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FCH165N60E FCH165N60E ONSEMI fch165n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Case: TO247
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 227W
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FCP165N60E ONSEMI fcp165n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 69A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 69A
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 227W
Produkt ist nicht verfügbar
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NC7NZ34K8X NC7NZ34K8X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BD89C9F5A121BE28&compId=NC7NZ34.pdf?ci_sign=a6286fc5f9507b93c490c327103660397be0fb6f Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; CMOS; SMD; VSOP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: VSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
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NC7NZ34L8X ONSEMI nc7nz34-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
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NC7NZ17L8X ONSEMI nc7nz17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; CMOS; SMD; MicroPak
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
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MC74LVXC3245DTRG MC74LVXC3245DTRG ONSEMI MC74LVXC3245.pdf Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
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NFAM5065L4BT ONSEMI NFAM5065L4BT-D.PDF Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP39 (54x31)
Output current: 50A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13...18.5/0...400V DC
Frequency: 20kHz
Collector-emitter voltage: 650V
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NTP125N65S3H ONSEMI ntp125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVB125N65S3 ONSEMI nvb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCMT125N65S3 ONSEMI fcmt125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVHL025N65S3 ONSEMI nvhl025n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
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ESD8472MUT5G ONSEMI esd8472-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
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SZESD8472MUT5G ONSEMI esd8472-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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CPH6341-TL-W CPH6341-TL-W ONSEMI cph6341-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT26
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -5A
Gate charge: 10nC
On-state resistance: 59mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 264 Stücke:
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107+0.67 EUR
122+0.59 EUR
135+0.53 EUR
193+0.37 EUR
Mindestbestellmenge: 107
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NCV1117DT12RKG NCV1117DT12RKG ONSEMI ncp1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2400 Stücke:
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152+0.47 EUR
171+0.42 EUR
197+0.36 EUR
250+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 152
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MPSA65 MPSA65 ONSEMI MPSA65%2C%20MMBTA65%2C%20PZTA65.pdf MPSA62-66_R1_3-18-14.pdf Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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FDD86102LZ FDD86102LZ ONSEMI FDD86102LZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Power dissipation: 54W
Drain-source voltage: 100V
auf Bestellung 1829 Stücke:
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49+1.47 EUR
57+1.27 EUR
61+1.19 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 49
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FCMT080N65S3 ONSEMI fcmt080n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCMT180N65S3 ONSEMI fcmt180n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBR130T1G MBR130T1G ONSEMI mbr130t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 5908 Stücke:
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313+0.23 EUR
424+0.17 EUR
472+0.15 EUR
589+0.12 EUR
650+0.11 EUR
823+0.087 EUR
1000+0.078 EUR
1500+0.073 EUR
3000+0.065 EUR
Mindestbestellmenge: 313
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KSC5338D KSC5338D ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3FB0A6B4560D6&compId=KSC5338D.PDF?ci_sign=98286afb14d2de725de33a3e7775c5942e7033d3 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Type of transistor: NPN
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Pulsed collector current: 10A
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: integrated anti-parallel diode
Current gain: 15...25
Polarisation: bipolar
Frequency: 11MHz
auf Bestellung 133 Stücke:
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55+1.32 EUR
77+0.94 EUR
91+0.79 EUR
100+0.73 EUR
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NSQA6V8AW5T2G ONSEMI nsqa6v8aw5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Breakdown voltage: 6.4...7.1V
auf Bestellung 2500 Stücke:
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132+0.54 EUR
152+0.47 EUR
211+0.34 EUR
500+0.25 EUR
1000+0.23 EUR
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NZL6V8AXV3T1G ONSEMI nzl5v6axv3t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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NZQA6V8AXV5T1G ONSEMI nzqa5v6axv5-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 20W
Version: ESD
Max. forward impulse current: 1.6A
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SZNSQA6V8AW5T2G ONSEMI nsqa6v8aw5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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1SMB5948BT3G ONSEMI 1smb5913bt3-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
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SZ1SMB5948BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NTMFS0D9N03CGT1G ONSEMI ntmfs0d9n03cg-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D8N03CT1G ONSEMI ntmfs0d8n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D55N03CGT1G ONSEMI ntmfs0d55n03cg-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D5N03CT1G ONSEMI ntmfs0d5n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D6N03CT1G ONSEMI ntmfs0d6n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D7N03CGT1G ONSEMI ntmfs0d7n03cg-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D8N02P1ET1G ONSEMI ntmfs0d8n02p1e-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
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NTMFS0D9N04XMT1G ONSEMI ntmfs0d9n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
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1500+1.27 EUR
Mindestbestellmenge: 1500
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1N5362BG 1N5362BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5362BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FOD8480 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
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FOD8482 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
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FOD8480T ONSEMI fod8480-d.pdf Category: Unclassified
Description: FOD8480T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.56 EUR
Mindestbestellmenge: 1000
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ESD9R3.3ST5G ESD9R3.3ST5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAAB4DB9A3C7E27&compId=ESD9R3.3ST5G-DTE.PDF?ci_sign=92b556fbe3efc2c533d83a05adbd46efca29e1a9 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
172+0.42 EUR
211+0.34 EUR
230+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 122
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ESD9L3.3ST5G ESD9L3.3ST5G ONSEMI esd9l-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
248+0.29 EUR
293+0.24 EUR
582+0.12 EUR
Mindestbestellmenge: 200
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ESD9X3.3ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
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SZESD9C3.3ST5G ONSEMI esd9c3.3s-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SZESD9R3.3ST5G ONSEMI esd9r3.3s-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SZESD9X3.3ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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UESD3.3DT5G ONSEMI uesd3.3dt5g-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Produkt ist nicht verfügbar
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SRDA3.3-4DR2G ONSEMI srda3.3-4-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
Produkt ist nicht verfügbar
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SZUESD3.3DT5G ONSEMI uesd3.3dt5g-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCS21674DMG100R2G ONSEMI ncs21673-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Produkt ist nicht verfügbar
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NUP2202W1T2G ONSEMI nup2202w1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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LP2950CZ-5.0RPG LP2950CZ-5.0RPG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Produkt ist nicht verfügbar
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MBRS140T3G MBRS140T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699BA36AFFF0469&compId=MBRS140T3G.PDF?ci_sign=c115f32124d7ad14f1eb9fe924654f565e69849c Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 4006 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
256+0.28 EUR
317+0.23 EUR
353+0.2 EUR
410+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
2500+0.1 EUR
Mindestbestellmenge: 193
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MBRS2040LT3G MBRS2040LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699BE4129906469&compId=MBRS2040LT3G.PDF?ci_sign=131998e8c21495a1caea9f3c8d6ad23841903be3 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.45V
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
220+0.33 EUR
277+0.26 EUR
307+0.23 EUR
353+0.2 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 162
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MBRS3200T3G MBRS3200T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDFC55B2782FA8&compId=MBRS3200T3G-DTE.PDF?ci_sign=4f2f6745ea73fa4d8e67a0f9f1783e5824d0d12e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
148+0.48 EUR
161+0.44 EUR
197+0.36 EUR
217+0.33 EUR
250+0.29 EUR
500+0.27 EUR
Mindestbestellmenge: 114
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MBRS3201T3G MBRS3201T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE03486E654FA8&compId=MBRS3201T3G-DTE.PDF?ci_sign=4a742271fdd1a0a19ece8565d86a4807f54ee12d description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
99+0.72 EUR
106+0.68 EUR
126+0.57 EUR
136+0.53 EUR
250+0.5 EUR
Mindestbestellmenge: 88
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MBRS410LT3G MBRS410LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE0BCB626FAFA8&compId=MBRS410LT3G-DTE.PDF?ci_sign=08af84a6f94a3f2d4a8656e94b57e621e3473539 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 1244 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
54+1.34 EUR
Mindestbestellmenge: 50
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MBRS230LT3G MBRS230LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDEF8ACA9A4FA8&compId=MBRS230LT3G-DTE.PDF?ci_sign=8ef7af47fe35d19eb29a36eff44c0e3a6e1d5228 description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
auf Bestellung 1801 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
179+0.4 EUR
192+0.37 EUR
243+0.29 EUR
274+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
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MBRS2H100T3G MBRS2H100T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2F002BA74D97820&compId=MBRS2H100T3G.pdf?ci_sign=4b2d94dde7572bfffae8201f380693d09c57f0fb Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
210+0.34 EUR
240+0.3 EUR
Mindestbestellmenge: 162
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MBRS120T3G MBRS120T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A4C818B59D5AC74A&compId=MBRS120T3G.PDF?ci_sign=cd72bece85a6d35c8b787d117b60786adb81cddc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 158 Stücke:
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122+0.59 EUR
158+0.46 EUR
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FCH165N60E fch165n60e-d.pdf
FCH165N60E
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Case: TO247
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 227W
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FCP165N60E fcp165n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 69A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 69A
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 227W
Produkt ist nicht verfügbar
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NC7NZ34K8X pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BD89C9F5A121BE28&compId=NC7NZ34.pdf?ci_sign=a6286fc5f9507b93c490c327103660397be0fb6f
NC7NZ34K8X
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; CMOS; SMD; VSOP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: VSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Produkt ist nicht verfügbar
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NC7NZ34L8X nc7nz34-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Produkt ist nicht verfügbar
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NC7NZ17L8X nc7nz17-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; CMOS; SMD; MicroPak
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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MC74LVXC3245DTRG MC74LVXC3245.pdf
MC74LVXC3245DTRG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
Produkt ist nicht verfügbar
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NFAM5065L4BT NFAM5065L4BT-D.PDF
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP39 (54x31)
Output current: 50A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13...18.5/0...400V DC
Frequency: 20kHz
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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NTP125N65S3H ntp125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVB125N65S3 nvb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT125N65S3 fcmt125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVHL025N65S3 nvhl025n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD8472MUT5G esd8472-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SZESD8472MUT5G esd8472-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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CPH6341-TL-W cph6341-d.pdf
CPH6341-TL-W
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT26
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -5A
Gate charge: 10nC
On-state resistance: 59mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
122+0.59 EUR
135+0.53 EUR
193+0.37 EUR
Mindestbestellmenge: 107
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NCV1117DT12RKG ncp1117-d.pdf
NCV1117DT12RKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
171+0.42 EUR
197+0.36 EUR
250+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
MPSA65 MPSA65%2C%20MMBTA65%2C%20PZTA65.pdf MPSA62-66_R1_3-18-14.pdf
MPSA65
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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FDD86102LZ FDD86102LZ.pdf
FDD86102LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Power dissipation: 54W
Drain-source voltage: 100V
auf Bestellung 1829 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
57+1.27 EUR
61+1.19 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
FCMT080N65S3 fcmt080n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT180N65S3 fcmt180n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR130T1G mbr130t1-d.pdf
MBR130T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 5908 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
424+0.17 EUR
472+0.15 EUR
589+0.12 EUR
650+0.11 EUR
823+0.087 EUR
1000+0.078 EUR
1500+0.073 EUR
3000+0.065 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
KSC5338D pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3FB0A6B4560D6&compId=KSC5338D.PDF?ci_sign=98286afb14d2de725de33a3e7775c5942e7033d3
KSC5338D
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Type of transistor: NPN
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Pulsed collector current: 10A
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: integrated anti-parallel diode
Current gain: 15...25
Polarisation: bipolar
Frequency: 11MHz
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
77+0.94 EUR
91+0.79 EUR
100+0.73 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
NSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Breakdown voltage: 6.4...7.1V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
152+0.47 EUR
211+0.34 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
NZL6V8AXV3T1G nzl5v6axv3t1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NZQA6V8AXV5T1G nzqa5v6axv5-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 20W
Version: ESD
Max. forward impulse current: 1.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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1SMB5948BT3G 1smb5913bt3-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5948BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NTMFS0D9N03CGT1G ntmfs0d9n03cg-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D8N03CT1G ntmfs0d8n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D55N03CGT1G ntmfs0d55n03cg-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D5N03CT1G ntmfs0d5n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D6N03CT1G ntmfs0d6n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D7N03CGT1G ntmfs0d7n03cg-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D8N02P1ET1G ntmfs0d8n02p1e-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D9N04XMT1G ntmfs0d9n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+1.27 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
1N5362BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5362BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5362BRLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FOD8480 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8482 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
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FOD8480T fod8480-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FOD8480T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.56 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ESD9R3.3ST5G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAAB4DB9A3C7E27&compId=ESD9R3.3ST5G-DTE.PDF?ci_sign=92b556fbe3efc2c533d83a05adbd46efca29e1a9
ESD9R3.3ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
172+0.42 EUR
211+0.34 EUR
230+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
ESD9L3.3ST5G esd9l-d.pdf
ESD9L3.3ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
248+0.29 EUR
293+0.24 EUR
582+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
ESD9X3.3ST5G esd9x3.3st5g-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SZESD9C3.3ST5G esd9c3.3s-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SZESD9R3.3ST5G esd9r3.3s-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SZESD9X3.3ST5G esd9x3.3st5g-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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UESD3.3DT5G uesd3.3dt5g-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Produkt ist nicht verfügbar
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SRDA3.3-4DR2G srda3.3-4-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
Produkt ist nicht verfügbar
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SZUESD3.3DT5G uesd3.3dt5g-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCS21674DMG100R2G ncs21673-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Produkt ist nicht verfügbar
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NUP2202W1T2G nup2202w1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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LP2950CZ-5.0RPG lp2950-d.pdf
LP2950CZ-5.0RPG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Produkt ist nicht verfügbar
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MBRS140T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699BA36AFFF0469&compId=MBRS140T3G.PDF?ci_sign=c115f32124d7ad14f1eb9fe924654f565e69849c
MBRS140T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 4006 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
256+0.28 EUR
317+0.23 EUR
353+0.2 EUR
410+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
2500+0.1 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
MBRS2040LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699BE4129906469&compId=MBRS2040LT3G.PDF?ci_sign=131998e8c21495a1caea9f3c8d6ad23841903be3
MBRS2040LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.45V
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
220+0.33 EUR
277+0.26 EUR
307+0.23 EUR
353+0.2 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
MBRS3200T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDFC55B2782FA8&compId=MBRS3200T3G-DTE.PDF?ci_sign=4f2f6745ea73fa4d8e67a0f9f1783e5824d0d12e
MBRS3200T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
148+0.48 EUR
161+0.44 EUR
197+0.36 EUR
217+0.33 EUR
250+0.29 EUR
500+0.27 EUR
Mindestbestellmenge: 114
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MBRS3201T3G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE03486E654FA8&compId=MBRS3201T3G-DTE.PDF?ci_sign=4a742271fdd1a0a19ece8565d86a4807f54ee12d
MBRS3201T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
99+0.72 EUR
106+0.68 EUR
126+0.57 EUR
136+0.53 EUR
250+0.5 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
MBRS410LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE0BCB626FAFA8&compId=MBRS410LT3G-DTE.PDF?ci_sign=08af84a6f94a3f2d4a8656e94b57e621e3473539
MBRS410LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 1244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
54+1.34 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
MBRS230LT3G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDEF8ACA9A4FA8&compId=MBRS230LT3G-DTE.PDF?ci_sign=8ef7af47fe35d19eb29a36eff44c0e3a6e1d5228
MBRS230LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
auf Bestellung 1801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
179+0.4 EUR
192+0.37 EUR
243+0.29 EUR
274+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
MBRS2H100T3G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2F002BA74D97820&compId=MBRS2H100T3G.pdf?ci_sign=4b2d94dde7572bfffae8201f380693d09c57f0fb
MBRS2H100T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
210+0.34 EUR
240+0.3 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
MBRS120T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A4C818B59D5AC74A&compId=MBRS120T3G.PDF?ci_sign=cd72bece85a6d35c8b787d117b60786adb81cddc
MBRS120T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
158+0.46 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
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