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MURS360T3G MURS360T3G ONSEMI MURS360T3G.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 3453 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
239+0.36 EUR
260+0.33 EUR
311+0.27 EUR
327+0.26 EUR
348+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
2500+0.21 EUR
Mindestbestellmenge: 200 Stücke
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MURS360BT3G MURS360BT3G ONSEMI murs360bt3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
auf Bestellung 772 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.8 EUR
139+0.61 EUR
168+0.51 EUR
215+0.39 EUR
244+0.35 EUR
253+0.33 EUR
264+0.32 EUR
Mindestbestellmenge: 107 Stücke
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KSA928AYTA KSA928AYTA ONSEMI KSA928A.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Current gain: 160...320
auf Bestellung 1777 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
256+0.33 EUR
302+0.29 EUR
353+0.24 EUR
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MURS120T3G MURS120T3G ONSEMI murs120t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.64 EUR
168+0.51 EUR
194+0.44 EUR
271+0.31 EUR
309+0.27 EUR
500+0.2 EUR
Mindestbestellmenge: 132 Stücke
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MURS260T3G MURS260T3G ONSEMI MURS260T3G.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
auf Bestellung 1291 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
269+0.32 EUR
317+0.27 EUR
321+0.26 EUR
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MURS480ET3G ONSEMI MURS480ET3G.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.46 EUR
74+1.15 EUR
79+1.09 EUR
84+1.02 EUR
100+0.99 EUR
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MURS220T3G MURS220T3G ONSEMI murs220t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
auf Bestellung 2297 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.75 EUR
162+0.52 EUR
191+0.44 EUR
278+0.31 EUR
323+0.26 EUR
394+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 114 Stücke
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TCA0372DWR2G ONSEMI tca0372-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TCA0372DWR2G ONSEMI tca0372-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.75 EUR
Mindestbestellmenge: 1000 Stücke
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DTA144TET1G ONSEMI DTA144T-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DTA144TM3T5G DTA144TM3T5G ONSEMI dta144t-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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DTA144WET1G ONSEMI dta144w-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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FDC3612 FDC3612 ONSEMI FDC3612.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
84+1.02 EUR
115+0.74 EUR
137+0.62 EUR
193+0.44 EUR
211+0.4 EUR
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NDS332P NDS332P ONSEMI NDS332P-D.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Mounting: SMD
Case: SuperSOT-3
Kind of package: reel; tape
Power dissipation: 0.5W
Gate charge: 5nC
Polarisation: unipolar
Features of semiconductor devices: logic level
Drain current: -1A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
auf Bestellung 1633 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.95 EUR
132+0.64 EUR
191+0.45 EUR
223+0.38 EUR
500+0.27 EUR
1000+0.25 EUR
1500+0.24 EUR
Mindestbestellmenge: 90 Stücke
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MBR60H100CTG MBR60H100CTG ONSEMI MBR60H100CTG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Max. forward impulse current: 350A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.57 EUR
27+3.24 EUR
33+2.65 EUR
Mindestbestellmenge: 24 Stücke
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MBR60L45CTG MBR60L45CTG ONSEMI MBR60L45CTG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Max. forward impulse current: 200A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Produkt ist nicht verfügbar
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MBR41H100CTG MBR41H100CTG ONSEMI mbr41h100ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.25 EUR
30+2.86 EUR
40+2.18 EUR
50+2.17 EUR
Mindestbestellmenge: 27 Stücke
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SS25 SS25 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SS25FA SS25FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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1N5225B 1N5225B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
auf Bestellung 4874 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.086 EUR
1389+0.061 EUR
1613+0.052 EUR
2488+0.035 EUR
2748+0.031 EUR
2942+0.029 EUR
3125+0.027 EUR
3247+0.026 EUR
Mindestbestellmenge: 1000 Stücke
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1N5228BTR 1N5228BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
auf Bestellung 44990 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
676+0.13 EUR
878+0.098 EUR
2165+0.039 EUR
2605+0.032 EUR
3049+0.027 EUR
Mindestbestellmenge: 500 Stücke
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1N5222B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5226BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5227B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5223B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5227BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5229BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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FOD3125 FOD3125 ONSEMI FOD3125.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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NTND31225CZTAG ONSEMI ntnd31225cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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NCP45560IMNTWG-H ONSEMI ncp45560-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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NCP45560IMNTWG-L ONSEMI ncp45560-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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FQD2N90TM FQD2N90TM ONSEMI fqu2n90tu_am002-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Mounting: SMD
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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FQU2N90TU-AM002 ONSEMI FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Produkt ist nicht verfügbar
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FQU2N90TU-WS ONSEMI fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Produkt ist nicht verfügbar
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NGTB35N65FL2WG NGTB35N65FL2WG ONSEMI ngtb35n65fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 35A
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 125nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
11+8.34 EUR
13+6.77 EUR
20+5.66 EUR
Mindestbestellmenge: 11 Stücke
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LM7301SN1T1G ONSEMI lm7301-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Input offset voltage: 6mV
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Voltage supply range: 1.8...32V DC
Kind of package: reel; tape
Input offset current: 55nA
Case: SOT23-5
Number of channels: single; 1
Bandwidth: 4MHz
Mounting: SMT
Produkt ist nicht verfügbar
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74VHC125MTCX 74VHC125MTCX ONSEMI 74VHC125-D.PDF description Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP14
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
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2SA2016-TD-E 2SA2016-TD-E ONSEMI 2SA2016-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector current: 7A
auf Bestellung 713 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.54 EUR
87+0.98 EUR
117+0.73 EUR
132+0.64 EUR
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2SA2012-TD-E 2SA2012-TD-E ONSEMI 2sa2012-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
auf Bestellung 15 Stücke:
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2SA2040-TL-E 2SA2040-TL-E ONSEMI 2SA2040-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
auf Bestellung 467 Stücke:
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50+1.71 EUR
78+1.09 EUR
109+0.79 EUR
Mindestbestellmenge: 50 Stücke
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2SA2153-TD-E 2SA2153-TD-E ONSEMI 2sa2153-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2013-TD-E 2SA2013-TD-E ONSEMI 2SA2013-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2029M3T5G 2SA2029M3T5G ONSEMI 2SA2029M3-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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2SA2039-TL-E 2SA2039-TL-E ONSEMI EN6912-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2125-TD-E 2SA2125-TD-E ONSEMI 2SA2125-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2125-TD-H 2SA2125-TD-H ONSEMI 2SA2125-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2126-TL-E 2SA2126-TL-E ONSEMI 2SA2126-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2202-TD-E 2SA2202-TD-E ONSEMI 2sa2202-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSV2SA2029M3T5G NSV2SA2029M3T5G ONSEMI 2sa2029m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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N24C08UVTG ONSEMI n24c02-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NTR0202PLT1G NTR0202PLT1G ONSEMI NTR0202PL.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Power dissipation: 0.225W
Gate charge: 2.18nC
Polarisation: unipolar
Drain current: -400mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.55Ω
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
576+0.14 EUR
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MJD31CG MJD31CG ONSEMI MJD31_MJD32.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
auf Bestellung 314 Stücke:
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50+1.71 EUR
72+1.2 EUR
133+0.64 EUR
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MJD31CT4G MJD31CT4G ONSEMI mjd31-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
74+1.15 EUR
114+0.75 EUR
137+0.62 EUR
173+0.49 EUR
193+0.44 EUR
Mindestbestellmenge: 74 Stücke
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MJD31CRLG MJD31CRLG ONSEMI mjd31-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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NJVMJD31CT4G NJVMJD31CT4G ONSEMI MJD31_MJD32.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD31CG NJVMJD31CG ONSEMI mjd31-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD31CRLG NJVMJD31CRLG ONSEMI mjd31-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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TL431ILPRAG TL431ILPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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MBR2H100SFT3G MBR2H100SFT3G ONSEMI mbr2h100sf-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1232 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.63 EUR
188+0.45 EUR
256+0.33 EUR
500+0.23 EUR
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BZX79C3V6 BZX79C3V6 ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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MURS360T3G MURS360T3G.PDF
MURS360T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 3453 Stücke:
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200+0.43 EUR
239+0.36 EUR
260+0.33 EUR
311+0.27 EUR
327+0.26 EUR
348+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
2500+0.21 EUR
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MURS360BT3G murs360bt3-d.pdf
MURS360BT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
auf Bestellung 772 Stücke:
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107+0.8 EUR
139+0.61 EUR
168+0.51 EUR
215+0.39 EUR
244+0.35 EUR
253+0.33 EUR
264+0.32 EUR
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KSA928AYTA KSA928A.PDF
KSA928AYTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Current gain: 160...320
auf Bestellung 1777 Stücke:
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200+0.43 EUR
256+0.33 EUR
302+0.29 EUR
353+0.24 EUR
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MURS120T3G murs120t3-d.pdf
MURS120T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 977 Stücke:
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132+0.64 EUR
168+0.51 EUR
194+0.44 EUR
271+0.31 EUR
309+0.27 EUR
500+0.2 EUR
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MURS260T3G MURS260T3G.PDF
MURS260T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
auf Bestellung 1291 Stücke:
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179+0.48 EUR
269+0.32 EUR
317+0.27 EUR
321+0.26 EUR
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MURS480ET3G MURS480ET3G.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
auf Bestellung 2498 Stücke:
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59+1.46 EUR
74+1.15 EUR
79+1.09 EUR
84+1.02 EUR
100+0.99 EUR
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MURS220T3G murs220t3-d.pdf
MURS220T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
auf Bestellung 2297 Stücke:
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114+0.75 EUR
162+0.52 EUR
191+0.44 EUR
278+0.31 EUR
323+0.26 EUR
394+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
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TCA0372DWR2G tca0372-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
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TCA0372DWR2G tca0372-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
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1000+1.75 EUR
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DTA144TET1G DTA144T-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DTA144TM3T5G dta144t-d.pdf
DTA144TM3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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DTA144WET1G dta144w-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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FDC3612 FDC3612.PDF
FDC3612
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2780 Stücke:
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84+1.02 EUR
115+0.74 EUR
137+0.62 EUR
193+0.44 EUR
211+0.4 EUR
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NDS332P NDS332P-D.PDF
NDS332P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Mounting: SMD
Case: SuperSOT-3
Kind of package: reel; tape
Power dissipation: 0.5W
Gate charge: 5nC
Polarisation: unipolar
Features of semiconductor devices: logic level
Drain current: -1A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
auf Bestellung 1633 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
90+0.95 EUR
132+0.64 EUR
191+0.45 EUR
223+0.38 EUR
500+0.27 EUR
1000+0.25 EUR
1500+0.24 EUR
Mindestbestellmenge: 90 Stücke
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MBR60H100CTG MBR60H100CTG.PDF
MBR60H100CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Max. forward impulse current: 350A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.57 EUR
27+3.24 EUR
33+2.65 EUR
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MBR60L45CTG MBR60L45CTG.PDF
MBR60L45CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Max. forward impulse current: 200A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Produkt ist nicht verfügbar
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MBR41H100CTG mbr41h100ct-d.pdf
MBR41H100CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.25 EUR
30+2.86 EUR
40+2.18 EUR
50+2.17 EUR
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SS25 S210.pdf
SS25
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SS25FA ss29fa-d.pdf
SS25FA
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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1N5225B 1N52xxB.PDF
1N5225B
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
auf Bestellung 4874 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.086 EUR
1389+0.061 EUR
1613+0.052 EUR
2488+0.035 EUR
2748+0.031 EUR
2942+0.029 EUR
3125+0.027 EUR
3247+0.026 EUR
Mindestbestellmenge: 1000 Stücke
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1N5228BTR 1N52xxB.PDF
1N5228BTR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
auf Bestellung 44990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
676+0.13 EUR
878+0.098 EUR
2165+0.039 EUR
2605+0.032 EUR
3049+0.027 EUR
Mindestbestellmenge: 500 Stücke
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1N5222B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5226BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5227B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5223B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5227BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5229BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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FOD3125 FOD3125.pdf
FOD3125
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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NTND31225CZTAG ntnd31225cz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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NCP45560IMNTWG-H ncp45560-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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NCP45560IMNTWG-L ncp45560-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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FQD2N90TM fqu2n90tu_am002-d.pdf
FQD2N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Mounting: SMD
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FQU2N90TU-AM002 FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Produkt ist nicht verfügbar
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FQU2N90TU-WS fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Produkt ist nicht verfügbar
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NGTB35N65FL2WG ngtb35n65fl2w-d.pdf
NGTB35N65FL2WG
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 35A
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 125nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.34 EUR
13+6.77 EUR
20+5.66 EUR
Mindestbestellmenge: 11 Stücke
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LM7301SN1T1G lm7301-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Input offset voltage: 6mV
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Voltage supply range: 1.8...32V DC
Kind of package: reel; tape
Input offset current: 55nA
Case: SOT23-5
Number of channels: single; 1
Bandwidth: 4MHz
Mounting: SMT
Produkt ist nicht verfügbar
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74VHC125MTCX description 74VHC125-D.PDF
74VHC125MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP14
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2SA2016-TD-E 2SA2016-D.PDF
2SA2016-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector current: 7A
auf Bestellung 713 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
56+1.54 EUR
87+0.98 EUR
117+0.73 EUR
132+0.64 EUR
Mindestbestellmenge: 56 Stücke
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2SA2012-TD-E 2sa2012-d.pdf
2SA2012-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.66 EUR
Mindestbestellmenge: 15 Stücke
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2SA2040-TL-E 2SA2040-D.PDF
2SA2040-TL-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+1.71 EUR
78+1.09 EUR
109+0.79 EUR
Mindestbestellmenge: 50 Stücke
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2SA2153-TD-E 2sa2153-d.pdf
2SA2153-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2013-TD-E 2SA2013-D.PDF
2SA2013-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2029M3T5G 2SA2029M3-D.PDF
2SA2029M3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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2SA2039-TL-E EN6912-D.PDF
2SA2039-TL-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2125-TD-E 2SA2125-D.PDF
2SA2125-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2125-TD-H 2SA2125-D.PDF
2SA2125-TD-H
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2126-TL-E 2SA2126-D.PDF
2SA2126-TL-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2SA2202-TD-E 2sa2202-d.pdf
2SA2202-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSV2SA2029M3T5G 2sa2029m3-d.pdf
NSV2SA2029M3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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N24C08UVTG n24c02-d.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NTR0202PLT1G NTR0202PL.PDF
NTR0202PLT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Power dissipation: 0.225W
Gate charge: 2.18nC
Polarisation: unipolar
Drain current: -400mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.55Ω
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
576+0.14 EUR
Mindestbestellmenge: 455 Stücke
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MJD31CG MJD31_MJD32.pdf
MJD31CG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+1.71 EUR
72+1.2 EUR
133+0.64 EUR
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MJD31CT4G mjd31-d.pdf
MJD31CT4G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
74+1.15 EUR
114+0.75 EUR
137+0.62 EUR
173+0.49 EUR
193+0.44 EUR
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MJD31CRLG mjd31-d.pdf
MJD31CRLG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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NJVMJD31CT4G MJD31_MJD32.pdf
NJVMJD31CT4G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD31CG mjd31-d.pdf
NJVMJD31CG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD31CRLG mjd31-d.pdf
NJVMJD31CRLG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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TL431ILPRAG tl431-d.pdf
TL431ILPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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MBR2H100SFT3G mbr2h100sf-d.pdf
MBR2H100SFT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1232 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
136+0.63 EUR
188+0.45 EUR
256+0.33 EUR
500+0.23 EUR
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BZX79C3V6 BZX79C.PDF
BZX79C3V6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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