| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SZ1SMB5948BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 91V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D9N03CGT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 131.4nC On-state resistance: 0.9mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 144W Drain current: 298A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D8N03CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 50nC On-state resistance: 0.74mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 150W Drain current: 337A Case: SO8 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D55N03CGT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 173nC On-state resistance: 580µΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 199W Drain current: 462A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D5N03CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 80nC On-state resistance: 520µΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 200W Drain current: 464A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D6N03CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 65nC On-state resistance: 620µΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 200W Drain current: 433A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D7N03CGT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 147nC On-state resistance: 0.65mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 187W Drain current: 409A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D8N02P1ET1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8 Power dissipation: 139W Mounting: SMD Kind of package: reel; tape Case: SO8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 52nC On-state resistance: 0.68mΩ Drain-source voltage: 25V Drain current: 365A Pulsed drain current: 762A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS0D9N04XMT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5362BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| 1N5362BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD8480 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SOP6 Turn-on time: 15ns Turn-off time: 10ns Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -0.5...35V Manufacturer series: FOD848x |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD8482 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SOP6 Turn-on time: 15ns Turn-off time: 10ns Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -0.5...35V Manufacturer series: FOD848x |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD8480T | ONSEMI |
Category: UnclassifiedDescription: FOD8480T |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD9R3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD Type of diode: TVS Breakdown voltage: 4.8V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Kind of package: reel; tape Version: ESD Leakage current: 1nA Peak pulse power dissipation: 0.15W Max. forward impulse current: 1A |
auf Bestellung 2401 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD Type of diode: TVS Breakdown voltage: 4.8V Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Kind of package: reel; tape Version: ESD Capacitance: 0.5...0.9pF Leakage current: 1µA Peak pulse power dissipation: 0.15W |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SZESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SZESD9R3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 4.8V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SZESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| UESD3.3DT5G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: universal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SRDA3.3-4DR2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 3.3V Number of channels: 4 Kind of package: reel; tape Application: universal Peak pulse power dissipation: 0.5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SZUESD3.3DT5G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCS21674DMG100R2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV Mounting: SMT Operating temperature: -40...125°C Input bias current: 1µA Input offset current: 15µA Input offset voltage: 0.5mV Slew rate: 2V/μs Voltage supply range: 2.7...5.5V DC Kind of package: reel; tape Gain: 100V/V Bandwidth: 240kHz Number of channels: dual Type of integrated circuit: instrumentation amplifier Case: Micro8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NUP2202W1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape Mounting: SMD Kind of package: reel; tape Case: SC88 Type of diode: TVS array Number of channels: 2 Application: universal Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LP2950CZ-5.0RPG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBRS140T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
auf Bestellung 4006 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS2040LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. load current: 4A Kind of package: reel; tape |
auf Bestellung 3942 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS3200T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape |
auf Bestellung 557 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS3201T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape |
auf Bestellung 429 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS410LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 10V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.225V Kind of package: reel; tape |
auf Bestellung 1244 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS230LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape Max. load current: 4A |
auf Bestellung 1801 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.65V Kind of package: reel; tape Max. load current: 130A |
auf Bestellung 2377 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRS320T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MBRS330T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NJD35N04G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: tube Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MJD350T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: tube Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Frequency: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NJD35N04T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NJVNJD35N04T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Kind of transistor: Darlington Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NJVMJD350T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SS28 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 80V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH006P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 14.6mΩ Drain current: 191A Pulsed drain current: 382A Drain-source voltage: 1.2kV Power dissipation: 556W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH006P120MNF2PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -15...25V On-state resistance: 7.28mΩ Drain current: 304A Pulsed drain current: 912A Drain-source voltage: 1.2kV Power dissipation: 950W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC74VHCT32ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14 Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOIC14 Operating temperature: -55...125°C Family: VHCT Kind of package: reel; tape Kind of integrated circuit: level shifter Supply voltage: 2...5.5V DC Manufacturer series: VHCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74VHCT32ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Quiescent current: 40µA Family: VHCT Kind of package: reel; tape Supply voltage: 2...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| S310FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.85V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SOD123F |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV317LBDR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8 Kind of package: reel; tape Application: automotive industry Manufacturer series: NCV317L Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 0.1A Number of channels: 1 Tolerance: ±1.5% Output voltage: 1.2...37V Input voltage: 1.2...40V Kind of voltage regulator: adjustable; LDO; linear |
Produkt ist nicht verfügbar |
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NCV317LBZG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Kind of package: bulk Application: automotive industry Case: TO92 Mounting: THT Type of integrated circuit: voltage regulator Output current: 20mA Number of channels: 1 Output voltage: 1.2...37V Kind of voltage regulator: adjustable; linear |
Produkt ist nicht verfügbar |
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NCV317LBZRAG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Kind of package: reel; tape Application: automotive industry Case: TO92 Mounting: THT Type of integrated circuit: voltage regulator Output current: 20mA Number of channels: 1 Output voltage: 1.2...37V Kind of voltage regulator: adjustable; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NV25M01DTUTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...105°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25M01VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25M01XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25M01YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV25M01VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz Operating voltage: 2.5...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...125°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV25M01YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...125°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
MJ11028G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 300W Case: TO3 Mounting: THT Kind of package: in-tray Collector-emitter voltage: 60V Collector current: 50A Kind of transistor: Darlington |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| VESTL431BVDR2G | ONSEMI |
Category: Unclassified Description: VESTL431BVDR2G |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| MC14046BDWG | ONSEMI |
Category: UnclassifiedDescription: MC14046BDWG |
auf Bestellung 2256 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SZ1SMB5948BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D9N03CGT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D8N03CT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D55N03CGT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D5N03CT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D6N03CT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D7N03CGT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D8N02P1ET1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D9N04XMT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 1.27 EUR |
| 1N5362BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5362BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8480 |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8482 |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8480T |
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auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 1.56 EUR |
| ESD9R3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 172+ | 0.42 EUR |
| 211+ | 0.34 EUR |
| 230+ | 0.31 EUR |
| 500+ | 0.3 EUR |
| ESD9L3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 248+ | 0.29 EUR |
| 293+ | 0.24 EUR |
| 582+ | 0.12 EUR |
| ESD9X3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD9C3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD9R3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD9X3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UESD3.3DT5G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Produkt ist nicht verfügbar
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| SRDA3.3-4DR2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
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| SZUESD3.3DT5G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| NCS21674DMG100R2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
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| NUP2202W1T2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
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| LP2950CZ-5.0RPG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| MBRS140T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 4006 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 256+ | 0.28 EUR |
| 317+ | 0.23 EUR |
| 353+ | 0.2 EUR |
| 410+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2500+ | 0.1 EUR |
| MBRS2040LT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
auf Bestellung 3942 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 220+ | 0.33 EUR |
| 277+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| 353+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| MBRS3200T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 148+ | 0.48 EUR |
| 161+ | 0.44 EUR |
| 197+ | 0.36 EUR |
| 217+ | 0.33 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| MBRS3201T3G | ![]() |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 99+ | 0.72 EUR |
| 106+ | 0.68 EUR |
| 126+ | 0.57 EUR |
| 136+ | 0.53 EUR |
| 250+ | 0.5 EUR |
| MBRS410LT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 1244 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 54+ | 1.34 EUR |
| MBRS230LT3G | ![]() |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
auf Bestellung 1801 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 179+ | 0.4 EUR |
| 192+ | 0.37 EUR |
| 243+ | 0.29 EUR |
| 274+ | 0.26 EUR |
| 321+ | 0.22 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| MBRS2H100T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 210+ | 0.34 EUR |
| 240+ | 0.3 EUR |
| MBRS120T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 158+ | 0.46 EUR |
| MBRS320T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
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| MBRS330T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
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| NJD35N04G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
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| MJD350T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
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| NJD35N04T4G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Produkt ist nicht verfügbar
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| NJVNJD35N04T4G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
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| NJVMJD350T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
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| SS28 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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| NXH006P120M3F2PTHG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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| NXH006P120MNF2PTG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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| NTDV20N06T4G-VF01 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74VHCT32ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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| MC74VHCT32ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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| S310FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 204+ | 0.35 EUR |
| 233+ | 0.31 EUR |
| 249+ | 0.29 EUR |
| 252+ | 0.28 EUR |
| NCV317LBDR2G |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
Produkt ist nicht verfügbar
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| NCV317LBZG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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| NCV317LBZRAG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Produkt ist nicht verfügbar
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| NV25M01DTUTG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
Produkt ist nicht verfügbar
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| CAT25M01VI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
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| CAT25M01XI-T2 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CAT25M01YI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
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| CAV25M01VE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV25M01YE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
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| MJ11028G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 50A
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 50A
Kind of transistor: Darlington
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| VESTL431BVDR2G |
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.11 EUR |
| MC14046BDWG |
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auf Bestellung 2256 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 141+ | 0.64 EUR |











