NVMFWS0D7N04XMT1G onsemi
Hersteller: onsemiDescription: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 331A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.74 EUR |
| 10+ | 3.74 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.13 EUR |
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Technische Details NVMFWS0D7N04XMT1G onsemi
Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 331A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V.
Weitere Produktangebote NVMFWS0D7N04XMT1G nach Preis ab 1.99 EUR bis 4.45 EUR
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| NVMFWS0D7N04XMT1G | Hersteller : onsemi |
MOSFET 40V T10M IN S08FL PACKAGE |
auf Bestellung 1500 Stücke: Lieferzeit 486-490 Tag (e) |
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| NVMFWS0D7N04XMT1G | Hersteller : ON Semiconductor |
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| NVMFWS0D7N04XMT1G | Hersteller : ONSEMI |
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NVMFWS0D7N04XMT1G | Hersteller : onsemi |
Description: 40V T10M IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 331A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V |
Produkt ist nicht verfügbar |