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SZ1SMB5948BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NTMFS0D9N03CGT1G ONSEMI ntmfs0d9n03cg-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D8N03CT1G ONSEMI ntmfs0d8n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D55N03CGT1G ONSEMI ntmfs0d55n03cg-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D5N03CT1G ONSEMI ntmfs0d5n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D6N03CT1G ONSEMI ntmfs0d6n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D7N03CGT1G ONSEMI ntmfs0d7n03cg-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D8N02P1ET1G ONSEMI ntmfs0d8n02p1e-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
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NTMFS0D9N04XMT1G ONSEMI ntmfs0d9n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
1500+1.27 EUR
Mindestbestellmenge: 1500
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1N5362BG 1N5362BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5362BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FOD8480 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
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FOD8482 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
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FOD8480T ONSEMI fod8480-d.pdf Category: Unclassified
Description: FOD8480T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.56 EUR
Mindestbestellmenge: 1000
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ESD9R3.3ST5G ESD9R3.3ST5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAAB4DB9A3C7E27&compId=ESD9R3.3ST5G-DTE.PDF?ci_sign=92b556fbe3efc2c533d83a05adbd46efca29e1a9 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
172+0.42 EUR
211+0.34 EUR
230+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 122
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ESD9L3.3ST5G ESD9L3.3ST5G ONSEMI esd9l-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
248+0.29 EUR
293+0.24 EUR
582+0.12 EUR
Mindestbestellmenge: 200
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ESD9X3.3ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
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SZESD9C3.3ST5G ONSEMI esd9c3.3s-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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SZESD9R3.3ST5G ONSEMI esd9r3.3s-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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SZESD9X3.3ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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UESD3.3DT5G ONSEMI uesd3.3dt5g-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Produkt ist nicht verfügbar
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SRDA3.3-4DR2G ONSEMI srda3.3-4-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
Produkt ist nicht verfügbar
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SZUESD3.3DT5G ONSEMI uesd3.3dt5g-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCS21674DMG100R2G ONSEMI ncs21673-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Produkt ist nicht verfügbar
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NUP2202W1T2G ONSEMI nup2202w1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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LP2950CZ-5.0RPG LP2950CZ-5.0RPG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Produkt ist nicht verfügbar
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MBRS140T3G MBRS140T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699BA36AFFF0469&compId=MBRS140T3G.PDF?ci_sign=c115f32124d7ad14f1eb9fe924654f565e69849c Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 4006 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
256+0.28 EUR
317+0.23 EUR
353+0.2 EUR
410+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
2500+0.1 EUR
Mindestbestellmenge: 193
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MBRS2040LT3G MBRS2040LT3G ONSEMI MBRS2040LT3G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
auf Bestellung 3942 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
220+0.33 EUR
277+0.26 EUR
307+0.23 EUR
353+0.2 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 162
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MBRS3200T3G MBRS3200T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDFC55B2782FA8&compId=MBRS3200T3G-DTE.PDF?ci_sign=4f2f6745ea73fa4d8e67a0f9f1783e5824d0d12e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
148+0.48 EUR
161+0.44 EUR
197+0.36 EUR
217+0.33 EUR
250+0.29 EUR
500+0.27 EUR
Mindestbestellmenge: 114
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MBRS3201T3G MBRS3201T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE03486E654FA8&compId=MBRS3201T3G-DTE.PDF?ci_sign=4a742271fdd1a0a19ece8565d86a4807f54ee12d description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
99+0.72 EUR
106+0.68 EUR
126+0.57 EUR
136+0.53 EUR
250+0.5 EUR
Mindestbestellmenge: 88
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MBRS410LT3G MBRS410LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE0BCB626FAFA8&compId=MBRS410LT3G-DTE.PDF?ci_sign=08af84a6f94a3f2d4a8656e94b57e621e3473539 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 1244 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
54+1.34 EUR
Mindestbestellmenge: 50
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MBRS230LT3G MBRS230LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDEF8ACA9A4FA8&compId=MBRS230LT3G-DTE.PDF?ci_sign=8ef7af47fe35d19eb29a36eff44c0e3a6e1d5228 description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
auf Bestellung 1801 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
179+0.4 EUR
192+0.37 EUR
243+0.29 EUR
274+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
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MBRS2H100T3G MBRS2H100T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2F002BA74D97820&compId=MBRS2H100T3G.pdf?ci_sign=4b2d94dde7572bfffae8201f380693d09c57f0fb Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
210+0.34 EUR
240+0.3 EUR
Mindestbestellmenge: 162
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MBRS120T3G MBRS120T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A4C818B59D5AC74A&compId=MBRS120T3G.PDF?ci_sign=cd72bece85a6d35c8b787d117b60786adb81cddc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
158+0.46 EUR
Mindestbestellmenge: 122
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MBRS320T3G ONSEMI mbrs340t3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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MBRS330T3G ONSEMI mbrs340t3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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NJD35N04G ONSEMI njd35n04-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
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MJD350T4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CDDEC5F654143&compId=MJD340G.pdf?ci_sign=12472b6532ea9144316d04054ab6c4b191e42f7f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Produkt ist nicht verfügbar
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NJD35N04T4G ONSEMI njd35n04-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
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NJVNJD35N04T4G ONSEMI njd35n04-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD350T4G ONSEMI mjd340-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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SS28 ONSEMI ss29-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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NXH006P120M3F2PTHG ONSEMI nxh006p120m3f2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH006P120MNF2PTG ONSEMI nxh006p120mnf2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NTDV20N06T4G-VF01 ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHCT32ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63425304FA0D3&compId=MC74VHCT32A-D.pdf?ci_sign=21fb6f002e8af104ef90041724044c9fd927ee84 Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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MC74VHCT32ADTR2G MC74VHCT32ADTR2G ONSEMI mc74vhct32a-d.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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S310FA ONSEMI ss36fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
204+0.35 EUR
233+0.31 EUR
249+0.29 EUR
252+0.28 EUR
Mindestbestellmenge: 173
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NCV317LBDR2G NCV317LBDR2G ONSEMI pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCABD070943C7440CE&compId=LM317L_NCV317L.PDF?ci_sign=4ff4b3253c954d878c959a39e31ee50c32badad1 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
Produkt ist nicht verfügbar
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NCV317LBZG NCV317LBZG ONSEMI lm317l-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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NCV317LBZRAG NCV317LBZRAG ONSEMI lm317l-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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NV25M01DTUTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF9860D5&compId=NV25M01-D.pdf?ci_sign=2a389208944ecb8c9c6473d4cbd626fffd5d3677 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
Produkt ist nicht verfügbar
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CAT25M01VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A836400D5&compId=CAT25M01-D.pdf?ci_sign=31be0b46876b051a569dbe757dc94664bb8b864b Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
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CAT25M01XI-T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A836540D5&compId=CAT25M01-D.pdf?ci_sign=f79cbc8af25958c96286c34c9926137b0973231f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
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CAT25M01YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F35A0D5&compId=CAT25M01-D.pdf?ci_sign=4322ed1bd4ccaa85ca9dd038f8e67c768bc60ff2 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
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CAV25M01VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84280D5&compId=CAV25M01-D.pdf?ci_sign=c69c99b1bdcdb4f86828f2de1c6ba13c97320f4d Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
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CAV25M01YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB843C0D5&compId=CAV25M01-D.pdf?ci_sign=ea047f271ddf6391d40e8c0076eb3aadfbbe90c1 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
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MJ11028G MJ11028G ONSEMI MJ11028G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 50A
Kind of transistor: Darlington
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
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VESTL431BVDR2G ONSEMI Category: Unclassified
Description: VESTL431BVDR2G
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.11 EUR
Mindestbestellmenge: 2500
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MC14046BDWG ONSEMI mc14046b-d.pdf Category: Unclassified
Description: MC14046BDWG
auf Bestellung 2256 Stücke:
Lieferzeit 14-21 Tag (e)
141+0.64 EUR
Mindestbestellmenge: 141
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SZ1SMB5948BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NTMFS0D9N03CGT1G ntmfs0d9n03cg-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D8N03CT1G ntmfs0d8n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D55N03CGT1G ntmfs0d55n03cg-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D5N03CT1G ntmfs0d5n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS0D6N03CT1G ntmfs0d6n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D7N03CGT1G ntmfs0d7n03cg-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NTMFS0D8N02P1ET1G ntmfs0d8n02p1e-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
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NTMFS0D9N04XMT1G ntmfs0d9n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+1.27 EUR
Mindestbestellmenge: 1500
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1N5362BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5362BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5362BRLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FOD8480 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
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FOD8482 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EFD038F00C7&compId=FOD8480.pdf?ci_sign=aebc996e620bafa81fef6adc02d51d79677aaeb7
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
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FOD8480T fod8480-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FOD8480T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.56 EUR
Mindestbestellmenge: 1000
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ESD9R3.3ST5G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAAB4DB9A3C7E27&compId=ESD9R3.3ST5G-DTE.PDF?ci_sign=92b556fbe3efc2c533d83a05adbd46efca29e1a9
ESD9R3.3ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
172+0.42 EUR
211+0.34 EUR
230+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
ESD9L3.3ST5G esd9l-d.pdf
ESD9L3.3ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
248+0.29 EUR
293+0.24 EUR
582+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
ESD9X3.3ST5G esd9x3.3st5g-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SZESD9C3.3ST5G esd9c3.3s-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SZESD9R3.3ST5G esd9r3.3s-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZESD9X3.3ST5G esd9x3.3st5g-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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UESD3.3DT5G uesd3.3dt5g-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Produkt ist nicht verfügbar
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SRDA3.3-4DR2G srda3.3-4-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZUESD3.3DT5G uesd3.3dt5g-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCS21674DMG100R2G ncs21673-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Produkt ist nicht verfügbar
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NUP2202W1T2G nup2202w1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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LP2950CZ-5.0RPG lp2950-d.pdf
LP2950CZ-5.0RPG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRS140T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699BA36AFFF0469&compId=MBRS140T3G.PDF?ci_sign=c115f32124d7ad14f1eb9fe924654f565e69849c
MBRS140T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 4006 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
256+0.28 EUR
317+0.23 EUR
353+0.2 EUR
410+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
2500+0.1 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
MBRS2040LT3G MBRS2040LT3G.PDF
MBRS2040LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
auf Bestellung 3942 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
220+0.33 EUR
277+0.26 EUR
307+0.23 EUR
353+0.2 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
MBRS3200T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDFC55B2782FA8&compId=MBRS3200T3G-DTE.PDF?ci_sign=4f2f6745ea73fa4d8e67a0f9f1783e5824d0d12e
MBRS3200T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
148+0.48 EUR
161+0.44 EUR
197+0.36 EUR
217+0.33 EUR
250+0.29 EUR
500+0.27 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
MBRS3201T3G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE03486E654FA8&compId=MBRS3201T3G-DTE.PDF?ci_sign=4a742271fdd1a0a19ece8565d86a4807f54ee12d
MBRS3201T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
99+0.72 EUR
106+0.68 EUR
126+0.57 EUR
136+0.53 EUR
250+0.5 EUR
Mindestbestellmenge: 88
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MBRS410LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEE0BCB626FAFA8&compId=MBRS410LT3G-DTE.PDF?ci_sign=08af84a6f94a3f2d4a8656e94b57e621e3473539
MBRS410LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 1244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
54+1.34 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
MBRS230LT3G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDEF8ACA9A4FA8&compId=MBRS230LT3G-DTE.PDF?ci_sign=8ef7af47fe35d19eb29a36eff44c0e3a6e1d5228
MBRS230LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
auf Bestellung 1801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
179+0.4 EUR
192+0.37 EUR
243+0.29 EUR
274+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
MBRS2H100T3G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2F002BA74D97820&compId=MBRS2H100T3G.pdf?ci_sign=4b2d94dde7572bfffae8201f380693d09c57f0fb
MBRS2H100T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
210+0.34 EUR
240+0.3 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
MBRS120T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A4C818B59D5AC74A&compId=MBRS120T3G.PDF?ci_sign=cd72bece85a6d35c8b787d117b60786adb81cddc
MBRS120T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
158+0.46 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
MBRS320T3G mbrs340t3-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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MBRS330T3G mbrs340t3-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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NJD35N04G njd35n04-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD350T4G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CDDEC5F654143&compId=MJD340G.pdf?ci_sign=12472b6532ea9144316d04054ab6c4b191e42f7f
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Produkt ist nicht verfügbar
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NJD35N04T4G njd35n04-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVNJD35N04T4G njd35n04-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD350T4G mjd340-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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SS28 ss29-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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NXH006P120M3F2PTHG nxh006p120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH006P120MNF2PTG nxh006p120mnf2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NTDV20N06T4G-VF01
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHCT32ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63425304FA0D3&compId=MC74VHCT32A-D.pdf?ci_sign=21fb6f002e8af104ef90041724044c9fd927ee84
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHCT32ADTR2G mc74vhct32a-d.pdf
MC74VHCT32ADTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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S310FA ss36fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
204+0.35 EUR
233+0.31 EUR
249+0.29 EUR
252+0.28 EUR
Mindestbestellmenge: 173
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NCV317LBDR2G pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCABD070943C7440CE&compId=LM317L_NCV317L.PDF?ci_sign=4ff4b3253c954d878c959a39e31ee50c32badad1
NCV317LBDR2G
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
Produkt ist nicht verfügbar
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NCV317LBZG lm317l-d.pdf
NCV317LBZG
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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NCV317LBZRAG lm317l-d.pdf
NCV317LBZRAG
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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NV25M01DTUTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF9860D5&compId=NV25M01-D.pdf?ci_sign=2a389208944ecb8c9c6473d4cbd626fffd5d3677
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
Produkt ist nicht verfügbar
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CAT25M01VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A836400D5&compId=CAT25M01-D.pdf?ci_sign=31be0b46876b051a569dbe757dc94664bb8b864b
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25M01XI-T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A836540D5&compId=CAT25M01-D.pdf?ci_sign=f79cbc8af25958c96286c34c9926137b0973231f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25M01YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F35A0D5&compId=CAT25M01-D.pdf?ci_sign=4322ed1bd4ccaa85ca9dd038f8e67c768bc60ff2
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV25M01VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84280D5&compId=CAV25M01-D.pdf?ci_sign=c69c99b1bdcdb4f86828f2de1c6ba13c97320f4d
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV25M01YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB843C0D5&compId=CAV25M01-D.pdf?ci_sign=ea047f271ddf6391d40e8c0076eb3aadfbbe90c1
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
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MJ11028G MJ11028G.PDF
MJ11028G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 50A
Kind of transistor: Darlington
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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VESTL431BVDR2G
Hersteller: ONSEMI
Category: Unclassified
Description: VESTL431BVDR2G
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.11 EUR
Mindestbestellmenge: 2500
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MC14046BDWG mc14046b-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: MC14046BDWG
auf Bestellung 2256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
141+0.64 EUR
Mindestbestellmenge: 141
Im Einkaufswagen  Stück im Wert von  UAH
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