| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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1N3595TR | ONSEMI |
 Category: THT universal diodesDescription: Diode: switching; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
auf Bestellung 2966 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N3595 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 0.2A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 3µs Max. load current: 0.2A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| KA5M0365RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.4A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -40...85°C Topology: flyback; forward On-state resistance: 4.5Ω Duty cycle factor: 72...82% Kind of package: tube Power: 75W Operating voltage: 9...27V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP4328ASNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; TSOP5; 2.5÷40VDC Type of integrated circuit: PMIC Mounting: SMD Case: TSOP5 Operating temperature: -40...125°C Operating voltage: 2.5...40V DC Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP4328BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; TSOP6; 2.5÷40VDC Type of integrated circuit: PMIC Mounting: SMD Case: TSOP6 Operating temperature: -40...125°C Operating voltage: 2.5...40V DC Number of channels: 1 Frequency: 1kHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MC74AC74DR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: positive-edge-triggered Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC74AC74DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: positive-edge-triggered Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 2398 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: WQFN10 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N6520TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Kind of package: Ammo Pack Mounting: THT Collector-emitter voltage: 350V Power dissipation: 0.625W Polarisation: bipolar Type of transistor: PNP Current gain: 30...200 Case: TO92 Formed Frequency: 40...200MHz Collector current: 0.5A |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CAT24C02TDI-GT3A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: SOT23-5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NCP3063BDR2G | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 110...190kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 5...40V DC |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MBRB2545CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Mounting: SMD Max. forward voltage: 0.65V Max. off-state voltage: 45V Load current: 15A x2 Max. load current: 30A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: D2PAK Type of diode: Schottky rectifying |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MUR1540G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 200A; TO220-2; tube; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Max. load current: 30A Reverse recovery time: 60ns Heatsink thickness: 1.14...1.39mm |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MBRS1540T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape Mounting: SMD Max. forward voltage: 0.54V Max. off-state voltage: 40V Load current: 1.5A Max. load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQPF27P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQB27P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 545 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MJ15001G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 15A Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 2MHz Current gain: 25...150 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -40...85°C Technology: TTL Number of inputs: 8 Kind of package: reel; tape Case: SO16 Family: HEF4000B Kind of integrated circuit: data selector Number of channels: 8 Mounting: SMD |
auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FCPF16N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Technology: SJ-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CAT24C256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: uDFN8 Kind of interface: serial Access time: 40ns Operating temperature: -40...125°C Clock frequency: 1MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAV24C256WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SOIC8 Kind of interface: serial Access time: 400ns Operating temperature: -40...125°C Clock frequency: 1MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| CAV24C256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Access time: 400ns Operating temperature: -40...125°C Clock frequency: 1MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP1246BLD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Mounting: SMD Operating temperature: -40...125°C Output current: 500...800mA Type of integrated circuit: PMIC Case: SO7 Kind of integrated circuit: AC/DC switcher; PWM controller Number of channels: 1 Frequency: 58...72kHz Operating voltage: 8.9...26.5V DC Topology: flyback |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MC74HC165ADR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V Trigger: positive-edge-triggered Number of inputs: 9 Number of outputs: 1 Number of channels: 1 Delay time: 225ns Kind of output: complementary; push-pull Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC74HC165ADTR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V Trigger: positive-edge-triggered Number of inputs: 9 Number of outputs: 1 Number of channels: 1 Delay time: 225ns Kind of output: complementary; push-pull Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC74HC165AMN2TWG | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9 Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: QFN16 Family: HC Supply voltage: 2...6V Trigger: positive-edge-triggered Number of inputs: 9 Number of outputs: 1 Number of channels: 1 Kind of output: complementary; push-pull Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MC74HC165AMN2TWG-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: QFN16 Supply voltage: 4.5...5.5V Number of inputs: 9 Delay time: 225ns Kind of output: complementary Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FDS3590 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Mounting: SMD Polarisation: unipolar Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 86mΩ Power dissipation: 2.5W |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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KSC2383YTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 1894 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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KSC2383OTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 1068 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS86101 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS86101A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FDMS86101DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC14021BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous Number of channels: 1 Technology: CMOS Mounting: SMD Case: SO16 Family: HEF4000B Quiescent current: 600µA Kind of package: reel; tape Supply voltage: 3...18V DC Operating temperature: -55...125°C |
auf Bestellung 8813 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC14049BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 Kind of package: tube Supply voltage: 3...18V DC Operating temperature: -55...125°C |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC14082BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of gate: AND Type of integrated circuit: digital Technology: CMOS Number of inputs: 4 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: dual; 2 Delay time: 130ns Mounting: SMD |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC14025BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SO14 Family: HEF4000B Technology: CMOS Kind of package: tube Delay time: 130ns Supply voltage: 3...18V DC Operating temperature: -55...125°C |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC14013BDTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74ACT74DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Trigger: positive-edge-triggered |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74ACT74DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ES2D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 18pF |
auf Bestellung 1892 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ES2DAF | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC74HC164ADR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: parallel in Mounting: SMD Case: SOIC14 Family: HC Number of inputs: 2 Number of channels: 1 Delay time: 250ns Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC74HC164ADTR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: TSSOP14 Family: HC Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 Number of channels: 1 Delay time: 250ns Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC74HC164BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: SOIC14 Family: HC Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 Number of channels: 1 Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQP9N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF9N90CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Mounting: THT Pulsed drain current: 32A Power dissipation: 68W Gate charge: 58nC Polarisation: unipolar Drain current: 2.8A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 1.4Ω |
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| TL331SN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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| TL331VSN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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| TL331SN4T1G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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MBR0530 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BD13810STU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 63...160 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BD138G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
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MOC3163M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6 Case: DIP6 Number of channels: 1 Mounting: THT Slew rate: 1kV/μs Kind of output: zero voltage crossing driver Insulation voltage: 4.17kV Type of optocoupler: optotriac Output voltage: 600V Trigger current: 5mA Manufacturer series: MOC3163M |
auf Bestellung 992 Stücke: Lieferzeit 14-21 Tag (e) |
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MB2S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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LM301ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: single; 1 Mounting: SMT Voltage supply range: ± 5...15V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 10V/μs Input offset voltage: 7.5mV Input bias current: 0.25µA Input offset current: 50nA Kind of package: reel; tape |
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| FSB50450US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Mounting: SMD Operating voltage: 500V Type of integrated circuit: driver Power dissipation: 14W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1N3595TR |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
auf Bestellung 2966 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N3595 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Max. load current: 0.2A
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Max. load current: 0.2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| KA5M0365RYDTU |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| NCP4328ASNT1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCP4328BSNT1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
Frequency: 1kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
Frequency: 1kHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| MC74AC74DR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Produkt ist nicht verfügbar
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| MC74AC74DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 40µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| MC34072ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 2398 Stücke:
Lieferzeit 14-21 Tag (e)
| MC34072AMTTBG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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| MC34072VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2N6520TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Kind of package: Ammo Pack
Mounting: THT
Collector-emitter voltage: 350V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 30...200
Case: TO92 Formed
Frequency: 40...200MHz
Collector current: 0.5A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Kind of package: Ammo Pack
Mounting: THT
Collector-emitter voltage: 350V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 30...200
Case: TO92 Formed
Frequency: 40...200MHz
Collector current: 0.5A
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)
| CAT24C02TDI-GT3A |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCP3063BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...40V DC
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRB2545CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Mounting: SMD
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Mounting: SMD
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
| MUR1540G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 200A; TO220-2; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 200A; TO220-2; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRS1540T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Mounting: SMD
Max. forward voltage: 0.54V
Max. off-state voltage: 40V
Load current: 1.5A
Max. load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Mounting: SMD
Max. forward voltage: 0.54V
Max. off-state voltage: 40V
Load current: 1.5A
Max. load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
| FQPF27P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB27P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
| MJ15001G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Current gain: 25...150
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Current gain: 25...150
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14512BDR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 8
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: data selector
Number of channels: 8
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 8
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: data selector
Number of channels: 8
Mounting: SMD
auf Bestellung 2486 Stücke:
Lieferzeit 14-21 Tag (e)
| FCPF16N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Technology: SJ-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Technology: SJ-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C256YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| NV24C256MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 40ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 40ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C256WE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C256YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1246BLD065R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Mounting: SMD
Operating temperature: -40...125°C
Output current: 500...800mA
Type of integrated circuit: PMIC
Case: SO7
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Operating voltage: 8.9...26.5V DC
Topology: flyback
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Mounting: SMD
Operating temperature: -40...125°C
Output current: 500...800mA
Type of integrated circuit: PMIC
Case: SO7
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Operating voltage: 8.9...26.5V DC
Topology: flyback
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| MC74HC165ADR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165ADTR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165AMN2TWG |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165AMN2TWG-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Supply voltage: 4.5...5.5V
Number of inputs: 9
Delay time: 225ns
Kind of output: complementary
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Supply voltage: 4.5...5.5V
Number of inputs: 9
Delay time: 225ns
Kind of output: complementary
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS3590 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 86mΩ
Power dissipation: 2.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 86mΩ
Power dissipation: 2.5W
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
| KSC2383YTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1894 Stücke:
Lieferzeit 14-21 Tag (e)
| KSC2383OTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1068 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS86101 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86101A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86101DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2993 Stücke:
Lieferzeit 14-21 Tag (e)
| MC14021BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Quiescent current: 600µA
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Quiescent current: 600µA
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
auf Bestellung 8813 Stücke:
Lieferzeit 14-21 Tag (e)
| MC14049BDG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Kind of package: tube
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Kind of package: tube
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
| MC14082BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
Delay time: 130ns
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
Delay time: 130ns
Mounting: SMD
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
| MC14025BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of package: tube
Delay time: 130ns
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of package: tube
Delay time: 130ns
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| MC14013BDTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT74DG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74ACT74DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| ES2D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 18pF
auf Bestellung 1892 Stücke:
Lieferzeit 14-21 Tag (e)
| ES2DAF |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| MC74HC164ADR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Number of inputs: 2
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Number of inputs: 2
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
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| MC74HC164ADTR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
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| MC74HC164BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
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| FQP9N90C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| FQPF9N90CT |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Mounting: THT
Pulsed drain current: 32A
Power dissipation: 68W
Gate charge: 58nC
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 1.4Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Mounting: THT
Pulsed drain current: 32A
Power dissipation: 68W
Gate charge: 58nC
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 1.4Ω
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
| TL331SN4T3G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331VSN4T3G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331SN4T1G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| MBR0530 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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| BD13810STU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
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| BD138G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
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| MOC3163M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Output voltage: 600V
Trigger current: 5mA
Manufacturer series: MOC3163M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Output voltage: 600V
Trigger current: 5mA
Manufacturer series: MOC3163M
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
| MB2S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
| LM301ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
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| FSB50450US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
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Mindestbestellmenge: 450 Stücke
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