FDMS3660S onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.46 EUR |
6000+ | 1.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS3660S onsemi
Description: ONSEMI - FDMS3660S - Dual-MOSFET, n-Kanal, 30 V, 30 V, 60 A, 60 A, 0.0013 ohm, tariffCode: 85412900, rohsCompliant: Y-EX, Dauer-Drainstrom Id, p-Kanal: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 60A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0013ohm, Verlustleistung, p-Kanal: 2.5W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Anzahl der Pins: 8Pins, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0013ohm, productTraceability: Yes-Date/Lot Code, Verlustleistung, n-Kanal: 2.5W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote FDMS3660S nach Preis ab 1.52 EUR bis 3.82 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMS3660S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±12V On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2644 Stücke: Lieferzeit 7-14 Tag (e) |
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FDMS3660S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±12V On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2644 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3660S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 30A/60A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 60A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 8493 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3660S | Hersteller : onsemi / Fairchild | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 10964 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS3660S | Hersteller : ONSEMI |
Description: ONSEMI - FDMS3660S - Dual-MOSFET, n-Kanal, 30 V, 30 V, 60 A, 60 A, 0.0013 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0013ohm Verlustleistung, p-Kanal: 2.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.0013ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 2.5W Betriebstemperatur, max.: 150°C |
auf Bestellung 5687 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3660S | Hersteller : ON Semiconductor |
auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS3660S Produktcode: 104042 |
IC > IC andere 8542399000 8542 39 90 00 |
Produkt ist nicht verfügbar
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FDMS3660S | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 13A/30A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS3660S | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 13A/30A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |