FGHL50T65MQD onsemi
Hersteller: onsemiDescription: IGBT 650V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 1.05mJ (on), 700µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.66 EUR |
| 10+ | 6.43 EUR |
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Technische Details FGHL50T65MQD onsemi
Description: IGBT 650V 50A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 32 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/120ns, Switching Energy: 1.05mJ (on), 700µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGHL50T65MQD nach Preis ab 5.54 EUR bis 11.36 EUR
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FGHL50T65MQD | Hersteller : onsemi |
IGBT Transistors 650 V 50 A FS4 |
auf Bestellung 450 Stücke: Lieferzeit 14-28 Tag (e) |
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| FGHL50T65MQD | Hersteller : ON Semiconductor |
650 V, 50 A Field Stop Trench IGBT |
Produkt ist nicht verfügbar |