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NCP1937C61DR2G NCP1937C61DR2G ONSEMI ncp1937-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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NTLUS020N03CTAG ONSEMI ntlus020n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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1SMA5939BT3G 1SMA5939BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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1SMB5939BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
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SZ1SMA5939BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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SZ1SMB5939BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MBRF20L60CTG ONSEMI mbr20l60ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
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MMPQ3904 ONSEMI ffb3904-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MMPQ3906 ONSEMI mmpq3906-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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TIL117M TIL117M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C0769E524E0D6&compId=TIL117M.pdf?ci_sign=6255bd598a4ec1788d4bb7227a150d18d5a5cb4e Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
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MBRS2H100T3G MBRS2H100T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2F002BA74D97820&compId=MBRS2H100T3G.pdf?ci_sign=4b2d94dde7572bfffae8201f380693d09c57f0fb Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
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162+0.44 EUR
178+0.4 EUR
220+0.33 EUR
239+0.3 EUR
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MBRD5H100T4G MBRD5H100T4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE9EBF2180E259&compId=MBRD5H100T4G.PDF?ci_sign=046d2ee92d3fd31e84a6b1f576251e8fe6a40854 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
auf Bestellung 2493 Stücke:
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60+1.2 EUR
67+1.07 EUR
72+1 EUR
104+0.69 EUR
110+0.65 EUR
1000+0.63 EUR
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MC33153PG MC33153PG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDA8908A5E0A4A18&compId=MC33153.PDF?ci_sign=c6103ac6c3c8470ab84bfe23747c7de13e8c777f description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Output current: -2...1A
Pulse fall time: 55ns
Impulse rise time: 55ns
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
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GBPC3506W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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ISL9V5036P3-F085 ONSEMI isl9v5036s3st-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FDMC0310AS-F127 ONSEMI fdmc0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
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MC14042BDR2G MC14042BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE7306E0D3&compId=MC14042B-D.pdf?ci_sign=0504a830335e29757e6b09a2f558bf5a9f6629be Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of package: reel; tape
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NCS21801SN2T1G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCS21801SQ3T2G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV21801SN2T1G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV21801SQ3T2G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV8460ADR2G NCV8460ADR2G ONSEMI ncv8460-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Supply voltage: 6...36V DC
Output current: 3A
Application: automotive industry
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BZX79C13-T50A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
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MJD32CRLG ONSEMI mjd31-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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MJD32CT4G ONSEMI mjd31-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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NJVMJD32CG ONSEMI mjd31-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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NJVMJD32CT4G ONSEMI mjd31-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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BZX79C12-T50A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
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1N5362BG 1N5362BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5362BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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FDMC6679AZ ONSEMI fdmc6679az-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
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MGSF2N02ELT1G MGSF2N02ELT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868995B17E67A745&compId=MGSF2N02EL.PDF?ci_sign=1c9d02d3db01c9e9733285cc892a4f59e688fedf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1980 Stücke:
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152+0.47 EUR
194+0.37 EUR
256+0.28 EUR
291+0.25 EUR
472+0.15 EUR
500+0.14 EUR
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MC74HC4538ADR2G MC74HC4538ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BF3CB26E0D3&compId=MC74HC4538A-D.pdf?ci_sign=4a7fc55391d017d22d31992539b5b8bd19fedd85 Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FDS4675 FDS4675 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC831677B06259&compId=FDS4675.pdf?ci_sign=4809cbb1187c7fbf052c62301643a4894d0b7257 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 470 Stücke:
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43+1.7 EUR
52+1.4 EUR
57+1.26 EUR
75+0.96 EUR
79+0.92 EUR
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FDD850N10L FDD850N10L ONSEMI fdd850n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2147 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
55+1.3 EUR
62+1.17 EUR
85+0.84 EUR
90+0.8 EUR
500+0.77 EUR
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FDI150N10 ONSEMI fdi150n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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FSL117MRIN FSL117MRIN ONSEMI FAIRS45723-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.8A
Output voltage: 700V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 61...73%
Power: 10W
Operating voltage: 7.5...24.5V DC
Produkt ist nicht verfügbar
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M74VHC1GT00DFT2G
+1
M74VHC1GT00DFT2G ONSEMI Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
Kind of gate: NAND
auf Bestellung 1106 Stücke:
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878+0.082 EUR
1106+0.064 EUR
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SS23 SS23 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDE7D18B569A9E28&compId=S210.pdf?ci_sign=1b7f7481921af0480263ee7734d19c4b561e5e54 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 2276 Stücke:
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336+0.21 EUR
355+0.2 EUR
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SS23FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MJD340T4G ONSEMI mjd340-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Produkt ist nicht verfügbar
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NJVMJD340T4G ONSEMI mjd340-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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VESNJVMJD340T4G ONSEMI Category: Unclassified
Description: VESNJVMJD340T4G
auf Bestellung 30000 Stücke:
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2500+0.21 EUR
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NVMFS5C673NLAFT1G ONSEMI nvmfs5c673nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX79C15-T50A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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BZX79C15-T50R ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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M74VHC1G126DTT1G M74VHC1G126DTT1G ONSEMI mc74vhc1g126-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
auf Bestellung 1 Stücke:
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1+71.5 EUR
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BZX84C5V6LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 140000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.02 EUR
Mindestbestellmenge: 10000
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S210 ONSEMI ss29-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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S210FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MUN5131DW1T1G MUN5131DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA8BEC4E150749&compId=MUN5131DW1.PDF?ci_sign=d513340e8a38c6068b1c67becb102ce821fe60ee Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
auf Bestellung 730 Stücke:
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730+0.097 EUR
Mindestbestellmenge: 730
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SMUN5131DW1T1G ONSEMI dta123ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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MM74HCT32M MM74HCT32M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADBD820&compId=MM74HCT32-D.pdf?ci_sign=b6c1d58012423c766c2de7b5f54e0b88c7f07fe2 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: tube
Supply voltage: 4.5...5.5V DC
auf Bestellung 264 Stücke:
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130+0.55 EUR
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153+0.47 EUR
162+0.44 EUR
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MC74HCT32ADR2G MC74HCT32ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB9D820&compId=MC74HCT32A-D.pdf?ci_sign=a5d6d73660f0e1dcf505caaf85e3133e16e7ad8e Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Delay time: 15ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
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MC74HCT32ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C84E0D3&compId=MC74HCT32A-D.pdf?ci_sign=02f4242e6c2ed3c4700d15b53355c3e96676b8df Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HCT
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MM74HCT32MTCX MM74HCT32MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADBD820&compId=MM74HCT32-D.pdf?ci_sign=b6c1d58012423c766c2de7b5f54e0b88c7f07fe2 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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MM74HCT32MX MM74HCT32MX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADBD820&compId=MM74HCT32-D.pdf?ci_sign=b6c1d58012423c766c2de7b5f54e0b88c7f07fe2 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MM74HCT08M MM74HCT08M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8F0766F364F5EA&compId=MM74HCT08M.pdf?ci_sign=74fde56779c18ca7d29c5364f688b8b2d00828b1 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 1.4mA
Family: HCT
auf Bestellung 165 Stücke:
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107+0.67 EUR
153+0.47 EUR
165+0.43 EUR
Mindestbestellmenge: 107
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MC74HCT08ADR2G MC74HCT08ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB35820&compId=MC74HCT08A-D.pdf?ci_sign=a1ea5138c805bdff00ed3b71dcdf86c03b143299 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
Produkt ist nicht verfügbar
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MC74HCT08ADTR2G MC74HCT08ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB35820&compId=MC74HCT08A-D.pdf?ci_sign=a1ea5138c805bdff00ed3b71dcdf86c03b143299 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
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NCP1937C61DR2G ncp1937-d.pdf
NCP1937C61DR2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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NTLUS020N03CTAG ntlus020n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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1SMA5939BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5939BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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1SMB5939BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
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SZ1SMA5939BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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SZ1SMB5939BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MBRF20L60CTG mbr20l60ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
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MMPQ3904 ffb3904-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MMPQ3906 mmpq3906-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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TIL117M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C0769E524E0D6&compId=TIL117M.pdf?ci_sign=6255bd598a4ec1788d4bb7227a150d18d5a5cb4e
TIL117M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
Produkt ist nicht verfügbar
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MBRS2H100T3G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2F002BA74D97820&compId=MBRS2H100T3G.pdf?ci_sign=4b2d94dde7572bfffae8201f380693d09c57f0fb
MBRS2H100T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
162+0.44 EUR
178+0.4 EUR
220+0.33 EUR
239+0.3 EUR
Mindestbestellmenge: 136
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MBRD5H100T4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE9EBF2180E259&compId=MBRD5H100T4G.PDF?ci_sign=046d2ee92d3fd31e84a6b1f576251e8fe6a40854
MBRD5H100T4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
67+1.07 EUR
72+1 EUR
104+0.69 EUR
110+0.65 EUR
1000+0.63 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
MC33153PG description pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDA8908A5E0A4A18&compId=MC33153.PDF?ci_sign=c6103ac6c3c8470ab84bfe23747c7de13e8c777f
MC33153PG
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Output current: -2...1A
Pulse fall time: 55ns
Impulse rise time: 55ns
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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GBPC3506W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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ISL9V5036P3-F085 isl9v5036s3st-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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FDMC0310AS-F127 fdmc0310as-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14042BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE7306E0D3&compId=MC14042B-D.pdf?ci_sign=0504a830335e29757e6b09a2f558bf5a9f6629be
MC14042BDR2G
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCS21801SN2T1G ncs21801-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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NCS21801SQ3T2G ncs21801-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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NCV21801SN2T1G ncs21801-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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NCV21801SQ3T2G ncs21801-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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NCV8460ADR2G ncv8460-d.pdf
