NVMFWS0D7N04XMT1G onsemi

Description: 40V T10M IN S08FL PACKAGE, Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Power Dissipation (Max): 134W (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 331A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).