FDMS7608S ON Semiconductor
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 204+ | 0.73 EUR |
| 207+ | 0.69 EUR |
| 211+ | 0.65 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS7608S ON Semiconductor
Description: MOSFET 2N-CH 30V 12A/15A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A, 15A, Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMS7608S nach Preis ab 0.53 EUR bis 1.94 EUR
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FDMS7608S | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 12A/15A 8-Pin DFN EP T/R |
auf Bestellung 2710 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS7608S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 12A/15A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 15A Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7608S | Hersteller : Fairchild Semiconductor |
Description: MOSFET 2N-CH 30V 12A/15A POWER56 Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 15A Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 1290 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7608S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 12A/15A 8-Pin DFN EP T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS7608S | Hersteller : onsemi / Fairchild |
MOSFETs PT7 Nch 30/20V & PT8 Nch 30/20V |
auf Bestellung 9619 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7608S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 12A/15A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 15A Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 26301 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7608S | Hersteller : ONSEMI |
Description: ONSEMI - FDMS7608S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS7608S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 12A/15A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS7608S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 12A/15A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS7608S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS7608S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |