Foto | Bezeichnung | Hersteller | Beschreibung |
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MC74HC244ADWR2G | ONSEMI |
![]() tariffCode: 85423990 Logik-IC-Sockelnummer: 74244 rohsCompliant: YES Logik-IC-Familie: 74HC hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: SOIC MSL: MSL 3 - 168 Stunden usEccn: EAR99 Betriebstemperatur, min.: -55°C Versorgungsspannung, min.: 2V Logikfamilie / Sockelnummer: 74HC244 euEccn: NLR Logikbaustein: Puffer/Leitungstreiber, nicht invertierend Anzahl der Pins: 20Pin(s) Produktpalette: - productTraceability: No Versorgungsspannung, max.: 6V Betriebstemperatur, max.: 125°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 821 Stücke: Lieferzeit 14-21 Tag (e) |
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FSA3157P6X | ONSEMI |
![]() tariffCode: 85423990 IC-Funktion: Analoger Schalter, analoger Multiplexer/Demultiplexer rohsCompliant: YES IC-Montage: Oberflächenmontage Versorgungsspannung: 1.65V bis 5.5V Einschaltwiderstand, max.: 50ohm Einschaltwiderstand, typ.: 7ohm hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: SC-70 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Anzahl der Kanäle: 2Kanäle Betriebstemperatur, min.: -40°C Multiplexer/Demultiplexer-Konfiguration: 2:1 Schalterkonfiguration: SPDT euEccn: NLR Stromversorgung: Einfache Versorgung Anzahl der Pins: 6Pin(s) Produktpalette: Compute Module 3+ Series productTraceability: No Schnittstellen: - Betriebstemperatur, max.: 85°C SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 46163 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14050BDR2G | ONSEMI |
![]() tariffCode: 85423990 Logik-IC-Sockelnummer: 4050 rohsCompliant: YES Logik-IC-Familie: MC140 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: SOIC MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -55°C Versorgungsspannung, min.: 3V Logikfamilie / Sockelnummer: MC14050 euEccn: NLR Logikbaustein: Puffer, nicht invertierend Anzahl der Pins: 16Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 18V Betriebstemperatur, max.: 125°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1754 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCA20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCA20N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FCB20N60FTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FCB20N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCP20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DG | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Operating temperature: -40...85°C Case: SO8 Supply voltage: 6.1...18V DC Output voltage: 0.8...11.2V Output current: -1.5...1.5A Mounting: SMD Impulse rise time: 30ns Pulse fall time: 30ns Number of channels: 2 Kind of output: non-inverting Kind of package: tube Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Operating temperature: -40...85°C Case: SO8 Supply voltage: 6.1...18V DC Output voltage: 0.8...11.2V Output current: -1.5...1.5A Mounting: SMD Impulse rise time: 30ns Pulse fall time: 30ns Number of channels: 2 Kind of output: non-inverting Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver |
auf Bestellung 1253 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BD1G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Power: 702mW |
auf Bestellung 1102 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BD1R2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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UC3843BDR2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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UC3843BNG | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Power: 1.25W |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BVD1R2G | ONSEMI |
![]() ![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW |
auf Bestellung 2071 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BVDR2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW |
auf Bestellung 1955 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC573ADTG | ONSEMI |
![]() ![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HC Manufacturer series: HC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74HC573ADTR2G | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Trigger: level-triggered Manufacturer series: HC Technology: CMOS |
Produkt ist nicht verfügbar |
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MC74HC573ADWG | ONSEMI |
![]() ![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Manufacturer series: HC Supply voltage: 2...6V DC Type of integrated circuit: digital Number of channels: 8 Kind of output: 3-state; non-inverting Trigger: level-triggered Technology: CMOS Kind of integrated circuit: D latch |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC573ADWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HC Manufacturer series: HC Technology: CMOS |
Produkt ist nicht verfügbar |
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MM74HC573MTC | ONSEMI |
![]() ![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -40...85°C Trigger: level-triggered Kind of output: 3-state |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC573MTCX | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS Quiescent current: 160µA |
Produkt ist nicht verfügbar |
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MM74HC573WM | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS Quiescent current: 80µA |
Produkt ist nicht verfügbar |
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MM74HC573WMX | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS |
Produkt ist nicht verfügbar |
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BAS16DXV6T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double independent Capacitance: 2pF Case: SOT563 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Power dissipation: 0.5W Kind of package: reel; tape Leakage current: 50µA |
auf Bestellung 2426 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16HT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Semiconductor structure: single diode Case: SOD323 Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 27129 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH077N65F-F085 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FCH077N65F-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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LM311DR2G | ONSEMI |
![]() Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8 Kind of comparator: universal Mounting: SMT Case: SO8 Operating voltage: 5...30V Type of integrated circuit: comparator Number of comparators: 1 Delay time: 200ns |
auf Bestellung 1143 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP18N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817-40LT1G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 17549 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817-40LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 5762 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP102G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 2W Case: TO220AB Current gain: 20000 Mounting: THT Kind of package: tube Heatsink thickness: 1.15...1.39mm |
Produkt ist nicht verfügbar |
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BC857ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 6407 Stücke: Lieferzeit 14-21 Tag (e) |
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BC548BTA | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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BC548CTA | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 420...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FOD814A | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD814A3SD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD814ASD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137M | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 2.5kV/μs Manufacturer series: 6N137M Supply voltage: 4.5...5.5V DC CTR@If: 19-50%@16mA |
auf Bestellung 636 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137SDM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 10kV/μs Manufacturer series: 6N137M CTR@If: 19-50%@16mA |
auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD340G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Case: DPAK Frequency: 10MHz Collector-emitter voltage: 300V Current gain: 30...240 Collector current: 0.5A Type of transistor: NPN Power dissipation: 15W Polarisation: bipolar Kind of package: tube Mounting: SMD |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE340G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Case: TO225 Collector-emitter voltage: 300V Current gain: 30...240 Collector current: 0.5A Type of transistor: NPN Power dissipation: 20W Polarisation: bipolar Kind of package: bulk Mounting: THT |
auf Bestellung 774 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14HE | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
auf Bestellung 763 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVBSS14HE | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2997 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3845BD1G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: boost; flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...48% Kind of package: tube Power: 702mW Part status: Not recommended for new designs |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 80...250 Mounting: THT Kind of package: bulk Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5551TA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TF | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5551TFR | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP50N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35.4A Power dissipation: 120W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RFP50N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 131W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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SS36FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 2198 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVBSS36FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TIP41CG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 15...75 Frequency: 3MHz |
auf Bestellung 266 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP31AG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP31BG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TIP31CG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC244ADWR2G |
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Hersteller: ONSEMI
Description: ONSEMI - MC74HC244ADWR2G - Logik, Puffer / Leitungstreiber, Empfänger, 74HC244, 2V bis 6V, SOIC-20
tariffCode: 85423990
Logik-IC-Sockelnummer: 74244
rohsCompliant: YES
Logik-IC-Familie: 74HC
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Versorgungsspannung, min.: 2V
Logikfamilie / Sockelnummer: 74HC244
euEccn: NLR
Logikbaustein: Puffer/Leitungstreiber, nicht invertierend
Anzahl der Pins: 20Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 6V
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (27-Jun-2024)
Description: ONSEMI - MC74HC244ADWR2G - Logik, Puffer / Leitungstreiber, Empfänger, 74HC244, 2V bis 6V, SOIC-20
tariffCode: 85423990
Logik-IC-Sockelnummer: 74244
rohsCompliant: YES
Logik-IC-Familie: 74HC
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Versorgungsspannung, min.: 2V
Logikfamilie / Sockelnummer: 74HC244
euEccn: NLR
Logikbaustein: Puffer/Leitungstreiber, nicht invertierend
Anzahl der Pins: 20Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 6V
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 821 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FSA3157P6X |
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Hersteller: ONSEMI
Description: ONSEMI - FSA3157P6X - SCHALTER,ANALOG, SPDT, SC70-5
tariffCode: 85423990
IC-Funktion: Analoger Schalter, analoger Multiplexer/Demultiplexer
rohsCompliant: YES
IC-Montage: Oberflächenmontage
Versorgungsspannung: 1.65V bis 5.5V
Einschaltwiderstand, max.: 50ohm
Einschaltwiderstand, typ.: 7ohm
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: SC-70
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: -40°C
Multiplexer/Demultiplexer-Konfiguration: 2:1
Schalterkonfiguration: SPDT
euEccn: NLR
Stromversorgung: Einfache Versorgung
Anzahl der Pins: 6Pin(s)
Produktpalette: Compute Module 3+ Series
productTraceability: No
Schnittstellen: -
Betriebstemperatur, max.: 85°C
SVHC: No SVHC (19-Jan-2021)
Description: ONSEMI - FSA3157P6X - SCHALTER,ANALOG, SPDT, SC70-5
tariffCode: 85423990
IC-Funktion: Analoger Schalter, analoger Multiplexer/Demultiplexer
rohsCompliant: YES
IC-Montage: Oberflächenmontage
Versorgungsspannung: 1.65V bis 5.5V
Einschaltwiderstand, max.: 50ohm
Einschaltwiderstand, typ.: 7ohm
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: SC-70
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: -40°C
Multiplexer/Demultiplexer-Konfiguration: 2:1
Schalterkonfiguration: SPDT
euEccn: NLR
Stromversorgung: Einfache Versorgung
Anzahl der Pins: 6Pin(s)
Produktpalette: Compute Module 3+ Series
productTraceability: No
Schnittstellen: -
Betriebstemperatur, max.: 85°C
SVHC: No SVHC (19-Jan-2021)
auf Bestellung 46163 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MC14050BDR2G |
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Hersteller: ONSEMI
Description: ONSEMI - MC14050BDR2G - Puffer, MC14050, 3V bis 18V, SOIC-16
tariffCode: 85423990
Logik-IC-Sockelnummer: 4050
rohsCompliant: YES
Logik-IC-Familie: MC140
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Versorgungsspannung, min.: 3V
Logikfamilie / Sockelnummer: MC14050
euEccn: NLR
Logikbaustein: Puffer, nicht invertierend
Anzahl der Pins: 16Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Versorgungsspannung, max.: 18V
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (27-Jun-2024)
Description: ONSEMI - MC14050BDR2G - Puffer, MC14050, 3V bis 18V, SOIC-16
tariffCode: 85423990
Logik-IC-Sockelnummer: 4050
rohsCompliant: YES
Logik-IC-Familie: MC140
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Versorgungsspannung, min.: 3V
Logikfamilie / Sockelnummer: MC14050
euEccn: NLR
Logikbaustein: Puffer, nicht invertierend
Anzahl der Pins: 16Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Versorgungsspannung, max.: 18V
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1754 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FCA20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCA20N60F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCB20N60FTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCB20N60TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCP20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
MC33152DG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: SO8
Supply voltage: 6.1...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: SMD
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: SO8
Supply voltage: 6.1...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: SMD
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.87 EUR |
41+ | 1.77 EUR |
65+ | 1.10 EUR |
69+ | 1.04 EUR |
MC33152DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: SO8
Supply voltage: 6.1...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: SMD
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: SO8
Supply voltage: 6.1...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: SMD
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: non-inverting
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 1253 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.23 EUR |
59+ | 1.23 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
100+ | 0.96 EUR |
500+ | 0.94 EUR |
UC3843BD1G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 702mW
auf Bestellung 1102 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
76+ | 0.95 EUR |
162+ | 0.44 EUR |
171+ | 0.42 EUR |
588+ | 0.41 EUR |
UC3843BD1R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UC3843BDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Produkt ist nicht verfügbar
Im Einkaufswagen
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UC3843BNG |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.30 EUR |
64+ | 1.13 EUR |
93+ | 0.77 EUR |
99+ | 0.73 EUR |
UC3843BVD1R2G | ![]() |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
auf Bestellung 2071 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.90 EUR |
101+ | 0.71 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
500+ | 0.40 EUR |
1000+ | 0.39 EUR |
UC3843BVDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
93+ | 0.78 EUR |
157+ | 0.46 EUR |
166+ | 0.43 EUR |
1000+ | 0.41 EUR |
MC74HC573ADTG | ![]() |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC573ADTR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC573ADWG | ![]() |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Manufacturer series: HC
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Technology: CMOS
Kind of integrated circuit: D latch
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Manufacturer series: HC
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Technology: CMOS
Kind of integrated circuit: D latch
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
60+ | 1.20 EUR |
79+ | 0.91 EUR |
113+ | 0.64 EUR |
123+ | 0.58 EUR |
175+ | 0.41 EUR |
186+ | 0.39 EUR |
MC74HC573ADWR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC573MTC |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: level-triggered
Kind of output: 3-state
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: level-triggered
Kind of output: 3-state
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.77 EUR |
16+ | 4.70 EUR |
17+ | 4.45 EUR |
MM74HC573MTCX |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 160µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 160µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC573WM |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 80µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 80µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC573WMX |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS16DXV6T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
auf Bestellung 2426 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
400+ | 0.18 EUR |
467+ | 0.15 EUR |
596+ | 0.12 EUR |
855+ | 0.08 EUR |
905+ | 0.08 EUR |
1000+ | 0.08 EUR |
BAS16HT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 27129 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
532+ | 0.13 EUR |
1471+ | 0.05 EUR |
2858+ | 0.03 EUR |
4762+ | 0.02 EUR |
FCH077N65F-F085 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCH077N65F-F155 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM311DR2G |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Kind of comparator: universal
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
Type of integrated circuit: comparator
Number of comparators: 1
Delay time: 200ns
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Kind of comparator: universal
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
Type of integrated circuit: comparator
Number of comparators: 1
Delay time: 200ns
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
122+ | 0.59 EUR |
145+ | 0.49 EUR |
291+ | 0.25 EUR |
307+ | 0.23 EUR |
500+ | 0.22 EUR |
FDP18N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
24+ | 3.09 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
FDPF18N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.89 EUR |
21+ | 3.40 EUR |
FDPF18N50T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.79 EUR |
24+ | 2.99 EUR |
26+ | 2.83 EUR |
BC817-40LT1G | ![]() |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 17549 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
736+ | 0.10 EUR |
920+ | 0.08 EUR |
1092+ | 0.07 EUR |
1299+ | 0.06 EUR |
2907+ | 0.03 EUR |
3087+ | 0.02 EUR |
9000+ | 0.02 EUR |
BC817-40LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5762 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
633+ | 0.11 EUR |
1055+ | 0.07 EUR |
1289+ | 0.06 EUR |
1887+ | 0.04 EUR |
2513+ | 0.03 EUR |
2660+ | 0.03 EUR |
TIP102G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC857ALT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 6407 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
571+ | 0.13 EUR |
758+ | 0.09 EUR |
1713+ | 0.04 EUR |
2203+ | 0.03 EUR |
3788+ | 0.02 EUR |
4000+ | 0.02 EUR |
BC548BTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
180+ | 0.40 EUR |
BC548CTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD814A |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
78+ | 0.92 EUR |
FOD814A3SD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
123+ | 0.58 EUR |
180+ | 0.40 EUR |
191+ | 0.38 EUR |
FOD814ASD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
6N137M |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
Supply voltage: 4.5...5.5V DC
CTR@If: 19-50%@16mA
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
Supply voltage: 4.5...5.5V DC
CTR@If: 19-50%@16mA
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.02 EUR |
59+ | 1.23 EUR |
74+ | 0.97 EUR |
77+ | 0.93 EUR |
500+ | 0.92 EUR |
6N137SDM |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.30 EUR |
49+ | 1.47 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
200+ | 1.02 EUR |
MJD340G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Case: DPAK
Frequency: 10MHz
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Case: DPAK
Frequency: 10MHz
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Mounting: SMD
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
139+ | 0.51 EUR |
158+ | 0.45 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
MJE340G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Case: TO225
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Case: TO225
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
auf Bestellung 774 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
99+ | 0.72 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
SS14HE |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
214+ | 0.33 EUR |
421+ | 0.17 EUR |
443+ | 0.16 EUR |
NRVBSS14HE |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
159+ | 0.45 EUR |
321+ | 0.22 EUR |
341+ | 0.21 EUR |
UC3845BD1G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Power: 702mW
Part status: Not recommended for new designs
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Power: 702mW
Part status: Not recommended for new designs
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.20 EUR |
2N5551BU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 80...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 80...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N5551TA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
391+ | 0.18 EUR |
496+ | 0.14 EUR |
2N5551TF |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N5551TFR |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
432+ | 0.17 EUR |
634+ | 0.11 EUR |
1183+ | 0.06 EUR |
1250+ | 0.06 EUR |
FQP50N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RFP50N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.45 EUR |
33+ | 2.17 EUR |
37+ | 1.96 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
SS36FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2198 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.70 EUR |
129+ | 0.56 EUR |
264+ | 0.27 EUR |
280+ | 0.26 EUR |
1000+ | 0.25 EUR |
NRVBSS36FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TIP41CG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 15...75
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 15...75
Frequency: 3MHz
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
71+ | 1.01 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
250+ | 0.74 EUR |
TIP31AG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 1.00 EUR |
96+ | 0.75 EUR |
126+ | 0.57 EUR |
132+ | 0.54 EUR |
TIP31BG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
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TIP31CG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |