NJVNJD2873T4G onsemi
Hersteller: onsemi
Description: TRANS NPN 50V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.68 W
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.61 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NJVNJD2873T4G onsemi
Description: TRANS NPN 50V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 65MHz, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.68 W, Qualification: AEC-Q101.
Weitere Produktangebote NJVNJD2873T4G nach Preis ab 0.55 EUR bis 2.34 EUR
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NJVNJD2873T4G | onsemi |
Bipolar Transistors - BJT BIPOLAR XTSR 2A/50V |
auf Bestellung 4958 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVNJD2873T4G | onsemi |
Description: TRANS NPN 50V 2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 65MHz Supplier Device Package: DPAK Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.68 W Qualification: AEC-Q101 |
auf Bestellung 3914 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVNJD2873T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 12.5W; DPAK; automotive industry Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 12.5W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 120...360 Kind of package: reel; tape Case: DPAK Frequency: 65MHz Collector current: 2A |
auf Bestellung 2294 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NJVNJD2873T4G |
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Hersteller: onsemi
Bipolar Transistors - BJT BIPOLAR XTSR 2A/50V
Bipolar Transistors - BJT BIPOLAR XTSR 2A/50V
auf Bestellung 4958 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.12 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.62 EUR |
| 2500+ | 0.55 EUR |
| NJVNJD2873T4G |
|
Hersteller: onsemi
Description: TRANS NPN 50V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.68 W
Qualification: AEC-Q101
Description: TRANS NPN 50V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.68 W
Qualification: AEC-Q101
auf Bestellung 3914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| NJVNJD2873T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 12.5W; DPAK; automotive industry
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 12.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: DPAK
Frequency: 65MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 12.5W; DPAK; automotive industry
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 12.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: DPAK
Frequency: 65MHz
Collector current: 2A
auf Bestellung 2294 Stücke:
Lieferzeit 14-21 Tag (e)