| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FOD8160 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; SOP5 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Case: SOP5 Turn-on time: 22ns Turn-off time: 9ns Max. off-state voltage: 5V Output voltage: -500mV...7.5V Slew rate: 40kV/μs Transfer rate: 10Mbps |
Produkt ist nicht verfügbar |
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| FOD8163 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs Type of optocoupler: optotriac Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Case: SOP6 Turn-on time: 22ns Turn-off time: 9ns Max. off-state voltage: 5V Manufacturer series: FOD8163 Output voltage: -500mV...7.5V Slew rate: 40kV/μs Transfer rate: 10Mbps |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FOD8163R2 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 5kV; 10Mbps; SOP6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 5kV Case: SOP6 Max. off-state voltage: 5V Manufacturer series: FOD8163 Slew rate: 40kV/μs Transfer rate: 10Mbps |
Produkt ist nicht verfügbar |
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| 1N5282TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 80V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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| NRVUB1620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.895V Max. load current: 16A Kind of package: reel; tape Max. forward impulse current: 100A Application: automotive industry |
Produkt ist nicht verfügbar |
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NCP3020BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; buck; 4.7÷40VDC Type of integrated circuit: PMIC Case: SO8 Mounting: SMD Operating temperature: -40...125°C Output current: 130mA Number of channels: 1 Operating voltage: 4.7...40V DC Frequency: 530...670kHz Topology: buck |
Produkt ist nicht verfügbar |
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FDN304P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
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MOCD223M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 8µs Turn-off time: 55µs |
auf Bestellung 2413 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP1055ST136T3G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 680mA Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 15Ω Operating voltage: 7.5...10V DC |
Produkt ist nicht verfügbar |
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BD244C | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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MMSZ4701T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode Tolerance: ±5% Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Leakage current: 50nA Power dissipation: 0.5W Zener voltage: 14V Manufacturer series: MMSZ4xxT1G Case: SOD123 |
auf Bestellung 981 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2904N | ONSEMI |
Category: THT operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: THT Case: DIP8 Voltage supply range: ± 1.5...16V DC; 3...32V DC Number of channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTMTS001N06CTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 376A Pulsed drain current: 900A Power dissipation: 122W Case: Power88 Gate-source voltage: ±20V On-state resistance: 910µΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBT3906DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Mounting: SMD Collector current: 0.2A Power dissipation: 0.15W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 250MHz Polarisation: bipolar |
auf Bestellung 4784 Stücke: Lieferzeit 14-21 Tag (e) |
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SS39 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMC Mounting: SMD Max. forward voltage: 0.85V Power dissipation: 2.27W Load current: 3A Max. off-state voltage: 90V Max. forward impulse current: 100A |
auf Bestellung 2773 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC33275ST-5.0T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33275D-5.0R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33275D-3.0G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: tube Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33275D-3.3R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33275D-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33275MN-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: DFN8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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KSC3265YMTF | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Type of transistor: NPN Case: SOT23; TO236AB Kind of package: reel; tape Power dissipation: 0.2W Collector current: 0.8A Collector-emitter voltage: 25V Current gain: 160...320 Frequency: 120MHz Polarisation: bipolar Mounting: SMD |
auf Bestellung 2331 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH800H120L7QDSG | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; IGBT half-bridge,NTC thermistor Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 800A Case: PIM11 Application: for UPS; Inverter Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Mechanical mounting: screw Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZ1SMB5914BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 3.6V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
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| FDMC89521L | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Case: Power33 Kind of package: reel; tape Mounting: SMD Gate charge: 24nC On-state resistance: 27mΩ Drain current: 8.2A Power dissipation: 16W Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Polarisation: unipolar |
Produkt ist nicht verfügbar |
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NCV1413BDR2G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...125°C Application: automotive industry; for inductive load Kind of package: reel; tape Input voltage: 30V |
auf Bestellung 2272 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDLL333 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape Mounting: SMD Max. off-state voltage: 125V Load current: 0.5A Features of semiconductor devices: small signal Type of diode: switching Semiconductor structure: single diode Case: SOD80 Kind of package: reel; tape Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMTS0D6N04CLTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 554.5A; Idm: 900A; 122.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 554.5A Pulsed drain current: 900A Power dissipation: 122.7W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 420µΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMTS0D6N04CTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 533A; Idm: 900A; 122.7W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 533A Pulsed drain current: 900A Power dissipation: 122.7W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 480µΩ Mounting: SMD Gate charge: 187nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NV25640DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz Case: TSSOP8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of package: reel; tape Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...150°C Access time: 40ns Operating voltage: 2.5...5.5V Memory: 64kb EEPROM Memory organisation: 8kx8bit Clock frequency: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NV25640DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Case: SOIC8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of package: reel; tape Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...150°C Access time: 40ns Operating voltage: 2.5...5.5V Memory: 64kb EEPROM Memory organisation: 8kx8bit Clock frequency: 10MHz |
Produkt ist nicht verfügbar |
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MRS1504T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Type of diode: rectifying Load current: 1.5A Max. forward voltage: 1.02V Max. load current: 3A Max. off-state voltage: 0.4kV Max. forward impulse current: 50A |
auf Bestellung 1778 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC15005 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| GBPC15005W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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EGF1D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A; 2W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 15pF Case: SMA Max. forward voltage: 1V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 2W Kind of package: reel; tape |
auf Bestellung 5463 Stücke: Lieferzeit 14-21 Tag (e) |
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| NC7SB3257P6X | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 1; IN: 2; CMOS Mounting: SMD Technology: CMOS Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA Number of channels: 1 Number of inputs: 2 Supply voltage: 4...5V DC Case: SC70-6 Kind of integrated circuit: demultiplexer; multiplexer Kind of output: SPDT Type of integrated circuit: analog switch |
Produkt ist nicht verfügbar |
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| GBPC2502 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A Case: GBPC Type of bridge rectifier: single-phase Version: square Max. forward voltage: 1.1V Load current: 25A Max. off-state voltage: 200V Max. forward impulse current: 0.3kA Kind of package: bulk Electrical mounting: THT Leads: connectors FASTON |
Produkt ist nicht verfügbar |
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| GBPC2502W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A Case: GBPC-W Type of bridge rectifier: single-phase Version: square Max. forward voltage: 1.1V Load current: 25A Max. off-state voltage: 200V Max. forward impulse current: 0.3kA Kind of package: bulk Electrical mounting: THT Leads: wire Ø 1.0mm |
Produkt ist nicht verfügbar |
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| MJF31CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 30W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 30W Case: TO220FP Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
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NTA4001NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD Case: SC75 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Version: ESD Kind of channel: enhancement On-state resistance: 3.5Ω Gate-source voltage: ±10V Drain-source voltage: 20V Polarisation: unipolar Drain current: 0.238A Power dissipation: 0.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBC857BTT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Current gain: 220...475 Collector-emitter voltage: 45V Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
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| NTA4151PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 0.301W Case: SC75 Gate-source voltage: ±6V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SBAW56TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A Power dissipation: 0.36W Case: SC75 Mounting: SMD Kind of package: reel; tape Leakage current: 50µA Load current: 0.2A Max. forward impulse current: 0.5A Max. forward voltage: 1.25V Max. off-state voltage: 70V Application: automotive industry Semiconductor structure: common anode; double Type of diode: switching Capacitance: 2pF Reverse recovery time: 6ns |
Produkt ist nicht verfügbar |
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FDPF12N50T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC On-state resistance: 0.65Ω Kind of channel: enhancement Technology: UniFET™ Drain current: 6.9A Gate-source voltage: ±30V Drain-source voltage: 500V |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB12N50TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC On-state resistance: 0.65Ω Kind of channel: enhancement Technology: DMOS; UniFET™ Drain current: 6.9A Pulsed drain current: 46A Gate-source voltage: ±30V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
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| FAN7392MX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP16 Output current: -3...3A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 45ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
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| NTBG022N120M3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Type of transistor: N-MOSFET Power dissipation: 220W Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 142nC On-state resistance: 44mΩ Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
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| NTHL022N120M3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; Idm: 275A; 174W Type of transistor: N-MOSFET Power dissipation: 174W Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: SiC Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 137nC On-state resistance: 44mΩ Drain current: 62A Pulsed drain current: 275A Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
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| NVBG022N120M3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Type of transistor: N-MOSFET Power dissipation: 220W Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Polarisation: unipolar Gate-source voltage: -3...18V Gate charge: 142nC On-state resistance: 44mΩ Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
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TIL113M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: DIP6 Max. off-state voltage: 3V Turn-on time: 5µs CTR@If: 300%@10mA Turn-off time: 0.1ms |
auf Bestellung 972 Stücke: Lieferzeit 14-21 Tag (e) |
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MCT6 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Case: DIP8 CTR@If: 20%@10mA Collector-emitter voltage: 85V Insulation voltage: 5.3kV |
auf Bestellung 486 Stücke: Lieferzeit 14-21 Tag (e) |
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MCT61 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Case: DIP8 CTR@If: 50%@5mA Collector-emitter voltage: 85V Insulation voltage: 5.3kV |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCT6S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Case: DIP8 CTR@If: 20%@10mA Collector-emitter voltage: 85V Insulation voltage: 5kV Manufacturer series: MCT6 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 3V |
Produkt ist nicht verfügbar |
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| MCT6SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Case: DIP8 CTR@If: 20%@10mA Collector-emitter voltage: 85V Insulation voltage: 5kV Manufacturer series: MCT6 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP110AMX100TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD Mounting: SMD Operating temperature: -40...125°C Manufacturer series: NCP110 Case: XDFN4 Type of integrated circuit: voltage regulator Output current: 0.1A Output voltage: 1V Voltage drop: 0.13V Input voltage: 1.1...5.5V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear |
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NCP114AMX100TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD Manufacturer series: NCP114 Operating temperature: -40...85°C Output current: 0.3A Output voltage: 1V Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: uDFN4 Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
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NCP114AMX105TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.05V; 300mA; uDFN4; SMD Manufacturer series: NCP114 Operating temperature: -40...85°C Output current: 0.3A Output voltage: 1.05V Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: uDFN4 Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
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| NCP114BMX100TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD Mounting: SMD Operating temperature: -40...85°C Manufacturer series: NCP114 Case: uDFN4 Type of integrated circuit: voltage regulator Output current: 0.3A Output voltage: 1V Input voltage: 1.7...5.5V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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| NVTFS5C471NLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 163A; 15W; WDFN8 Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 9mΩ Kind of channel: enhancement Power dissipation: 15W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 41A Pulsed drain current: 163A Case: WDFN8 Polarisation: unipolar |
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| NVTFS5C471NLWFTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 163A; 15W; WDFNW8 Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 9mΩ Kind of channel: enhancement Power dissipation: 15W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 41A Pulsed drain current: 163A Case: WDFNW8 Polarisation: unipolar |
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| FOD8160 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; SOP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP5
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; SOP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP5
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Produkt ist nicht verfügbar
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| FOD8163 |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Produkt ist nicht verfügbar
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| FOD8163R2 |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 5kV; 10Mbps; SOP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 5kV
Case: SOP6
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 5kV; 10Mbps; SOP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 5kV
Case: SOP6
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Produkt ist nicht verfügbar
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| 1N5282TR |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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| NRVUB1620CTT4G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Produkt ist nicht verfügbar
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| NCP3020BDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 130mA
Number of channels: 1
Operating voltage: 4.7...40V DC
Frequency: 530...670kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 130mA
Number of channels: 1
Operating voltage: 4.7...40V DC
Frequency: 530...670kHz
Topology: buck
Produkt ist nicht verfügbar
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| FDN304P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 184+ | 0.39 EUR |
| 265+ | 0.27 EUR |
| 305+ | 0.23 EUR |
| 365+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| MOCD223M | ![]() |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
auf Bestellung 2413 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 102+ | 0.7 EUR |
| 118+ | 0.61 EUR |
| 131+ | 0.55 EUR |
| 145+ | 0.5 EUR |
| 500+ | 0.46 EUR |
| NCP1055ST136T3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Produkt ist nicht verfügbar
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| BD244C |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| MMSZ4701T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Tolerance: ±5%
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxT1G
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Tolerance: ±5%
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxT1G
Case: SOD123
auf Bestellung 981 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 981+ | 0.073 EUR |
| LM2904N |
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Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Case: DIP8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Case: DIP8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Produkt ist nicht verfügbar
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| NTMTS001N06CTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MBT3906DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 4784 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 1327+ | 0.054 EUR |
| 1819+ | 0.039 EUR |
| 2033+ | 0.035 EUR |
| 3000+ | 0.03 EUR |
