FDD8445

Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
On-state resistance: 16.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 79W
Drain current: 70A
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC

Hersteller: onsemi / Fairchild
MOSFETs LOW VOLTAGE

Hersteller: onsemi
Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)

Hersteller: ON-Semiconductor
N-Channel 40V 70A (Tc) 79W (Tc) Surface Mount TO-252AA FDD8445 ON Semiconductor TFDD8445
Anzahl je Verpackung: 10 Stücke

Hersteller: onsemi
Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)