FGHL50T65MQD ON Semiconductor
auf Bestellung 82750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 4.09 EUR |
| 500+ | 3.79 EUR |
| 1000+ | 3.43 EUR |
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Technische Details FGHL50T65MQD ON Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 32 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/120ns, Switching Energy: 1.05mJ (on), 700µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGHL50T65MQD nach Preis ab 3.52 EUR bis 8.71 EUR
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FGHL50T65MQD | Hersteller : onsemi |
 IGBTs 650 V 50 A FS4 |
auf Bestellung 429 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL50T65MQD | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 32 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/120ns Switching Energy: 1.05mJ (on), 700µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 455 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGHL50T65MQD | Hersteller : ON Semiconductor |
650 V, 50 A Field Stop Trench IGBT |
Produkt ist nicht verfügbar |
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FGHL50T65MQD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FGHL50T65MQD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 94nC |
Produkt ist nicht verfügbar |