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SMBJ30A SMBJ30A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE595DB0BAAF36D213B&compId=SMBJ5V0A.pdf?ci_sign=fdc5a8c2c6c2f264341af8b400410fa2a2614710 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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FCD3400N80Z FCD3400N80Z ONSEMI fcu3400n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 9.6nC
Drain current: 1.2A
On-state resistance: 3.4Ω
Pulsed drain current: 4A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Case: DPAK
Polarisation: unipolar
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NCP5623BMUTBG ONSEMI Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Kind of integrated circuit: LED driver
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
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SURA8215T3G-VF01 ONSEMI Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 150V
Application: automotive industry
Kind of package: reel; tape
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NRVBA340NT3G NRVBA340NT3G ONSEMI mbra340t3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Semiconductor structure: single diode
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MC14093BDTR2G MC14093BDTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3FB820&compId=MC14093B-D.pdf?ci_sign=1d5043647155392b8d759285f154591464f8011b Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Family: HEF4000B
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MARMC14093BDR2G ONSEMI Category: Unclassified
Description: MARMC14093BDR2G
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.2 EUR
Mindestbestellmenge: 2500
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LM2931CDG LM2931CDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC96806E89ECAF20CE&compId=LM2931.PDF?ci_sign=e63d7a061eeda30d76b734ca2e668b34e61e33c4 description Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 3.3...26V
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SZMMSZ5239BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MC74HC365ADR2G MC74HC365ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697840D3&compId=MC74HC365A-D.pdf?ci_sign=497865bdbecc490262be36b5965317f894d9003e Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
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SURA8205T3G-VF01 ONSEMI mura205t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 30ns
Max. forward voltage: 0.94V
Load current: 2A
Max. off-state voltage: 50V
Application: automotive industry
Kind of package: reel; tape
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FAN3227TMX FAN3227TMX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95EA60CBC4D8E0CE&compId=FAN3226_9.PDF?ci_sign=e9e2ab640e6409ac56da60645065d1efebde1199 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 22ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
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FAN3227TMX-F085 ONSEMI fan3229t_f085-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 22ns
Pulse fall time: 17ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
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MM3Z56VB ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2D18229E340D3&compId=MM3Z9V1B.PDF?ci_sign=65dd7bc3479acba487a5d8985c5a4f52153fb609 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 56V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Manufacturer series: MM3ZxxB
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MM3Z56VC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 56V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Manufacturer series: MM3Z
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MM3Z56VT1G MM3Z56VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 56V; SMD; reel,tape; SOD323; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MM3ZxxT1G
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SZMM3Z56VT1G SZMM3Z56VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 56V; SMD; reel,tape; SOD323; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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FDS6679AZ FDS6679AZ ONSEMI FDS6679AZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
68+1.07 EUR
82+0.88 EUR
95+0.76 EUR
109+0.66 EUR
Mindestbestellmenge: 50
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FDMC6679AZ ONSEMI fdmc6679az-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
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GBPC3508 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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FSV2060L ONSEMI fsv2060l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 20A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.6V
Load current: 20A
Max. off-state voltage: 60V
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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FUSB252GEVB ONSEMI fusb252-d.pdf Category: Microchip development kits
Description: FUSB252GEVB
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
1+159.75 EUR
4+138.02 EUR
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FDPF390N15A FDPF390N15A ONSEMI fdpf390n15a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
42+1.72 EUR
50+1.46 EUR
53+1.36 EUR
Mindestbestellmenge: 38
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NVMJST1D6N04CTXG ONSEMI nvmjst1d6n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 314A; Idm: 900A; 150W; TCPAK10
Case: TCPAK10
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 1.65mΩ
Drain-source voltage: 40V
Drain current: 314A
Power dissipation: 150W
Pulsed drain current: 900A
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FSV8100V ONSEMI fsv8100v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 8A; reel,tape
Case: TO277
Max. forward voltage: 0.61V
Load current: 8A
Max. off-state voltage: 100V
Max. forward impulse current: 150A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
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GBU6G GBU6G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6J GBU6J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6B GBU6B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6D GBU6D ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6A GBU6A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDMS6673BZ ONSEMI fdms6673bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3662 ONSEMI fdms3662-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14024BDG MC14024BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A1A0C7&compId=MC14024BDG.pdf?ci_sign=d5b77dabb88b551cde19eea06d47fb86d36016a9 Category: Counters/dividers
Description: IC: digital; 7bit,asynchronous,binary counter; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: 7bit; asynchronous; binary counter
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
auf Bestellung 167 Stücke:
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136+0.53 EUR
167+0.43 EUR
Mindestbestellmenge: 136
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MMBT5089LT1G MMBT5089LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C12D3F357DC0CE&compId=MMBT5088L_MMBT5089L.PDF?ci_sign=a6e8d97f788a8156f13573a4886db6c597d44311 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 25V
Current gain: 400...1200
Frequency: 50MHz
Polarisation: bipolar
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
178+0.4 EUR
Mindestbestellmenge: 178
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MMBT489LT1G MMBT489LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1195A212DA0CE&compId=MMBT489LT1G.PDF?ci_sign=6da66de0c837918594472ee426b58174fb3c5303 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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SBAS21DW5T1G SBAS21DW5T1G ONSEMI bas19lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
459+0.16 EUR
593+0.12 EUR
920+0.078 EUR
1090+0.066 EUR
1112+0.064 EUR
Mindestbestellmenge: 358
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MMBZ5250BLT1G MMBZ5250BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMBZ52xxBLT1G
Kind of package: reel; tape
auf Bestellung 5975 Stücke:
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715+0.1 EUR
1042+0.069 EUR
1303+0.055 EUR
1534+0.047 EUR
1812+0.039 EUR
2605+0.027 EUR
3268+0.022 EUR
Mindestbestellmenge: 715
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MMSZ5250BT1G MMSZ5250BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMSZ52xxB
Kind of package: reel; tape
auf Bestellung 3405 Stücke:
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500+0.14 EUR
705+0.1 EUR
1083+0.066 EUR
1316+0.054 EUR
2050+0.035 EUR
2337+0.031 EUR
Mindestbestellmenge: 500
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TIP115 TIP115 ONSEMI en.CD00000909.pdf TIP115-17.pdf Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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CNY172SR2VM ONSEMI cny17f4m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 70V
Case: PDIP6
Max. off-state voltage: 6V
Number of pins: 6
Load current: 60mA
Manufacturer series: CNY17
Operating temperature: -40...100°C
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.28 EUR
Mindestbestellmenge: 1000
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CNY172TVM ONSEMI cny17f4m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.25 EUR
Mindestbestellmenge: 1000
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CNY172SM ONSEMI cny17f4m-d.pdf FAIR-S-A0001784634-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.25 EUR
Mindestbestellmenge: 1000
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MARNLV14051BDR2G ONSEMI Category: Unclassified
Description: MARNLV14051BDR2G
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.012 EUR
Mindestbestellmenge: 10000
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FDS86141 FDS86141 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9FFE92E2B6259&compId=FDS86141.pdf?ci_sign=081af4a1e1f0dfe562a326622bb881412132cb43 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 16.5nC
On-state resistance: 40mΩ
Power dissipation: 2.5W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSZ5238BT1G MMSZ5238BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 97 Stücke:
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97+0.74 EUR
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MMSZ5238B MMSZ5238B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 547 Stücke:
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547+0.13 EUR
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SZMMSZ5238BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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FDS4672A FDS4672A ONSEMI fds4672a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
74+0.97 EUR
100+0.9 EUR
Mindestbestellmenge: 46
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SS33 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward impulse current: 100A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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RGP10K ONSEMI RGP10M-D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 500ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 0.5µs
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: DO41
Produkt ist nicht verfügbar
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MMQA12VT1G ONSEMI mmqa-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Type of diode: TVS array
Max. off-state voltage: 9.1V
Semiconductor structure: common anode; quadruple
Case: SC74-6
Mounting: SMD
Kind of package: reel; tape
Application: universal
Number of channels: 4
Tolerance: ±5%
Breakdown voltage: 12V
Version: ESD
Produkt ist nicht verfügbar
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ESD9B5.0ST5G ESD9B5.0ST5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786888FB7ACA94745&compId=ESD9B5.0ST5G.PDF?ci_sign=5ddc4e572c09119a74a776a768fd7b638ac2fef5 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.3W
Leakage current: 0.1µA
Version: ESD
Max. forward impulse current: 15A
auf Bestellung 11712 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1042+0.069 EUR
1352+0.053 EUR
2552+0.028 EUR
3356+0.021 EUR
3624+0.02 EUR
3876+0.018 EUR
Mindestbestellmenge: 625
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SZESD9B5.0ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVDTA114EM3T5G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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DTA114EM3T5G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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DTA114YM3T5G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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DTC114TM3T5G ONSEMI dtc114t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 160...350
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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NSVDTA114YM3T5G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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NSVDTC114YM3T5G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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NDS352AP NDS352AP ONSEMI pVersion=0046&contRep=ZT&docId=E20E0B63306A91F1A303005056AB0C4F&compId=NDS352AP.pdf?ci_sign=998d96103698b14ff6cae56ff7c2b7792e3efca8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
