| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FSB50450US | ONSEMI |
 Category: Power switches - integrated circuitsDescription: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Mounting: SMD Operating voltage: 500V Type of integrated circuit: driver Power dissipation: 14W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FSB50250AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W Mounting: SMD Output current: 1.2A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 13.4W Operating temperature: -40...150°C Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 500V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FSB50250US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Mounting: SMD Type of integrated circuit: driver Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: PowerSMD Operating voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FSB50450AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W Mounting: SMD Operating temperature: -40...150°C Operating voltage: 500V Output current: 1.5A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FSB50825AB | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV Operating temperature: -40...150°C Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: DIP Operating voltage: 250V Mounting: THT Supply voltage: 150V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FSB50825AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W Operating temperature: -40...150°C Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 250V Mounting: SMD Supply voltage: 150V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FDD6637 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -35V Drain current: -55A Power dissipation: 57W Case: DPAK Gate-source voltage: ±25V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2301 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Mounting: SMD Case: WDFN6 Power dissipation: 3.3W Kind of package: reel; tape Pulsed drain current: -24A Gate charge: 12.8nC Polarisation: unipolar Drain current: -7.7A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 25mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MC74HC04ADR2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA Type of integrated circuit: digital Number of channels: 6 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V Family: HC Kind of integrated circuit: inverter Kind of output: push-pull Operating temperature: -55...125°C Quiescent current: 2µA Number of inputs: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape Case: TSOP6 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Semiconductor structure: unidirectional Type of diode: TVS array Version: ESD |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SNUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP59301DS30R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1 Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 3V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP59301DS28R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 2.8V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor Case: TO220 Mounting: THT Power dissipation: 75W Polarisation: N Technology: PowerTrench® Drain current: 30A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: N-MOSFET Gate-source voltage: 20V Semiconductor structure: single transistor On-state resistance: 40mΩ Reverse recovery time: 200ns |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MC33067PG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Mounting: THT Case: DIP16 Operating temperature: -40...85°C Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz Topology: flyback Manufacturer series: MC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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1SMB5924BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
auf Bestellung 2367 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape Mounting: SMD Case: SOD123 Kind of package: reel; tape Power dissipation: 0.5W Semiconductor structure: single diode Zener voltage: 9.1V Type of diode: Zener Tolerance: ±5% Manufacturer series: MMSZ52xxB |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5239BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MUR8100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns Max. off-state voltage: 1kV Max. load current: 16A Load current: 8A Case: TO220AC Mounting: THT Kind of package: tube Max. forward impulse current: 100A Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 100ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.5V Features of semiconductor devices: ultrafast switching |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3660S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±12V On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2578 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS3664S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS86163P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Mounting: SMD Power dissipation: 104W Gate charge: 59nC Polarisation: unipolar Technology: PowerTrench® Drain current: -50A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: PQFN8 On-state resistance: 36mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS8460 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS86252L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 12A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2419 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS8333L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 76A Pulsed drain current: 250A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 64nC |
auf Bestellung 2972 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 60A Power dissipation: 69W Gate charge: 63nC Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: Power56 On-state resistance: 11.8mΩ |
auf Bestellung 2922 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS86200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 36A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 78W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 103mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDMS86300 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 122A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDMS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 78W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDMS86104 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 73W Case: PQFN8 On-state resistance: 40mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDMS5352 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 131nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS86200DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS7608S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Mounting: SMD Power dissipation: 2.2/2.5W Gate charge: 24/30nC Polarisation: unipolar Drain current: 22/30A Kind of channel: enhancement Drain-source voltage: 30/30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20/±20V Kind of package: reel; tape Case: Power56 On-state resistance: 13.9/8.6mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS86263P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -4.4A Pulsed drain current: -70A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±25V On-state resistance: 64mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS3604S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 10.8/4mΩ Mounting: SMD Gate charge: 29/66nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Semiconductor structure: asymmetric |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS1D2N03DSD | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS86500L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 799A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16.5A Power dissipation: 31W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS86350 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Power dissipation: 156W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDMS86181 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 78A Power dissipation: 125W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS86252 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 69W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 96mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDMS86520 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 80A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS7694 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 27W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS0308AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Pulsed drain current: 100A Power dissipation: 50W Gate charge: 47nC Polarisation: unipolar Technology: PowerTrench® Drain current: 49A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 4mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDMS0312S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56 Pulsed drain current: 90A Power dissipation: 46W Gate charge: 46nC Polarisation: unipolar Technology: PowerTrench® Drain current: 42A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 6.2mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS8018 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56 On-state resistance: 2.7mΩ Mounting: SMD Pulsed drain current: 680A Power dissipation: 83W Gate charge: 61nC Polarisation: unipolar Drain current: 110A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS86550 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 148A Pulsed drain current: 1021A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhancement |
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 |
NC7WZ07P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC70-6 Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Quiescent current: 10µA |
auf Bestellung 5151 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SK3557-6-TB-E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
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| 2SK3557-7-TB-E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
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|
FDC5614P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6 Mounting: SMD Power dissipation: 1.6W Gate charge: 24nC Polarisation: unipolar Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: -3A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 0.19Ω |
auf Bestellung 552 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
1N5359BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 24V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
auf Bestellung 2780 Stücke: Lieferzeit 14-21 Tag (e) |
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|
|
1N5359BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 24V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
BCP54 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1.5A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1.5A Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W |
auf Bestellung 2035 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
GBU4M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| NDB5060L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3 Mounting: SMD Pulsed drain current: 78A Power dissipation: 68W Gate charge: 17nC Polarisation: unipolar Drain current: 26A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: reel; tape Case: D2PAK-3 On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
74VHC132MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Kind of input: with Schmitt trigger Family: VHC Operating temperature: -40...85°C Kind of package: reel; tape |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
74VHC132M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Kind of input: with Schmitt trigger Family: VHC Operating temperature: -40...85°C Quiescent current: 20µA Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FSB50450US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| FSB50250AS |
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Mounting: SMD
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Mounting: SMD
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| FSB50250US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50450AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| FSB50825AB |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
Mounting: THT
Supply voltage: 150V
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
Mounting: THT
Supply voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50825AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
Mounting: SMD
Supply voltage: 150V
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
Mounting: SMD
Supply voltage: 150V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| FDD6637 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2301 Stücke:
Lieferzeit 14-21 Tag (e)
| NTLJS2103PTBG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Mounting: SMD
Case: WDFN6
Power dissipation: 3.3W
Kind of package: reel; tape
Pulsed drain current: -24A
Gate charge: 12.8nC
Polarisation: unipolar
Drain current: -7.7A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Mounting: SMD
Case: WDFN6
Power dissipation: 3.3W
Kind of package: reel; tape
Pulsed drain current: -24A
Gate charge: 12.8nC
Polarisation: unipolar
Drain current: -7.7A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| MC74HC04ADR2G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V
Family: HC
Kind of integrated circuit: inverter
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V
Family: HC
Kind of integrated circuit: inverter
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS array
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS array
Version: ESD
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| SNUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NCP59301DS30R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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Stück im Wert von UAH
| NCP59301DS28R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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Im Einkaufswagen
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| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Case: TO220
Mounting: THT
Power dissipation: 75W
Polarisation: N
Technology: PowerTrench®
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Semiconductor structure: single transistor
On-state resistance: 40mΩ
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Case: TO220
Mounting: THT
Power dissipation: 75W
Polarisation: N
Technology: PowerTrench®
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Semiconductor structure: single transistor
On-state resistance: 40mΩ
Reverse recovery time: 200ns
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33067PG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
Produkt ist nicht verfügbar
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| 1SMB5924BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
auf Bestellung 2367 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ5239BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 9.1V
Type of diode: Zener
Tolerance: ±5%
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 9.1V
Type of diode: Zener
Tolerance: ±5%
Manufacturer series: MMSZ52xxB
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5239BTR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| MUR8100EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS3660S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2578 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS3664S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2937 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS86163P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Mounting: SMD
Power dissipation: 104W
Gate charge: 59nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 36mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Mounting: SMD
Power dissipation: 104W
Gate charge: 59nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 36mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8460 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS86252L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS8333L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 64nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 64nC
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS86520L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 69W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 11.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 69W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 11.8mΩ
auf Bestellung 2922 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS86200 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS2572 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86300 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS5672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86104 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS5352 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86200DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7608S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Mounting: SMD
Power dissipation: 2.2/2.5W
Gate charge: 24/30nC
Polarisation: unipolar
Drain current: 22/30A
Kind of channel: enhancement
Drain-source voltage: 30/30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 13.9/8.6mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Mounting: SMD
Power dissipation: 2.2/2.5W
Gate charge: 24/30nC
Polarisation: unipolar
Drain current: 22/30A
Kind of channel: enhancement
Drain-source voltage: 30/30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 13.9/8.6mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86263P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS3604S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS1D2N03DSD |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86500L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8622 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86350 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86181 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86252 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 69W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 69W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDMS86520 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS7694 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS0308AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDMS0312S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Pulsed drain current: 90A
Power dissipation: 46W
Gate charge: 46nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6.2mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Pulsed drain current: 90A
Power dissipation: 46W
Gate charge: 46nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6.2mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| FDMS8018 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
On-state resistance: 2.7mΩ
Mounting: SMD
Pulsed drain current: 680A
Power dissipation: 83W
Gate charge: 61nC
Polarisation: unipolar
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
On-state resistance: 2.7mΩ
Mounting: SMD
Pulsed drain current: 680A
Power dissipation: 83W
Gate charge: 61nC
Polarisation: unipolar
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDMS86550 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NC7WZ07P6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
auf Bestellung 5151 Stücke:
Lieferzeit 14-21 Tag (e)
| 2SK3557-6-TB-E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2SK3557-7-TB-E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDC5614P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 24nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: -3A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.19Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 24nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: -3A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.19Ω
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5359BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5359BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| BCP54 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)
| GBU4M |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| NDB5060L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Mounting: SMD
Pulsed drain current: 78A
Power dissipation: 68W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: reel; tape
Case: D2PAK-3
On-state resistance: 50mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Mounting: SMD
Pulsed drain current: 78A
Power dissipation: 68W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: reel; tape
Case: D2PAK-3
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 74VHC132MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Family: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Family: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| 74VHC132M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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