| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FSL337LRN | ONSEMI |
 Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1 Operating voltage: 7...24.5V DC Case: DIP7 Mounting: THT Operating temperature: -40...125°C Application: SMPS Type of integrated circuit: PMIC Topology: buck; buck-boost; flyback Number of channels: 1 Output current: 1.8A On-state resistance: 4.75Ω Power: 9/20W Kind of integrated circuit: AC/DC switcher; PWM controller Duty cycle factor: 61...73% Input voltage: 85...265V Output voltage: 700V Frequency: 50kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NJL1302DG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5 Type of transistor: PNP + diode Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 200W Case: TO264-5 Pulsed collector current: 25A Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UJ4C075060K4S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 155W Case: TO247-4 Gate-source voltage: -25...25V On-state resistance: 147mΩ Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TS393DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB Type of integrated circuit: comparator Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -65...150°C Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 1pA Input bias current: 1pA Operating voltage: 2.7...16V Damping coefficient: 71dB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV2393DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB Type of integrated circuit: comparator Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -65...150°C Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 1pA Input bias current: 1pA Operating voltage: 2.7...16V Damping coefficient: 71dB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
NS5B1G385DFT2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL Mounting: SMD Kind of package: reel; tape Case: SC70 Kind of output: SPST-NO Technology: TTL Operating temperature: -40...85°C Number of outputs: 1 Number of channels: 1 Number of inputs: 2 Supply voltage: 2...5.5V DC Type of integrated circuit: analog switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
BD242CG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 25 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| NL27WZ17DFT2G-L22348 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 53754 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
| NL27WZ17DFT2G-Q | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
 |
FDS89161 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Technology: PowerTrench® Case: SO8 Polarisation: unipolar Gate charge: 4.1nC On-state resistance: 176mΩ Drain current: 2.7A Gate-source voltage: ±20V Power dissipation: 31W Drain-source voltage: 100V |
auf Bestellung 2192 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
FDS89161LZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Case: SO8 Polarisation: unipolar On-state resistance: 182mΩ Drain current: 2.7A Gate-source voltage: ±20V Power dissipation: 31W Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MCH6661-TL-W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.8A Power dissipation: 0.8W Case: MCPH6 Gate-source voltage: ±20V On-state resistance: 188mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
S3D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Capacitance: 60pF Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.6W |
auf Bestellung 2642 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| NCL30059BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter,LED driver; -1÷0.5A; SO8; SMD; 25÷250kHz Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Output current: -1...0.5A Case: SO8 Mounting: SMD Frequency: 25...250kHz Topology: resonant LLC Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 9...16V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP1079BAP130G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.05A Case: DIP8 Mounting: SMD Frequency: 117...143kHz Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 3.9Ω Operating voltage: 6.5...20V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP1079BBP065G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.05A Case: DIP8 Mounting: SMD Frequency: 59...71kHz Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 3.9Ω Operating voltage: 6.5...20V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP1589BMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC Type of integrated circuit: PMIC Output current: 1.5A Case: DFN10 Mounting: SMD Frequency: 540...660kHz Topology: buck Number of channels: 1 Operating temperature: 0...70°C Operating voltage: 4.5...13.2V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 1N5341BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVBAT54LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NST65011MW6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
|
FQP45N15V2 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
FQPF45N15V2 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Pulsed drain current: 180A Power dissipation: 66W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
PZTA92T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 2738 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| NSVPZTA92T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVPZTA92T3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
NUD3160DMT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74 Type of integrated circuit: power switch Kind of package: reel; tape Case: SC74 Mounting: SMD Output current: 0.2A On-state resistance: 1.8Ω Kind of integrated circuit: low-side Number of channels: 2 Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SZNUD3160DMT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
| NTB082N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: D2PAK-3 Gate-source voltage: ±20V On-state resistance: 82mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTP082N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVB082N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTHL082N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 25.5A Pulsed drain current: 100A Power dissipation: 313W Case: TO247 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTHL082N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTPF082N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVHL082N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVHL082N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NST45011MW6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
1N4004 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
FQB19N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 139W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 53nC Pulsed drain current: 76A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
MC14008BDR2G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; 4bit,binary adder; CMOS; 3÷18VDC; SMD; SOIC16 Case: SOIC16 Kind of package: reel; tape Technology: CMOS Type of integrated circuit: digital Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of integrated circuit: 4bit; binary adder |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
LM258N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.6V/μs Operating temperature: -40...105°C Voltage supply range: ± 1.5...16V DC; 3...32V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
FDMS8460 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVD5C460NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 395A; 23W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 73A Pulsed drain current: 395A Power dissipation: 23W Case: DPAK Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVD5C460NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 379A; 23W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Pulsed drain current: 379A Power dissipation: 23W Case: DPAK Gate-source voltage: ±20V On-state resistance: 4.9mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTMFS5C460NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 78A; Idm: 520A; 25W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 78A Pulsed drain current: 520A Power dissipation: 25W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTTFS5C460NLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 74A; Idm: 321A; 16W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 74A Pulsed drain current: 321A Power dissipation: 16W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS5C460NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Pulsed drain current: 352A Power dissipation: 25W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MMBT2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
TIP115G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB Polarisation: bipolar Kind of transistor: Darlington Mounting: THT Type of transistor: PNP Kind of package: tube Collector current: 2A Power dissipation: 2W Collector-emitter voltage: 60V Case: TO220AB |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MBR140SFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.515V Kind of package: reel; tape |
auf Bestellung 1089 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MPSA92G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
MJD210G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: tube Frequency: 65MHz |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| MJD5731T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 350V; 1A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 1A Power dissipation: 15W Case: DPAK Current gain: 30...175 Mounting: SMD Kind of package: reel; tape Frequency: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2SB1215S-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 1W Case: DPAK Current gain: 140...280 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP115CMX120TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Output current: 0.3A Case: XDFN4 Mounting: SMD Manufacturer series: NCP115 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8408BDTRKG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 10A; Ch: 1; N-Channel; SMD; DPAK; 42V Application: automotive industry Case: DPAK Active logical level: high Type of integrated circuit: power switch Kind of integrated circuit: low-side Kind of output: N-Channel Mounting: SMD Integrated circuit features: thermal protection Operating temperature: -40...150°C On-state resistance: 55mΩ Number of channels: 1 Supply voltage: 42V Output current: 10A |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
|
|
NCP803SN463T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD DC supply current: 2.5µA Maximum output current: 20mA Threshold on-voltage: 4.63V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
NCP803SN263T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD DC supply current: 2.5µA Maximum output current: 20mA Threshold on-voltage: 2.63V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
NCP803SN120T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD DC supply current: 2.5µA Maximum output current: 20mA Threshold on-voltage: 1.2V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
NCP803SN160T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD DC supply current: 2.5µA Maximum output current: 20mA Threshold on-voltage: 1.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
NCP803SN232T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD DC supply current: 2.5µA Maximum output current: 20mA Threshold on-voltage: 2.32V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FSL337LRN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Operating voltage: 7...24.5V DC
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Application: SMPS
Type of integrated circuit: PMIC
Topology: buck; buck-boost; flyback
Number of channels: 1
Output current: 1.8A
On-state resistance: 4.75Ω
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
Duty cycle factor: 61...73%
Input voltage: 85...265V
Output voltage: 700V
Frequency: 50kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Operating voltage: 7...24.5V DC
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Application: SMPS
Type of integrated circuit: PMIC
Topology: buck; buck-boost; flyback
Number of channels: 1
Output current: 1.8A
On-state resistance: 4.75Ω
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
Duty cycle factor: 61...73%
Input voltage: 85...265V
Output voltage: 700V
Frequency: 50kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJL1302DG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075060K4S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS393DR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV2393DR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NS5B1G385DFT2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Mounting: SMD
Kind of package: reel; tape
Case: SC70
Kind of output: SPST-NO
Technology: TTL
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 1
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Mounting: SMD
Kind of package: reel; tape
Case: SC70
Kind of output: SPST-NO
Technology: TTL
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 1
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD242CG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 25
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 25
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 85+ | 0.84 EUR |
| 118+ | 0.61 EUR |
| 125+ | 0.58 EUR |
| NL27WZ17DFT2G-L22348 |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 53754 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.08 EUR |
| NL27WZ17DFT2G-Q |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.038 EUR |
| FDS89161 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SO8
Polarisation: unipolar
Gate charge: 4.1nC
On-state resistance: 176mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SO8
Polarisation: unipolar
Gate charge: 4.1nC
On-state resistance: 176mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
auf Bestellung 2192 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 54+ | 1.33 EUR |
| 55+ | 1.3 EUR |
| 61+ | 1.19 EUR |
| FDS89161LZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCH6661-TL-W |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.8A
Power dissipation: 0.8W
Case: MCPH6
Gate-source voltage: ±20V
On-state resistance: 188mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.8A
Power dissipation: 0.8W
Case: MCPH6
Gate-source voltage: ±20V
On-state resistance: 188mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S3D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
auf Bestellung 2642 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 229+ | 0.31 EUR |
| 274+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 327+ | 0.22 EUR |
| 500+ | 0.21 EUR |
| NCL30059BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; -1÷0.5A; SO8; SMD; 25÷250kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Frequency: 25...250kHz
Topology: resonant LLC
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 9...16V
