| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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74VHC244MTC | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...5.5V DC Quiescent current: 40µA |
auf Bestellung 1762 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC244MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Case: SO20 Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74VHC244MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Quiescent current: 40µA Kind of package: reel; tape Case: TSSOP20 Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MC74VHC244DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Kind of package: tube Case: TSSOP20 Family: VHC Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SZMMSZ9V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZxxTxG Application: automotive industry |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1.2V Kind of package: reel; tape Power dissipation: 0.2W Features of semiconductor devices: fast switching Case: SOD523F Capacitance: 3pF Reverse recovery time: 4ns |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C3V3LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.3V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SZBZX84C3V3ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.3V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTB011N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W Mounting: SMD Power dissipation: 136.4W Gate charge: 37nC Polarisation: unipolar Drain current: 75.4A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 10.9mΩ Pulsed drain current: 323A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| H11L2SR2M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 4.17kV Transfer rate: 1Mbps Case: PDIP6 Turn-on time: 1µs Turn-off time: 1.2µs Max. off-state voltage: 6V Output voltage: 0...16V Manufacturer series: H11L2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MMSZ5251BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ5251BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FODM453 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 20-50%@16mA Case: Mini-flat 5pin Output voltage: -500mV...20V Max. off-state voltage: 5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FODM453R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1Mbps; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV Case: Mini-flat 5pin Slew rate: 40kV/μs Transfer rate: 1Mbps |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FODM453R2V | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; 1Mbps; MFP5 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 20-50%@16mA Case: MFP5 Output voltage: -500mV...20V Max. off-state voltage: 5V Transfer rate: 1Mbps Manufacturer series: FODM453 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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6N139M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Case: DIP8 Turn-on time: 25µs Turn-off time: 60µs CTR@If: 500%@1.6mA Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DFB20100 | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A Case: TS-6P Max. off-state voltage: 1kV Load current: 20A Max. forward voltage: 1.1V Kind of package: tube Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward impulse current: 250A Version: flat Leads: flat pin |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NRVBB20100CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| KA1H0165RTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 0.7A Output voltage: 650V Frequency: 0.1MHz Number of channels: 1 Case: TO220F-4 Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 10Ω Duty cycle factor: 64...70% Kind of package: tube Power: 40W Operating voltage: 10...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGH50T65UPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 150A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 170W Gate charge: 230nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGHL50T65LQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 170W Gate charge: 509nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGHL50T65MQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 134W Gate charge: 94nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGHL50T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 134W Gate charge: 99nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGHL50T65SQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 134W Gate charge: 99.7nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| AFGHL50T65RQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry Mounting: THT Case: TO247-3 Pulsed collector current: 200A Application: automotive industry Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 173W Gate charge: 65nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| AFGHL50T65SQ | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 134W Gate charge: 99nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| AFGHL50T65SQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 134W Gate charge: 102nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| AFGHL50T65SQDC | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 119W Gate charge: 94nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MB10S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGHL75T65MQDTL4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 375W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: SO8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: reel; tape Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP |
auf Bestellung 1580 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33153PG | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1 Mounting: SMD Operating temperature: -40...105°C Output current: -2...1A Type of integrated circuit: driver Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP Pulse fall time: 55ns Output voltage: 2...13.9V Kind of package: tube Case: DIP8 Kind of integrated circuit: IGBT gate driver Number of channels: 1 Impulse rise time: 55ns Topology: H-bridge Supply voltage: 11...20V DC |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5233DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ Mounting: SMD Type of transistor: NPN x2 Current gain: 80...200 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 1335 Stücke: Lieferzeit 14-21 Tag (e) |
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6N138M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FNB41060 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Mounting: THT Frequency: 20kHz Number of channels: 6 Power dissipation: 32W Operating voltage: 13.5...16.5/0...400V DC Kind of integrated circuit: 3-phase motor controller; IPM Collector-emitter voltage: 600V Technology: Motion SPM® 45 Case: SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Operating temperature: -40...125°C Output current: 10A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC143ZM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Power dissipation: 0.6W Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSVDTC143ZM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Power dissipation: 0.6W Application: automotive industry Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC74HCT86ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 20ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MC74HCT86ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 20ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NJVMJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MMSD4148 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.4W Features of semiconductor devices: fast switching Capacitance: 4pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NCS20034DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SO14 Operating temperature: -40...125°C Integrated circuit features: rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC14518BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Type of integrated circuit: digital Kind of integrated circuit: BCD; up counter Case: SO16WB Technology: CMOS Family: HEF4000B Kind of package: reel; tape Mounting: SMD Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC14518BDWG | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Type of integrated circuit: digital Kind of integrated circuit: BCD; up counter Case: SO16WB Technology: CMOS Family: HEF4000B Kind of package: tube Mounting: SMD Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2576D2T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2576D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NL27WZ00USG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC Type of integrated circuit: digital Technology: CMOS Supply voltage: 1.65...5.5V Kind of gate: NAND Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 2 Case: US8 Family: AUC Number of outputs: 1 Number of channels: 2 Mounting: SMD Delay time: 2.4ns |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP92BU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 40 Mounting: THT Kind of package: bulk Frequency: 50MHz |
auf Bestellung 7761 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP92TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| NST3904DP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963 Polarisation: bipolar Case: SOT963 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.42W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NST3904DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Polarisation: bipolar Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.357W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSVJ6904DSB6T1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA Polarisation: unipolar Semiconductor structure: common source Case: CPH6 Type of transistor: N-JFET x2 Kind of package: reel; tape Mounting: SMD Gate-source voltage: -25V Gate current: 10mA Drain current: 20mA Power dissipation: 0.7W Drain-source voltage: 25V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSVT3904DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Application: automotive industry Polarisation: bipolar Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.357W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 2.5V Breakdown voltage: 4V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 6µA Peak pulse power dissipation: 0.12kW Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NTBG028N170M1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 195A Power dissipation: 214W Gate charge: 222nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 53A Kind of channel: enhancement Drain-source voltage: 1.7kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 57mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVBG020N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8.6A Pulsed drain current: 392A Power dissipation: 3.7W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 0.22µC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 448A Power dissipation: 3.7W Gate charge: 200nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -5...15V On-state resistance: 27mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTBG020N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 392A Power dissipation: 3.7W Gate charge: 0.22µC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 8.6A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTBG022N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 297A Power dissipation: 220W Gate charge: 142nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 71A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 44mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.8A Pulsed drain current: 448A Power dissipation: 3.7W Case: D2PAK-7 Gate-source voltage: -5...15V On-state resistance: 27mΩ Mounting: SMD Gate charge: 200nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 74VHC244MTC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
auf Bestellung 1762 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 97+ | 0.88 EUR |
| 111+ | 0.77 EUR |
| 127+ | 0.67 EUR |
| 133+ | 0.64 EUR |
| 74VHC244MX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Case: SO20
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Case: SO20
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC244MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP20
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP20
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC244DTG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ9V1T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 650+ | 0.13 EUR |
| 1051+ | 0.081 EUR |
| 1345+ | 0.063 EUR |
| 1619+ | 0.052 EUR |
| 1761+ | 0.049 EUR |
| 1SS400T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Case: SOD523F
Capacitance: 3pF
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Case: SOD523F
Capacitance: 3pF
Reverse recovery time: 4ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.74 EUR |
| SZBZX84C3V3LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C3V3ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTB011N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
Power dissipation: 136.4W
Gate charge: 37nC
Polarisation: unipolar
Drain current: 75.4A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 10.9mΩ
Pulsed drain current: 323A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
Power dissipation: 136.4W
Gate charge: 37nC
Polarisation: unipolar
Drain current: 75.4A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 10.9mΩ
Pulsed drain current: 323A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| H11L2SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5251BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 582+ | 0.14 EUR |
| 676+ | 0.13 EUR |
| 1202+ | 0.07 EUR |
| 1749+ | 0.049 EUR |
| 2033+ | 0.042 EUR |
| SZMMSZ5251BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM453 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Case: Mini-flat 5pin
Output voltage: -500mV...20V
Max. off-state voltage: 5V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Case: Mini-flat 5pin
Output voltage: -500mV...20V
Max. off-state voltage: 5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM453R2 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Mini-flat 5pin
Slew rate: 40kV/μs
Transfer rate: 1Mbps
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Mini-flat 5pin
Slew rate: 40kV/μs
Transfer rate: 1Mbps
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM453R2V |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; 1Mbps; MFP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Case: MFP5
Output voltage: -500mV...20V
Max. off-state voltage: 5V
Transfer rate: 1Mbps
Manufacturer series: FODM453
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; 1Mbps; MFP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Case: MFP5
Output voltage: -500mV...20V
Max. off-state voltage: 5V
Transfer rate: 1Mbps
Manufacturer series: FODM453
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 6N139M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
CTR@If: 500%@1.6mA
Slew rate: 2.5kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
CTR@If: 500%@1.6mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DFB20100 |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Max. forward voltage: 1.1V
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 250A
Version: flat
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Max. forward voltage: 1.1V
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 250A
Version: flat
Leads: flat pin
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBB20100CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| KA1H0165RTU |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGH50T65UPD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 150A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 170W
Gate charge: 230nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 150A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 170W
Gate charge: 230nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGHL50T65LQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 170W
Gate charge: 509nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 170W
Gate charge: 509nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGHL50T65MQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 94nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 94nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGHL50T65MQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGHL50T65SQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99.7nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AFGHL50T65RQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Application: automotive industry
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 173W
Gate charge: 65nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Application: automotive industry
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 173W
Gate charge: 65nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AFGHL50T65SQ |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL50T65SQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 102nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 102nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL50T65SQDC |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 119W
Gate charge: 94nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 119W
Gate charge: 94nC
Produkt ist nicht verfügbar
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| MB10S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| FGHL75T65MQDTL4 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| MC33153DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 2.68 EUR |
| 43+ | 1.99 EUR |
| 46+ | 1.86 EUR |
| MC33153PG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Output current: -2...1A
Type of integrated circuit: driver
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Pulse fall time: 55ns
Output voltage: 2...13.9V
Kind of package: tube
Case: DIP8
Kind of integrated circuit: IGBT gate driver
Number of channels: 1
Impulse rise time: 55ns
Topology: H-bridge
Supply voltage: 11...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Output current: -2...1A
Type of integrated circuit: driver
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Pulse fall time: 55ns
Output voltage: 2...13.9V
Kind of package: tube
Case: DIP8
Kind of integrated circuit: IGBT gate driver
Number of channels: 1
Impulse rise time: 55ns
Topology: H-bridge
Supply voltage: 11...20V DC
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 72+ | 1.19 EUR |
| 77+ | 1.11 EUR |
| MUN5233DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Type of transistor: NPN x2
Current gain: 80...200
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Type of transistor: NPN x2
Current gain: 80...200
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1335 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.32 EUR |
| 321+ | 0.26 EUR |
| 368+ | 0.23 EUR |
| 653+ | 0.13 EUR |
| 962+ | 0.088 EUR |
| 1117+ | 0.076 EUR |
| 6N138M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FNB41060 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 32W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 10A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 32W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 10A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.8 EUR |
| 6+ | 16.51 EUR |
| 12+ | 15.36 EUR |
| DTC143ZM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 80...200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTC143ZM3T5G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Application: automotive industry
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Application: automotive industry
Current gain: 80...200
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74HCT86ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT86ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| NJVMJD112T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMSD4148 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Features of semiconductor devices: fast switching
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Features of semiconductor devices: fast switching
Capacitance: 4pF
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| NCS20034DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| MC14518BDWR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
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Mindestbestellmenge: 1000 Stücke
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| MC14518BDWG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
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| LM2576D2T-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
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| LM2576D2T-ADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| NL27WZ00USG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Supply voltage: 1.65...5.5V
Kind of gate: NAND
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 2
Case: US8
Family: AUC
Number of outputs: 1
Number of channels: 2
Mounting: SMD
Delay time: 2.4ns
Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Supply voltage: 1.65...5.5V
Kind of gate: NAND
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 2
Case: US8
Family: AUC
Number of outputs: 1
Number of channels: 2
Mounting: SMD
Delay time: 2.4ns
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 385+ | 0.23 EUR |
| 496+ | 0.17 EUR |
| 582+ | 0.14 EUR |
| 658+ | 0.13 EUR |
| 685+ | 0.12 EUR |
| KSP92BU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 7761 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 589+ | 0.14 EUR |
| 831+ | 0.1 EUR |
| 995+ | 0.086 EUR |
| KSP92TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 228+ | 0.37 EUR |
| 360+ | 0.24 EUR |
| 565+ | 0.15 EUR |
| 767+ | 0.11 EUR |
| 1000+ | 0.099 EUR |
| NST3904DP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
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| NST3904DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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| NSVJ6904DSB6T1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NSVT3904DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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| ESD5Z2.5T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Peak pulse power dissipation: 0.12kW
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Peak pulse power dissipation: 0.12kW
Kind of package: reel; tape
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| NTBG028N170M1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 195A
Power dissipation: 214W
Gate charge: 222nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 53A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 195A
Power dissipation: 214W
Gate charge: 222nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 53A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NVBG020N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NTBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 448A
Power dissipation: 3.7W
Gate charge: 200nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 448A
Power dissipation: 3.7W
Gate charge: 200nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBG020N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 392A
Power dissipation: 3.7W
Gate charge: 0.22µC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 8.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 392A
Power dissipation: 3.7W
Gate charge: 0.22µC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 8.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBG022N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 297A
Power dissipation: 220W
Gate charge: 142nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 44mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 297A
Power dissipation: 220W
Gate charge: 142nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 44mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NVBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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