| Anzahl | Preis |
|---|---|
| 2+ | 1.47 EUR |
| 10+ | 0.91 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.36 EUR |
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Technische Details NTLUS020N03CTAG onsemi
Description: MOSFET N-CH 30V 5.3A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-UDFN (1.6x1.6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 650mW (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTLUS020N03CTAG nach Preis ab 0.41 EUR bis 1.48 EUR
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NTLUS020N03CTAG | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 5.3A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
auf Bestellung 1031 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTLUS020N03CTAG | Hersteller : ON Semiconductor |
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auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) |