Foto | Bezeichnung | Hersteller | Beschreibung |
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FCMT099N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 227W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCPF099N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTZD5110NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.225A Power dissipation: 0.28W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BYW80-200G | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. load current: 16A Heatsink thickness: 1.15...1.39mm |
auf Bestellung 1366 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1336BDR2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC Mounting: SMD Case: SO14 Type of integrated circuit: PMIC Operating temperature: -40...125°C Output current: -500...800mA Number of channels: 1 Operating voltage: 9...28V DC Kind of integrated circuit: AC/DC switcher; PWM controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NCP1338DR2G | ONSEMI |
![]() ![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC Mounting: SMD Case: SO7 Type of integrated circuit: PMIC Operating temperature: 0...125°C Output current: 0.5A Number of channels: 1 Operating voltage: 9...18.6V DC Frequency: 130kHz Kind of integrated circuit: AC/DC switcher; PWM controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MJE15029G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB Type of transistor: PNP Mounting: THT Collector current: 8A Collector-emitter voltage: 120V Power dissipation: 50W Frequency: 30MHz Polarisation: bipolar Kind of package: tube Case: TO220AB |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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LMV931SN3T1G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.5MHz Mounting: SMT Case: TSOP5 Slew rate: 480mV/μs Operating temperature: -40...125°C Input offset voltage: 6mV Voltage supply range: 1.8...5V DC Kind of package: reel; tape Input bias current: 1nA Input offset current: 1nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
LMV931SQ3T2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.5MHz Mounting: SMT Case: SC70-5 Slew rate: 480mV/μs Operating temperature: -40...125°C Input offset voltage: 6mV Voltage supply range: 1.8...5V DC Kind of package: reel; tape Input bias current: 1nA Input offset current: 1nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP163ASN330T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.175V Output voltage: 3.3V Output current: 0.25A Case: SOT23-5 Mounting: SMD Manufacturer series: NCP163 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.2...5.5V |
auf Bestellung 1349 Stücke: Lieferzeit 14-21 Tag (e) |
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NB3M8302CDR2G | ONSEMI |
![]() Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA Type of integrated circuit: digital Mounting: SMD Case: SO8 Quiescent current: 13mA Operating temperature: -40...85°C Kind of package: reel; tape Number of channels: 1 Supply voltage: 4.6V DC Technology: CMOS; TTL Kind of integrated circuit: fanout buffer |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NB3M8302CDG | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ4680T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 4µA Manufacturer series: MMSZ4xxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NTLJF3117PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Pulsed drain current: -20A Power dissipation: 2.3W Case: WDFN6 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTMT064N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 112A Power dissipation: 260W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Case: SC70; SOT323 Mounting: SMD Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Current gain: 60 Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Case: SC70; SOT323 Mounting: SMD Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5211DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.187W Current gain: 60 Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5211DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5211T3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Case: SC70; SOT323 Mounting: SMD Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NSVMUN5211DW1T2G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.385W Current gain: 35...60 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MELSMUN5211T3G | ONSEMI |
Category: Unclassified Description: MELSMUN5211T3G |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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VEOSMUN5211T1G | ONSEMI |
Category: Unclassified Description: VEOSMUN5211T1G |
auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LVX573DTG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LVX Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Family: LVX Integrated circuit features: tolerates a voltage of 5V on the inputs |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LVX573DTR2G | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LVX Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LVX Integrated circuit features: tolerates a voltage of 5V on the inputs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP431BISNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP432BISNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MJ11033G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3 Kind of package: in-tray Polarisation: bipolar Kind of transistor: Darlington Case: TO3 Mounting: THT Type of transistor: PNP Power dissipation: 300W Collector current: 50A Collector-emitter voltage: 120V |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5940BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxBT3G Case: SMB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SZ1SMB5940BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxBT3G Application: automotive industry Case: SMB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP1397ADR2G | ONSEMI |
![]() Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16 Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Output current: -1...0.5A Frequency: 0.5MHz Number of channels: 1 Case: SO16 Mounting: SMD Topology: push-pull; resonant LLC Kind of package: reel; tape Operating voltage: 9...20V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUN5235T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Case: SC70; SOT323 Mounting: SMD Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Current gain: 140 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74AC04MTCX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
74AC04SCX | ONSEMI |
![]() Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC Number of inputs: 1 Kind of integrated circuit: hex; inverter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1SMA5932BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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SZ1SMA5932BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
LP2951CD-3.0R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCV2951ACD3.3R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCV2951ACDR2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A; SO8 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...29V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SZBZX84B6V8LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Case: SOT23 Leakage current: 2µA Application: automotive industry Kind of package: reel; tape Manufacturer series: BZX84B Power dissipation: 0.3W Tolerance: ±2% Zener voltage: 6.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDPC8011S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 19/64nC On-state resistance: 6/1.8mΩ Power dissipation: 1.6/2W Drain current: 20/60A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDPC8012S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 8/25nC On-state resistance: 7/2.2mΩ Power dissipation: 1.6/2W Drain current: 35/88A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDPC8013S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 13/44nC On-state resistance: 6.4/1.9mΩ Power dissipation: 1.6/2W Gate-source voltage: ±20V Drain current: 20/55A Drain-source voltage: 30V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDPC8016S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 25/67nC On-state resistance: 3.8/1.4mΩ Power dissipation: 21/42W Gate-source voltage: ±12V Drain current: 60/100A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDD13AN06A0-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 115W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDMC008N08C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 38A Pulsed drain current: 273A Power dissipation: 57W Case: Power33 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FPDB40PH60B | ONSEMI |
![]() Description: FPDB40PH60B |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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DFB20100 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A Case: TS-6P Max. off-state voltage: 1kV Load current: 20A Kind of package: tube Leads: flat pin Electrical mounting: THT Max. forward voltage: 1.1V Version: flat Type of bridge rectifier: single-phase Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NRVBB20100CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry Max. forward voltage: 0.95V Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ESD7M5.0DT5G | ONSEMI |
![]() Description: Diode: TVS array; 5.4V; double,common anode; SOT723; reel,tape Mounting: SMD Case: SOT723 Kind of package: reel; tape Type of diode: TVS array Semiconductor structure: common anode; double Max. off-state voltage: 5V Breakdown voltage: 5.4V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MOC8204SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 20%@10mA Mounting: SMD Case: Gull wing 6 Type of optocoupler: optocoupler Kind of output: transistor Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 CTR@If: 20%@10mA Insulation voltage: 4.17kV |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVBB41H100CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Max. load current: 20A Max. forward impulse current: 350A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MC33179DTBR2G | ONSEMI |
![]() Description: IC: operational amplifier; 5MHz; TSSOP14; ±2÷18VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 5MHz Mounting: SMT Case: TSSOP14 Slew rate: 2V/μs Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: ± 2...18V DC Kind of package: reel; tape Input bias current: 600nA Input offset current: 60nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SZ1SMB5936BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FAN7385MX | ONSEMI |
![]() Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SOP14 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Protection: undervoltage UVP Output current: -650...350mA Pulse fall time: 70ns Impulse rise time: 90ns Voltage class: 600V Technology: MillerDrive™ Number of channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74VHCT08ADR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: VHCT Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74VHCT08ADTR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: VHCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NTMFS5C410NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NSR0620P2T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky switching Case: SOD923 Load current: 0.5A Max. forward voltage: 0.52V Max. forward impulse current: 1A Max. off-state voltage: 20V |
auf Bestellung 2785 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR0230M2T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Kind of package: reel; tape Case: SOD723 Semiconductor structure: single diode Load current: 0.2A Max. forward voltage: 0.5V Max. forward impulse current: 1A Max. off-state voltage: 30V |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCMT099N65S3 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCPF099N65S3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTZD5110NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BYW80-200G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
auf Bestellung 1366 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
79+ | 0.92 EUR |
84+ | 0.86 EUR |
88+ | 0.82 EUR |
NCP1336BDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1338DR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJE15029G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Mounting: THT
Collector current: 8A
Collector-emitter voltage: 120V
Power dissipation: 50W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Mounting: THT
Collector current: 8A
Collector-emitter voltage: 120V
Power dissipation: 50W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.03 EUR |
28+ | 2.56 EUR |
36+ | 2 EUR |
44+ | 1.63 EUR |
LMV931SN3T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LMV931SQ3T2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP163ASN330T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
auf Bestellung 1349 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
174+ | 0.41 EUR |
196+ | 0.37 EUR |
228+ | 0.31 EUR |
281+ | 0.25 EUR |
298+ | 0.24 EUR |
NB3M8302CDR2G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NB3M8302CDG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
98+ | 2.67 EUR |
196+ | 2.4 EUR |
SZMMSZ4680T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTLJF3117PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMT064N65S3H |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5211T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
544+ | 0.13 EUR |
SMUN5211T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
MUN5211DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Current gain: 60
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Current gain: 60
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMUN5211DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMUN5211T3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
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NSVMUN5211DW1T2G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 35...60
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 35...60
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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MELSMUN5211T3G |
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.044 EUR |
VEOSMUN5211T1G |
auf Bestellung 81000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.02 EUR |
MC74LVX573DTG |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
75+ | 0.96 EUR |
106+ | 0.68 EUR |
112+ | 0.64 EUR |
150+ | 0.62 EUR |
MC74LVX573DTR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
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NCP431BISNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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NCP432BISNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MJ11033G | ![]() |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: PNP
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 120V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: PNP
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 120V
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.18 EUR |
10+ | 11.7 EUR |
1SMB5940BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Case: SMB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Case: SMB
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SZ1SMB5940BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Case: SMB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Case: SMB
Produkt ist nicht verfügbar
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NCP1397ADR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
Produkt ist nicht verfügbar
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MUN5235T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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74AC04MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
Produkt ist nicht verfügbar
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74AC04SCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
Produkt ist nicht verfügbar
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1SMA5932BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
206+ | 0.35 EUR |
274+ | 0.26 EUR |
315+ | 0.23 EUR |
481+ | 0.15 EUR |
506+ | 0.14 EUR |
SZ1SMA5932BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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LP2951CD-3.0R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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NCV2951ACD3.3R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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NCV2951ACDR2G |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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SZBZX84B6V8LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Leakage current: 2µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: BZX84B
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Leakage current: 2µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: BZX84B
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
Produkt ist nicht verfügbar
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FDPC8011S |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDPC8012S |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDPC8013S |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDPC8016S |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDD13AN06A0-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC008N08C |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FPDB40PH60B |
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auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 22.12 EUR |
30+ | 19.91 EUR |
DFB20100 |
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Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Max. forward voltage: 1.1V
Version: flat
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Max. forward voltage: 1.1V
Version: flat
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
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NRVBB20100CTT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Max. forward voltage: 0.95V
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Max. forward voltage: 0.95V
Max. load current: 20A
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ESD7M5.0DT5G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.4V; double,common anode; SOT723; reel,tape
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: common anode; double
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.4V; double,common anode; SOT723; reel,tape
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: common anode; double
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
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MOC8204SM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 20%@10mA
Mounting: SMD
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
CTR@If: 20%@10mA
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 20%@10mA
Mounting: SMD
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
CTR@If: 20%@10mA
Insulation voltage: 4.17kV
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.76 EUR |
NRVBB41H100CTT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
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MC33179DTBR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; TSSOP14; ±2÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; TSSOP14; ±2÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Number of channels: quad
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SZ1SMB5936BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FAN7385MX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SOP14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -650...350mA
Pulse fall time: 70ns
Impulse rise time: 90ns
Voltage class: 600V
Technology: MillerDrive™
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SOP14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -650...350mA
Pulse fall time: 70ns
Impulse rise time: 90ns
Voltage class: 600V
Technology: MillerDrive™
Number of channels: 2
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MC74VHCT08ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 40µA
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MC74VHCT08ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
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NTMFS5C410NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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NSR0620P2T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
Load current: 0.5A
Max. forward voltage: 0.52V
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
Load current: 0.5A
Max. forward voltage: 0.52V
Max. forward impulse current: 1A
Max. off-state voltage: 20V
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
443+ | 0.16 EUR |
589+ | 0.12 EUR |
667+ | 0.11 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
747+ | 0.096 EUR |
NSR0230M2T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Kind of package: reel; tape
Case: SOD723
Semiconductor structure: single diode
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Kind of package: reel; tape
Case: SOD723
Semiconductor structure: single diode
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
376+ | 0.19 EUR |
560+ | 0.13 EUR |
642+ | 0.11 EUR |
1306+ | 0.055 EUR |
1382+ | 0.052 EUR |
8000+ | 0.05 EUR |