| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| NCV4274CDT50RKG | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV4274ADT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV33274ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 10V/μs Input offset voltage: 3.5mV Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 80nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMS86310 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56 Type of transistor: N-MOSFET Case: Power56 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 95nC On-state resistance: 7.2mΩ Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 80V Power dissipation: 96W Pulsed drain current: 100A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NSVR0170HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 0.64V Max. forward impulse current: 0.1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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RB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| RB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVRB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVRB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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M74VHC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC Case: TSOP5 Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Number of inputs: 1 Manufacturer series: VHC Family: VHC Technology: CMOS Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: inverter Kind of gate: NOT Kind of package: reel; tape Mounting: SMD |
auf Bestellung 2873 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCXU04DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Case: SOIC14 Operating temperature: -40...85°C Supply voltage: 1.5...3.6V DC Number of inputs: 1 Family: LCXU Technology: CMOS Type of integrated circuit: digital Number of channels: 6 Kind of integrated circuit: hex; inverter Kind of gate: NOT Kind of package: tube Mounting: SMD Integrated circuit features: tolerates a voltage of 5V on the inputs |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJD41CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NJVMJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC100ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Manufacturer series: 100ELT Case: SO8 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of outputs: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC100ELT23DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 2 Manufacturer series: 100ELT Case: TSSOP8 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.75...5.25V DC Number of outputs: 2 Number of inputs: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| BAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SBAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBR745G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. load current: 7.5A |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSR201MXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Case: X2DFN2 Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Capacitance: 0.15pF Load current: 50mA Max. forward voltage: 0.32V Max. off-state voltage: 2V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCH190N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Case: TO247-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 60nC Power dissipation: 208W Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVB190N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCP190N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 63nC Power dissipation: 208W Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCP190N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 60nC Power dissipation: 208W Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCP190N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 33nC Power dissipation: 144W Pulsed drain current: 42.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 33nC Power dissipation: 144W Pulsed drain current: 42.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTP190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCPF190N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Case: TO220FP Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 63nC Power dissipation: 39W Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCPF190N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Case: TO220FP Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.199Ω Gate charge: 57nC Power dissipation: 39W Pulsed drain current: 60.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Case: TO247 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.165Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Case: TDFN4 Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 31nC Power dissipation: 129W Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TDFN4 Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTPF190N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Case: TO220FP Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 31nC Power dissipation: 32W Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTPF190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TO220FP Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 36W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74HC05ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC05ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC05ADTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74HC05ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of output: open drain Manufacturer series: HC Kind of integrated circuit: hex; inverter Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC33071DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
auf Bestellung 2327 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC33071ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FCP104N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.104Ω Power dissipation: 357W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FCH104N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Case: TO247 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement Application: automotive industry On-state resistance: 0.104Ω Power dissipation: 357W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14049UBDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Kind of integrated circuit: buffer; inverting Kind of package: tube Technology: CMOS Type of integrated circuit: digital Case: SO16 Number of channels: 6 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14049BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Kind of integrated circuit: buffer; inverting Kind of package: reel; tape Technology: CMOS Type of integrated circuit: digital Case: SO16 Number of channels: 6 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC14049UBDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16 Kind of integrated circuit: buffer; hex; inverter Kind of package: reel; tape Technology: CMOS Type of integrated circuit: digital Case: TSSOP16 Number of channels: 6 Mounting: SMD Operating temperature: -55...125°C Number of inputs: 1 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14049UBDR2G | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: buffer; hex; inverter Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FOD852300W | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA Collector-emitter voltage: 300V Case: DIP4 Turn-off time: 20µs Turn-on time: 0.1ms |
auf Bestellung 1295 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD852300 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4 Manufacturer series: FOD852 Kind of output: Darlington Case: DIP4 Type of optocoupler: optocoupler Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 300V CTR@If: 1000-15000%@1mA Insulation voltage: 5kV Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMBD452LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Capacitance: 1.5pF Max. forward voltage: 0.6V Max. off-state voltage: 30V Semiconductor structure: double series Case: SOT23 |
auf Bestellung 8960 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSD301T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Case: SOD123 Capacitance: 1.5pF Load current: 0.2A Power dissipation: 0.225W Max. forward voltage: 0.6V Max. off-state voltage: 30V Kind of package: reel; tape |
auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZMMSZ5229BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BC858BLT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Frequency: 100MHz Current gain: 220...475 Kind of package: reel; tape |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
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BC858BLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Frequency: 100MHz Current gain: 220...475 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC858BWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Mounting: SMD Frequency: 100MHz Current gain: 220...475 Kind of package: reel; tape |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV99LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.75V Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74AC05DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Kind of output: open drain |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NZT660A | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 250...550 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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HCPL2630 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 2.5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 10kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| HCPL2630SDM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; 10Mbps; PDIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV Transfer rate: 10Mbps Case: PDIP8 Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -0.5...7V Manufacturer series: HCPL2630M |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCV4274CDT50RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV4274ADT50RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV33274ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 10V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 10V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86310 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVR0170HT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB751S40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| RB751S40T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVRB751S40T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVRB751S40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M74VHC1GU04DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Case: TSOP5
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 1
Manufacturer series: VHC
Family: VHC
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Case: TSOP5
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 1
Manufacturer series: VHC
Family: VHC
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2873 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 200+ | 0.36 EUR |
| 233+ | 0.31 EUR |
| 264+ | 0.27 EUR |
| 343+ | 0.21 EUR |
| 477+ | 0.15 EUR |
| 511+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| MC74LCXU04DG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of inputs: 1
Family: LCXU
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of inputs: 1
Family: LCXU
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Integrated circuit features: tolerates a voltage of 5V on the inputs
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 110+ | 0.65 EUR |
| 141+ | 0.51 EUR |
| 171+ | 0.42 EUR |
| 181+ | 0.4 EUR |
| MJD41CRLG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD41CT4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD41CT4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC100ELT25DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Manufacturer series: 100ELT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of outputs: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Manufacturer series: 100ELT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of outputs: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC100ELT23DTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Manufacturer series: 100ELT
Case: TSSOP8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of outputs: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Manufacturer series: 100ELT
Case: TSSOP8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of outputs: 2
Number of inputs: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16HT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBAS16HT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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| MBR745G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 103+ | 0.7 EUR |
| 117+ | 0.61 EUR |
| NSR201MXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
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| FCH190N65F-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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| NVB190N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
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| FCP190N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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| FCP190N65F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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| FCP190N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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| FCP190N65S3R0 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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| NTB190N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTP190N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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| FCPF190N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 39W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 39W
Pulsed drain current: 61.8A
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| FCPF190N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.199Ω
Gate charge: 57nC
Power dissipation: 39W
Pulsed drain current: 60.6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.199Ω
Gate charge: 57nC
Power dissipation: 39W
Pulsed drain current: 60.6A
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| NTHL190N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| NTMT190N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTMT190N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTPF190N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| NTPF190N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC05ADG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
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| MC74HC05ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74HC05ADTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Produkt ist nicht verfügbar
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| MC74HC05ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Manufacturer series: HC
Kind of integrated circuit: hex; inverter
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Manufacturer series: HC
Kind of integrated circuit: hex; inverter
Technology: CMOS
Number of inputs: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC33071DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 145+ | 0.49 EUR |
| MC33071ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP104N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH104N60F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
On-state resistance: 0.104Ω
Power dissipation: 357W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
On-state resistance: 0.104Ω
Power dissipation: 357W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14049UBDG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Kind of integrated circuit: buffer; inverting
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Kind of integrated circuit: buffer; inverting
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 197+ | 0.36 EUR |
| 218+ | 0.33 EUR |
| 224+ | 0.32 EUR |
| MC14049BDR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Kind of integrated circuit: buffer; inverting
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Kind of integrated circuit: buffer; inverting
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 94+ | 0.76 EUR |
| MC14049UBDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Kind of integrated circuit: buffer; hex; inverter
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP16
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Kind of integrated circuit: buffer; hex; inverter
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP16
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC14049UBDR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD852300W |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Collector-emitter voltage: 300V
Case: DIP4
Turn-off time: 20µs
Turn-on time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Collector-emitter voltage: 300V
Case: DIP4
Turn-off time: 20µs
Turn-on time: 0.1ms
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 82+ | 0.88 EUR |
| 96+ | 0.75 EUR |
| 114+ | 0.63 EUR |
| FOD852300 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Manufacturer series: FOD852
Kind of output: Darlington
Case: DIP4
Type of optocoupler: optocoupler
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Manufacturer series: FOD852
Kind of output: Darlington
Case: DIP4
Type of optocoupler: optocoupler
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD452LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
auf Bestellung 8960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 491+ | 0.15 EUR |
| 589+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 747+ | 0.096 EUR |
| MMSD301T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Capacitance: 1.5pF
Load current: 0.2A
Power dissipation: 0.225W
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Capacitance: 1.5pF
Load current: 0.2A
Power dissipation: 0.225W
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Kind of package: reel; tape
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 224+ | 0.31 EUR |
| SZMMSZ5229BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858BLT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 220...475
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 220...475
Kind of package: reel; tape
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 807+ | 0.089 EUR |
| 935+ | 0.077 EUR |
| 1169+ | 0.061 EUR |
| 1393+ | 0.051 EUR |
| 2041+ | 0.035 EUR |
| 2100+ | 0.034 EUR |
| BC858BLT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 220...475
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 220...475
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC858BWT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 220...475
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 220...475
Kind of package: reel; tape
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 610+ | 0.12 EUR |
| 1076+ | 0.066 EUR |
| 1520+ | 0.047 EUR |
| 1725+ | 0.041 EUR |
| 3000+ | 0.035 EUR |
| 6000+ | 0.032 EUR |
| BAV99LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC05DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: open drain
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NZT660A |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2630 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2630SDM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; 10Mbps; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: PDIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2630M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; 10Mbps; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: PDIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2630M
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH