| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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MJD112-1G | ONSEMI |
 Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: IPAK Mounting: THT Current gain: 100...12000 |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MJD112RLG | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SS13 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SS13HE | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 25A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SS13FP | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP1010AP100G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 100kHz; Ch: 1; DIP7 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.1A Frequency: 0.1MHz Mounting: THT Case: DIP7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 23Ω Operating voltage: 8.5...10V DC Duty cycle factor: 0...72% Application: SMPS Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC34074DR2G | ONSEMI |
 Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 Mounting: SMT Case: SO14 Kind of package: reel; tape Operating temperature: 0...70°C Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz |
auf Bestellung 1477 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC6675BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 36W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -32A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MMSZ5237B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ5237BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SZMMSZ5237BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| HUF76629D3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: DPAK Gate-source voltage: ±16V On-state resistance: 52mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14106BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Delay time: 100ns Mounting: SMD Kind of gate: NOT Type of integrated circuit: digital Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: hex; 6 |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Delay time: 100ns Mounting: SMD Kind of gate: NOT Type of integrated circuit: digital Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: reel; tape Case: TSSOP14 Family: HEF4000B Number of channels: hex; 6 |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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NLV14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Mounting: SMD Kind of gate: NOT Type of integrated circuit: digital Technology: CMOS Quiescent current: 30µA Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: reel; tape Case: TSSOP14 Number of channels: hex; 6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SBC857ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF Type of diode: TVS Breakdown voltage: 4.8V Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Kind of package: reel; tape Version: ESD Capacitance: 0.5...0.9pF Leakage current: 1µA Peak pulse power dissipation: 0.15W |
auf Bestellung 7146 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS38 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 80V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563F Drain current: 0.225A Power dissipation: 0.28W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVB0530T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 4128 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL041N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 32.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 108nC |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQD1N60CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FQU1N60CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 4A Gate charge: 6.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCH041N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48.7A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 231A Gate charge: 285nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCH041N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCH041N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DTC123EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DTC123EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MBRS190T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape |
auf Bestellung 1342 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD3150 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 5kV Case: DIP8 Max. off-state voltage: 5V Slew rate: 50kV/μs Output voltage: 0...35V Turn-off time: 60ns Turn-on time: 60ns Kind of output: transistor |
auf Bestellung 319 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD7181MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape Case: X3DFN2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS Breakdown voltage: 20.5...35V Max. off-state voltage: 18.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP1607BDR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTP125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FCMT125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSD701T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape Capacitance: 1pF |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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LM337T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -37...-1.2V Output current: 1.5A Case: TO220-3 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Kind of package: tube Heatsink thickness: 0.51...0.61mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DF04M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| BC847BPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SBC847BPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14023BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: NAND Mounting: SMD Case: SO14 Number of channels: triple; 3 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBRS2040LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. load current: 4A Kind of package: reel; tape |
auf Bestellung 4721 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 4408 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LVXT4051DR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Supply voltage: 2.5...6V DC Type of integrated circuit: digital Technology: CMOS; TTL Quiescent current: 80µA Kind of package: reel; tape Case: SO16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74LVXT4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Manufacturer series: LVXT Mounting: SMD Operating temperature: -55...125°C Family: LVXT Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Supply voltage: -6...0V DC; 2.5...6V DC Type of integrated circuit: digital Technology: CMOS; TTL Number of inputs: 8 Kind of package: reel; tape Case: TSSOP16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74LVXT4051DTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Manufacturer series: LVXT Mounting: SMD Operating temperature: -55...125°C Family: LVXT Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Supply voltage: -6...0V DC; 2.5...6V DC Type of integrated circuit: digital Technology: CMOS; TTL Number of inputs: 8 Kind of package: reel; tape Case: TSSOP16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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RFP12N10L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTTFS012N10MDTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 217A Power dissipation: 62W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 14.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMYS012N10MCLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 283A Power dissipation: 36W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1SMB5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
auf Bestellung 1755 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5226BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
auf Bestellung 29959 Stücke: Lieferzeit 14-21 Tag (e) |
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| FUSB302BMPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.8...5.5V Case: WQFN14 Mounting: SMD Operating temperature: -40...125°C Data transfer rate: 5Gbps Interface: USB DC supply current: 25µA Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FUSB302B01MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.7...21V Case: WQFN14 Mounting: SMD Operating temperature: -40...85°C Data transfer rate: 5Gbps Interface: I2C; USB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FUSB302B11MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.85...5.5V Case: WQFN14 Mounting: SMD Operating temperature: -40...85°C Data transfer rate: 5Gbps Interface: I2C; USB; USB 2.0 Version: Standard; USB 2.0 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FUSB302BUCX | ONSEMI |
Category: USB interfaces - integrated circuits Description: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9 Type of integrated circuit: interface Kind of integrated circuit: USB C controller USB speed: Full Speed Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Case: WLCSP9 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N4003G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
auf Bestellung 449 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4003RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 5000pcs. |
auf Bestellung 4320 Stücke: Lieferzeit 14-21 Tag (e) |
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MPSA92G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs Max. off-state voltage: 5V Turn-on time: 75ns Turn-off time: 55ns Output voltage: 0...25V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: MOSFET Insulation voltage: 5kV Case: PDIP8 Max. off-state voltage: 5V Manufacturer series: FOD3180 Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MJD112-1G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: IPAK
Mounting: THT
Current gain: 100...12000
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: IPAK
Mounting: THT
Current gain: 100...12000
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 69+ | 1.24 EUR |
| 80+ | 1.07 EUR |
| 95+ | 0.9 EUR |
| MJD112T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD112RLG |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13HE |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 25A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13FP |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1010AP100G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 100kHz; Ch: 1; DIP7
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 0.1MHz
Mounting: THT
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Application: SMPS
Kind of package: tube
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 100kHz; Ch: 1; DIP7
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 0.1MHz
Mounting: THT
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Application: SMPS
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
auf Bestellung 1477 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 146+ | 0.58 EUR |
| 162+ | 0.52 EUR |
| 186+ | 0.45 EUR |
| 250+ | 0.43 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
| FDMC6675BZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -32A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -32A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5237B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5237BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5237BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF76629D3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC14106BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 100ns
Mounting: SMD
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 100ns
Mounting: SMD
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.76 EUR |
| 161+ | 0.54 EUR |
| 171+ | 0.5 EUR |
| MC14106BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 100ns
Mounting: SMD
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 100ns
Mounting: SMD
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 0.7 EUR |
| 172+ | 0.5 EUR |
| 193+ | 0.44 EUR |
| 221+ | 0.38 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.35 EUR |
| NLV14106BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Mounting: SMD
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Quiescent current: 30µA
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Number of channels: hex; 6
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Mounting: SMD
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Quiescent current: 30µA
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Number of channels: hex; 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SBC857ALT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| ESD9L3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
auf Bestellung 7146 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 218+ | 0.39 EUR |
| 269+ | 0.32 EUR |
| 311+ | 0.27 EUR |
| 544+ | 0.15 EUR |
| 596+ | 0.14 EUR |
| SS38 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTZD5110NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 421+ | 0.2 EUR |
| 569+ | 0.15 EUR |
| 685+ | 0.12 EUR |
| 1000+ | 0.12 EUR |
| NRVB0530T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 4128 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 410+ | 0.2 EUR |
| 455+ | 0.19 EUR |
| 582+ | 0.14 EUR |
| NTHL041N60S5H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.19 EUR |
| FQD1N60CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU1N60CTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS190T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
auf Bestellung 1342 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.76 EUR |
| 150+ | 0.57 EUR |
| 174+ | 0.49 EUR |
| 235+ | 0.36 EUR |
| 264+ | 0.32 EUR |
| 500+ | 0.25 EUR |
| FOD3150 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Slew rate: 50kV/μs
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Slew rate: 50kV/μs
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Kind of output: transistor
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 1.69 EUR |
| 57+ | 1.5 EUR |
| 60+ | 1.43 EUR |
| 100+ | 1.26 EUR |
| ESD7181MUT5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Breakdown voltage: 20.5...35V
Max. off-state voltage: 18.5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Breakdown voltage: 20.5...35V
Max. off-state voltage: 18.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1607BDR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP125N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCMT125N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSD701T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 1pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 1pF
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |
| LM337T |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DF04M |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC847BPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBC847BPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| MC14023BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| MBRS2040LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
auf Bestellung 4721 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 0.55 EUR |
| 209+ | 0.4 EUR |
| 236+ | 0.36 EUR |
| 262+ | 0.32 EUR |
| 291+ | 0.3 EUR |
| 341+ | 0.25 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| SS14 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 4408 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 269+ | 0.32 EUR |
| 305+ | 0.27 EUR |
| 407+ | 0.21 EUR |
| 455+ | 0.19 EUR |
| 532+ | 0.15 EUR |
| 596+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| MC74LVXT4051DR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Supply voltage: 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Quiescent current: 80µA
Kind of package: reel; tape
Case: SO16
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Supply voltage: 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Quiescent current: 80µA
Kind of package: reel; tape
Case: SO16
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| MC74LVXT4051DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Family: LVXT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Number of inputs: 8
Kind of package: reel; tape
Case: TSSOP16
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Family: LVXT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Number of inputs: 8
Kind of package: reel; tape
Case: TSSOP16
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| MC74LVXT4051DTRG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Family: LVXT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Number of inputs: 8
Kind of package: reel; tape
Case: TSSOP16
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Family: LVXT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Technology: CMOS; TTL
Number of inputs: 8
Kind of package: reel; tape
Case: TSSOP16
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| RFP12N10L |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.13 EUR |
| NTTFS012N10MDTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NVMYS012N10MCLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1SMB5913BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
auf Bestellung 1755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 248+ | 0.35 EUR |
| 315+ | 0.27 EUR |
| 376+ | 0.23 EUR |
| 443+ | 0.19 EUR |
| 527+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| MMSZ5226BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
auf Bestellung 29959 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 650+ | 0.13 EUR |
| 913+ | 0.093 EUR |
| 1073+ | 0.08 EUR |
| 1345+ | 0.063 EUR |
| 1619+ | 0.052 EUR |
| 1977+ | 0.043 EUR |
| 3000+ | 0.031 EUR |
| 6000+ | 0.03 EUR |
| FUSB302BMPX |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.8...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...125°C
Data transfer rate: 5Gbps
Interface: USB
DC supply current: 25µA
Version: ESD
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.8...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...125°C
Data transfer rate: 5Gbps
Interface: USB
DC supply current: 25µA
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FUSB302B01MPX |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...21V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Interface: I2C; USB
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...21V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Interface: I2C; USB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FUSB302B11MPX |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.85...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Interface: I2C; USB; USB 2.0
Version: Standard; USB 2.0
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.85...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Interface: I2C; USB; USB 2.0
Version: Standard; USB 2.0
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| FUSB302BUCX |
|
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9
Type of integrated circuit: interface
Kind of integrated circuit: USB C controller
USB speed: Full Speed
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9
Type of integrated circuit: interface
Kind of integrated circuit: USB C controller
USB speed: Full Speed
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| 1N4003G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 449 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 449+ | 0.19 EUR |
| 1N4003RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
auf Bestellung 4320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 481+ | 0.18 EUR |
| 760+ | 0.11 EUR |
| 1029+ | 0.082 EUR |
| 1171+ | 0.073 EUR |
| MPSA92G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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Stück im Wert von UAH
| FOD3180 |
|
Hersteller: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Turn-on time: 75ns
Turn-off time: 55ns
Output voltage: 0...25V
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Turn-on time: 75ns
Turn-off time: 55ns
Output voltage: 0...25V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD3180TV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH