Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMC15N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 9A Pulsed drain current: 60A Power dissipation: 35W Case: Power33 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTHL015N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 115A Pulsed drain current: 484A Power dissipation: 321W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: THT Gate charge: 283nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTBG015N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 422A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTH4L015N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 483A Power dissipation: 250W Case: TO247 Gate-source voltage: ±8V On-state resistance: 16mΩ Mounting: THT Gate charge: 283nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTF5P03T3G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Power dissipation: 3.13W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDMS86540 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 82A; Idm: 642A; 96W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 82A Pulsed drain current: 642A Power dissipation: 96W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDMB3900AN | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET Mounting: SMD On-state resistance: 33mΩ Power dissipation: 1.6W Drain current: 7A Gate-source voltage: ±20V Drain-source voltage: 25V Pulsed drain current: 28A Type of transistor: N-MOSFET x2 Case: MicroFET Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Gate charge: 17nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MARNRVB5100MFST1G | ONSEMI |
Category: Contactors - Unclassified Description: MARNRVB5100MFST1G |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR480ERLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 4A; reel,tape; DO201AD; 100ns Mounting: THT Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Reverse recovery time: 100ns Load current: 4A Max. off-state voltage: 0.8kV Case: DO201AD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74HC1G04DFT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 7ns Family: HC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC1G04DFT2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G32DFT1G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G00DFT1G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G00DFT2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G02DFT2G | ONSEMI |
![]() Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G02DTT1G | ONSEMI |
![]() Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G32DFT2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1GU04DFT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1GU04DFT2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1GU04DTT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTMFS5C604NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Drain current: 203A Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 1.2mΩ Power dissipation: 100W Gate-source voltage: ±20V Kind of channel: enhancement Polarisation: unipolar |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C604NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 203A Power dissipation: 100W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LM358AN | ONSEMI |
![]() Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.6V/μs Operating temperature: 0...70°C Voltage supply range: ± 1.5...16V DC; 3...32V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NZ9F18VT5G | ONSEMI |
![]() Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Manufacturer series: NZ9F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NZ9F18VST5G | ONSEMI |
![]() Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Manufacturer series: NZ9F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SZNZ9F18VST5G | ONSEMI |
![]() Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Manufacturer series: NZ9F Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MMBFJ177 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 1.5mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 300Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BCW32LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 1615 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBCW32LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MJW18020G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 30A Power dissipation: 250W Case: TO247-3 Current gain: 14...34 Mounting: THT Kind of package: tube Frequency: 13MHz |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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RGP10G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
RGP10M | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; DO41; 500ns Case: DO41 Mounting: THT Kind of package: reel; tape Reverse recovery time: 0.5µs Semiconductor structure: single diode Load current: 1A Type of diode: rectifying Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
EGP10G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 50ns Max. off-state voltage: 0.4kV Case: DO41 Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: THT Reverse recovery time: 50ns Load current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
EGP10C | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 150V; 1A; reel,tape; DO41; 50ns Max. off-state voltage: 150V Case: DO41 Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: THT Reverse recovery time: 50ns Load current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
EGP10D | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 50ns Max. off-state voltage: 200V Case: DO41 Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: THT Reverse recovery time: 50ns Load current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SB5100 | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape Power dissipation: 5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC33077DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 37MHz; SO8; ±2.5÷18VDC; reel,tape Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 1.5mV Slew rate: 11V/μs Voltage supply range: ± 2.5...18V DC Bandwidth: 37MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: dual Input offset current: 240nA Input bias current: 1.2µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FJV1845FMTF | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.3W Case: SOT23; TO236AB Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MPSA29 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 10k Mounting: THT Kind of package: bulk Frequency: 125MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MPSA29-D26Z | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 10k Mounting: THT Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NTMS4177PR2G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11.4A Pulsed drain current: -46A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NC7SZ175P6X | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: 7SZ Technology: CMOS |
auf Bestellung 2898 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2369ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 0.2A Power dissipation: 0.225/0.3W Collector-emitter voltage: 15V Current gain: 40...120 Polarisation: bipolar Type of transistor: NPN |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2369LT1G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 20...120 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SMMBT2369ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAT54WT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Leakage current: 2µA Power dissipation: 0.2W Max. load current: 0.3A |
auf Bestellung 2650 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBAT54WT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SC70,SOT323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SC70; SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SMS12CT1G | ONSEMI |
![]() Description: Diode: TVS array; 13.3÷15V; 15A; 350W; common anode; TSOP6; Ch: 5 Type of diode: TVS array Breakdown voltage: 13.3...15V Max. forward impulse current: 15A Peak pulse power dissipation: 0.35kW Semiconductor structure: common anode Mounting: SMD Case: TSOP6 Max. off-state voltage: 12V Number of channels: 5 Kind of package: reel; tape Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCV8170BMX330TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; XDFN4; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Output current: 0.15A Number of channels: 1 Output voltage: 3.3V Case: XDFN4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
KSB1151YSTU | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
KSB1151YS | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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FL7760BM6X | ONSEMI |
![]() Description: Driver; DC/DC converter,LED driver; Uin: 8÷60V; Uout: 5V; SOT23-6 Output voltage: 5V Kind of integrated circuit: DC/DC converter; LED driver Case: SOT23-6 Mounting: SMD Operating temperature: -40...125°C Input voltage: 8...60V Frequency: 1MHz Topology: buck Type of integrated circuit: driver |
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MC74AC11DG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
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MC74AC11DR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: AC |
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1N5236B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: 1N52xxB |
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1N5236BTR | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: 1N52xxB |
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FUSB251UCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15 Kind of integrated circuit: USB C controller Case: WLCSP15 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 15µA Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface |
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FUSB307BMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of integrated circuit: USB C controller Case: QFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
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FUSB307BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of integrated circuit: USB C controller Case: QFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
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FUSB308BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of integrated circuit: USB C controller Case: QFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...105°C Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
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FDMC15N06 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL015N065SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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NTBG015N065SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NTH4L015N065SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±8V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±8V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
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NTF5P03T3G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 3.13W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 3.13W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86540 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 82A; Idm: 642A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 82A
Pulsed drain current: 642A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 82A; Idm: 642A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 82A
Pulsed drain current: 642A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMB3900AN |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET
Mounting: SMD
On-state resistance: 33mΩ
Power dissipation: 1.6W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 25V
Pulsed drain current: 28A
Type of transistor: N-MOSFET x2
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 17nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET
Mounting: SMD
On-state resistance: 33mΩ
Power dissipation: 1.6W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 25V
Pulsed drain current: 28A
Type of transistor: N-MOSFET x2
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 17nC
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MARNRVB5100MFST1G |
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.29 EUR |
MUR480ERLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; DO201AD; 100ns
Mounting: THT
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 100ns
Load current: 4A
Max. off-state voltage: 0.8kV
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; DO201AD; 100ns
Mounting: THT
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 100ns
Load current: 4A
Max. off-state voltage: 0.8kV
Case: DO201AD
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MC74HC1G04DFT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 7ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 7ns
Family: HC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
625+ | 0.11 EUR |
770+ | 0.093 EUR |
1270+ | 0.056 EUR |
1534+ | 0.047 EUR |
2067+ | 0.035 EUR |
2137+ | 0.033 EUR |
3000+ | 0.031 EUR |
MC74HC1G04DFT2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
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MC74HC1G32DFT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
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MC74HC1G00DFT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
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MC74HC1G00DFT2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MC74HC1G02DFT2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
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MC74HC1G02DTT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
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MC74HC1G32DFT2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
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MC74HC1GU04DFT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
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MC74HC1GU04DFT2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
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MC74HC1GU04DTT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
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NTMFS5C604NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 203A
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 1.2mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 203A
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 1.2mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Kind of channel: enhancement
Polarisation: unipolar
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.29 EUR |
38+ | 1.9 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
1500+ | 1.47 EUR |
NVMFS5C604NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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LM358AN |
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Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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NZ9F18VT5G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
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NZ9F18VST5G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
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SZNZ9F18VST5G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
Application: automotive industry
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MMBFJ177 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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BCW32LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1615 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
516+ | 0.14 EUR |
804+ | 0.089 EUR |
981+ | 0.073 EUR |
1615+ | 0.044 EUR |
NSVBCW32LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MJW18020G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 30A
Power dissipation: 250W
Case: TO247-3
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 30A
Power dissipation: 250W
Case: TO247-3
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
RGP10G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 150ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 150ns
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RGP10M |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; DO41; 500ns
Case: DO41
Mounting: THT
Kind of package: reel; tape
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Load current: 1A
Type of diode: rectifying
Max. off-state voltage: 1kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; DO41; 500ns
Case: DO41
Mounting: THT
Kind of package: reel; tape
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Load current: 1A
Type of diode: rectifying
Max. off-state voltage: 1kV
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EGP10G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 0.4kV
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 0.4kV
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
Produkt ist nicht verfügbar
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EGP10C |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 150V
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 150V
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
Produkt ist nicht verfügbar
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EGP10D |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 200V
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 200V
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
Produkt ist nicht verfügbar
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SB5100 |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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MC33077DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; SO8; ±2.5÷18VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual
Input offset current: 240nA
Input bias current: 1.2µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; SO8; ±2.5÷18VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual
Input offset current: 240nA
Input bias current: 1.2µA
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FJV1845FMTF |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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MPSA29 |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
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MPSA29-D26Z |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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NTMS4177PR2G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NC7SZ175P6X |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Technology: CMOS
auf Bestellung 2898 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
739+ | 0.097 EUR |
893+ | 0.08 EUR |
985+ | 0.073 EUR |
1078+ | 0.066 EUR |
1155+ | 0.062 EUR |
1220+ | 0.059 EUR |
1238+ | 0.058 EUR |
MMBT2369ALT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 15V
Current gain: 40...120
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 15V
Current gain: 40...120
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
538+ | 0.13 EUR |
797+ | 0.09 EUR |
946+ | 0.076 EUR |
2025+ | 0.035 EUR |
2137+ | 0.033 EUR |
MMBT2369LT1G | ![]() |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SMMBT2369ALT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BAT54WT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Max. load current: 0.3A
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
545+ | 0.13 EUR |
676+ | 0.11 EUR |
1044+ | 0.068 EUR |
1498+ | 0.048 EUR |
2137+ | 0.033 EUR |
2263+ | 0.032 EUR |
NSVBAT54WT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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SMS12CT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 15A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 15A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Version: ESD
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NCV8170BMX330TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; XDFN4; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Case: XDFN4
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; XDFN4; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Case: XDFN4
Produkt ist nicht verfügbar
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KSB1151YSTU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
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KSB1151YS |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
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FL7760BM6X |
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Hersteller: ONSEMI
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uin: 8÷60V; Uout: 5V; SOT23-6
Output voltage: 5V
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 8...60V
Frequency: 1MHz
Topology: buck
Type of integrated circuit: driver
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uin: 8÷60V; Uout: 5V; SOT23-6
Output voltage: 5V
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 8...60V
Frequency: 1MHz
Topology: buck
Type of integrated circuit: driver
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MC74AC11DG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
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MC74AC11DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
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1N5236B |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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1N5236BTR |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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FUSB251UCX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Kind of integrated circuit: USB C controller
Case: WLCSP15
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 15µA
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Kind of integrated circuit: USB C controller
Case: WLCSP15
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 15µA
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
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FUSB307BMPX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB307BVMPX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB308BVMPX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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