163+0.44 EUR
215+0.33 EUR
242+0.3 EUR
283+0.25 EUR
Mindestbestellmenge: 122
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SMBJ30A pVersion=0046&contRep=ZT&docId=005056AB752F1EE595DB0BAAF36D213B&compId=SMBJ5V0A.pdf?ci_sign=fdc5a8c2c6c2f264341af8b400410fa2a2614710
SMBJ30A
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FCD3400N80Z fcu3400n80z-d.pdf
FCD3400N80Z
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 9.6nC
Drain current: 1.2A
On-state resistance: 3.4Ω
Pulsed drain current: 4A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Case: DPAK
Polarisation: unipolar
Produkt ist nicht verfügbar
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NCP5623BMUTBG
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Kind of integrated circuit: LED driver
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
Produkt ist nicht verfügbar
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SURA8215T3G-VF01
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 150V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVBA340NT3G mbra340t3-d.pdf
NRVBA340NT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MC14093BDTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3FB820&compId=MC14093B-D.pdf?ci_sign=1d5043647155392b8d759285f154591464f8011b
MC14093BDTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Family: HEF4000B
Produkt ist nicht verfügbar
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MARMC14093BDR2G
Hersteller: ONSEMI
Category: Unclassified
Description: MARMC14093BDR2G
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.2 EUR
Mindestbestellmenge: 2500
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LM2931CDG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDC96806E89ECAF20CE&compId=LM2931.PDF?ci_sign=e63d7a061eeda30d76b734ca2e668b34e61e33c4
LM2931CDG
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 3.3...26V
Produkt ist nicht verfügbar
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SZMMSZ5239BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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MC74HC365ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697840D3&compId=MC74HC365A-D.pdf?ci_sign=497865bdbecc490262be36b5965317f894d9003e
MC74HC365ADR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
Produkt ist nicht verfügbar
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SURA8205T3G-VF01 mura205t3-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 30ns
Max. forward voltage: 0.94V
Load current: 2A
Max. off-state voltage: 50V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN3227TMX pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95EA60CBC4D8E0CE&compId=FAN3226_9.PDF?ci_sign=e9e2ab640e6409ac56da60645065d1efebde1199
FAN3227TMX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 22ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
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FAN3227TMX-F085 fan3229t_f085-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 22ns
Pulse fall time: 17ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z56VB pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2D18229E340D3&compId=MM3Z9V1B.PDF?ci_sign=65dd7bc3479acba487a5d8985c5a4f52153fb609
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 56V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Manufacturer series: MM3ZxxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z56VC pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 56V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Manufacturer series: MM3Z
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z56VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z56VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 56V; SMD; reel,tape; SOD323; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MM3ZxxT1G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMM3Z56VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z56VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 56V; SMD; reel,tape; SOD323; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDS6679AZ FDS6679AZ.pdf
FDS6679AZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
68+1.07 EUR
82+0.88 EUR
95+0.76 EUR
109+0.66 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FDMC6679AZ fdmc6679az-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC3508 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSV2060L fsv2060l-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 20A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.6V
Load current: 20A
Max. off-state voltage: 60V
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FUSB252GEVB fusb252-d.pdf
Hersteller: ONSEMI
Category: Microchip development kits
Description: FUSB252GEVB
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+159.75 EUR
4+138.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDPF390N15A fdpf390n15a-d.pdf
FDPF390N15A
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
42+1.72 EUR
50+1.46 EUR
53+1.36 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST1D6N04CTXG nvmjst1d6n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 314A; Idm: 900A; 150W; TCPAK10
Case: TCPAK10
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 1.65mΩ
Drain-source voltage: 40V
Drain current: 314A
Power dissipation: 150W
Pulsed drain current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSV8100V fsv8100v-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 8A; reel,tape
Case: TO277
Max. forward voltage: 0.61V
Load current: 8A
Max. off-state voltage: 100V
Max. forward impulse current: 150A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6G
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6J
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6B pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6B
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6D pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6D
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6A
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FDMS6673BZ fdms6673bz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS3662 fdms3662-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14024BDG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A1A0C7&compId=MC14024BDG.pdf?ci_sign=d5b77dabb88b551cde19eea06d47fb86d36016a9
MC14024BDG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 7bit,asynchronous,binary counter; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: 7bit; asynchronous; binary counter
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
167+0.43 EUR
Mindestbestellmenge: 136
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MMBT5089LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C12D3F357DC0CE&compId=MMBT5088L_MMBT5089L.PDF?ci_sign=a6e8d97f788a8156f13573a4886db6c597d44311
MMBT5089LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 25V
Current gain: 400...1200
Frequency: 50MHz
Polarisation: bipolar
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
178+0.4 EUR
Mindestbestellmenge: 178
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MMBT489LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1195A212DA0CE&compId=MMBT489LT1G.PDF?ci_sign=6da66de0c837918594472ee426b58174fb3c5303
MMBT489LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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SBAS21DW5T1G bas19lt1-d.pdf
SBAS21DW5T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
459+0.16 EUR
593+0.12 EUR
920+0.078 EUR
1090+0.066 EUR
1112+0.064 EUR
Mindestbestellmenge: 358
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MMBZ5250BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5250BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMBZ52xxBLT1G
Kind of package: reel; tape
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1042+0.069 EUR
1303+0.055 EUR
1534+0.047 EUR
1812+0.039 EUR
2605+0.027 EUR
3268+0.022 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5250BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5250BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMSZ52xxB
Kind of package: reel; tape
auf Bestellung 3405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
705+0.1 EUR
1083+0.066 EUR
1316+0.054 EUR
2050+0.035 EUR
2337+0.031 EUR
Mindestbestellmenge: 500
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TIP115 en.CD00000909.pdf TIP115-17.pdf
TIP115
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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CNY172SR2VM cny17f4m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 70V
Case: PDIP6
Max. off-state voltage: 6V
Number of pins: 6
Load current: 60mA
Manufacturer series: CNY17
Operating temperature: -40...100°C
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.28 EUR
Mindestbestellmenge: 1000
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CNY172TVM cny17f4m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.25 EUR
Mindestbestellmenge: 1000
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CNY172SM cny17f4m-d.pdf FAIR-S-A0001784634-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.25 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
MARNLV14051BDR2G
Hersteller: ONSEMI
Category: Unclassified
Description: MARNLV14051BDR2G
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.012 EUR
Mindestbestellmenge: 10000
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FDS86141 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9FFE92E2B6259&compId=FDS86141.pdf?ci_sign=081af4a1e1f0dfe562a326622bb881412132cb43
FDS86141
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 16.5nC
On-state resistance: 40mΩ
Power dissipation: 2.5W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSZ5238BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5238BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
Mindestbestellmenge: 97
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MMSZ5238B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5238B
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
547+0.13 EUR
Mindestbestellmenge: 547
Im Einkaufswagen  Stück im Wert von  UAH
SZMMSZ5238BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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FDS4672A fds4672a-d.pdf
FDS4672A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
74+0.97 EUR
100+0.9 EUR
Mindestbestellmenge: 46
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SS33 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward impulse current: 100A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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RGP10K RGP10M-D.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 500ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 0.5µs
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: DO41
Produkt ist nicht verfügbar
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MMQA12VT1G mmqa-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Type of diode: TVS array
Max. off-state voltage: 9.1V
Semiconductor structure: common anode; quadruple
Case: SC74-6
Mounting: SMD
Kind of package: reel; tape
Application: universal
Number of channels: 4
Tolerance: ±5%
Breakdown voltage: 12V
Version: ESD
Produkt ist nicht verfügbar
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ESD9B5.0ST5G pVersion=0046&contRep=ZT&docId=005056AB752F1EE786888FB7ACA94745&compId=ESD9B5.0ST5G.PDF?ci_sign=5ddc4e572c09119a74a776a768fd7b638ac2fef5
ESD9B5.0ST5G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.3W
Leakage current: 0.1µA
Version: ESD
Max. forward impulse current: 15A
auf Bestellung 11712 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1042+0.069 EUR
1352+0.053 EUR
2552+0.028 EUR
3356+0.021 EUR
3624+0.02 EUR
3876+0.018 EUR
Mindestbestellmenge: 625
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SZESD9B5.0ST5G esd9b-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVDTA114EM3T5G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTA114EM3T5G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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DTA114YM3T5G dta114y-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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DTC114TM3T5G dtc114t-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 160...350
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTA114YM3T5G dta114y-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTC114YM3T5G dtc114y-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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NDS352AP pVersion=0046&contRep=ZT&docId=E20E0B63306A91F1A303005056AB0C4F&compId=NDS352AP.pdf?ci_sign=998d96103698b14ff6cae56ff7c2b7792e3efca8
NDS352AP
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
163+0.44 EUR
215+0.33 EUR
242+0.3 EUR
283+0.25 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
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