| SS39 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Max. forward voltage: 0.85V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 90V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Max. forward voltage: 0.85V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 90V
Max. forward impulse current: 100A
auf Bestellung 2773 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 94+ | 0.76 EUR |
| 101+ | 0.71 EUR |
| 112+ | 0.64 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.51 EUR |
| MC33275ST-5.0T3G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275D-5.0R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275D-3.0G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
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| MC33275D-3.3R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33275D-3.0R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33275MN-3.0R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| KSC3265YMTF |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: NPN
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 25V
Current gain: 160...320
Frequency: 120MHz
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: NPN
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 25V
Current gain: 160...320
Frequency: 120MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 2331 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 516+ | 0.14 EUR |
| 729+ | 0.098 EUR |
| 842+ | 0.085 EUR |
| 1153+ | 0.062 EUR |
| 1309+ | 0.055 EUR |
| 1500+ | 0.051 EUR |
| NXH800H120L7QDSG |
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Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge,NTC thermistor
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 800A
Case: PIM11
Application: for UPS; Inverter
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
Technology: SiC
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge,NTC thermistor
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 800A
Case: PIM11
Application: for UPS; Inverter
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
Technology: SiC
Produkt ist nicht verfügbar
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| SZ1SMB5914BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| FDMC89521L |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Gate charge: 24nC
On-state resistance: 27mΩ
Drain current: 8.2A
Power dissipation: 16W
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Gate charge: 24nC
On-state resistance: 27mΩ
Drain current: 8.2A
Power dissipation: 16W
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
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| NCV1413BDR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry; for inductive load
Kind of package: reel; tape
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry; for inductive load
Kind of package: reel; tape
Input voltage: 30V
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 108+ | 0.66 EUR |
| 124+ | 0.58 EUR |
| 150+ | 0.48 EUR |
| 250+ | 0.42 EUR |
| FDLL333 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Features of semiconductor devices: small signal
Type of diode: switching
Semiconductor structure: single diode
Case: SOD80
Kind of package: reel; tape
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Features of semiconductor devices: small signal
Type of diode: switching
Semiconductor structure: single diode
Case: SOD80
Kind of package: reel; tape
Max. forward voltage: 1.1V
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| NVMTS0D6N04CLTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 554.5A; Idm: 900A; 122.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 554.5A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 554.5A; Idm: 900A; 122.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 554.5A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS0D6N04CTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 533A; Idm: 900A; 122.7W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 533A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 480µΩ
Mounting: SMD
Gate charge: 187nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 533A; Idm: 900A; 122.7W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 533A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 480µΩ
Mounting: SMD
Gate charge: 187nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NV25640DTHFT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
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| NV25640DWHFT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
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| MRS1504T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Type of diode: rectifying
Load current: 1.5A
Max. forward voltage: 1.02V
Max. load current: 3A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 50A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Type of diode: rectifying
Load current: 1.5A
Max. forward voltage: 1.02V
Max. load current: 3A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 50A
auf Bestellung 1778 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 447+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| GBPC15005 |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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| GBPC15005W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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| EGF1D |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A; 2W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 15pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A; 2W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 15pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 2W
Kind of package: reel; tape
auf Bestellung 5463 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 150+ | 0.48 EUR |
| 186+ | 0.39 EUR |
| 203+ | 0.35 EUR |
| 250+ | 0.31 EUR |
| 500+ | 0.28 EUR |
| NC7SB3257P6X |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; IN: 2; CMOS
Mounting: SMD
Technology: CMOS
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 1
Number of inputs: 2
Supply voltage: 4...5V DC
Case: SC70-6
Kind of integrated circuit: demultiplexer; multiplexer
Kind of output: SPDT
Type of integrated circuit: analog switch
Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; IN: 2; CMOS
Mounting: SMD
Technology: CMOS
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 1
Number of inputs: 2
Supply voltage: 4...5V DC
Case: SC70-6
Kind of integrated circuit: demultiplexer; multiplexer
Kind of output: SPDT
Type of integrated circuit: analog switch
Produkt ist nicht verfügbar
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| GBPC2502 |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: connectors FASTON
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: connectors FASTON
Produkt ist nicht verfügbar
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| GBPC2502W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC-W
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: wire Ø 1.0mm
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC-W
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: wire Ø 1.0mm
Produkt ist nicht verfügbar
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| MJF31CG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 30W
Case: TO220FP
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 30W
Case: TO220FP
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| NTA4001NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
Produkt ist nicht verfügbar
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| NSVBC857BTT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Current gain: 220...475
Collector-emitter voltage: 45V
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Current gain: 220...475
Collector-emitter voltage: 45V
Application: automotive industry
Frequency: 100MHz
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| NTA4151PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.301W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.301W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| SBAW56TT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50µA
Load current: 0.2A
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
Max. off-state voltage: 70V
Application: automotive industry
Semiconductor structure: common anode; double
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50µA
Load current: 0.2A
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
Max. off-state voltage: 70V
Application: automotive industry
Semiconductor structure: common anode; double
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 6ns
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| FDPF12N50T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.79 EUR |
| 50+ | 1.62 EUR |
| FDB12N50TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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| FAN7392MX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP16
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP16
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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| NTBG022N120M3S |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
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| NTHL022N120M3S |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; Idm: 275A; 174W
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 137nC
On-state resistance: 44mΩ
Drain current: 62A
Pulsed drain current: 275A
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; Idm: 275A; 174W
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 137nC
On-state resistance: 44mΩ
Drain current: 62A
Pulsed drain current: 275A
Drain-source voltage: 1.2kV
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| NVBG022N120M3S |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
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| TIL113M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
Turn-on time: 5µs
CTR@If: 300%@10mA
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
Turn-on time: 5µs
CTR@If: 300%@10mA
Turn-off time: 0.1ms
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 89+ | 0.81 EUR |
| 145+ | 0.49 EUR |
| 175+ | 0.41 EUR |
| MCT6 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 118+ | 0.61 EUR |
| 137+ | 0.52 EUR |
| 152+ | 0.47 EUR |
| 167+ | 0.43 EUR |
| MCT61 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 50%@5mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 50%@5mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 113+ | 0.63 EUR |
| 129+ | 0.55 EUR |
| 143+ | 0.5 EUR |
| 156+ | 0.46 EUR |
| MCT6S |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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| MCT6SD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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| NCP110AMX100TBG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.1A
Output voltage: 1V
Voltage drop: 0.13V
Input voltage: 1.1...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.1A
Output voltage: 1V
Voltage drop: 0.13V
Input voltage: 1.1...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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| NCP114AMX100TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: uDFN4
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: uDFN4
Type of integrated circuit: voltage regulator
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| NCP114AMX105TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 300mA; uDFN4; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.05V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: uDFN4
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 300mA; uDFN4; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.05V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: uDFN4
Type of integrated circuit: voltage regulator
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| NCP114BMX100TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP114
Case: uDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 300mA; uDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP114
Case: uDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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| NVTFS5C471NLTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 163A; 15W; WDFN8
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Kind of channel: enhancement
Power dissipation: 15W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 163A
Case: WDFN8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 163A; 15W; WDFN8
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Kind of channel: enhancement
Power dissipation: 15W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 163A
Case: WDFN8
Polarisation: unipolar
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| NVTFS5C471NLWFTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 163A; 15W; WDFNW8
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Kind of channel: enhancement
Power dissipation: 15W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 163A
Case: WDFNW8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 163A; 15W; WDFNW8
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Kind of channel: enhancement
Power dissipation: 15W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 163A
Case: WDFNW8
Polarisation: unipolar
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