| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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MBRS2040LT3G | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. load current: 4A Kind of package: reel; tape |
auf Bestellung 3670 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 4208 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LVXT4051DR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Supply voltage: 2.5...6V DC Type of integrated circuit: digital Technology: CMOS; TTL Quiescent current: 80µA Kind of package: reel; tape Case: SO16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74LVXT4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Manufacturer series: LVXT Mounting: SMD Operating temperature: -55...125°C Family: LVXT Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Supply voltage: -6...0V DC; 2.5...6V DC Type of integrated circuit: digital Technology: CMOS; TTL Number of inputs: 8 Kind of package: reel; tape Case: TSSOP16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74LVXT4051DTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Operating temperature: -55...125°C Family: LVXT Kind of package: reel; tape Technology: CMOS; TTL Number of inputs: 8 Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Manufacturer series: LVXT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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RFP12N10L | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTTFS012N10MDTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 217A Power dissipation: 62W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 14.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMYS012N10MCLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 283A Power dissipation: 36W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1SMB5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
auf Bestellung 1755 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5226BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
auf Bestellung 29959 Stücke: Lieferzeit 14-21 Tag (e) |
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| FUSB302BMPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps Type of integrated circuit: interface Mounting: SMD DC supply current: 25µA Operating temperature: -40...125°C Version: ESD USB speed: Full Speed Case: WQFN14 Interface: USB Kind of integrated circuit: transceiver Supply voltage: 2.8...5.5V Data transfer rate: 5Gbps |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FUSB302B01MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB Type of integrated circuit: interface Mounting: SMD Operating temperature: -40...85°C USB speed: Full Speed Case: WQFN14 Interface: I2C; USB Kind of integrated circuit: transceiver Supply voltage: 2.7...21V Data transfer rate: 5Gbps |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FUSB302B11MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps Type of integrated circuit: interface Mounting: SMD Operating temperature: -40...85°C Version: Standard; USB 2.0 USB speed: Full Speed Case: WQFN14 Interface: I2C; USB; USB 2.0 Kind of integrated circuit: transceiver Supply voltage: 2.85...5.5V Data transfer rate: 5Gbps |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FUSB302BUCX | ONSEMI |
Category: USB interfaces - integrated circuits Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC Type of integrated circuit: USB interface Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape USB speed: Full Speed Case: WLCSP9 Kind of integrated circuit: USB C controller Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N4003G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4003RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Manufacturer standard package: 5000pcs. |
auf Bestellung 4320 Stücke: Lieferzeit 14-21 Tag (e) |
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MPSA92G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs Max. off-state voltage: 5V Turn-on time: 75ns Turn-off time: 55ns Output voltage: 0...25V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: MOSFET Insulation voltage: 5kV Case: PDIP8 Max. off-state voltage: 5V Manufacturer series: FOD3180 Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC8321LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PQFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 60nC On-state resistance: 4.1mΩ Power dissipation: 56W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 108A Pulsed drain current: 320A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP361SNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor Mounting: SMD Input voltage: 1.2...20V Type of integrated circuit: driver Kind of output: transistor Operating temperature: -40...85°C Application: USB Threshold on-voltage: 3V Case: TSOP5 Number of channels: 1 |
auf Bestellung 1593 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP711ASN300T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A Type of integrated circuit: voltage regulator Output voltage: 3V Kind of package: reel; tape Case: TSOP5 Number of channels: 1 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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M74VHC1G126DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Quiescent current: 40µA Kind of package: reel; tape Case: TSOP5 Kind of integrated circuit: buffer; non-inverting Number of channels: 1 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP551SN50T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 5V Output current: 10mA Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V Manufacturer series: NCP551 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BD241CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 2.5 Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD787G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BCX19LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...600 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW71 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.35W Polarisation: bipolar Type of transistor: NPN Current gain: 110...220 Kind of package: reel; tape Frequency: 330MHz Collector current: 0.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDD86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK Mounting: SMD Power dissipation: 54W Gate charge: 26nC Polarisation: unipolar Technology: PowerTrench® Drain current: 35A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 40mΩ |
auf Bestellung 1134 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD4148se | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 4pF |
auf Bestellung 1727 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD4148CA | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Leakage current: 5µA Capacitance: 4pF |
auf Bestellung 392 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMSD4148T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC33064P-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...6.5V DC Case: TO92 Operating temperature: -40...85°C Mounting: SMD DC supply current: 390µA Maximum output current: 60mA Threshold on-voltage: 4.59V Kind of package: bulk Number of channels: 1 |
auf Bestellung 386 Stücke: Lieferzeit 14-21 Tag (e) |
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MC34064D-5G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: 0...70°C Supply voltage: 6.5V Active logical level: low Kind of RESET output: open drain Threshold on-voltage: 4.61V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZX85C18 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MJD122T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Current gain: 300 Frequency: 4MHz |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD127G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 100...12000 Mounting: SMD Kind of package: tube Kind of transistor: Darlington Frequency: 4MHz |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of transistor: Darlington |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD122G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: tube Current gain: 300 Frequency: 4MHz |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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NJVMJD122T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NJVMJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP4305DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP4305DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP4305DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| CAT25256VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| CAT25256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| CAT25256XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVDTC143ZET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Power dissipation: 0.3W Application: automotive industry Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZX84C33LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
auf Bestellung 14575 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC10EP16DG | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V Type of integrated circuit: digital Kind of integrated circuit: differential; receiver Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Integrated circuit features: differential Technology: ECL Supply voltage: 3...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NDP6060L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB On-state resistance: 40mΩ Mounting: THT Power dissipation: 100W Gate charge: 60nC Polarisation: unipolar Features of semiconductor devices: logic level Drain current: 48A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: tube Case: TO220AB |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS352AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -900mA Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 3nC |
auf Bestellung 3009 Stücke: Lieferzeit 14-21 Tag (e) |
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FDV304P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Drain current: -0.46A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Features of semiconductor devices: logic level |
auf Bestellung 12399 Stücke: Lieferzeit 14-21 Tag (e) |
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FDV301N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 55844 Stücke: Lieferzeit 14-21 Tag (e) |
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FDV303N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 12311 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN360P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 4580 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC658AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 8.1nC Technology: PowerTrench® |
auf Bestellung 477 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 6.3nC Technology: PowerTrench® |
auf Bestellung 1661 Stücke: Lieferzeit 14-21 Tag (e) |
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| ADT7461AARMZ-R | ONSEMI |
Category: Temperature transducers Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V Case: MSOP8 Type of integrated circuit: temperature sensor Operating temperature: -40...120°C Supply voltage: 3...3.6V DC Threshold on-voltage: 2.55V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MBRS2040LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
auf Bestellung 3670 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.75 EUR |
| 156+ | 0.55 EUR |
| 177+ | 0.49 EUR |
| 209+ | 0.4 EUR |
| 237+ | 0.36 EUR |
| 269+ | 0.32 EUR |
| 317+ | 0.27 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.2 EUR |
| SS14 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 4208 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 269+ | 0.32 EUR |
| 305+ | 0.27 EUR |
| 407+ | 0.21 EUR |
| 455+ | 0.19 EUR |
| 532+ | 0.15 EUR |
| 596+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| MC74LVXT4051DR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Supply voltage: 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Quiescent current: 80µA
Kind of package: reel; tape
Case: SO16
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Supply voltage: 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Quiescent current: 80µA
Kind of package: reel; tape
Case: SO16
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74LVXT4051DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Family: LVXT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Number of inputs: 8
Kind of package: reel; tape
Case: TSSOP16
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Family: LVXT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Number of inputs: 8
Kind of package: reel; tape
Case: TSSOP16
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74LVXT4051DTRG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Technology: CMOS; TTL
Number of inputs: 8
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Manufacturer series: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Technology: CMOS; TTL
Number of inputs: 8
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Manufacturer series: LVXT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RFP12N10L |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.13 EUR |
| NTTFS012N10MDTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS012N10MCLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5913BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
auf Bestellung 1755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 248+ | 0.35 EUR |
| 315+ | 0.27 EUR |
| 376+ | 0.23 EUR |
| 443+ | 0.19 EUR |
| 527+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| MMSZ5226BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
auf Bestellung 29959 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 650+ | 0.13 EUR |
| 913+ | 0.093 EUR |
| 1073+ | 0.08 EUR |
| 1345+ | 0.063 EUR |
| 1619+ | 0.052 EUR |
| 1977+ | 0.043 EUR |
| 3000+ | 0.031 EUR |
| 6000+ | 0.03 EUR |
| FUSB302BMPX |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 25µA
Operating temperature: -40...125°C
Version: ESD
USB speed: Full Speed
Case: WQFN14
Interface: USB
Kind of integrated circuit: transceiver
Supply voltage: 2.8...5.5V
Data transfer rate: 5Gbps
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 25µA
Operating temperature: -40...125°C
Version: ESD
USB speed: Full Speed
Case: WQFN14
Interface: USB
Kind of integrated circuit: transceiver
Supply voltage: 2.8...5.5V
Data transfer rate: 5Gbps
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FUSB302B01MPX |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Case: WQFN14
Interface: I2C; USB
Kind of integrated circuit: transceiver
Supply voltage: 2.7...21V
Data transfer rate: 5Gbps
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Case: WQFN14
Interface: I2C; USB
Kind of integrated circuit: transceiver
Supply voltage: 2.7...21V
Data transfer rate: 5Gbps
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FUSB302B11MPX |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Mounting: SMD
Operating temperature: -40...85°C
Version: Standard; USB 2.0
USB speed: Full Speed
Case: WQFN14
Interface: I2C; USB; USB 2.0
Kind of integrated circuit: transceiver
Supply voltage: 2.85...5.5V
Data transfer rate: 5Gbps
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Mounting: SMD
Operating temperature: -40...85°C
Version: Standard; USB 2.0
USB speed: Full Speed
Case: WQFN14
Interface: I2C; USB; USB 2.0
Kind of integrated circuit: transceiver
Supply voltage: 2.85...5.5V
Data transfer rate: 5Gbps
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FUSB302BUCX |
|
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC
Type of integrated circuit: USB interface
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
USB speed: Full Speed
Case: WLCSP9
Kind of integrated circuit: USB C controller
Supply voltage: 2.7...5.5V DC
Category: USB interfaces - integrated circuits
Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC
Type of integrated circuit: USB interface
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
USB speed: Full Speed
Case: WLCSP9
Kind of integrated circuit: USB C controller
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N4003G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 349+ | 0.24 EUR |
| 1N4003RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
auf Bestellung 4320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 481+ | 0.18 EUR |
| 760+ | 0.11 EUR |
| 1029+ | 0.082 EUR |
| 1171+ | 0.073 EUR |
| MPSA92G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD3180 |
|
Hersteller: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Turn-on time: 75ns
Turn-off time: 55ns
Output voltage: 0...25V
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Turn-on time: 75ns
Turn-off time: 55ns
Output voltage: 0...25V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD3180TV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1246ALD065R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8321LDC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP361SNT1G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Mounting: SMD
Input voltage: 1.2...20V
Type of integrated circuit: driver
Kind of output: transistor
Operating temperature: -40...85°C
Application: USB
Threshold on-voltage: 3V
Case: TSOP5
Number of channels: 1
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Mounting: SMD
Input voltage: 1.2...20V
Type of integrated circuit: driver
Kind of output: transistor
Operating temperature: -40...85°C
Application: USB
Threshold on-voltage: 3V
Case: TSOP5
Number of channels: 1
auf Bestellung 1593 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 112+ | 0.76 EUR |
| 124+ | 0.69 EUR |
| 149+ | 0.57 EUR |
| 167+ | 0.51 EUR |
| NCP711ASN300T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 3V
Kind of package: reel; tape
Case: TSOP5
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 3V
Kind of package: reel; tape
Case: TSOP5
Number of channels: 1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 145+ | 0.6 EUR |
| 161+ | 0.54 EUR |
| M74VHC1G126DTT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSOP5
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSOP5
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| NCP551SN50T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Manufacturer series: NCP551
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Manufacturer series: NCP551
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 215+ | 0.39 EUR |
| 249+ | 0.35 EUR |
| 300+ | 0.29 EUR |
| 327+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| 3000+ | 0.23 EUR |
| BD241CG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 2.5
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 2.5
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD787G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCX19LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 521+ | 0.17 EUR |
| 756+ | 0.11 EUR |
| 890+ | 0.095 EUR |
| 1276+ | 0.067 EUR |
| 1475+ | 0.057 EUR |
| 1603+ | 0.054 EUR |
| BCW71 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
auf Bestellung 1134 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.93 EUR |
| 37+ | 2.31 EUR |
| 42+ | 2.05 EUR |
| 57+ | 1.5 EUR |
| 75+ | 1.39 EUR |
| 100+ | 1.31 EUR |
| 250+ | 1.12 EUR |
| 500+ | 1.11 EUR |
| MMBD4148se |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
auf Bestellung 1727 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| 695+ | 0.12 EUR |
| 1017+ | 0.083 EUR |
| 1147+ | 0.074 EUR |
| 1260+ | 0.068 EUR |
| 1348+ | 0.063 EUR |
| 1458+ | 0.058 EUR |
| 1511+ | 0.056 EUR |
| MMBD4148CA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 5µA
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 5µA
Capacitance: 4pF
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 392+ | 0.23 EUR |
| SMMSD4148T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33064P-5G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
auf Bestellung 386 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 95+ | 0.9 EUR |
| 134+ | 0.64 EUR |
| 149+ | 0.57 EUR |
| 171+ | 0.5 EUR |
| MC34064D-5G |
|
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Supply voltage: 6.5V
Active logical level: low
Kind of RESET output: open drain
Threshold on-voltage: 4.61V
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Supply voltage: 6.5V
Active logical level: low
Kind of RESET output: open drain
Threshold on-voltage: 4.61V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C18 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MJD122T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 300
Frequency: 4MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 300
Frequency: 4MHz
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.74 EUR |
| 60+ | 1.43 EUR |
| 68+ | 1.26 EUR |
| 83+ | 1.04 EUR |
| 96+ | 0.89 EUR |
| 111+ | 0.77 EUR |
| 200+ | 0.67 EUR |
| 500+ | 0.58 EUR |
| MJD127G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Kind of transistor: Darlington
Frequency: 4MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Kind of transistor: Darlington
Frequency: 4MHz
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 2.02 EUR |
| 49+ | 1.76 EUR |
| 59+ | 1.45 EUR |
| 94+ | 0.92 EUR |
| MJD127T4G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of transistor: Darlington
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of transistor: Darlington
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 1.54 EUR |
| 74+ | 1.17 EUR |
| 87+ | 0.99 EUR |
| 103+ | 0.83 EUR |
| 128+ | 0.67 EUR |
| 147+ | 0.58 EUR |
| 200+ | 0.51 EUR |
| MJD122G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 300
Frequency: 4MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 300
Frequency: 4MHz
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 1.95 EUR |
| 50+ | 1.71 EUR |
| 68+ | 1.27 EUR |
| 80+ | 1.07 EUR |
| 90+ | 0.95 EUR |
| 96+ | 0.89 EUR |
| 150+ | 0.82 EUR |
| NJVMJD122T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD127T4G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4305DDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP4305DMNTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP4305DMTTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25256VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25256YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25256XI-T2 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTC143ZET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.3W
Application: automotive industry
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.3W
Application: automotive industry
Current gain: 80...200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C33LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
auf Bestellung 14575 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 848+ | 0.1 EUR |
| 1250+ | 0.068 EUR |
| 1511+ | 0.056 EUR |
| 2284+ | 0.037 EUR |
| 2825+ | 0.03 EUR |
| 3165+ | 0.027 EUR |
| 3624+ | 0.024 EUR |
| MC10EP16DG |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDP6060L |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
On-state resistance: 40mΩ
Mounting: THT
Power dissipation: 100W
Gate charge: 60nC
Polarisation: unipolar
Features of semiconductor devices: logic level
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
On-state resistance: 40mΩ
Mounting: THT
Power dissipation: 100W
Gate charge: 60nC
Polarisation: unipolar
Features of semiconductor devices: logic level
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: tube
Case: TO220AB
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.91 EUR |
| 29+ | 2.94 EUR |
| NDS352AP |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
auf Bestellung 3009 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| 117+ | 0.73 EUR |
| 136+ | 0.63 EUR |
| 190+ | 0.45 EUR |
| 218+ | 0.39 EUR |
| 258+ | 0.33 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| FDV304P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Features of semiconductor devices: logic level
auf Bestellung 12399 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.15 EUR |
| 695+ | 0.12 EUR |
| 916+ | 0.093 EUR |
| 1044+ | 0.081 EUR |
| 1352+ | 0.063 EUR |
| 1458+ | 0.058 EUR |
| 3000+ | 0.055 EUR |
| 6000+ | 0.052 EUR |
| 9000+ | 0.051 EUR |
| FDV301N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 55844 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 521+ | 0.17 EUR |
| 603+ | 0.14 EUR |
| 881+ | 0.096 EUR |
| 1053+ | 0.081 EUR |
| 1544+ | 0.055 EUR |
| 1678+ | 0.051 EUR |
| 3000+ | 0.044 EUR |
| 6000+ | 0.042 EUR |
| FDV303N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 12311 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 341+ | 0.25 EUR |
| 476+ | 0.18 EUR |
| 548+ | 0.15 EUR |
| 746+ | 0.11 EUR |
| 1000+ | 0.098 EUR |
| 1500+ | 0.09 EUR |
| 3000+ | 0.079 EUR |
| 6000+ | 0.069 EUR |
| FDN360P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4580 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 129+ | 0.65 EUR |
| 150+ | 0.57 EUR |
| 217+ | 0.39 EUR |
| 253+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| 1500+ | 0.2 EUR |
| 3000+ | 0.19 EUR |
| FDC658AP |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 1.15 EUR |
| 94+ | 0.9 EUR |
| 109+ | 0.79 EUR |
| 154+ | 0.56 EUR |
| 177+ | 0.48 EUR |
| FDN327N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 158+ | 0.54 EUR |
| 177+ | 0.49 EUR |
| 228+ | 0.37 EUR |
| 257+ | 0.33 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.2 EUR |
| 1500+ | 0.19 EUR |
| ADT7461AARMZ-R |
|
Hersteller: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH