| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FDD86367-F085 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 227W Case: DPAK3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FFSP10120A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube Max. forward voltage: 1.75V Technology: SiC Max. off-state voltage: 1.2kV Load current: 10A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FFSP1065A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Max. forward voltage: 1.75V Technology: SiC Max. off-state voltage: 650V Load current: 15A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FFSP1065B-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Max. forward voltage: 1.7V Technology: SiC Application: automotive industry Max. off-state voltage: 650V Load current: 10A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FFSP1265A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FFSP15120A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube Max. forward voltage: 1.75V Technology: SiC Max. off-state voltage: 1.2kV Load current: 15A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MJ15024G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT5087LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.25W Polarisation: bipolar Type of transistor: PNP Current gain: 250...800 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 40MHz Collector current: 50mA |
auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NSVMMBT5087LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.25W Polarisation: bipolar Application: automotive industry Type of transistor: PNP Current gain: 250...800 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 40MHz Collector current: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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KSC5027OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 3A Power dissipation: 50W Case: TO220AB Current gain: 20...40 Mounting: THT Kind of package: tube Frequency: 15MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS4D0N12C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8 Mounting: SMD Case: PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 82nC Kind of package: reel; tape On-state resistance: 8.8mΩ Gate-source voltage: ±20V Power dissipation: 106W Drain current: 114A Drain-source voltage: 120V Pulsed drain current: 628A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NTD2955T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -18A |
auf Bestellung 1845 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FUSB15201VMNWTWG | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C Type of integrated circuit: interface Mounting: SMD DC supply current: 330µA Case: QFN24 Operating temperature: -40...105°C Supply voltage: 3...5.5V Frequency: 24MHz Interface: I2C Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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KSD2012GTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP Mounting: THT Type of transistor: NPN Current gain: 150...320 Kind of package: tube Case: TO220FP Frequency: 3MHz Collector current: 3A Collector-emitter voltage: 60V Power dissipation: 25W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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KSC1845FTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.5W Case: TO92 Formed Current gain: 300...600 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 2670 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD11P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.95A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2469 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD17P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 508 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQA36P15 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -25.5A Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQP47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD8P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Drain-source voltage: -100V Drain current: -4.2A Case: DPAK Polarisation: unipolar On-state resistance: 530mΩ Power dissipation: 44W Technology: QFET® Kind of channel: enhancement Gate charge: 15nC Gate-source voltage: ±30V Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET |
auf Bestellung 1441 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD7P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK Drain-source voltage: -200V Drain current: -3.6A Case: DPAK Polarisation: unipolar On-state resistance: 690mΩ Power dissipation: 55W Technology: QFET® Kind of channel: enhancement Gate charge: 25nC Gate-source voltage: ±30V Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET |
auf Bestellung 1135 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQB22P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK Drain-source voltage: -100V Drain current: -15.6A Case: D2PAK Polarisation: unipolar On-state resistance: 0.125Ω Power dissipation: 125W Technology: QFET® Kind of channel: enhancement Gate charge: 50nC Gate-source voltage: ±30V Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET |
auf Bestellung 3369 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQP17P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQT7N10LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.36A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2492 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD3P50TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK Drain-source voltage: -500V Drain current: -1.33A Case: DPAK Polarisation: unipolar On-state resistance: 4.9Ω Power dissipation: 50W Technology: QFET® Kind of channel: enhancement Gate charge: 23nC Gate-source voltage: ±30V Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQB34P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD12N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDMC2523P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8 Drain-source voltage: -150V Drain current: -1.8A Case: MLP8 Polarisation: unipolar On-state resistance: 3.6Ω Power dissipation: 42W Technology: QFET® Kind of channel: enhancement Gate charge: 9nC Gate-source voltage: ±30V Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET |
auf Bestellung 2988 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQB12P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Drain-source voltage: -200V Drain current: -7.27A Case: D2PAK Polarisation: unipolar On-state resistance: 470mΩ Power dissipation: 120W Technology: QFET® Kind of channel: enhancement Gate charge: 40nC Gate-source voltage: ±30V Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQPF47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -21.2A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQB47P06TM-AM002 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQA70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 49.5A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD13N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 757 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD19N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.8A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1467 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQT4N20LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3128 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQPF19N20C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD13N06LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 28W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2023 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQP6N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Power dissipation: 158W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQB5N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK Mounting: SMD Drain current: 3.42A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK On-state resistance: 2.3Ω Power dissipation: 158W Gate charge: 40nC Polarisation: unipolar Technology: QFET® |
auf Bestellung 678 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQP45N15V2 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQB55N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK Mounting: SMD Polarisation: unipolar Technology: QFET® Drain current: 38.9A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: D2PAK On-state resistance: 26mΩ Power dissipation: 155W Gate charge: 98nC |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD6N40CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.7A Power dissipation: 48W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1459 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQP11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD9N25TM-F080 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 29.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC7905CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -5V Output current: 1A Case: TO220AB Mounting: THT Manufacturer series: MC7900 Kind of package: tube Operating temperature: 0...125°C Number of channels: 1 Tolerance: ±4% Heatsink thickness: 0.508...0.61mm |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NV24C512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: uDFN8 Kind of interface: serial Kind of package: reel; tape Access time: 0.4ns Operating temperature: -40...125°C Clock frequency: 1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAV24C512YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Kind of package: reel; tape Access time: 400ns Operating temperature: -40...125°C Clock frequency: 1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SA5534ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV Type of integrated circuit: operational amplifier Case: SO8 Mounting: SMT Integrated circuit features: low noise Bandwidth: 10MHz Input offset voltage: 2mV Slew rate: 13V/μs Operating temperature: -40...85°C Input bias current: 0.8µA Voltage supply range: ± 3...20V DC Kind of package: reel; tape Input offset current: 200nA Number of channels: single; 1 |
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MJ802G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 30A Power dissipation: 200W Case: TO3; TO204 Current gain: 25...100 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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| PIR-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NCS36000 development kits accessories features: motion sensor Type of accessories for development kits: expansion board Components: NCS36000 Kit contents: prototype board Connection: Pmod connector Interface: GPIO; I2C |
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| GBPC2508 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
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| GBPC2508W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
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MC33274ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 10V/μs Input offset voltage: 1.8mV Kind of package: reel; tape |
auf Bestellung 914 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC33274ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 10V/μs Input offset voltage: 1.8mV Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 80nA |
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MC33262PG | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC Type of integrated circuit: PMIC Output voltage: 6.4V Output current: 0.5A Case: DIP8 Mounting: THT Kind of package: tube Operating voltage: 12...28V DC Application: SMPS Kind of integrated circuit: PFC controller |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33262DR2G | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC Type of integrated circuit: PMIC Output voltage: 6.4V Output current: 0.5A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating voltage: 12...28V DC Application: SMPS Kind of integrated circuit: PFC controller |
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MC74HC597ADR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13 Type of integrated circuit: digital Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Number of channels: 1 Manufacturer series: HC Operating temperature: -55...125°C Technology: CMOS Number of inputs: 13 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FOD4216 | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us Output voltage: 600V Case: DIP6 Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: THT Manufacturer series: FOD4216 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FOD4216SD | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Output voltage: 600V Kind of package: reel; tape Case: SMT6 Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: SMD Manufacturer series: FOD4216 Kind of output: triac Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FOD4216SDV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Output voltage: 600V Kind of package: reel; tape Case: SMT6 Conform to the norm: VDE Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: SMD Manufacturer series: FOD4216 Kind of output: triac Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDD86367-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FFSP10120A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Max. forward voltage: 1.75V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Max. forward voltage: 1.75V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP1065A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Max. forward voltage: 1.75V
Technology: SiC
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Max. forward voltage: 1.75V
Technology: SiC
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP1065B-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Max. forward voltage: 1.7V
Technology: SiC
Application: automotive industry
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Max. forward voltage: 1.7V
Technology: SiC
Application: automotive industry
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP1265A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP15120A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Max. forward voltage: 1.75V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Max. forward voltage: 1.75V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ15024G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBT5087LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 250...800
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 40MHz
Collector current: 50mA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 250...800
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 40MHz
Collector current: 50mA
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
| NSVMMBT5087LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.25W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 250...800
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 40MHz
Collector current: 50mA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.25W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 250...800
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 40MHz
Collector current: 50mA
Produkt ist nicht verfügbar
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| KSC5027OTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDMS4D0N12C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82nC
Kind of package: reel; tape
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Power dissipation: 106W
Drain current: 114A
Drain-source voltage: 120V
Pulsed drain current: 628A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82nC
Kind of package: reel; tape
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Power dissipation: 106W
Drain current: 114A
Drain-source voltage: 120V
Pulsed drain current: 628A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NTD2955T4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -18A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -18A
auf Bestellung 1845 Stücke:
Lieferzeit 14-21 Tag (e)
| FUSB15201VMNWTWG |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 330µA
Case: QFN24
Operating temperature: -40...105°C
Supply voltage: 3...5.5V
Frequency: 24MHz
Interface: I2C
Application: automotive industry
Category: Battery and battery cells controllers
Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 330µA
Case: QFN24
Operating temperature: -40...105°C
Supply voltage: 3...5.5V
Frequency: 24MHz
Interface: I2C
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| KSD2012GTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Type of transistor: NPN
Current gain: 150...320
Kind of package: tube
Case: TO220FP
Frequency: 3MHz
Collector current: 3A
Collector-emitter voltage: 60V
Power dissipation: 25W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Type of transistor: NPN
Current gain: 150...320
Kind of package: tube
Case: TO220FP
Frequency: 3MHz
Collector current: 3A
Collector-emitter voltage: 60V
Power dissipation: 25W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSC1845FTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...600
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...600
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD11P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2469 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD17P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 508 Stücke:
Lieferzeit 14-21 Tag (e)
| FQA36P15 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
| FQP47P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD8P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Drain-source voltage: -100V
Drain current: -4.2A
Case: DPAK
Polarisation: unipolar
On-state resistance: 530mΩ
Power dissipation: 44W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Drain-source voltage: -100V
Drain current: -4.2A
Case: DPAK
Polarisation: unipolar
On-state resistance: 530mΩ
Power dissipation: 44W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
auf Bestellung 1441 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD7P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Drain-source voltage: -200V
Drain current: -3.6A
Case: DPAK
Polarisation: unipolar
On-state resistance: 690mΩ
Power dissipation: 55W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 25nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Drain-source voltage: -200V
Drain current: -3.6A
Case: DPAK
Polarisation: unipolar
On-state resistance: 690mΩ
Power dissipation: 55W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 25nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
| FQB22P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Drain-source voltage: -100V
Drain current: -15.6A
Case: D2PAK
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 125W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 50nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Drain-source voltage: -100V
Drain current: -15.6A
Case: D2PAK
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 125W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 50nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
auf Bestellung 3369 Stücke:
Lieferzeit 14-21 Tag (e)
| FQP17P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
| FQT7N10LTF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD3P50TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Drain-source voltage: -500V
Drain current: -1.33A
Case: DPAK
Polarisation: unipolar
On-state resistance: 4.9Ω
Power dissipation: 50W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 23nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Drain-source voltage: -500V
Drain current: -1.33A
Case: DPAK
Polarisation: unipolar
On-state resistance: 4.9Ω
Power dissipation: 50W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 23nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| FQB34P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD12N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMC2523P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Drain-source voltage: -150V
Drain current: -1.8A
Case: MLP8
Polarisation: unipolar
On-state resistance: 3.6Ω
Power dissipation: 42W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 9nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Drain-source voltage: -150V
Drain current: -1.8A
Case: MLP8
Polarisation: unipolar
On-state resistance: 3.6Ω
Power dissipation: 42W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 9nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
auf Bestellung 2988 Stücke:
Lieferzeit 14-21 Tag (e)
| FQB12P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Drain-source voltage: -200V
Drain current: -7.27A
Case: D2PAK
Polarisation: unipolar
On-state resistance: 470mΩ
Power dissipation: 120W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 40nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Drain-source voltage: -200V
Drain current: -7.27A
Case: D2PAK
Polarisation: unipolar
On-state resistance: 470mΩ
Power dissipation: 120W
Technology: QFET®
Kind of channel: enhancement
Gate charge: 40nC
Gate-source voltage: ±30V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| FQPF47P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| FQB47P06TM-AM002 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)
| FQA70N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD13N10LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD19N10LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)
| FQT4N20LTF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3128 Stücke:
Lieferzeit 14-21 Tag (e)
| FQPF19N20C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD13N06LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2023 Stücke:
Lieferzeit 14-21 Tag (e)
| FQP6N80C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
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| FQB5N90TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Mounting: SMD
Drain current: 3.42A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 2.3Ω
Power dissipation: 158W
Gate charge: 40nC
Polarisation: unipolar
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Mounting: SMD
Drain current: 3.42A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 2.3Ω
Power dissipation: 158W
Gate charge: 40nC
Polarisation: unipolar
Technology: QFET®
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)
| FQP45N15V2 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| FQB55N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Mounting: SMD
Polarisation: unipolar
Technology: QFET®
Drain current: 38.9A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 26mΩ
Power dissipation: 155W
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Mounting: SMD
Polarisation: unipolar
Technology: QFET®
Drain current: 38.9A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 26mΩ
Power dissipation: 155W
Gate charge: 98nC
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD6N40CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)
| FQP11N40C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
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| FQD9N25TM-F080 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
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| MC7905CTG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: TO220AB
Mounting: THT
Manufacturer series: MC7900
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: TO220AB
Mounting: THT
Manufacturer series: MC7900
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
auf Bestellung 188 Stücke:
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| NV24C512MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 0.4ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 0.4ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Produkt ist nicht verfügbar
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| CAV24C512YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Produkt ist nicht verfügbar
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| SA5534ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low noise
Bandwidth: 10MHz
Input offset voltage: 2mV
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low noise
Bandwidth: 10MHz
Input offset voltage: 2mV
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: single; 1
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| MJ802G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| PIR-GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
Components: NCS36000
Kit contents: prototype board
Connection: Pmod connector
Interface: GPIO; I2C
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
Components: NCS36000
Kit contents: prototype board
Connection: Pmod connector
Interface: GPIO; I2C
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| GBPC2508 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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| GBPC2508W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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| MC33274ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33274ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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| MC33262PG |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output voltage: 6.4V
Output current: 0.5A
Case: DIP8
Mounting: THT
Kind of package: tube
Operating voltage: 12...28V DC
Application: SMPS
Kind of integrated circuit: PFC controller
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output voltage: 6.4V
Output current: 0.5A
Case: DIP8
Mounting: THT
Kind of package: tube
Operating voltage: 12...28V DC
Application: SMPS
Kind of integrated circuit: PFC controller
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33262DR2G |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output voltage: 6.4V
Output current: 0.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 12...28V DC
Application: SMPS
Kind of integrated circuit: PFC controller
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output voltage: 6.4V
Output current: 0.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 12...28V DC
Application: SMPS
Kind of integrated circuit: PFC controller
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| MC74HC597ADR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Manufacturer series: HC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 13
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Manufacturer series: HC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 13
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| FOD4216 |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Output voltage: 600V
Case: DIP6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Output voltage: 600V
Case: DIP6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Produkt ist nicht verfügbar
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| FOD4216SD |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Produkt ist nicht verfügbar
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| FOD4216SDV |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Produkt ist nicht verfügbar
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