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NCP51402MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D07C12B0C740C7&compId=NCP51402.pdf?ci_sign=92f6c13686655bd910fe7a5d5ef37d86d09ebda9 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCP51403MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D09F3A503EE0C7&compId=NCP51403.pdf?ci_sign=1a073962d16e4e6e3ed281d2d9a0ddefa4a85f2a Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCV51400MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCV51400MWTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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FAN251040MNTXG ONSEMI fan251040mn-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
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NCP81140MNTXG ONSEMI ncp81140?pdf= Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
Produkt ist nicht verfügbar
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H11D1SR2M H11D1SR2M ONSEMI moc8204m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 5µs
Type of optocoupler: optocoupler
Number of channels: 1
Max. off-state voltage: 6V
Case: PDIP6
Kind of output: transistor
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
auf Bestellung 1000 Stücke:
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116+0.62 EUR
128+0.56 EUR
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H11D1SR2VM ONSEMI moc8204m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Kind of output: transistor
Max. off-state voltage: 6V
Mounting: SMD
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
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ESD7004MUTAG ONSEMI esd7004-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: HDMI; USB
Number of channels: 4
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SZESD7004MUTAG ONSEMI esd7004-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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LM2903M LM2903M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781970CD057E22259&compId=LM2903.pdf?ci_sign=7068457490158eed79eea0af378225d1807a8c9c Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
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BC547B BC547B ONSEMI BC546%2C%20547%2C%20548%20Rev5.pdf bc546.pdf BC547.pdf FAIR-S-A0000134114-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
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234+0.31 EUR
277+0.26 EUR
360+0.2 EUR
463+0.16 EUR
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MC14052BDR2G MC14052BDR2G ONSEMI mc14051b-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
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MC14052BDG ONSEMI mc14051b-d.pdf Category: Unclassified
Description: MC14052BDG
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NLA9306MU3TAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF40A0D3&compId=NLA9306-D.pdf?ci_sign=a052332648f4e56b8dc690466ac0e70f7928fa39 Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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NLA9306MU3TCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF41E0D3&compId=NLA9306-D.pdf?ci_sign=58f701e020694a03127734c5ac966eca52534d22 Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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NLA9306MUQ1TCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF4320D3&compId=NLA9306-D.pdf?ci_sign=8d80ab8526f5e3ae9bba022959c64228652365f5 Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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NLV9306USG ONSEMI pca9306-d.pdf Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
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FXWA9306L8X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CC52C4E5820&compId=FXWA9306L8X.pdf?ci_sign=0988670e554df64ca464703f8a5fde21dd089fdb Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: MicorPAK8
Kind of output: open drain
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1...5.5V DC
Number of outputs: 2
Number of channels: 2
Number of inputs: 2
Kind of integrated circuit: 3-state; logic level voltage translator
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
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BAT54S ONSEMI bat54x-f.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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NTP055N65S3H ONSEMI ntp055n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3R0 ONSEMI fcp125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP165N65S3 ONSEMI fcp165n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH125N65S3R0-F155 ONSEMI fch125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCH165N65S3R0-F155 ONSEMI fch165n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3 ONSEMI fcp125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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NTB095N65S3HF ONSEMI ntb095n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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SZNSP2201MR6T1G ONSEMI nsp2201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
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MC74AC125DR2G MC74AC125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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MC14512BDR2G MC14512BDR2G ONSEMI mc14512b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Mounting: SMD
Operating temperature: -40...85°C
Family: HEF4000B
Technology: TTL
Type of integrated circuit: digital
Case: SO16
Kind of package: reel; tape
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Supply voltage: 3...18V DC
auf Bestellung 2496 Stücke:
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112+0.64 EUR
158+0.45 EUR
177+0.4 EUR
204+0.35 EUR
250+0.33 EUR
500+0.31 EUR
Mindestbestellmenge: 112
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MMBZ12VALT1G MMBZ12VALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Version: ESD
Type of diode: TVS array
Application: universal
Leakage current: 0.2µA
Number of channels: 2
Max. forward impulse current: 2.35A
Tolerance: ±5%
Max. off-state voltage: 8.5V
Breakdown voltage: 12V
Peak pulse power dissipation: 40W
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451+0.16 EUR
816+0.088 EUR
1250+0.057 EUR
1484+0.048 EUR
