| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FOD8143SD | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 20-300%@1mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FOD814300W | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 20-300%@1mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC817-16LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HCT138MTC | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Family: HCT Quiescent current: 160µA |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78LC30NTRG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 60mV Output voltage: 3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4...12V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NUP2201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD Mounting: SMD Kind of package: reel; tape Case: TSOP6 Semiconductor structure: unidirectional Leakage current: 5µA Number of channels: 2 Breakdown voltage: 6V Max. forward impulse current: 25A Peak pulse power dissipation: 0.5kW Type of diode: TVS array Version: ESD |
auf Bestellung 1156 Stücke: Lieferzeit 14-21 Tag (e) |
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NUP4301MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: diode arrays; ESD; SC74; Ch: 4; reel,tape Case: SC74 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 70V Type of diode: diode arrays Number of channels: 4 Version: ESD |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVBAS21TMR6T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SC74 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVBAS21TMR6T2G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SC74 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSP2201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape Mounting: SMD Kind of package: reel; tape Case: TSOP6 Semiconductor structure: unidirectional Number of channels: 2 Max. off-state voltage: 5V Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Application: USB Type of diode: TVS array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZTVS4201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Kind of package: reel; tape Case: TSOP6 Semiconductor structure: unidirectional Number of channels: 4 Max. off-state voltage: 5V Breakdown voltage: 6V Application: automotive industry Type of diode: TVS array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZNSP2201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape Mounting: SMD Kind of package: reel; tape Case: TSOP6 Semiconductor structure: unidirectional Number of channels: 2 Max. off-state voltage: 5V Breakdown voltage: 6V Application: automotive industry Type of diode: TVS array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZNUP4114HMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Kind of package: reel; tape Case: TSOP6 Semiconductor structure: unidirectional Number of channels: 4 Max. off-state voltage: 5.5V Breakdown voltage: 6.5V Application: automotive industry Type of diode: TVS array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN5624UMPX | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; SWD; UMLP10; 30mA; Ch: 4; 2.7÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: UMLP10 Output current: 30mA Number of channels: 4 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Maximum output current: 30mA Supply voltage: 2.7...5.5V DC Interface: SWD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MM3Z9V1B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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KSD1616AGTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Case: TO92 Formed Mounting: THT Type of transistor: NPN Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 200...400 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| KSD1588YTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP Case: TO220FP Mounting: THT Power dissipation: 30W Collector current: 7A Pulsed collector current: 15A Type of transistor: NPN Collector-emitter voltage: 60V Polarisation: bipolar Current gain: 100...200 Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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KSD1616AYTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Mounting: THT Type of transistor: NPN Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 135...270 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar Case: TO92 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74HC377ADTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Manufacturer series: HC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MMBD353LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: double series Features of semiconductor devices: PIN; RF Case: SOT23 Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVMMBD353LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 7V Reverse recovery time: 10ns Semiconductor structure: double series Features of semiconductor devices: PIN; RF Case: SOT23 Max. forward voltage: 0.6V Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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ISL9V5036S3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level Version: ESD Kind of package: reel; tape Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: SMD Gate charge: 32nC Power dissipation: 250W Collector current: 31A Gate-emitter voltage: ±10V Collector-emitter voltage: 390V Application: ignition systems Case: D2PAK |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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FGP3440G2-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: TO220-3 Gate-emitter voltage: ±10V Mounting: THT Kind of package: tube Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM3Z9V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 4979 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 4212 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 2230 Stücke: Lieferzeit 14-21 Tag (e) |
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| ES2C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.66W Leakage current: 0.35mA Capacitance: 18pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN7382M1X | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™ Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP14 Output current: -650...350mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 140ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NLU2G14MUTCG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA Mounting: SMD Operating temperature: -55...125°C Kind of gate: NOT Kind of package: reel; tape Kind of input: with Schmitt trigger Quiescent current: 40µA Supply voltage: 1.65...5.5V DC Number of inputs: 1 Technology: CMOS Type of integrated circuit: digital Case: uDFN6 Number of channels: dual; 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDD770N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC143EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 15...30 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDB3652 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 53nC On-state resistance: 43mΩ Gate-source voltage: ±20V Drain current: 61A Power dissipation: 150W Drain-source voltage: 100V Kind of channel: enhancement |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB3632 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 110nC On-state resistance: 22mΩ Gate-source voltage: ±20V Drain current: 80A Power dissipation: 310W Drain-source voltage: 100V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDB3682 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; D2PAK-3 Mounting: SMD Case: D2PAK-3 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 18.5nC On-state resistance: 36mΩ Gate-source voltage: ±20V Drain current: 32A Power dissipation: 95W Drain-source voltage: 100V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SB10-05P-TD-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape Case: SOT89 Kind of package: reel; tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 1A Max. forward voltage: 0.55V Max. forward impulse current: 10A Max. off-state voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTB082N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: D2PAK-3 Gate-source voltage: ±20V On-state resistance: 82mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SZBZX84C4V7LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84C4V7LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZBZX84C4V7ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDS6670A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MBRS360BT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape |
auf Bestellung 4547 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP80N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 320A Power dissipation: 176W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FAN3111ESX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Output current: -0.9...1.1A Impulse rise time: 18ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 17ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C |
auf Bestellung 513 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN3111CSX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Output current: -0.9...1.1A Impulse rise time: 18ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 17ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C |
auf Bestellung 1597 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1100RLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V Case: DO41 Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.69V Load current: 1A Max. forward impulse current: 50A Max. off-state voltage: 0.1kV Kind of package: reel; tape |
auf Bestellung 3791 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1100G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.79V Max. load current: 2A Max. forward impulse current: 50A Kind of package: bulk |
auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1100ERLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 35A Case: CASE59 Reverse recovery time: 75ns |
auf Bestellung 5334 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1520G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.14...1.39mm Reverse recovery time: 35ns Max. load current: 30A |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6488G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB Case: TO220AB Type of transistor: NPN Kind of package: tube Mounting: THT Collector current: 15A Current gain: 20...150 Power dissipation: 75W Collector-emitter voltage: 80V Frequency: 5MHz Polarisation: bipolar |
auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1397BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16 Case: SO16 Output current: -1...0.5A Number of channels: 1 Operating voltage: 9...20V DC Frequency: 0.5MHz Kind of integrated circuit: resonant mode controller Type of integrated circuit: PMIC Topology: push-pull; resonant LLC Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1396BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Output current: 0.5...1A Frequency: 58.2...575kHz Number of channels: 1 Case: SO16 Mounting: SMD Operating temperature: -40...125°C Topology: push-pull; resonant LLC Operating voltage: 9.5...20V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1393BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V Operating temperature: -40...125°C Case: SO8 Output current: -1...0.5A Pulse fall time: 20ns Impulse rise time: 40ns Supply voltage: 8...17.5V DC Voltage class: 600V Type of integrated circuit: driver Topology: MOSFET half-bridge Mounting: SMD |
Produkt ist nicht verfügbar |
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NCP1392BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V Operating temperature: -40...125°C Case: SO8 Output current: -1...0.5A Pulse fall time: 20ns Impulse rise time: 40ns Supply voltage: 8...17.5V DC Voltage class: 600V Type of integrated circuit: driver Topology: MOSFET half-bridge Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1395BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1 Operating temperature: -40...125°C Case: SO16 Output current: 1A Number of channels: 1 Operating voltage: 9.3...20V DC Frequency: 48.5kHz...1.11MHz Kind of integrated circuit: resonant mode controller Type of integrated circuit: PMIC Topology: push-pull; resonant LLC Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MPSA42G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTR4003NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.83W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 1.15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 10518 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4003NT3G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.83W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 1.15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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74AC139MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP14 Family: AC Supply voltage: 2...6V DC Manufacturer series: AC Kind of integrated circuit: decoder; demultiplexer Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA Number of inputs: 1 |
auf Bestellung 1819 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC541SC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Case: SO20 Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 40µA Manufacturer series: AC Mounting: SMD |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC541MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 40µA Manufacturer series: AC Mounting: SMD |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD8143SD |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD814300W |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817-16LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.017 EUR |
| MM74HCT138MTC |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: HCT
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: HCT
Quiescent current: 160µA
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| MC78LC30NTRG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 60mV
