590303-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.08 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ126L6X-L22175 nc7sz126-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Kind of output: 3-state
Manufacturer series: 7SZ
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SIP6
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
1N5919BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5919BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
187+0.38 EUR
218+0.33 EUR
278+0.26 EUR
410+0.17 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
1N5919BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMA1024NZ fdma1024nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDME1024NZT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF65B6CDE37E28&compId=FDME1024NZT.pdf?ci_sign=993439da7b8b4701a3a90bf24cfe129a96e3cdfa
FDME1024NZT
+1
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C024NT1G ntmfs4c024n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE371G mje371-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 40
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVR0240V2T1G nsr0240v2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVR0240HT1G nsr0240h-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.71V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVR0240V2T5G nsr0240v2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC377ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697D40D3&compId=MC74HC377A-D.pdf?ci_sign=146271d0ee93da0bec50375ad289faee64499db3
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
US1JFA us1mfa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVUS1JFA us1mfa-d.pdf
NRVUS1JFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14001UBDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14001UBDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV4269CD150R2G ncv4269c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV4279CD150R2G ncv4279c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C75LT1G bzx84c2v4lt1-d.pdf
BZX84C75LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
1042+0.069 EUR
2075+0.034 EUR
2748+0.026 EUR
2977+0.024 EUR
3106+0.023 EUR
12000+0.021 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
458+0.16 EUR
Mindestbestellmenge: 458
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
1191+0.06 EUR
1993+0.036 EUR
2488+0.029 EUR
Mindestbestellmenge: 834
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2ET1G bzx84c2v4et1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2LT3G bzx84c2v4lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C6V2ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C9V1LT3G bzx84c2v4lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C9V1ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C9V1LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C9V1LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS2D3P04M8LT1G nvmfs2d3p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS2D3P04M8LT1G nvmfs2d3p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS002N04CLTAG nttfs002n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS002N04CLTAG nvtfs002n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMT1D3N08B fdmt1d3n08b-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD6685 FDD6685-D.PDF 0fc61bbc6b400209eba76145944cf814.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJL4315OTU fjl4315-d.pdf FAIR-S-A0002366066-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD3N40TM FDU3N40-D.pdf
FDD3N40TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDU3N40TU FAIRS46517-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 236 472 708 944 1180 1416 1652 1888 2124 2346 2347 2348 2349 2350 2351 2352 2353 2354 2355 2356 2360 2367  [ Nächste Seite >> ]