Foto | Bezeichnung | Hersteller | Beschreibung |
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NCP1937C61DR2G | ONSEMI |
![]() Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
NTLUS020N03CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Pulsed drain current: 24A Power dissipation: 1.52W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1SMA5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
1SMB5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 3W Zener voltage: 39V Manufacturer series: 1SMB59xxBT3G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SZ1SMA5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SZ1SMB5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 3W Zener voltage: 39V Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MBRF20L60CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.69V Max. forward impulse current: 0.24kA Kind of package: tube Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MMPQ3904 | ONSEMI |
![]() Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16 Type of transistor: NPN x4 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.8W Case: SO16 Current gain: 75 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MMPQ3906 | ONSEMI |
![]() Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16 Type of transistor: PNP x4 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.8W Case: SO16 Current gain: 75 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TIL117M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 Turn-on time: 10µs CTR@If: 50%@10mA Turn-off time: 10µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MBRS2H100T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.65V Load current: 2A Max. load current: 130A Max. off-state voltage: 100V Semiconductor structure: single diode Case: SMB |
auf Bestellung 2477 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRD5H100T4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Max. load current: 10A |
auf Bestellung 2493 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33153PG | ONSEMI |
![]() ![]() Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Mounting: SMD Operating temperature: -40...105°C Protection: over current OCP; short circuit protection SCP; undervoltage UVP Output current: -2...1A Pulse fall time: 55ns Impulse rise time: 55ns Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Kind of package: tube Case: DIP8 Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Kind of output: inverting |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC3506W | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ISL9V5036P3-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 360V Collector current: 31A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±10V Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FDMC0310AS-F127 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Case: MLP8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 52nC On-state resistance: 5.8mΩ Gate-source voltage: ±20V Drain current: 21A Drain-source voltage: 30V Power dissipation: 36W Pulsed drain current: 100A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC14042BDR2G | ONSEMI |
![]() Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: latch Number of channels: 4 Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Technology: CMOS Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
NCS21801SN2T1G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Case: SOT23-5 Number of channels: single Input offset current: 400pA Input bias current: 0.6nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCS21801SQ3T2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Case: SC70-5 Number of channels: single Input offset current: 400pA Input bias current: 0.6nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCV21801SN2T1G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA Mounting: SMT Operating temperature: -40...150°C Kind of package: reel; tape Case: SOT23-5 Number of channels: single Input offset current: 2.5nA Input bias current: 5nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCV21801SQ3T2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC Mounting: SMT Operating temperature: -40...150°C Kind of package: reel; tape Case: SC70-5 Number of channels: single Input offset current: 2.5nA Input bias current: 5nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NCV8460ADR2G | ONSEMI |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD Kind of package: reel; tape Case: SO8 Kind of output: N-Channel Kind of integrated circuit: high-side Type of integrated circuit: power switch On-state resistance: 0.4Ω Number of channels: 1 Supply voltage: 6...36V DC Output current: 3A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
BZX79C13-T50A | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MJD32CRLG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MJD32CT4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NJVMJD32CG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NJVMJD32CT4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BZX79C12-T50A | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1N5362BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5362BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FDMC6679AZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: WDFN8 Drain-source voltage: -30V Drain current: -20A On-state resistance: 15mΩ Power dissipation: 41W Gate-source voltage: ±25V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MGSF2N02ELT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 85mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC4538ADR2G | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FDS4675 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD850N10L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.1A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2147 Stücke: Lieferzeit 14-21 Tag (e) |
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FDI150N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FSL117MRIN | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 0.8A Output voltage: 700V Frequency: 67kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 11Ω Duty cycle factor: 61...73% Power: 10W Operating voltage: 7.5...24.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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M74VHC1GT00DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: TTL Supply voltage: 2...5.5V DC Mounting: SMD Case: SC88A Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC Number of inputs: 2 Kind of gate: NAND |
auf Bestellung 1106 Stücke: Lieferzeit 14-21 Tag (e) |
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SS23 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 2276 Stücke: Lieferzeit 14-21 Tag (e) |
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SS23FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MJD340T4G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NJVMJD340T4G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
VESNJVMJD340T4G | ONSEMI |
Category: Unclassified Description: VESNJVMJD340T4G |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C673NLAFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 23W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BZX79C15-T50A | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BZX79C15-T50R | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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M74VHC1G126DTT1G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: VHC |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C5V6LT3G | ONSEMI |
![]() Description: Diode: Zener Type of diode: Zener |
auf Bestellung 140000 Stücke: Lieferzeit 14-21 Tag (e) |
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S210 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.85V Max. forward impulse current: 50A Max. off-state voltage: 100V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S210FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SOD123F Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.85V Max. forward impulse current: 50A Max. off-state voltage: 100V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MUN5131DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5131DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Current gain: 8...15 Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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MM74HCT32M | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Delay time: 10ns Kind of package: tube Supply voltage: 4.5...5.5V DC |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HCT32ADR2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HCT Delay time: 15ns Kind of package: reel; tape Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
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MC74HCT32ADTR2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HCT Kind of package: reel; tape Supply voltage: 2...6V DC Manufacturer series: HCT |
Produkt ist nicht verfügbar |
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MM74HCT32MTCX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: HCT Delay time: 10ns Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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MM74HCT32MX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Delay time: 10ns Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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MM74HCT08M | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 1.4mA Family: HCT |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HCT08ADR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 15ns |
Produkt ist nicht verfügbar |
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MC74HCT08ADTR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 15ns |
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NCP1937C61DR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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NTLUS020N03CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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1SMA5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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1SMB5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
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SZ1SMA5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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SZ1SMB5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MBRF20L60CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
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MMPQ3904 |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MMPQ3906 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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TIL117M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
Produkt ist nicht verfügbar
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MBRS2H100T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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136+ | 0.53 EUR |
162+ | 0.44 EUR |
178+ | 0.4 EUR |
220+ | 0.33 EUR |
239+ | 0.3 EUR |
MBRD5H100T4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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60+ | 1.2 EUR |
67+ | 1.07 EUR |
72+ | 1 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
1000+ | 0.63 EUR |
MC33153PG | ![]() |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Output current: -2...1A
Pulse fall time: 55ns
Impulse rise time: 55ns
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Output current: -2...1A
Pulse fall time: 55ns
Impulse rise time: 55ns
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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9+ | 7.95 EUR |
GBPC3506W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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ISL9V5036P3-F085 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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FDMC0310AS-F127 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14042BDR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of package: reel; tape
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of package: reel; tape
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NCS21801SN2T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCS21801SQ3T2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV21801SN2T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV21801SQ3T2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV8460ADR2G |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Supply voltage: 6...36V DC
Output current: 3A
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Supply voltage: 6...36V DC
Output current: 3A
Application: automotive industry
Produkt ist nicht verfügbar
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BZX79C13-T50A |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
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MJD32CRLG |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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MJD32CT4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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NJVMJD32CG |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJD32CT4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BZX79C12-T50A |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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1N5362BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.25 EUR |
1N5362BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FDMC6679AZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
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MGSF2N02ELT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
194+ | 0.37 EUR |
256+ | 0.28 EUR |
291+ | 0.25 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |
MC74HC4538ADR2G |
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Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDS4675 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.7 EUR |
52+ | 1.4 EUR |
57+ | 1.26 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
FDD850N10L |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2147 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.57 EUR |
55+ | 1.3 EUR |
62+ | 1.17 EUR |
85+ | 0.84 EUR |
90+ | 0.8 EUR |
500+ | 0.77 EUR |
FDI150N10 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSL117MRIN |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.8A
Output voltage: 700V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 61...73%
Power: 10W
Operating voltage: 7.5...24.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.8A
Output voltage: 700V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 61...73%
Power: 10W
Operating voltage: 7.5...24.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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M74VHC1GT00DFT2G |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
Kind of gate: NAND
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
Kind of gate: NAND
auf Bestellung 1106 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
878+ | 0.082 EUR |
1106+ | 0.064 EUR |
SS23 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 2276 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
309+ | 0.23 EUR |
319+ | 0.22 EUR |
336+ | 0.21 EUR |
355+ | 0.2 EUR |
SS23FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MJD340T4G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJD340T4G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VESNJVMJD340T4G |
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.21 EUR |
NVMFS5C673NLAFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C15-T50A |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
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BZX79C15-T50R |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
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M74VHC1G126DTT1G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
BZX84C5V6LT3G |
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auf Bestellung 140000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.02 EUR |
S210 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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S210FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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MUN5131DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
730+ | 0.097 EUR |
SMUN5131DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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MM74HCT32M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: tube
Supply voltage: 4.5...5.5V DC
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
130+ | 0.55 EUR |
142+ | 0.5 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
MC74HCT32ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Delay time: 15ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Delay time: 15ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
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MC74HCT32ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MM74HCT32MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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MM74HCT32MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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MM74HCT08M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 1.4mA
Family: HCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 1.4mA
Family: HCT
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
153+ | 0.47 EUR |
165+ | 0.43 EUR |
MC74HCT08ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
Produkt ist nicht verfügbar
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MC74HCT08ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
Produkt ist nicht verfügbar
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