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| FCH041N60F-F085 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
Produkt ist nicht verfügbar |
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MC74HC153ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC Type of integrated circuit: digital Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 5 Technology: CMOS Manufacturer series: HC Family: HC Number of channels: 2 Kind of integrated circuit: data selector; multiplexer |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74HC153ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 5 Technology: CMOS Manufacturer series: HC Family: HC Number of channels: 2 Kind of integrated circuit: data selector; multiplexer |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC33164P-5G | ONSEMI |
 Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: THT Operating temperature: -40...125°C Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 50mA Supply voltage: 1...10V DC Threshold on-voltage: 4.33V Kind of package: bulk Case: TO92 Type of integrated circuit: supervisor circuit Number of channels: 1 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
auf Bestellung 1190 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33161DR2G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open collector DC supply current: 560µA Maximum output current: 20mA Supply voltage: 2...40V DC Threshold on-voltage: 1.27V Kind of package: reel; tape Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 2 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
auf Bestellung 688 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33172DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Bandwidth: 1.8MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: dual; 2 |
auf Bestellung 2155 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Mounting: SMD Operating temperature: -40...105°C Protection: over current OCP; short circuit protection SCP; undervoltage UVP Impulse rise time: 55ns Pulse fall time: 55ns Output voltage: 2...13.9V Supply voltage: 11...20V DC Output current: -2...1A Kind of package: reel; tape Case: SO8 Type of integrated circuit: driver Number of channels: 1 Kind of integrated circuit: IGBT gate driver Kind of output: inverting |
auf Bestellung 2158 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33171DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Bandwidth: 1.8MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: single; 1 |
auf Bestellung 658 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33161DG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open collector DC supply current: 560µA Maximum output current: 20mA Supply voltage: 2...40V DC Threshold on-voltage: 1.27V Kind of package: tube Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 2 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: THT Operating temperature: -40...85°C Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Supply voltage: 6.1...18V DC Output current: -1.5...1.5A Kind of package: tube Case: DIP8 Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Kind of output: non-inverting |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33164D-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 50mA Supply voltage: 1...10V DC Threshold on-voltage: 4.33V Kind of package: tube Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 1 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33164D-3G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 30mA Supply voltage: 1...10V DC Threshold on-voltage: 2.71V Kind of package: tube Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 1 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33153PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1 Mounting: SMD Operating temperature: -40...105°C Protection: over current OCP; short circuit protection SCP; undervoltage UVP Impulse rise time: 55ns Pulse fall time: 55ns Output voltage: 2...13.9V Supply voltage: 11...20V DC Output current: -2...1A Kind of package: tube Case: DIP8 Type of integrated circuit: driver Number of channels: 1 Topology: H-bridge Kind of integrated circuit: IGBT gate driver Kind of output: inverting |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: SMD Operating temperature: -40...85°C Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Supply voltage: 6.1...18V DC Output current: -1.5...1.5A Kind of package: reel; tape Case: SO8 Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Kind of output: non-inverting |
auf Bestellung 763 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: SMD Operating temperature: -40...85°C Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Supply voltage: 6.1...18V DC Output current: -1.5...1.5A Kind of package: tube Case: SO8 Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Kind of output: non-inverting |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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MC7815CD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Mounting: SMD Case: D2PAK Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Output voltage: 15V Output current: 1A Number of channels: 1 |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD20N06T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2477 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP020N06B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 313A Pulsed drain current: 1252A Power dissipation: 333W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 206nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDPF320N06L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 84A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NTTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTFWS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMYS020N08LHTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 30A Pulsed drain current: 142A Power dissipation: 21W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W Kind of package: tube Technology: SiC Mounting: THT Polarisation: unipolar Gate-source voltage: -10...19V Gate charge: 196nC On-state resistance: 28mΩ Power dissipation: 251W Drain current: 83A Pulsed drain current: 427A Drain-source voltage: 900V Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NVBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Kind of package: tube Technology: SiC Mounting: THT Polarisation: unipolar Gate-source voltage: -10...19V Gate charge: 78nC On-state resistance: 28mΩ Power dissipation: 251W Drain current: 83A Pulsed drain current: 472A Drain-source voltage: 900V Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| NVMYS021N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 131A Power dissipation: 9W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMYS021N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 131A Power dissipation: 9W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTHL023N065M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 49A Power dissipation: 131W Case: TO247-3 Gate-source voltage: -8...22V On-state resistance: 37mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 218A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTH4L023N065M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Power dissipation: 122W Case: TO247-4 Gate-source voltage: -8...22V On-state resistance: 37mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Pulsed drain current: 225A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBL023N065M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; 650V; 77A; 312W; H-PSOF8L Type of transistor: N-MOSFET Technology: SiC Drain-source voltage: 650V Drain current: 77A Power dissipation: 312W Case: H-PSOF8L Gate-source voltage: -8...22V Mounting: SMD Gate charge: 69nC Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD24N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2455 Stücke: Lieferzeit 14-21 Tag (e) |
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| NUP4202W1T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; SC88; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: bidirectional Mounting: SMD Case: SC88 Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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QRD1114 | ONSEMI |
Category: PCB Photoelectric Sensors Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C6V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 6.2V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 6.2V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C |
Produkt ist nicht verfügbar |
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| NCV47711PDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8 Kind of package: reel; tape Case: SO8 Mounting: SMD Output current: 0.35A Number of channels: 1 Output voltage: 5...20V Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FCH041N60F-F085 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC153ADR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC153ADTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33164P-5G | |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
auf Bestellung 1190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| MC33161DR2G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 85+ | 0.84 EUR |
| MC33172DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
auf Bestellung 2155 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 186+ | 0.39 EUR |
| 210+ | 0.34 EUR |
| 243+ | 0.29 EUR |
| 268+ | 0.27 EUR |
| 290+ | 0.25 EUR |
| 315+ | 0.23 EUR |
| 500+ | 0.22 EUR |
| MC33153DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
auf Bestellung 2158 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 41+ | 1.74 EUR |
| 45+ | 1.6 EUR |
| 50+ | 1.56 EUR |
| MC33171DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| MC33161DG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 81+ | 0.89 EUR |
| MC33152PG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.53 EUR |
| 53+ | 1.36 EUR |
| 59+ | 1.23 EUR |
| 63+ | 1.14 EUR |
| MC33164D-5G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 148+ | 0.48 EUR |
| 166+ | 0.43 EUR |
| MC33164D-3G | |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 30mA
Supply voltage: 1...10V DC
Threshold on-voltage: 2.71V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 30mA
Supply voltage: 1...10V DC
Threshold on-voltage: 2.71V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 122+ | 0.59 EUR |
| 137+ | 0.52 EUR |
| MC33153PG | |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 1
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 1
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 75+ | 0.96 EUR |
| 77+ | 0.93 EUR |
| MC33152DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 79+ | 0.92 EUR |
| 80+ | 0.9 EUR |
| MC33152DG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.3 EUR |
| MC7815CD2TR4G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 149+ | 0.48 EUR |
| NTD20N06T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.25 EUR |
| 39+ | 1.84 EUR |
| 44+ | 1.63 EUR |
| 62+ | 1.16 EUR |
| 100+ | 1.02 EUR |
| 200+ | 0.94 EUR |
| FDP020N06B-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 313A
Pulsed drain current: 1252A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 206nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 313A
Pulsed drain current: 1252A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 206nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTDV20N06T4G-VF01 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDPF320N06L |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS020N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS020N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFWS020N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS020N08LHTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 30A
Pulsed drain current: 142A
Power dissipation: 21W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 30A
Pulsed drain current: 142A
Power dissipation: 21W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| NTHL020N090SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 196nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 427A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 196nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 427A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NVBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| NVHL020N090SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 78nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 472A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 78nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 472A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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| NVMYS021N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Im Einkaufswagen
Stück im Wert von UAH
| NTMYS021N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Im Einkaufswagen
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| NTHL023N065M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Power dissipation: 131W
Case: TO247-3
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 218A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Power dissipation: 131W
Case: TO247-3
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 218A
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| NTH4L023N065M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 122W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 225A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 122W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 225A
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Stück im Wert von UAH
| NTBL023N065M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 77A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 77A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 77A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 77A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 13.33 EUR |
| NTD24N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 77+ | 0.93 EUR |
| 99+ | 0.73 EUR |
| 117+ | 0.62 EUR |
| 121+ | 0.59 EUR |
| 127+ | 0.57 EUR |
| 200+ | 0.55 EUR |
| NUP4202W1T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Number of channels: 4
Kind of package: reel; tape
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| QRD1114 | |
|
Hersteller: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 46+ | 1.57 EUR |
| BZX85C6V2 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.2V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.2V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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| NCV47711PDAJR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
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