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NCP1246ALD065R2G ONSEMI ncp1246-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Case: SO7
Mounting: SMD
Output current: 500...800mA
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Operating voltage: 8.9...26.5V DC
Topology: flyback
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FDMC8321LDC ONSEMI fdmc8321ldc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
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NCP361SNT1G NCP361SNT1G ONSEMI NCP361.pdf Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
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NCP711ASN300T1G NCP711ASN300T1G ONSEMI ncp711-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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M74VHC1G126DTT1G M74VHC1G126DTT1G ONSEMI mc74vhc1g126-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Case: TSOP5
Mounting: SMD
Manufacturer series: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Technology: CMOS
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NCP551SN50T1G NCP551SN50T1G ONSEMI ncp551-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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BD241CG BD241CG ONSEMI BD241C-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 2.5
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BD787G BD787G ONSEMI BD787-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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BCX19LT1G BCX19LT1G ONSEMI BCX1xLT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
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BCW71 BCW71 ONSEMI bcw71-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
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FDD86102LZ FDD86102LZ ONSEMI FDD86102LZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
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MMBD4148se MMBD4148se ONSEMI MMBD4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
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MMBD4148CA MMBD4148CA ONSEMI mmbd4148se-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 5µA
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SMMSD4148T3G SMMSD4148T3G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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MC33064P-5G MC33064P-5G ONSEMI MC33064_MC34064_NCV33064.PDF description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
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MC34064D-5G MC34064D-5G ONSEMI mc34064-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: 0...70°C
Active logical level: low
Threshold on-voltage: 4.61V
Kind of RESET output: open drain
Supply voltage: 6.5V
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BZX85C18 BZX85C18 ONSEMI BZX85C10.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Produkt ist nicht verfügbar
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MJD122T4G MJD122T4G ONSEMI MJD122_MJD127.PDF Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 4MHz
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MJD127G MJD127G ONSEMI MJD122_MJD127.PDF Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
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MJD127T4G MJD127T4G ONSEMI mjd122.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
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MJD122G MJD122G ONSEMI MJD122_MJD127.PDF Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
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NJVMJD122T4G NJVMJD122T4G ONSEMI mjd122-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD127T4G NJVMJD127T4G ONSEMI mjd122-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
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NCP4305DDR2G NCP4305DDR2G ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7.8...37V DC
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NCP4305DMNTWG NCP4305DMNTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7.8...37V DC
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NCP4305DMTTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7.8...37V DC
Produkt ist nicht verfügbar
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CAT25256VI-GT3 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256XI-T2 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NSVDTC143ZET1G ONSEMI dtc143z-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...200
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MC10EP16DG ONSEMI mc10ep16-d.pdf Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
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NDP6060L NDP6060L ONSEMI NDB6060L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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NDS352AP NDS352AP ONSEMI NDS352AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±20V
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FDV304P FDV304P ONSEMI FDV304P.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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FDV301N FDV301N ONSEMI FDV301N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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FDV303N FDV303N ONSEMI FDV303N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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FDN360P FDN360P ONSEMI FDN360P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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FDC658AP FDC658AP ONSEMI FDC658AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.1nC
Features of semiconductor devices: logic level
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FDN327N FDN327N ONSEMI FDN327N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
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ADT7461ARZ-REEL ONSEMI ADT7461-D.PDF Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
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20414-009-XTD ONSEMI Category: Unclassified
Description: 20414-009-XTD
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MBR360RLG MBR360RLG ONSEMI MBR360RLG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
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FGY160T65SPD-F085 ONSEMI fgy160t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 163nC
Pulsed collector current: 480A
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AFGY160T65SPD-B4 ONSEMI AFGY160T65SPD-B4-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
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FCD360N65S3R0 FCD360N65S3R0 ONSEMI FCD360N65S3R0-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Power dissipation: 83W
Case: DPAK
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Semiconductor structure: single transistor
On-state resistance: 0.36Ω
Technology: PowerTrench®
Drain current: 10A
Produkt ist nicht verfügbar
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FCPF360N65S3R0L-F154 FCPF360N65S3R0L-F154 ONSEMI FCPF360N65S3R0L-F154-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Power dissipation: 27W
Case: TO220
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
On-state resistance: 0.36Ω
Polarisation: N
Technology: PowerTrench®
Drain current: 10A
Produkt ist nicht verfügbar
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MM74HCT574WM MM74HCT574WM ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
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74VHCT574AM 74VHCT574AM ONSEMI 74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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74VHCT574AMTC 74VHCT574AMTC ONSEMI 74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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74VHCT574AMTCX 74VHCT574AMTCX ONSEMI 74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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MM74HCT574WMX MM74HCT574WMX ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MC74HCT574ADTR2G MC74HCT574ADTR2G ONSEMI MC74HCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
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MC74HCT574ADWR2G ONSEMI MC74HCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MM74HCT574MTCX MM74HCT574MTCX ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MM74HCT574SJX MM74HCT574SJX ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MC74VHCT574ADTRG MC74VHCT574ADTRG ONSEMI MC74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MC74VHCT574ADWG MC74VHCT574ADWG ONSEMI MC74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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MC74VHCT574ADWRG ONSEMI MC74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MOC3011M MOC3011M ONSEMI MOC3011M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Case: DIP6
Manufacturer series: MOC301XM
Kind of output: triac
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optotriac
Output voltage: 400V
Number of channels: 1
Trigger current: 60mA
Mounting: THT
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MOC3011SR2M MOC3011SR2M ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Case: PDIP6
Manufacturer series: MOC301XM
Slew rate: 1kV/μs
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optotriac
Output voltage: 250V
Number of channels: 1
Trigger current: 5mA
Mounting: SMD
auf Bestellung 990 Stücke:
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NCP1246ALD065R2G ncp1246-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Case: SO7
Mounting: SMD
Output current: 500...800mA
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Operating voltage: 8.9...26.5V DC
Topology: flyback
Produkt ist nicht verfügbar
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FDMC8321LDC fdmc8321ldc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
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NCP361SNT1G NCP361.pdf
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
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NCP711ASN300T1G ncp711-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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M74VHC1G126DTT1G mc74vhc1g126-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Case: TSOP5
Mounting: SMD
Manufacturer series: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Technology: CMOS
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NCP551SN50T1G ncp551-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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BD241CG BD241C-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 2.5
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BD787G BD787-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
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BCX19LT1G BCX1xLT1G.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
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BCW71 bcw71-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
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FDD86102LZ FDD86102LZ.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
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MMBD4148se MMBD4148.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
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MMBD4148CA mmbd4148se-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 5µA
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SMMSD4148T3G mmsd4148t1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MC33064P-5G description MC33064_MC34064_NCV33064.PDF
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
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MC34064D-5G mc34064-d.pdf
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: 0...70°C
Active logical level: low
Threshold on-voltage: 4.61V
Kind of RESET output: open drain
Supply voltage: 6.5V
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BZX85C18 BZX85C10.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Produkt ist nicht verfügbar
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MJD122T4G MJD122_MJD127.PDF
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 4MHz
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MJD127G MJD122_MJD127.PDF
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
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MJD127T4G mjd122.pdf
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
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MJD122G MJD122_MJD127.PDF
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
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NJVMJD122T4G mjd122-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD127T4G mjd122-d.pdf
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP4305DDR2G ncp4305-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7.8...37V DC
Produkt ist nicht verfügbar
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NCP4305DMNTWG ncp4305-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7.8...37V DC
Produkt ist nicht verfügbar
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NCP4305DMTTWG ncp4305-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7.8...37V DC
Produkt ist nicht verfügbar
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CAT25256VI-GT3 CAT25256-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAT25256YI-GT3 CAT25256-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAT25256XI-T2 CAT25256-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVDTC143ZET1G dtc143z-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...200
Produkt ist nicht verfügbar
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MC10EP16DG mc10ep16-d.pdf
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
Produkt ist nicht verfügbar
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NDP6060L NDB6060L.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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NDS352AP NDS352AP.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±20V
auf Bestellung 2809 Stücke:
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FDV304P FDV304P.PDF
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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FDV301N FDV301N.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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FDV303N FDV303N.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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FDN360P FDN360P.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4580 Stücke:
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FDC658AP FDC658AP.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.1nC
Features of semiconductor devices: logic level
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FDN327N FDN327N.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
auf Bestellung 1556 Stücke:
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ADT7461ARZ-REEL ADT7461-D.PDF
Hersteller: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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20414-009-XTD
Hersteller: ONSEMI
Category: Unclassified
Description: 20414-009-XTD
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MBR360RLG MBR360RLG.PDF
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
auf Bestellung 3489 Stücke:
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FGY160T65SPD-F085 fgy160t65spd-f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 163nC
Pulsed collector current: 480A
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AFGY160T65SPD-B4 AFGY160T65SPD-B4-D.PDF
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Produkt ist nicht verfügbar
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FCD360N65S3R0 FCD360N65S3R0-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Power dissipation: 83W
Case: DPAK
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Semiconductor structure: single transistor
On-state resistance: 0.36Ω
Technology: PowerTrench®
Drain current: 10A
Produkt ist nicht verfügbar
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FCPF360N65S3R0L-F154 FCPF360N65S3R0L-F154-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Power dissipation: 27W
Case: TO220
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
On-state resistance: 0.36Ω
Polarisation: N
Technology: PowerTrench®
Drain current: 10A
Produkt ist nicht verfügbar
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MM74HCT574WM MM74HCT573-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
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74VHCT574AM 74VHCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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74VHCT574AMTC 74VHCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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74VHCT574AMTCX 74VHCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MM74HCT574WMX MM74HCT573-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MC74HCT574ADTR2G MC74HCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MC74HCT574ADWR2G MC74HCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MM74HCT574MTCX MM74HCT573-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MM74HCT574SJX MM74HCT573-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MC74VHCT574ADTRG MC74VHCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MC74VHCT574ADWG MC74VHCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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MC74VHCT574ADWRG MC74VHCT574A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MOC3011M MOC3011M.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Case: DIP6
Manufacturer series: MOC301XM
Kind of output: triac
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optotriac
Output voltage: 400V
Number of channels: 1
Trigger current: 60mA
Mounting: THT
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
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MOC3011SR2M moc3023m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Case: PDIP6
Manufacturer series: MOC301XM
Slew rate: 1kV/μs
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optotriac
Output voltage: 250V
Number of channels: 1
Trigger current: 5mA
Mounting: SMD
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH