FDD8444 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 310+ | 1.78 EUR |
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Technische Details FDD8444 Fairchild Semiconductor
Description: MOSFET N-CH 40V 145A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V, Power Dissipation (Max): 153W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V.
Weitere Produktangebote FDD8444 nach Preis ab 1.74 EUR bis 4.51 EUR
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FDD8444 | Hersteller : onsemi / Fairchild |
MOSFETs LOW VOLTAGE |
auf Bestellung 2647 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8444 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 145A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V |
auf Bestellung 902 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8444 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 145A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8444 Produktcode: 163329
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FDD8444 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 145A 3-Pin(2+Tab) DPAK T/R |
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FDD8444 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 145A 3-Pin(2+Tab) DPAK T/R |
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FDD8444 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 145A 3-Pin(2+Tab) DPAK T/R |
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FDD8444 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 145A Automotive 3-Pin(2+Tab) DPAK T/R |
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| FDD8444 | Hersteller : ONSEMI |
FDD8444 SMD N channel transistors |
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FDD8444 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 145A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V |
Produkt ist nicht verfügbar |