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2N6292G 2N6292G ONSEMI 2N6107-D.PDF description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
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NDT2955 NDT2955 ONSEMI NDT2955-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NTF2955T1G NTF2955T1G ONSEMI ntf2955-d.pdf 25e4491841cda416a484c1160d0bf2fb.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NVF2955T1G NVF2955T1G ONSEMI NTF2955.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 154mΩ
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MJD2955G MJD2955G ONSEMI MJD2955_MJD3055.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
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MJE2955TG MJE2955TG ONSEMI mje2955t-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Current gain: 20...100
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SVD2955T4G SVD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
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MJD2955T4G MJD2955T4G ONSEMI mjd2955-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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MJF2955G MJF2955G ONSEMI MJF2955_MJF3055.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
Collector current: 10A
Produkt ist nicht verfügbar
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NCV8535MN500R2G NCV8535MN500R2G ONSEMI ncv8535-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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NCV8535MN330R2G NCV8535MN330R2G ONSEMI ncv8535-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
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MM74HCT14M MM74HCT14M ONSEMI MM74HCT14-DTE.pdf description Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Quiescent current: 10µA
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
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MC74HCT14ADG MC74HCT14ADG ONSEMI MC74HCT14A-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
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MM74HCT14MX MM74HCT14MX ONSEMI MM74HCT14-D.pdf description Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
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MC74HCT14ADR2G MC74HCT14ADR2G ONSEMI MC74HCT14A-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MC74HCT14ADTR2G MC74HCT14ADTR2G ONSEMI MC74HCT14A-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
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MM74HCT14MTCX MM74HCT14MTCX ONSEMI MM74HCT14-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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MC33164D-5R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MC33164D-3R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MC33164DM-3R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MC33164DM-5R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MC34164D-5G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Produkt ist nicht verfügbar
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MC34164D-5R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Produkt ist nicht verfügbar
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NCV4949CDR2G NCV4949CDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV4949CPDR2G NCV4949CPDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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CAT24C16WI-GT3 CAT24C16WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
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N24C16UDTG ONSEMI N24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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N24C16UVTG ONSEMI n24c02-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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NV24C16DTVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16DWVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16MUW3VLTBG ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16SNVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16UVLT2G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C16YI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C16C4ATR ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
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CAT24C16C5ATR ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: WLCSP5
Clock frequency: 400kHz
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CAV24C16WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Memory: 16kb EEPROM
Produkt ist nicht verfügbar
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CAV24C16YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP3066DR2G NCP3066DR2G ONSEMI NCP3066DR2G.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: reel; tape
Integrated circuit features: ON/OFF function
Operating voltage: 3...42V DC
Produkt ist nicht verfügbar
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2SA1417S-TD-E 2SA1417S-TD-E ONSEMI 2SA1417-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 2A
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 140...280
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2SA1416S-TD-E ONSEMI 2sa1416-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
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2SA1418S-TD-E 2SA1418S-TD-E ONSEMI en1788-d.pdf ONSMS36082-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 160V
Power dissipation: 0.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 140...280
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 0.7A
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2SA1419S-TD-E 2SA1419S-TD-E ONSEMI en2007-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
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2SA1418T-TD-E 2SA1418T-TD-E ONSEMI en1788-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 0.7A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 200...400
Produkt ist nicht verfügbar
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2SA1416T-TD-E ONSEMI 2sa1416-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 200...400
Produkt ist nicht verfügbar
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2SA1417T-TD-E 2SA1417T-TD-E ONSEMI EN2006-D.html Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Frequency: 120MHz
Current gain: 200...400
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SZNUP2125WTT1G SZNUP2125WTT1G ONSEMI nup2125-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27÷32V; bidirectional; SC70; reel,tape
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 27...32V
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Type of diode: TVS
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1N5351BRLG 1N5351BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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NUF2101MT1G NUF2101MT1G ONSEMI nuf2101m-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
Type of diode: TVS array
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NL27WZ16DTT1G NL27WZ16DTT1G ONSEMI NL27WZ16DFT2G.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6
Type of integrated circuit: digital
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Technology: CMOS
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NUP4114HMR6T1G NUP4114HMR6T1G ONSEMI NUP4114.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; TSOP6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Application: Ethernet
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NTGS4141NT1G NTGS4141NT1G ONSEMI ntgs4141n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 25mΩ
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NCV1117STAT3G NCV1117STAT3G ONSEMI ncp1117-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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2N6517TA 2N6517TA ONSEMI 2N6517-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.625W
Current gain: 30...200
Kind of package: Ammo Pack
Frequency: 40...200MHz
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2N6517BU 2N6517BU ONSEMI 2N6517-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Current gain: 20...200
Kind of package: bulk
Frequency: 40Hz...200MHz
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MJ21194G MJ21194G ONSEMI MJ21194G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Power dissipation: 250W
Type of transistor: NPN
Current gain: 8...75
Kind of package: in-tray
Case: TO3
Frequency: 4MHz
Collector current: 16A
Mounting: THT
Collector-emitter voltage: 250V
Polarisation: bipolar
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MJW21194G MJW21194G ONSEMI MJW21193G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Power dissipation: 200W
Current gain: 8...80
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Polarisation: bipolar
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NJW21194G NJW21194G ONSEMI NJW21193_4.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO3P
Current gain: 20...70
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Application: automotive industry
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NVMYS014N06CLTWG ONSEMI nvmys014n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMJS1D4N06CLTWG ONSEMI ntmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2N6292G description 2N6107-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
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NDT2955 NDT2955-dte.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NTF2955T1G ntf2955-d.pdf 25e4491841cda416a484c1160d0bf2fb.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NVF2955T1G NTF2955.PDF
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 154mΩ
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MJD2955G MJD2955_MJD3055.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
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MJE2955TG mje2955t-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Current gain: 20...100
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SVD2955T4G ntd2955-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
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MJD2955T4G mjd2955-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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MJF2955G MJF2955_MJF3055.PDF
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
Collector current: 10A
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NCV8535MN500R2G ncv8535-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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NCV8535MN330R2G ncv8535-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
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MM74HCT14M description MM74HCT14-DTE.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Quiescent current: 10µA
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
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MC74HCT14ADG MC74HCT14A-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
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MM74HCT14MX description MM74HCT14-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
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MC74HCT14ADR2G MC74HCT14A-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MC74HCT14ADTR2G MC74HCT14A-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
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MM74HCT14MTCX MM74HCT14-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MC33164D-5R2G mc34164-d.pdf
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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MC33164D-3R2G mc34164-d.pdf
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MC33164DM-3R2G mc34164-d.pdf
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MC33164DM-5R2G mc34164-d.pdf
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MC34164D-5G mc34164-d.pdf
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Produkt ist nicht verfügbar
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MC34164D-5R2G mc34164-d.pdf
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Produkt ist nicht verfügbar
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NCV4949CDR2G ncv4949c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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NCV4949CPDR2G ncv4949c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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CAT24C16WI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
auf Bestellung 308 Stücke:
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N24C16UDTG N24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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N24C16UVTG n24c02-d.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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NV24C16DTVLT3G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16DWVLT3G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16MUW3VLTBG NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16SNVLT3G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NV24C16UVLT2G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C16YI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAT24C16C4ATR CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C16C5ATR CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: WLCSP5
Clock frequency: 400kHz
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CAV24C16WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Memory: 16kb EEPROM
Produkt ist nicht verfügbar
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CAV24C16YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NCP3066DR2G NCP3066DR2G.PDF
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: reel; tape
Integrated circuit features: ON/OFF function
Operating voltage: 3...42V DC
Produkt ist nicht verfügbar
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2SA1417S-TD-E 2SA1417-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 2A
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 140...280
auf Bestellung 711 Stücke:
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2SA1416S-TD-E 2sa1416-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
auf Bestellung 1000 Stücke:
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2SA1418S-TD-E en1788-d.pdf ONSMS36082-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 160V
Power dissipation: 0.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 140...280
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 0.7A
auf Bestellung 262 Stücke:
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2SA1419S-TD-E en2007-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
Produkt ist nicht verfügbar
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2SA1418T-TD-E en1788-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 0.7A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 200...400
Produkt ist nicht verfügbar
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2SA1416T-TD-E 2sa1416-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 200...400
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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2SA1417T-TD-E EN2006-D.html
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Frequency: 120MHz
Current gain: 200...400
Produkt ist nicht verfügbar
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SZNUP2125WTT1G nup2125-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27÷32V; bidirectional; SC70; reel,tape
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 27...32V
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Type of diode: TVS
auf Bestellung 2498 Stücke:
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1N5351BRLG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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NUF2101MT1G nuf2101m-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
Type of diode: TVS array
auf Bestellung 1220 Stücke:
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NL27WZ16DTT1G NL27WZ16DFT2G.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6
Type of integrated circuit: digital
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Technology: CMOS
auf Bestellung 68 Stücke:
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NUP4114HMR6T1G NUP4114.PDF
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; TSOP6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Application: Ethernet
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NTGS4141NT1G ntgs4141n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 25mΩ
auf Bestellung 4615 Stücke:
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NCV1117STAT3G ncp1117-d.pdf
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
auf Bestellung 2363 Stücke:
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2N6517TA 2N6517-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.625W
Current gain: 30...200
Kind of package: Ammo Pack
Frequency: 40...200MHz
auf Bestellung 2065 Stücke:
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2N6517BU 2N6517-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Current gain: 20...200
Kind of package: bulk
Frequency: 40Hz...200MHz
auf Bestellung 3540 Stücke:
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Mindestbestellmenge: 20 Stücke
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MJ21194G MJ21194G.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Power dissipation: 250W
Type of transistor: NPN
Current gain: 8...75
Kind of package: in-tray
Case: TO3
Frequency: 4MHz
Collector current: 16A
Mounting: THT
Collector-emitter voltage: 250V
Polarisation: bipolar
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MJW21194G MJW21193G.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Power dissipation: 200W
Current gain: 8...80
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Polarisation: bipolar
auf Bestellung 93 Stücke:
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NJW21194G NJW21193_4.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO3P
Current gain: 20...70
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Application: automotive industry
auf Bestellung 196 Stücke:
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NVMYS014N06CLTWG nvmys014n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMJS1D4N06CLTWG ntmjs1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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Mindestbestellmenge: 3000 Stücke
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