BYW80-200G onsemi
Hersteller: onsemiDescription: DIODE GEN PURP 200V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 22 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.95 EUR |
| 50+ | 1.58 EUR |
| 100+ | 1.25 EUR |
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Technische Details BYW80-200G onsemi
Description: DIODE GEN PURP 200V 8A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 22 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote BYW80-200G nach Preis ab 0.82 EUR bis 2.89 EUR
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BYW80-200G | Hersteller : ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220-2 Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220-2 Heatsink thickness: 1.15...1.39mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 326 Stücke: Lieferzeit 7-14 Tag (e) |
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BYW80-200G | Hersteller : ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220-2 Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220-2 Heatsink thickness: 1.15...1.39mm |
auf Bestellung 326 Stücke: Lieferzeit 14-21 Tag (e) |
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BYW80-200G Produktcode: 101730 |
Verschiedene Bauteile > Other components 3 |
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BYW80-200G | Hersteller : ON Semiconductor |
Rectifier Diode Switching 200V 8A 35ns 2-Pin(2+Tab) TO-220AC Tube |
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BYW80-200G | Hersteller : ON Semiconductor |
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