Output voltage: 3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 60mV
Output voltage: 3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4...12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NUP2201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Leakage current: 5µA
Number of channels: 2
Breakdown voltage: 6V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.5kW
Type of diode: TVS array
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Leakage current: 5µA
Number of channels: 2
Breakdown voltage: 6V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.5kW
Type of diode: TVS array
Version: ESD
auf Bestellung 1156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 244+ | 0.29 EUR |
| NUP4301MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; ESD; SC74; Ch: 4; reel,tape
Case: SC74
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Type of diode: diode arrays
Number of channels: 4
Version: ESD
Category: Protection diodes - arrays
Description: Diode: diode arrays; ESD; SC74; Ch: 4; reel,tape
Case: SC74
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Type of diode: diode arrays
Number of channels: 4
Version: ESD
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 0.99 EUR |
| NSVBAS21TMR6T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBAS21TMR6T2G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSP2201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Application: USB
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Application: USB
Type of diode: TVS array
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZTVS4201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNSP2201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNUP4114HMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Application: automotive industry
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Application: automotive industry
Type of diode: TVS array
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN5624UMPX |
|
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SWD; UMLP10; 30mA; Ch: 4; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: UMLP10
Output current: 30mA
Number of channels: 4
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 30mA
Supply voltage: 2.7...5.5V DC
Interface: SWD
Category: LED drivers
Description: IC: driver; LED driver; SWD; UMLP10; 30mA; Ch: 4; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: UMLP10
Output current: 30mA
Number of channels: 4
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 30mA
Supply voltage: 2.7...5.5V DC
Interface: SWD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM3Z9V1B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1616AGTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Type of transistor: NPN
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Type of transistor: NPN
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1588YTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 30W
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 100...200
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 30W
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 100...200
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1616AYTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Mounting: THT
Type of transistor: NPN
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Mounting: THT
Type of transistor: NPN
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC377ADTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MMBD353LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBD353LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 7V
Reverse recovery time: 10ns
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Case: SOT23
Max. forward voltage: 0.6V
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 7V
Reverse recovery time: 10ns
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Case: SOT23
Max. forward voltage: 0.6V
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V5036S3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 250W
Collector current: 31A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 390V
Application: ignition systems
Case: D2PAK
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 250W
Collector current: 31A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 390V
Application: ignition systems
Case: D2PAK
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.98 EUR |
| 18+ | 4.2 EUR |
| 19+ | 3.89 EUR |
| 50+ | 3.49 EUR |
| FGP3440G2-F085 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM3Z9V1T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 4979 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1137+ | 0.063 EUR |
| 1656+ | 0.043 EUR |
| 1924+ | 0.037 EUR |
| 2213+ | 0.032 EUR |
| 2605+ | 0.027 EUR |
| 2891+ | 0.025 EUR |
| 3049+ | 0.023 EUR |
| MC33072DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 4212 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 202+ | 0.35 EUR |
| 225+ | 0.32 EUR |
| 258+ | 0.28 EUR |
| 307+ | 0.23 EUR |
| 338+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| MC33072ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 2230 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 198+ | 0.36 EUR |
| 225+ | 0.32 EUR |
| 271+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| 500+ | 0.21 EUR |
| ES2C |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN7382M1X |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NLU2G14MUTCG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Mounting: SMD
Operating temperature: -55...125°C
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of inputs: 1
Technology: CMOS
Type of integrated circuit: digital
Case: uDFN6
Number of channels: dual; 2
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Mounting: SMD
Operating temperature: -55...125°C
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of inputs: 1
Technology: CMOS
Type of integrated circuit: digital
Case: uDFN6
Number of channels: dual; 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDD770N15A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 72+ | 1 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.68 EUR |
| DTC143EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB3652 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 43mΩ
Gate-source voltage: ±20V
Drain current: 61A
Power dissipation: 150W
Drain-source voltage: 100V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 43mΩ
Gate-source voltage: ±20V
Drain current: 61A
Power dissipation: 150W
Drain-source voltage: 100V
Kind of channel: enhancement
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 2.99 EUR |
| 30+ | 2.39 EUR |
| 35+ | 2.09 EUR |
| 41+ | 1.74 EUR |
| 100+ | 1.59 EUR |
| FDB3632 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Drain current: 80A
Power dissipation: 310W
Drain-source voltage: 100V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Drain current: 80A
Power dissipation: 310W
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDB3682 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; D2PAK-3
Mounting: SMD
Case: D2PAK-3
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18.5nC
On-state resistance: 36mΩ
Gate-source voltage: ±20V
Drain current: 32A
Power dissipation: 95W
Drain-source voltage: 100V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; D2PAK-3
Mounting: SMD
Case: D2PAK-3
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18.5nC
On-state resistance: 36mΩ
Gate-source voltage: ±20V
Drain current: 32A
Power dissipation: 95W
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SB10-05P-TD-E |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Case: SOT89
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 0.55V
Max. forward impulse current: 10A
Max. off-state voltage: 50V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Case: SOT89
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 0.55V
Max. forward impulse current: 10A
Max. off-state voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTB082N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C4V7LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 370+ | 0.2 EUR |
| BZX84C4V7LT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C4V7ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6670A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBRS360BT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
auf Bestellung 4547 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 321+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| 379+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| 2500+ | 0.14 EUR |
| FDP80N06 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3111ESX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 121+ | 0.59 EUR |
| 135+ | 0.53 EUR |
| 156+ | 0.46 EUR |
| 160+ | 0.45 EUR |
| FAN3111CSX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 1597 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 108+ | 0.67 EUR |
| MBR1100RLG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
auf Bestellung 3791 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 230+ | 0.31 EUR |
| 260+ | 0.28 EUR |
| 285+ | 0.25 EUR |
| 311+ | 0.23 EUR |
| MBR1100G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.79V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: bulk
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.79V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: bulk
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| MUR1100ERLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
auf Bestellung 5334 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 102+ | 0.71 EUR |
| 113+ | 0.64 EUR |
| 146+ | 0.49 EUR |
| 164+ | 0.44 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.34 EUR |
| MUR1520G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Max. load current: 30A
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 92+ | 0.78 EUR |
| 103+ | 0.7 EUR |
| 2N6488G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
auf Bestellung 717 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 59+ | 1.23 EUR |
| 110+ | 0.65 EUR |
| 118+ | 0.61 EUR |
| NCP1397BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Case: SO16
Output current: -1...0.5A
Number of channels: 1
Operating voltage: 9...20V DC
Frequency: 0.5MHz
Kind of integrated circuit: resonant mode controller
Type of integrated circuit: PMIC
Topology: push-pull; resonant LLC
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Case: SO16
Output current: -1...0.5A
Number of channels: 1
Operating voltage: 9...20V DC
Frequency: 0.5MHz
Kind of integrated circuit: resonant mode controller
Type of integrated circuit: PMIC
Topology: push-pull; resonant LLC
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1396BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 0.5...1A
Frequency: 58.2...575kHz
Number of channels: 1
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Topology: push-pull; resonant LLC
Operating voltage: 9.5...20V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 0.5...1A
Frequency: 58.2...575kHz
Number of channels: 1
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Topology: push-pull; resonant LLC
Operating voltage: 9.5...20V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1393BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Operating temperature: -40...125°C
Case: SO8
Output current: -1...0.5A
Pulse fall time: 20ns
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Operating temperature: -40...125°C
Case: SO8
Output current: -1...0.5A
Pulse fall time: 20ns
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1392BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Operating temperature: -40...125°C
Case: SO8
Output current: -1...0.5A
Pulse fall time: 20ns
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Operating temperature: -40...125°C
Case: SO8
Output current: -1...0.5A
Pulse fall time: 20ns
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1395BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1
Operating temperature: -40...125°C
Case: SO16
Output current: 1A
Number of channels: 1
Operating voltage: 9.3...20V DC
Frequency: 48.5kHz...1.11MHz
Kind of integrated circuit: resonant mode controller
Type of integrated circuit: PMIC
Topology: push-pull; resonant LLC
Mounting: SMD
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1
Operating temperature: -40...125°C
Case: SO16
Output current: 1A
Number of channels: 1
Operating voltage: 9.3...20V DC
Frequency: 48.5kHz...1.11MHz
Kind of integrated circuit: resonant mode controller
Type of integrated circuit: PMIC
Topology: push-pull; resonant LLC
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MPSA42G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTR4003NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 10518 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 736+ | 0.097 EUR |
| 784+ | 0.091 EUR |
| 814+ | 0.088 EUR |
| 1062+ | 0.067 EUR |
| 1174+ | 0.061 EUR |
| 1500+ | 0.058 EUR |
| 3000+ | 0.053 EUR |
| 9000+ | 0.047 EUR |
| NTR4003NT3G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74AC139MTCX |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 119+ | 0.6 EUR |
| 140+ | 0.51 EUR |
| 158+ | 0.45 EUR |
| 176+ | 0.41 EUR |
| 250+ | 0.35 EUR |
| 1000+ | 0.29 EUR |
| 74AC541SC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Case: SO20
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
Manufacturer series: AC
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Case: SO20
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
Manufacturer series: AC
Mounting: SMD
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 115+ | 0.63 EUR |
| 120+ | 0.6 EUR |
| 122+ | 0.59 EUR |
| 127+ | 0.57 EUR |
| 130+ | 0.55 EUR |
| 190+ | 0.54 EUR |
| 266+ | 0.53 EUR |
| 74AC541MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
Manufacturer series: AC
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
Manufacturer series: AC
Mounting: SMD
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 120+ | 0.6 EUR |
| 133+ | 0.54 EUR |