NCP5181DR2G onsemi
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 1.4A, 2.2A
DigiKey Programmable: Not Verified
| Anzahl | Preis |
|---|---|
| 2500+ | 1.65 EUR |
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Technische Details NCP5181DR2G onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 40ns, 20ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 1.4A, 2.2A, DigiKey Programmable: Not Verified.
Weitere Produktangebote NCP5181DR2G nach Preis ab 1.54 EUR bis 5.49 EUR
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NCP5181DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 60ns Pulse fall time: 40ns Supply voltage: 10...20V DC Voltage class: 600V Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape Protection: undervoltage UVP |
auf Bestellung 1710 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5181DR2G | onsemi |
Gate Drivers HV MOSFET DRIVER |
auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP5181DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOICOperating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.4A, 2.2A Logic Voltage - VIL, VIH: 0.8V, 2.3V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V |
auf Bestellung 7471 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCP5181DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
auf Bestellung 1710 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 43+ | 1.7 EUR |
| 44+ | 1.63 EUR |
| 100+ | 1.54 EUR |
| NCP5181DR2G |
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Hersteller: onsemi
Gate Drivers HV MOSFET DRIVER
Gate Drivers HV MOSFET DRIVER
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 3.91 EUR |
| 25+ | 3.68 EUR |
| 100+ | 3.13 EUR |
| NCP5181DR2G |
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Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.4A, 2.2A
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.4A, 2.2A
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
auf Bestellung 7471 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.5 EUR |
| 25+ | 2.98 EUR |
| 100+ | 2.39 EUR |
| 250+ | 2.1 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.77 EUR |


