NCP5181DR2G onsemi
Hersteller: onsemiDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 1.4A, 2.2A
DigiKey Programmable: Not Verified
auf Bestellung 7100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.65 EUR |
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Technische Details NCP5181DR2G onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 40ns, 20ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 1.4A, 2.2A, DigiKey Programmable: Not Verified.
Weitere Produktangebote NCP5181DR2G nach Preis ab 1.56 EUR bis 5.49 EUR
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NCP5181DR2G | Hersteller : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Number of channels: 2 Mounting: SMD Supply voltage: 10...20V DC Kind of package: reel; tape Protection: undervoltage UVP Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Voltage class: 600V Impulse rise time: 60ns Pulse fall time: 40ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1789 Stücke: Lieferzeit 7-14 Tag (e) |
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NCP5181DR2G | Hersteller : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Number of channels: 2 Mounting: SMD Supply voltage: 10...20V DC Kind of package: reel; tape Protection: undervoltage UVP Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Voltage class: 600V Impulse rise time: 60ns Pulse fall time: 40ns |
auf Bestellung 1789 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5181DR2G | Hersteller : ON Semiconductor |
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R |
auf Bestellung 316 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5181DR2G | Hersteller : ON Semiconductor |
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R |
auf Bestellung 54948 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5181DR2G | Hersteller : onsemi |
Gate Drivers HV MOSFET DRIVER |
auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP5181DR2G | Hersteller : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 1.4A, 2.2A DigiKey Programmable: Not Verified |
auf Bestellung 7471 Stücke: Lieferzeit 10-14 Tag (e) |
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