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SM24T1G SM24T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: universal
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
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266+0.27 EUR
463+0.15 EUR
848+0.084 EUR
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MC33164P-3G MC33164P-3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: bulk
Number of channels: 1
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GBU8KS GBU8KS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DED390E9DA0D2&compId=GBU8KS.pdf?ci_sign=5be7d17507c4e793bcd91beddc2ac6bee99fee43 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Produkt ist nicht verfügbar
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MUR460 MUR460 ONSEMI MUR4xx.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Produkt ist nicht verfügbar
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FPF2286UCX ONSEMI fpf2286ucx-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Active logical level: high; low
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Integrated circuit features: thermal protection
Case: WLCSP6
Operating temperature: -40...85°C
On-state resistance: 25mΩ
Number of channels: 1
Supply voltage: 2.8...23V DC
Output current: 4A
Produkt ist nicht verfügbar
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MC14023BDR2G MC14023BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
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FDBL0150N80 ONSEMI fdbl0150n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 172nC
Drain current: 300A
On-state resistance: 4.6Ω
Gate-source voltage: ±20V
Power dissipation: 429W
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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FSL538APG ONSEMI FSL538HR-D.PDF Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
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FSL538HPG ONSEMI fsl538hr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
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NUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: CAN
Version: ESD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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SZNUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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GBU6K GBU6K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
62+1.16 EUR
68+1.06 EUR
73+0.99 EUR
100+0.92 EUR
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2N6387G 2N6387G ONSEMI 2n6387-d.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Kind of package: tube
Kind of transistor: Darlington
Case: TO220AB
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 10A
Collector-emitter voltage: 60V
Polarisation: bipolar
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
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NTGS3446T1G ONSEMI ntgs3446-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX84C15 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF98B27300A9E259&compId=BZX84Cxx.pdf?ci_sign=2b64e7148c8f682fa9c3b0aa3b135b1ebc6abd8a Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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FDP42AN15A0 FDP42AN15A0 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE927EA0BAB4259&compId=FDP42AN15A0.pdf?ci_sign=5d81b96fc7857dceb89bd617b8a3b0fff3a3e3ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
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28+2.57 EUR
32+2.29 EUR
50+1.84 EUR
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NC7WZ126L8X ONSEMI nc7wz126-d.pdf FAIRS42897-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Produkt ist nicht verfügbar
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NL27WZ126USG NL27WZ126USG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9D60C7&compId=NL27WZ126USG.pdf?ci_sign=29883c8b6fc18a847af57f0c13002720d62822b6 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; US8
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: US8
Produkt ist nicht verfügbar
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NLV17SZ126DFT2G ONSEMI nl17sz126-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 10uA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SC88A
Produkt ist nicht verfügbar
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NC7SZ126L6X ONSEMI ONSM-S-A0003590303-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.08 EUR
Mindestbestellmenge: 5000
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NC7SZ126L6X-L22175 ONSEMI nc7sz126-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Kind of output: 3-state
Manufacturer series: 7SZ
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SIP6
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.16 EUR
Mindestbestellmenge: 5000
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1N5919BG 1N5919BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 1851 Stücke:
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157+0.46 EUR
187+0.38 EUR
218+0.33 EUR
278+0.26 EUR
410+0.17 EUR
Mindestbestellmenge: 157
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1N5919BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
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FDMA1024NZ ONSEMI fdma1024nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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FDME1024NZT
+1
 		FDME1024NZT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF65B6CDE37E28&compId=FDME1024NZT.pdf?ci_sign=993439da7b8b4701a3a90bf24cfe129a96e3cdfa Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
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NTMFS4C024NT1G ONSEMI ntmfs4c024n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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MJE371G ONSEMI mje371-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 40
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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NSVR0240V2T1G ONSEMI nsr0240v2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
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NCP51402MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D07C12B0C740C7&compId=NCP51402.pdf?ci_sign=92f6c13686655bd910fe7a5d5ef37d86d09ebda9
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Produkt ist nicht verfügbar
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NCP51403MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D09F3A503EE0C7&compId=NCP51403.pdf?ci_sign=1a073962d16e4e6e3ed281d2d9a0ddefa4a85f2a
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Produkt ist nicht verfügbar
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NCV51400MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Produkt ist nicht verfügbar
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NCV51400MWTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Produkt ist nicht verfügbar
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FAN251040MNTXG fan251040mn-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP81140MNTXG ncp81140?pdf=
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
Produkt ist nicht verfügbar
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H11D1SR2M moc8204m-d.pdf
H11D1SR2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 5µs
Type of optocoupler: optocoupler
Number of channels: 1
Max. off-state voltage: 6V
Case: PDIP6
Kind of output: transistor
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
116+0.62 EUR
128+0.56 EUR
Mindestbestellmenge: 62
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H11D1SR2VM moc8204m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Kind of output: transistor
Max. off-state voltage: 6V
Mounting: SMD
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
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ESD7004MUTAG esd7004-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: HDMI; USB
Number of channels: 4
Produkt ist nicht verfügbar
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SZESD7004MUTAG esd7004-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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LM2903M pVersion=0046&contRep=ZT&docId=005056AB752F1ED781970CD057E22259&compId=LM2903.pdf?ci_sign=7068457490158eed79eea0af378225d1807a8c9c
LM2903M
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
Produkt ist nicht verfügbar
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BC547B BC546%2C%20547%2C%20548%20Rev5.pdf bc546.pdf BC547.pdf FAIR-S-A0000134114-1.pdf?t.download=true&u=5oefqw
BC547B
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
234+0.31 EUR
277+0.26 EUR
360+0.2 EUR
463+0.16 EUR
Mindestbestellmenge: 186
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MC14052BDR2G mc14051b-d.pdf
MC14052BDR2G
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Produkt ist nicht verfügbar
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MC14052BDG mc14051b-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: MC14052BDG
auf Bestellung 3308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.32 EUR
Mindestbestellmenge: 240
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NLA9306MU3TAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF40A0D3&compId=NLA9306-D.pdf?ci_sign=a052332648f4e56b8dc690466ac0e70f7928fa39
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Produkt ist nicht verfügbar
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NLA9306MU3TCG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF41E0D3&compId=NLA9306-D.pdf?ci_sign=58f701e020694a03127734c5ac966eca52534d22
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Produkt ist nicht verfügbar
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NLA9306MUQ1TCG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF4320D3&compId=NLA9306-D.pdf?ci_sign=8d80ab8526f5e3ae9bba022959c64228652365f5
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Produkt ist nicht verfügbar
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NLV9306USG pca9306-d.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
Produkt ist nicht verfügbar
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FXWA9306L8X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CC52C4E5820&compId=FXWA9306L8X.pdf?ci_sign=0988670e554df64ca464703f8a5fde21dd089fdb
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: MicorPAK8
Kind of output: open drain
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1...5.5V DC
Number of outputs: 2
Number of channels: 2
Number of inputs: 2
Kind of integrated circuit: 3-state; logic level voltage translator
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Produkt ist nicht verfügbar
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BAT54S bat54x-f.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Produkt ist nicht verfügbar
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NTP055N65S3H ntp055n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP125N65S3R0 fcp125n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP165N65S3 fcp165n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCB125N65S3 fcb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH165N65S3R0-F155 fch165n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP125N65S3 fcp125n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTB095N65S3HF ntb095n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SZNSP2201MR6T1G nsp2201mr6-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
Produkt ist nicht verfügbar
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MC74AC125DR2G mc74ac125-d.pdf
MC74AC125DR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MC14512BDR2G mc14512b-d.pdf
MC14512BDR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Mounting: SMD
Operating temperature: -40...85°C
Family: HEF4000B
Technology: TTL
Type of integrated circuit: digital
Case: SO16
Kind of package: reel; tape
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Supply voltage: 3...18V DC
auf Bestellung 2496 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
158+0.45 EUR
177+0.4 EUR
204+0.35 EUR
250+0.33 EUR
500+0.31 EUR
Mindestbestellmenge: 112
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MMBZ12VALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ12VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Version: ESD
Type of diode: TVS array
Application: universal
Leakage current: 0.2µA
Number of channels: 2
Max. forward impulse current: 2.35A
Tolerance: ±5%
Max. off-state voltage: 8.5V
Breakdown voltage: 12V
Peak pulse power dissipation: 40W
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
391+0.18 EUR
451+0.16 EUR
816+0.088 EUR
1250+0.057 EUR
1484+0.048 EUR
Mindestbestellmenge: 334
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SM24T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5
SM24T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: universal
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
266+0.27 EUR
463+0.15 EUR
848+0.084 EUR
Mindestbestellmenge: 200
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MC33164P-3G description pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab
MC33164P-3G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: bulk
Number of channels: 1
Produkt ist nicht verfügbar
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GBU8KS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DED390E9DA0D2&compId=GBU8KS.pdf?ci_sign=5be7d17507c4e793bcd91beddc2ac6bee99fee43
GBU8KS
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Produkt ist nicht verfügbar
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MUR460 MUR4xx.PDF
MUR460
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Produkt ist nicht verfügbar
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FPF2286UCX fpf2286ucx-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Active logical level: high; low
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Integrated circuit features: thermal protection
Case: WLCSP6
Operating temperature: -40...85°C
On-state resistance: 25mΩ
Number of channels: 1
Supply voltage: 2.8...23V DC
Output current: 4A
Produkt ist nicht verfügbar
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MC14023BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14023BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
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FDBL0150N80 fdbl0150n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 172nC
Drain current: 300A
On-state resistance: 4.6Ω
Gate-source voltage: ±20V
Power dissipation: 429W
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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FSL538APG FSL538HR-D.PDF
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
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FSL538HPG fsl538hr-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
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NUP1105LT1G nup1105l-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: CAN
Version: ESD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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SZNUP1105LT1G nup1105l-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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GBU6K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6K
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
62+1.16 EUR
68+1.06 EUR
73+0.99 EUR
100+0.92 EUR
Mindestbestellmenge: 42
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2N6387G 2n6387-d.pdf
2N6387G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Kind of package: tube
Kind of transistor: Darlington
Case: TO220AB
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 10A
Collector-emitter voltage: 60V
Polarisation: bipolar
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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NTGS3446T1G ntgs3446-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX84C15 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF98B27300A9E259&compId=BZX84Cxx.pdf?ci_sign=2b64e7148c8f682fa9c3b0aa3b135b1ebc6abd8a
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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FDP42AN15A0 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE927EA0BAB4259&compId=FDP42AN15A0.pdf?ci_sign=5d81b96fc7857dceb89bd617b8a3b0fff3a3e3ba
FDP42AN15A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
28+2.57 EUR
32+2.29 EUR
50+1.84 EUR
Mindestbestellmenge: 23
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NC7WZ126L8X nc7wz126-d.pdf FAIRS42897-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Produkt ist nicht verfügbar
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NL27WZ126USG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9D60C7&compId=NL27WZ126USG.pdf?ci_sign=29883c8b6fc18a847af57f0c13002720d62822b6
NL27WZ126USG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; US8
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: US8
Produkt ist nicht verfügbar
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NLV17SZ126DFT2G nl17sz126-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 10uA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SC88A
Produkt ist nicht verfügbar
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NC7SZ126L6X ONSM-S-A0003590303-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.08 EUR
Mindestbestellmenge: 5000
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NC7SZ126L6X-L22175 nc7sz126-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Kind of output: 3-state
Manufacturer series: 7SZ
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SIP6
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.16 EUR
Mindestbestellmenge: 5000
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1N5919BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5919BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
187+0.38 EUR
218+0.33 EUR
278+0.26 EUR
410+0.17 EUR
Mindestbestellmenge: 157
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1N5919BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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FDMA1024NZ fdma1024nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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FDME1024NZT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF65B6CDE37E28&compId=FDME1024NZT.pdf?ci_sign=993439da7b8b4701a3a90bf24cfe129a96e3cdfa
FDME1024NZT
+1
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
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NTMFS4C024NT1G ntmfs4c024n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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MJE371G mje371-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 40
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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NSVR0240V2T1G nsr0240v2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
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