| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| MC74HC1G14DFT2G | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| LM2575D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Operating temperature: -40...125°C Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14503BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Number of inputs: 1 Kind of package: tube Case: SOIC16 Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| FJV1845FMTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB Case: SOT23; TO236AB Type of transistor: NPN Mounting: SMD Collector current: 50mA Power dissipation: 0.3W Collector-emitter voltage: 120V Current gain: 300...600 Frequency: 50MHz Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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HUF75639P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Mounting: THT Power dissipation: 200W Gate charge: 130nC Polarisation: unipolar Technology: UltraFET® Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 25mΩ |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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| NC7WZ02L8X-L22185 | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Case: DFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Drain current: -65A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 13mΩ Gate-source voltage: ±16V Power dissipation: 107W Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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RB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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M74VHC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: inverter Case: TSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: VHC Kind of gate: NOT Technology: CMOS Number of inputs: 1 Family: VHC Number of channels: 1 Mounting: SMD Supply voltage: 2...5.5V DC |
auf Bestellung 2653 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCXU04DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Case: SOIC14 Operating temperature: -40...85°C Kind of package: tube Kind of gate: NOT Integrated circuit features: tolerates a voltage of 5V on the inputs Technology: CMOS Number of inputs: 1 Family: LCXU Number of channels: 6 Mounting: SMD Supply voltage: 1.5...3.6V DC |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD41CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NJVMJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC100ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC Mounting: SMD Case: SO8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 1 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of inputs: 2 Number of outputs: 1 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC100ELT23DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC Mounting: SMD Case: TSSOP8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 2 Operating temperature: -40...85°C Supply voltage: 4.75...5.25V DC Number of inputs: 4 Number of outputs: 2 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SBAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBR745G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. load current: 7.5A |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSR201MXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Case: X2DFN2 Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Capacitance: 0.15pF Load current: 50mA Max. forward voltage: 0.32V Max. off-state voltage: 2V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCH190N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NVB190N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCP190N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCP190N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTP190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Power dissipation: 162W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 129W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NTPF190N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTPF190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC05ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC05ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC05ADTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC05ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of integrated circuit: hex; inverter Manufacturer series: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC33071DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
auf Bestellung 2327 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC33071ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FCP104N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.104Ω Power dissipation: 357W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FCH104N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Case: TO247 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.104Ω Power dissipation: 357W Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14049UBDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Kind of package: tube Case: SO16 Kind of integrated circuit: buffer; inverting Number of channels: 6 |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14049BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Kind of package: reel; tape Case: SO16 Kind of integrated circuit: buffer; inverting Number of channels: 6 |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14049UBDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: buffer; hex; inverter Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FOD852300W | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4 Mounting: THT Collector-emitter voltage: 300V CTR@If: 1000-15000%@1mA Kind of output: Darlington Insulation voltage: 5kV Type of optocoupler: optocoupler Turn-on time: 0.1ms Case: DIP4 Turn-off time: 20µs Number of channels: 1 |
auf Bestellung 1280 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD452LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape Mounting: SMD Max. off-state voltage: 30V Kind of package: reel; tape Semiconductor structure: double series Case: SOT23 Capacitance: 1.5pF Type of diode: Schottky switching Max. forward voltage: 0.6V |
auf Bestellung 8960 Stücke: Lieferzeit 14-21 Tag (e) |
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BC858BLT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) |
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BC858BLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC858BWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 5990 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV99LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.75V Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74AC05DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: open drain Family: AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NZT660A | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 250...550 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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HCPL2630 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 2.5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 10kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| HCPL2630SDM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; 10Mbps; PDIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Case: PDIP8 Max. off-state voltage: 5V Manufacturer series: HCPL2630M Slew rate: 10kV/μs Transfer rate: 10Mbps Insulation voltage: 5kV Output voltage: -500mV...7V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| HCPL2630S | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Case: Gull wing 8 Max. off-state voltage: 5V Manufacturer series: HCPL2630M Slew rate: 10kV/μs Transfer rate: 10Mbps Insulation voltage: 5kV Turn-on time: 30ns Output voltage: -500mV...7V Turn-off time: 10ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MJF18008G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP Frequency: 13MHz Mounting: THT Collector-emitter voltage: 450V Power dissipation: 45W Polarisation: bipolar Type of transistor: NPN Current gain: 14...34 Kind of package: tube Case: TO220FP Collector current: 8A |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1117ST15T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1117LPSTADT3G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.4V Output voltage: 1.25...15V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...18V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1117LPST18T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...18V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1117LPST50T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMBFJ310 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA Type of transistor: N-JFET Polarisation: unipolar Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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H11G1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: DIP6 Collector-emitter voltage: 100V CTR@If: 100%@10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC74HC1G14DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LM2575D2T-ADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14503BDG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 1
Kind of package: tube
Case: SOIC16
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 1
Kind of package: tube
Case: SOIC16
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.46 EUR |
| FJV1845FMTF |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75639P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 25mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 25mΩ
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.47 EUR |
| 28+ | 3.15 EUR |
| 50+ | 2.23 EUR |
| NC7WZ02L8X-L22185 |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDWS9509L-F085 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB751S40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 28.37 EUR |
| M74VHC1GU04DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Kind of gate: NOT
Technology: CMOS
Number of inputs: 1
Family: VHC
Number of channels: 1
Mounting: SMD
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Kind of gate: NOT
Technology: CMOS
Number of inputs: 1
Family: VHC
Number of channels: 1
Mounting: SMD
Supply voltage: 2...5.5V DC
auf Bestellung 2653 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 200+ | 0.43 EUR |
| 233+ | 0.37 EUR |
| 264+ | 0.32 EUR |
| 343+ | 0.25 EUR |
| 477+ | 0.18 EUR |
| 511+ | 0.17 EUR |
| 556+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| MC74LCXU04DG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Case: SOIC14
Operating temperature: -40...85°C
Kind of package: tube
Kind of gate: NOT
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 1
Family: LCXU
Number of channels: 6
Mounting: SMD
Supply voltage: 1.5...3.6V DC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Case: SOIC14
Operating temperature: -40...85°C
Kind of package: tube
Kind of gate: NOT
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 1
Family: LCXU
Number of channels: 6
Mounting: SMD
Supply voltage: 1.5...3.6V DC
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 1.26 EUR |
| 110+ | 0.77 EUR |
| 141+ | 0.61 EUR |
| 171+ | 0.5 EUR |
| 181+ | 0.48 EUR |
| MJD41CRLG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD41CT4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD41CT4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC100ELT25DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC100ELT23DTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16HT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBAS16HT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR745G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 103+ | 0.83 EUR |
| 117+ | 0.73 EUR |
| NSR201MXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH190N65F-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB190N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP190N65F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP190N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP190N65S3R0 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTB190N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTP190N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTHL190N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT190N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT190N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTPF190N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 45A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTPF190N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC05ADG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC05ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC05ADTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC05ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: hex; inverter
Manufacturer series: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: hex; inverter
Manufacturer series: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33071DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 136+ | 0.63 EUR |
| 145+ | 0.58 EUR |
| MC33071ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP104N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH104N60F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14049UBDG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 197+ | 0.43 EUR |
| 217+ | 0.39 EUR |
| 224+ | 0.38 EUR |
| MC14049BDR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 1.02 EUR |
| MC14049UBDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD852300W |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Mounting: THT
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Kind of output: Darlington
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 0.1ms
Case: DIP4
Turn-off time: 20µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Mounting: THT
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Kind of output: Darlington
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 0.1ms
Case: DIP4
Turn-off time: 20µs
Number of channels: 1
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 129+ | 0.67 EUR |
| 181+ | 0.48 EUR |
| 206+ | 0.42 EUR |
| MMBD452LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT23
Capacitance: 1.5pF
Type of diode: Schottky switching
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT23
Capacitance: 1.5pF
Type of diode: Schottky switching
Max. forward voltage: 0.6V
auf Bestellung 8960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 521+ | 0.17 EUR |
| 610+ | 0.14 EUR |
| 736+ | 0.12 EUR |
| 747+ | 0.11 EUR |
| BC858BLT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.15 EUR |
| 820+ | 0.1 EUR |
| 962+ | 0.088 EUR |
| 1214+ | 0.07 EUR |
| 1454+ | 0.058 EUR |
| 1725+ | 0.049 EUR |
| 2050+ | 0.04 EUR |
| BC858BLT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC858BWT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 521+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| 1038+ | 0.082 EUR |
| 1276+ | 0.067 EUR |
| 1471+ | 0.058 EUR |
| 1684+ | 0.05 EUR |
| 3000+ | 0.042 EUR |
| BAV99LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC05DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NZT660A |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2630 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2630SDM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; 10Mbps; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: HCPL2630M
Slew rate: 10kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Output voltage: -500mV...7V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; 10Mbps; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: HCPL2630M
Slew rate: 10kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Output voltage: -500mV...7V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2630S |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Case: Gull wing 8
Max. off-state voltage: 5V
Manufacturer series: HCPL2630M
Slew rate: 10kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Turn-on time: 30ns
Output voltage: -500mV...7V
Turn-off time: 10ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Case: Gull wing 8
Max. off-state voltage: 5V
Manufacturer series: HCPL2630M
Slew rate: 10kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Turn-on time: 30ns
Output voltage: -500mV...7V
Turn-off time: 10ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MJF18008G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 45W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO220FP
Collector current: 8A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 45W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO220FP
Collector current: 8A
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.11 EUR |
| 35+ | 2.5 EUR |
| 50+ | 2.25 EUR |
| NCP1117ST15T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1117LPSTADT3G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1117LPST18T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1117LPST50T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBFJ310 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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Stück im Wert von UAH
| H11G1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH