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FOD3184 | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 5kV Case: DIP8 Max. off-state voltage: 5V Turn-on time: 38ns Output voltage: 0...35V Turn-off time: 24ns Slew rate: 50kV/μs Kind of output: transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FOD3184S | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: MOSFET Insulation voltage: 5kV Case: PDIP8 Max. off-state voltage: 5V Manufacturer series: FOD3184 Slew rate: 50kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FOD3184SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SMD8 Conform to the norm: UL Max. off-state voltage: 5V Number of pins: 8 Manufacturer series: FOD3184 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD3184SDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SMD8 Conform to the norm: UL Max. off-state voltage: 5V Number of pins: 8 Manufacturer series: FOD3184 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHCT125ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: SO14 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Technology: CMOS Quiescent current: 40µA Number of channels: 4 Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LM2575D2T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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| NE521DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT Kind of comparator: fast Mounting: SMT Delay time: 8.2ns Input offset voltage: 7.5mV Type of integrated circuit: comparator Operating temperature: 0...70°C Number of comparators: 2 Input bias current: 7.5µA Kind of package: reel; tape Input offset current: 1µA Case: SO14 Operating voltage: 4.75...5.25/-4.75...-5.25V |
Produkt ist nicht verfügbar |
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GBU4K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TL431BIDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBRS360T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape |
auf Bestellung 11503 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC4040ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Number of channels: 1 Manufacturer series: HC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC4040ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Number of channels: 1 Manufacturer series: HC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCV2904DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; SO8; 13mV; 200nA Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 3...32V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 2.4V/μs Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV2904DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; Micro8; 13mV; 200nA Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 3...32V DC Case: Micro8 Operating temperature: -40...125°C Slew rate: 2.4V/μs Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MJ2955G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 15A Power dissipation: 115W Case: TO3; TO204 Current gain: 20...70 Mounting: THT Kind of package: in-tray Frequency: 2.5MHz |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR16 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 300MHz Collector current: 0.8A Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 0.35W Polarisation: bipolar Type of transistor: PNP |
auf Bestellung 3287 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C3V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
auf Bestellung 3065 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5361BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Kind of package: bulk Case: CASE017AA |
auf Bestellung 620 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5361BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Kind of package: reel; tape Case: CASE017AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMYS016N10MCLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 264A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMFS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMFWS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Kind of package: reel; tape Case: DFN5 On-state resistance: 14mΩ Mounting: SMD Pulsed drain current: 243A Power dissipation: 32W Gate charge: 19nC Polarisation: unipolar Drain current: 46A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14051BDR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 600µA Technology: CMOS Kind of output: SP8T |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NIV1161MTTAG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry Case: WDFN6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NIV2161MTTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape Case: WDFN10 Mounting: SMD Number of channels: 2 Semiconductor structure: bidirectional Kind of package: reel; tape Type of diode: TVS array Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NIS1161MTTAG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 23V; WDFN6; reel,tape Case: WDFN6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Max. off-state voltage: 16V Breakdown voltage: 23V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP5106BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FGHL40T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 234W Gate charge: 118nC Type of transistor: IGBT |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 5 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HCT4851ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 11 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HCT4852ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74ACT02DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT Technology: TTL Case: SOIC14 Type of integrated circuit: digital Kind of gate: NOR Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Number of inputs: 2 Supply voltage: 4.5...5.5V DC Family: ACT Manufacturer series: ACT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BC848CLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SC59 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DTC143ZET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...200 |
auf Bestellung 8950 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5400RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape Mounting: THT Max. forward impulse current: 200A Max. off-state voltage: 50V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: DO201AD Type of diode: rectifying |
auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5400G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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2SD1624T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SD1624S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTS4173PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 0.29W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Kind of channel: enhancement Drain current: -0.8A Pulsed drain current: -5A Gate charge: 10.1nC On-state resistance: 0.15Ω Gate-source voltage: ±12V |
auf Bestellung 3011 Stücke: Lieferzeit 14-21 Tag (e) |
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| BB-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Components: FT232BL; NCS36510 Type of development kit: evaluation Connection: pin strips; Pmod socket x2; power supply; USB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC012N03 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDB035AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK Mounting: SMD Power dissipation: 310W Gate charge: 124nC Polarisation: unipolar Technology: PowerTrench® Drain current: 80A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 7.1mΩ |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78LC33NTRG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 53mV Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
auf Bestellung 2906 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78LC50NTRG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Tolerance: ±2.5% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: MC78LC00 Input voltage: 6...12V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 38mV Operating temperature: -40...85°C Output voltage: 5V Kind of package: reel; tape Case: TSOP5 Number of channels: 1 |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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| FAN53601UC182X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN53611AUC18X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FGY40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 441W Case: TO247H03 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FGHL40T120RWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 174nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FGY140T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| FGH4L40T120LQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| AFGHL40T120RWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 170nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| NSPM5131MUTBG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 16.5V; uDFN6; reel,tape Case: uDFN6 Mounting: SMD Breakdown voltage: 16.5V Max. off-state voltage: 13.5V Kind of package: reel; tape Type of diode: TVS |
Produkt ist nicht verfügbar |
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2N6284G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 160W Case: TO3 Mounting: THT Current gain: 100...18000 Kind of package: in-tray Collector current: 20A Collector-emitter voltage: 100V Kind of transistor: Darlington |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6292G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz Collector current: 7A Collector-emitter voltage: 80V |
Produkt ist nicht verfügbar |
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NDT2955 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Drain current: -2.5A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.3Ω Power dissipation: 3W Polarisation: unipolar |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 On-state resistance: 0.185Ω Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Drain current: -2A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 On-state resistance: 154mΩ Mounting: SMD Power dissipation: 2.3W Gate charge: 14.3nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD2955G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: tube Frequency: 2MHz |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE2955TG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 125W Case: TO220AB Current gain: 20...100 Mounting: THT Kind of package: tube Frequency: 2MHz |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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SVD2955T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Mounting: SMD Pulsed drain current: -18A Power dissipation: 55W Gate charge: 15nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 0.18Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FOD3184 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Turn-on time: 38ns
Output voltage: 0...35V
Turn-off time: 24ns
Slew rate: 50kV/μs
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Turn-on time: 38ns
Output voltage: 0...35V
Turn-off time: 24ns
Slew rate: 50kV/μs
Kind of output: transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD3184S |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3184SD |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.15 EUR |
| FOD3184SDV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.12 EUR |
| MC74VHCT125ADR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Technology: CMOS
Quiescent current: 40µA
Number of channels: 4
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Technology: CMOS
Quiescent current: 40µA
Number of channels: 4
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2575D2T-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.64 EUR |
| 39+ | 2.23 EUR |
| 42+ | 2.05 EUR |
| 45+ | 1.93 EUR |
| NE521DR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Mounting: SMT
Delay time: 8.2ns
Input offset voltage: 7.5mV
Type of integrated circuit: comparator
Operating temperature: 0...70°C
Number of comparators: 2
Input bias current: 7.5µA
Kind of package: reel; tape
Input offset current: 1µA
Case: SO14
Operating voltage: 4.75...5.25/-4.75...-5.25V
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Mounting: SMT
Delay time: 8.2ns
Input offset voltage: 7.5mV
Type of integrated circuit: comparator
Operating temperature: 0...70°C
Number of comparators: 2
Input bias current: 7.5µA
Kind of package: reel; tape
Input offset current: 1µA
Case: SO14
Operating voltage: 4.75...5.25/-4.75...-5.25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU4K |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TL431BIDR2G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS360T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
auf Bestellung 11503 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 228+ | 0.37 EUR |
| 265+ | 0.32 EUR |
| 332+ | 0.26 EUR |
| 343+ | 0.25 EUR |
| 2500+ | 0.23 EUR |
| MC74HC4040ADTR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC4040ADR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV2904DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; SO8; 13mV; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; SO8; 13mV; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV2904DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; Micro8; 13mV; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 3...32V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; Micro8; 13mV; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 3...32V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ2955G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.18 EUR |
| 18+ | 4.78 EUR |
| 25+ | 4.34 EUR |
| 100+ | 4.28 EUR |
| BSR16 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 300MHz
Collector current: 0.8A
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 300MHz
Collector current: 0.8A
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 3287 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 0.61 EUR |
| 211+ | 0.4 EUR |
| 321+ | 0.26 EUR |
| 379+ | 0.23 EUR |
| 521+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.13 EUR |
| BZX84C3V6LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
auf Bestellung 3065 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 695+ | 0.12 EUR |
| 820+ | 0.1 EUR |
| 1316+ | 0.064 EUR |
| 1598+ | 0.054 EUR |
| 1969+ | 0.043 EUR |
| 2223+ | 0.038 EUR |
| 2591+ | 0.033 EUR |
| 3013+ | 0.029 EUR |
| 1N5361BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: bulk
Case: CASE017AA
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 148+ | 0.58 EUR |
| 205+ | 0.42 EUR |
| 231+ | 0.37 EUR |
| 283+ | 0.3 EUR |
| 307+ | 0.27 EUR |
| 1N5361BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Produkt ist nicht verfügbar
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| NVMYS016N10MCLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVMFS016N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS016N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 243A
Power dissipation: 32W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 243A
Power dissipation: 32W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC14051BDR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: SP8T
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: SP8T
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| NIV1161MTTAG |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NIV2161MTTAG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NIS1161MTTAG |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCP5106BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| FGHL40T120SWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 234W
Gate charge: 118nC
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 234W
Gate charge: 118nC
Type of transistor: IGBT
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.21 EUR |
| 19+ | 4.71 EUR |
| M74HCT4852ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT4851ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT4852ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT02DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Technology: TTL
Case: SOIC14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Family: ACT
Manufacturer series: ACT
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Technology: TTL
Case: SOIC14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Family: ACT
Manufacturer series: ACT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| BC848CLT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DTC143ZET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
auf Bestellung 8950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.17 EUR |
| 685+ | 0.12 EUR |
| 985+ | 0.087 EUR |
| 1153+ | 0.074 EUR |
| 1598+ | 0.054 EUR |
| 1819+ | 0.046 EUR |
| 3000+ | 0.037 EUR |
| 1N5400RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape
Mounting: THT
Max. forward impulse current: 200A
Max. off-state voltage: 50V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO201AD
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape
Mounting: THT
Max. forward impulse current: 200A
Max. off-state voltage: 50V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO201AD
Type of diode: rectifying
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 455+ | 0.19 EUR |
| 472+ | 0.18 EUR |
| 1N5400G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1624T-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1624S-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTS4173PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 0.29W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -0.8A
Pulsed drain current: -5A
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 0.29W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -0.8A
Pulsed drain current: -5A
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Gate-source voltage: ±12V
auf Bestellung 3011 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 295+ | 0.29 EUR |
| 391+ | 0.21 EUR |
| 459+ | 0.19 EUR |
| 506+ | 0.17 EUR |
| 562+ | 0.15 EUR |
| 625+ | 0.13 EUR |
| 685+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.1 EUR |
| BB-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Type of development kit: evaluation
Connection: pin strips; Pmod socket x2; power supply; USB
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Type of development kit: evaluation
Connection: pin strips; Pmod socket x2; power supply; USB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC012N03 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB035AN06A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Power dissipation: 310W
Gate charge: 124nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 7.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Power dissipation: 310W
Gate charge: 124nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 7.1mΩ
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.62 EUR |
| 16+ | 5.51 EUR |
| MC78LC33NTRG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| MC78LC50NTRG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Tolerance: ±2.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Input voltage: 6...12V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 38mV
Operating temperature: -40...85°C
Output voltage: 5V
Kind of package: reel; tape
Case: TSOP5
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Tolerance: ±2.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Input voltage: 6...12V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 38mV
Operating temperature: -40...85°C
Output voltage: 5V
Kind of package: reel; tape
Case: TSOP5
Number of channels: 1
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 348+ | 0.25 EUR |
| 397+ | 0.21 EUR |
| 477+ | 0.18 EUR |
| 596+ | 0.14 EUR |
| 667+ | 0.13 EUR |
| 705+ | 0.12 EUR |
| FAN53601UC182X |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN53611AUC18X |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY40T120SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGHL40T120RWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY140T120SWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH4L40T120LQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL40T120RWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSPM5131MUTBG |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6284G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Current gain: 100...18000
Kind of package: in-tray
Collector current: 20A
Collector-emitter voltage: 100V
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Current gain: 100...18000
Kind of package: in-tray
Collector current: 20A
Collector-emitter voltage: 100V
Kind of transistor: Darlington
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 7.96 EUR |
| 16+ | 5.38 EUR |
| 100+ | 5.33 EUR |
| 2N6292G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDT2955 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Power dissipation: 3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Power dissipation: 3W
Polarisation: unipolar
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 62+ | 1.38 EUR |
| 76+ | 1.12 EUR |
| 89+ | 0.96 EUR |
| 133+ | 0.64 EUR |
| 156+ | 0.55 EUR |
| 250+ | 0.45 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| 2000+ | 0.35 EUR |
| NTF2955T1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
On-state resistance: 0.185Ω
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
On-state resistance: 0.185Ω
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.13 EUR |
| 44+ | 1.98 EUR |
| 57+ | 1.51 EUR |
| 65+ | 1.32 EUR |
| 78+ | 1.11 EUR |
| 100+ | 0.96 EUR |
| 200+ | 0.86 EUR |
| NVF2955T1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
On-state resistance: 154mΩ
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
On-state resistance: 154mΩ
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 68+ | 1.26 EUR |
| 82+ | 1.04 EUR |
| MJD2955G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.05 EUR |
| MJE2955TG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.87 EUR |
| 93+ | 0.92 EUR |
| 107+ | 0.8 EUR |
| SVD2955T4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH