FDMS5672 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 10.6A/22A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details FDMS5672 onsemi
Description: MOSFET N-CH 60V 10.6A/22A 8MLP, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-MLP (5x6), Power56, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS5672 nach Preis ab 2.49 EUR bis 7.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FDMS5672 | ON Semiconductor |
Trans MOSFET N-CH Si 60V 10.6A 8-Pin WDFN EP T/R |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS5672 | ON Semiconductor |
Trans MOSFET N-CH Si 60V 10.6A 8-Pin WDFN EP T/R |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS5672 | onsemi / Fairchild |
MOSFETs 60V N-ChUltraFET PowerTrench MOSFET |
auf Bestellung 2537 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS5672 | onsemi |
Description: MOSFET N-CH 60V 10.6A/22A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-MLP (5x6), Power56 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS5672 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 10.6A 8-Pin WDFN EP T/R
Trans MOSFET N-CH Si 60V 10.6A 8-Pin WDFN EP T/R
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 4.09 EUR |
| 44+ | 3.23 EUR |
| 54+ | 2.49 EUR |
| FDMS5672 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 10.6A 8-Pin WDFN EP T/R
Trans MOSFET N-CH Si 60V 10.6A 8-Pin WDFN EP T/R
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 4.09 EUR |
| 44+ | 3.3 EUR |
| 54+ | 2.58 EUR |
| FDMS5672 |
|
Hersteller: onsemi / Fairchild
MOSFETs 60V N-ChUltraFET PowerTrench MOSFET
MOSFETs 60V N-ChUltraFET PowerTrench MOSFET
auf Bestellung 2537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.76 EUR |
| 10+ | 4.24 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.96 EUR |
| FDMS5672 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 10.6A/22A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 10.6A/22A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.09 EUR |
| 10+ | 4.7 EUR |
| 100+ | 3.34 EUR |
| 500+ | 3.12 EUR |