NCV8460ADR2G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Supply voltage: 6...36V DC
Output current: 3A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX79C13-T50A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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MJD32CRLG mjd31-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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MJD32CT4G mjd31-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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NJVMJD32CG mjd31-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD32CT4G mjd31-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BZX79C12-T50A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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1N5362BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5362BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
1N5362BRLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FDMC6679AZ fdmc6679az-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
Produkt ist nicht verfügbar
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MGSF2N02ELT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868995B17E67A745&compId=MGSF2N02EL.PDF?ci_sign=1c9d02d3db01c9e9733285cc892a4f59e688fedf
MGSF2N02ELT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
194+0.37 EUR
256+0.28 EUR
291+0.25 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 152
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MC74HC4538ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BF3CB26E0D3&compId=MC74HC4538A-D.pdf?ci_sign=4a7fc55391d017d22d31992539b5b8bd19fedd85
MC74HC4538ADR2G
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS4675 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC831677B06259&compId=FDS4675.pdf?ci_sign=4809cbb1187c7fbf052c62301643a4894d0b7257
FDS4675
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
52+1.4 EUR
57+1.26 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 43
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FDD850N10L fdd850n10l-d.pdf
FDD850N10L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
55+1.3 EUR
62+1.17 EUR
85+0.84 EUR
90+0.8 EUR
500+0.77 EUR
Mindestbestellmenge: 46
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FDI150N10 fdi150n10-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FSL117MRIN FAIRS45723-1.pdf?t.download=true&u=5oefqw
FSL117MRIN
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.8A
Output voltage: 700V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 61...73%
Power: 10W
Operating voltage: 7.5...24.5V DC
Produkt ist nicht verfügbar
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M74VHC1GT00DFT2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
Kind of gate: NAND
auf Bestellung 1106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
878+0.082 EUR
1106+0.064 EUR
Mindestbestellmenge: 878
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SS23 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDE7D18B569A9E28&compId=S210.pdf?ci_sign=1b7f7481921af0480263ee7734d19c4b561e5e54
SS23
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 2276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
309+0.23 EUR
319+0.22 EUR
336+0.21 EUR
355+0.2 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
SS23FA ss29fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MJD340T4G mjd340-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Produkt ist nicht verfügbar
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NJVMJD340T4G mjd340-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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VESNJVMJD340T4G
Hersteller: ONSEMI
Category: Unclassified
Description: VESNJVMJD340T4G
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.21 EUR
Mindestbestellmenge: 2500
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NVMFS5C673NLAFT1G nvmfs5c673nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX79C15-T50A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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BZX79C15-T50R pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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M74VHC1G126DTT1G mc74vhc1g126-d.pdf
M74VHC1G126DTT1G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BZX84C5V6LT3G bzx84c2v4lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 140000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.02 EUR
Mindestbestellmenge: 10000
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S210 ss29-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S210FA ss29fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MUN5131DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA8BEC4E150749&compId=MUN5131DW1.PDF?ci_sign=d513340e8a38c6068b1c67becb102ce821fe60ee
MUN5131DW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
730+0.097 EUR
Mindestbestellmenge: 730
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SMUN5131DW1T1G dta123ed-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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MM74HCT32M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADBD820&compId=MM74HCT32-D.pdf?ci_sign=b6c1d58012423c766c2de7b5f54e0b88c7f07fe2
MM74HCT32M
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: tube
Supply voltage: 4.5...5.5V DC
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
130+0.55 EUR
142+0.5 EUR
153+0.47 EUR
162+0.44 EUR
Mindestbestellmenge: 93
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MC74HCT32ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB9D820&compId=MC74HCT32A-D.pdf?ci_sign=a5d6d73660f0e1dcf505caaf85e3133e16e7ad8e
MC74HCT32ADR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Delay time: 15ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MC74HCT32ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C84E0D3&compId=MC74HCT32A-D.pdf?ci_sign=02f4242e6c2ed3c4700d15b53355c3e96676b8df
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MM74HCT32MTCX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADBD820&compId=MM74HCT32-D.pdf?ci_sign=b6c1d58012423c766c2de7b5f54e0b88c7f07fe2
MM74HCT32MTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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MM74HCT32MX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADBD820&compId=MM74HCT32-D.pdf?ci_sign=b6c1d58012423c766c2de7b5f54e0b88c7f07fe2
MM74HCT32MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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MM74HCT08M pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8F0766F364F5EA&compId=MM74HCT08M.pdf?ci_sign=74fde56779c18ca7d29c5364f688b8b2d00828b1
MM74HCT08M
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 1.4mA
Family: HCT
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
153+0.47 EUR
165+0.43 EUR
Mindestbestellmenge: 107
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MC74HCT08ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB35820&compId=MC74HCT08A-D.pdf?ci_sign=a1ea5138c805bdff00ed3b71dcdf86c03b143299
MC74HCT08ADR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
Produkt ist nicht verfügbar
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MC74HCT08ADTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB35820&compId=MC74HCT08A-D.pdf?ci_sign=a1ea5138c805bdff00ed3b71dcdf86c03b143299
MC74HCT08ADTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
Produkt ist nicht verfügbar
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