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; -1÷0.5A; SO8; SMD; 25÷250kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Frequency: 25...250kHz
Topology: resonant LLC
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 9...16V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1079BAP130G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1079BBP065G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 59...71kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 59...71kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1589BMNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Type of integrated circuit: PMIC
Output current: 1.5A
Case: DFN10
Mounting: SMD
Frequency: 540...660kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...70°C
Operating voltage: 4.5...13.2V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Type of integrated circuit: PMIC
Output current: 1.5A
Case: DFN10
Mounting: SMD
Frequency: 540...660kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...70°C
Operating voltage: 4.5...13.2V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5341BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBAT54LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NST65011MW6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP45N15V2 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQPF45N15V2 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PZTA92T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 2738 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 162+ | 0.44 EUR |
| 230+ | 0.31 EUR |
| 269+ | 0.27 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| NSVPZTA92T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVPZTA92T3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUD3160DMT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SC74
Mounting: SMD
Output current: 0.2A
On-state resistance: 1.8Ω
Kind of integrated circuit: low-side
Number of channels: 2
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SC74
Mounting: SMD
Output current: 0.2A
On-state resistance: 1.8Ω
Kind of integrated circuit: low-side
Number of channels: 2
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNUD3160DMT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| NTB082N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP082N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB082N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL082N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL082N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF082N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL082N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL082N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NST45011MW6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4004 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB19N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 76A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 76A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14008BDR2G |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; 4bit,binary adder; CMOS; 3÷18VDC; SMD; SOIC16
Case: SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 4bit; binary adder
Category: Other logic integrated circuits
Description: IC: digital; 4bit,binary adder; CMOS; 3÷18VDC; SMD; SOIC16
Case: SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 4bit; binary adder
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM258N | |
|
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8460 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVD5C460NLT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 395A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 395A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 395A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 395A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVD5C460NT4G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 379A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 379A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 379A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 379A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C460NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 78A; Idm: 520A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Pulsed drain current: 520A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 78A; Idm: 520A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Pulsed drain current: 520A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS5C460NLTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 74A; Idm: 321A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 74A
Pulsed drain current: 321A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 74A; Idm: 321A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 74A
Pulsed drain current: 321A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C460NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT2222A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP115G |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 2A
Power dissipation: 2W
Collector-emitter voltage: 60V
Case: TO220AB
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 2A
Power dissipation: 2W
Collector-emitter voltage: 60V
Case: TO220AB
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 58+ | 1.25 EUR |
| 70+ | 1.02 EUR |
| MBR140SFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
auf Bestellung 1089 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 215+ | 0.33 EUR |
| 249+ | 0.29 EUR |
| 278+ | 0.26 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| MPSA92G | |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD210G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 117+ | 0.62 EUR |
| 137+ | 0.52 EUR |
| 189+ | 0.37 EUR |
| MJD5731T4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Current gain: 30...175
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Current gain: 30...175
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SB1215S-TL-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP115CMX120TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8408BDTRKG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 10A; Ch: 1; N-Channel; SMD; DPAK; 42V
Application: automotive industry
Case: DPAK
Active logical level: high
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: SMD
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
On-state resistance: 55mΩ
Number of channels: 1
Supply voltage: 42V
Output current: 10A
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 10A; Ch: 1; N-Channel; SMD; DPAK; 42V
Application: automotive industry
Case: DPAK
Active logical level: high
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: SMD
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
On-state resistance: 55mΩ
Number of channels: 1
Supply voltage: 42V
Output current: 10A
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.7 EUR |
| NCP803SN463T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP803SN263T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP803SN120T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.2V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.2V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP803SN160T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP803SN232T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.32V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.32V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH