| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTBG020N090SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| NTBG020N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 0.22µC On-state resistance: 50mΩ Power dissipation: 3.7W Drain current: 8.6A Pulsed drain current: 392A Drain-source voltage: 1.2kV Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTBG022N120M3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 142nC On-state resistance: 44mΩ Power dissipation: 220W Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVBG020N090SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVBG022N120M3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -3...18V Gate charge: 142nC On-state resistance: 44mΩ Power dissipation: 220W Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1N5362BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB Semiconductor structure: single diode Mounting: THT Type of diode: Zener Power dissipation: 5W Tolerance: ±5% Manufacturer series: 1N53xxB Zener voltage: 28V Kind of package: bulk Case: CASE017AA |
auf Bestellung 652 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5368BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB Semiconductor structure: single diode Mounting: THT Type of diode: Zener Power dissipation: 5W Tolerance: ±5% Manufacturer series: 1N53xxB Zener voltage: 47V Kind of package: bulk Case: CASE017AA |
auf Bestellung 558 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5250B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB Case: CASE017AG Mounting: THT Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 20V Manufacturer series: 1N52xxB Kind of package: bulk |
auf Bestellung 4784 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC10ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 3 Number of inputs: 3 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Delay time: 16ns Quiescent current: 1µA Number of outputs: 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC14070BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 150ns Family: HEF4000B |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS6H848NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Pulsed drain current: 319A Power dissipation: 37W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS6H848NLWFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Pulsed drain current: 319A Power dissipation: 37W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ESD5Z5.0T5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 50nA Number of channels: 1 Capacitance: 80pF Max. forward impulse current: 9.4A Peak pulse power dissipation: 0.174kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZESD5Z5.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1N4937RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
auf Bestellung 2029 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4937G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
auf Bestellung 588 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC4052DR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: VHC Family: VHC Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74VHC4052DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Family: VHC Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDWS86368-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Power dissipation: 214W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74VHC74MTCX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Trigger: positive-edge-triggered |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC74MX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74VHC74DR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: SO14 Operating temperature: -55...125°C Supply voltage: 2.2...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74VHC74DTG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 2.2...5.5V DC Kind of package: tube Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74VHC74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 2.2...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
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| FQB44N10TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30.8A Power dissipation: 146W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MBRS260T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.55V Kind of package: reel; tape |
auf Bestellung 4285 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75344G3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC86MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Case: TSSOP14 Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of gate: XOR Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Family: VHC Supply voltage: 2...5.5V DC |
Produkt ist nicht verfügbar |
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74VHC86MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC Type of integrated circuit: digital Case: SO14 Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of gate: XOR Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Family: VHC Supply voltage: 2...5.5V DC |
Produkt ist nicht verfügbar |
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| MC74VHC86DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Case: SOIC14 Manufacturer series: VHC Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of gate: XOR Operating temperature: -55...125°C Number of inputs: 2 Family: VHC Supply voltage: 2...5.5V DC Technology: CMOS |
Produkt ist nicht verfügbar |
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MC74VHC86DTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Case: TSSOP14 Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of gate: XOR Operating temperature: -55...125°C Quiescent current: 20µA Number of inputs: 2 Family: VHC Supply voltage: 2...5.5V DC Technology: CMOS |
Produkt ist nicht verfügbar |
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MC74ACT86DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
Produkt ist nicht verfügbar |
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| MC74ACT86DTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC; ACT Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Manufacturer series: ACT |
Produkt ist nicht verfügbar |
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| NVLJWD040N06CLTAG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6 Case: WDFNW6 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 6nC On-state resistance: 38mΩ Drain current: 18A Power dissipation: 12W Gate-source voltage: ±20V Pulsed drain current: 54A Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SBAV70LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| NCP1612A3DR2G | ONSEMI |
Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷35VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: SO10 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Output current: -500...800mA Operating voltage: 9...35V DC Topology: boost |
Produkt ist nicht verfügbar |
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| FNB34060T | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVBG040N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MOC3042M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Slew rate: 1kV/μs Manufacturer series: MOC304XM Number of channels: 1 |
auf Bestellung 1585 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3042TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC304XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
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| MOC3042SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Kind of package: tube Output voltage: 400V |
Produkt ist nicht verfügbar |
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| MOC3042SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Kind of package: reel; tape Output voltage: 400V |
Produkt ist nicht verfügbar |
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| MOC3042SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Kind of package: reel; tape Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3042SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3042VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC304XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC3303DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14 Case: SO14 Mounting: SMT Number of channels: quad; 4 Kind of package: reel; tape Operating temperature: -40...85°C Input offset current: 250nA Input offset voltage: 10mV Slew rate: 0.6V/μs Voltage supply range: ± 1.5...18V DC; 3...36V DC Bandwidth: 1MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
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| MUR260RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 2A; reel,tape; Ifsm: 35A; DO41; 75ns Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 75ns Load current: 2A Max. forward impulse current: 35A Max. off-state voltage: 0.6kV Kind of package: reel; tape Case: DO41 |
Produkt ist nicht verfügbar |
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NCP380HSN05AAT1G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 445mΩ Drain current: 0.46A Gate charge: 1.3nC Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 4344 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6898A | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel; tape On-state resistance: 21mΩ Drain current: 9.4A Gate charge: 23nC Gate-source voltage: ±12V Technology: PowerTrench® Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 1886 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6305N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.96W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 128mΩ Drain current: 2.7A Gate charge: 5nC Gate-source voltage: ±8V Technology: PowerTrench® Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Kind of package: reel; tape Leakage current: 50nA Max. forward impulse current: 1.4A Number of channels: 2 Tolerance: ±5% Type of diode: TVS array Max. off-state voltage: 17V Breakdown voltage: 20V Version: ESD Peak pulse power dissipation: 40W Semiconductor structure: common anode; double |
auf Bestellung 1378 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N20FT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP Case: TO220FP Mounting: THT On-state resistance: 0.14Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 41W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 20nC |
auf Bestellung 587 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDD18N20LZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3 Case: DPAK3 Mounting: SMD On-state resistance: 0.125Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 89W Pulsed drain current: 64A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 30nC |
Produkt ist nicht verfügbar |
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|
1N4937 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NL17SZ125DFT2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; SC88A Operating temperature: -55...125°C Type of integrated circuit: digital Mounting: SMD Case: SC88A Number of channels: 1 Supply voltage: 1.65...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting Technology: CMOS; TTL |
auf Bestellung 2720 Stücke: Lieferzeit 14-21 Tag (e) |
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NL27WZ125USG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Mounting: SMD Case: US8 Number of channels: 2 Supply voltage: 1.65...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7SZ125M5X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT23-5; -40÷85°C Operating temperature: -40...85°C Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: SOT23-5 Quiescent current: 20µA Number of channels: 1 Supply voltage: 1.65...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NC7SZ125P5X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; -40÷85°C Operating temperature: -40...85°C Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: SC70-5 Quiescent current: 20µA Number of channels: 1 Supply voltage: 1.65...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NC7WZ125K8X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; VSOP8; -40÷85°C Operating temperature: -40...85°C Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: VSOP8 Quiescent current: 10µA Number of channels: 2 Supply voltage: 1.65...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTBG020N090SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG020N120SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG022N120M3S |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG020N090SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG022N120M3S |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5362BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
auf Bestellung 652 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 281+ | 0.25 EUR |
| 304+ | 0.24 EUR |
| 336+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 1N5368BG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 232+ | 0.31 EUR |
| 258+ | 0.28 EUR |
| 327+ | 0.22 EUR |
| 1N5250B |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
Kind of package: bulk
auf Bestellung 4784 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1163+ | 0.061 EUR |
| 1563+ | 0.046 EUR |
| 2416+ | 0.03 EUR |
| 3247+ | 0.022 EUR |
| MC74HC10ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Delay time: 16ns
Quiescent current: 1µA
Number of outputs: 3
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Delay time: 16ns
Quiescent current: 1µA
Number of outputs: 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14070BDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| NVMFS6H848NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H848NLWFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD5Z5.0T5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Capacitance: 80pF
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 0.174kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Capacitance: 80pF
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 0.174kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD5Z5.0T1G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4937RLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 642+ | 0.11 EUR |
| 754+ | 0.095 EUR |
| 983+ | 0.073 EUR |
| 1169+ | 0.061 EUR |
| 1316+ | 0.054 EUR |
| 1N4937G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 588 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 588+ | 0.12 EUR |
| MC74VHC4052DR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC4052DTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDWS86368-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC74MTCX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Trigger: positive-edge-triggered
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 236+ | 0.3 EUR |
| 264+ | 0.27 EUR |
| 302+ | 0.24 EUR |
| 317+ | 0.23 EUR |
| 74VHC74MX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC74DR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC74DTG |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC74DTR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB44N10TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS260T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.55V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.55V
Kind of package: reel; tape
auf Bestellung 4285 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 291+ | 0.25 EUR |
| 338+ | 0.21 EUR |
| 410+ | 0.17 EUR |
| 463+ | 0.15 EUR |
| 521+ | 0.14 EUR |
| 538+ | 0.13 EUR |
| HUF75344G3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.96 EUR |
| 16+ | 4.59 EUR |
| 19+ | 3.82 EUR |
| 23+ | 3.19 EUR |
| 74VHC86MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC86MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC86DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Case: SOIC14
Manufacturer series: VHC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -55...125°C
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Case: SOIC14
Manufacturer series: VHC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -55...125°C
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC86DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -55...125°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -55...125°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT86DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT86DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVLJWD040N06CLTAG |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 38mΩ
Drain current: 18A
Power dissipation: 12W
Gate-source voltage: ±20V
Pulsed drain current: 54A
Drain-source voltage: 60V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 38mΩ
Drain current: 18A
Power dissipation: 12W
Gate-source voltage: ±20V
Pulsed drain current: 54A
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBAV70LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1612A3DR2G |
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Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷35VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -500...800mA
Operating voltage: 9...35V DC
Topology: boost
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷35VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -500...800mA
Operating voltage: 9...35V DC
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FNB34060T |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG040N120SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
Number of channels: 1
auf Bestellung 1585 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 139+ | 0.52 EUR |
| 148+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| 162+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| MOC3042TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
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| MOC3042SM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Output voltage: 400V
Produkt ist nicht verfügbar
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| MOC3042SR2M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: reel; tape
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: reel; tape
Output voltage: 400V
Produkt ist nicht verfügbar
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| MOC3042SR2VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
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| MOC3042SVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
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| MOC3042VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
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| MC3303DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Case: SO14
Mounting: SMT
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
Input offset current: 250nA
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Case: SO14
Mounting: SMT
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
Input offset current: 250nA
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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| MUR260RLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; Ifsm: 35A; DO41; 75ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; Ifsm: 35A; DO41; 75ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: DO41
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCP380HSN05AAT1G |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 141+ | 0.51 EUR |
| 161+ | 0.45 EUR |
| 171+ | 0.42 EUR |
| NTJD4401NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 445mΩ
Drain current: 0.46A
Gate charge: 1.3nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 445mΩ
Drain current: 0.46A
Gate charge: 1.3nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 4344 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 191+ | 0.37 EUR |
| 234+ | 0.31 EUR |
| 491+ | 0.15 EUR |
| 3000+ | 0.13 EUR |
| FDS6898A |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Drain current: 9.4A
Gate charge: 23nC
Gate-source voltage: ±12V
Technology: PowerTrench®
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Drain current: 9.4A
Gate charge: 23nC
Gate-source voltage: ±12V
Technology: PowerTrench®
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 1886 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 69+ | 1.04 EUR |
| 75+ | 0.95 EUR |
| 93+ | 0.78 EUR |
| 101+ | 0.71 EUR |
| 500+ | 0.69 EUR |
| FDC6305N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 128mΩ
Drain current: 2.7A
Gate charge: 5nC
Gate-source voltage: ±8V
Technology: PowerTrench®
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 128mΩ
Drain current: 2.7A
Gate charge: 5nC
Gate-source voltage: ±8V
Technology: PowerTrench®
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 112+ | 0.64 EUR |
| 163+ | 0.44 EUR |
| 167+ | 0.43 EUR |
| MMBZ20VALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 1.4A
Number of channels: 2
Tolerance: ±5%
Type of diode: TVS array
Max. off-state voltage: 17V
Breakdown voltage: 20V
Version: ESD
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 1.4A
Number of channels: 2
Tolerance: ±5%
Type of diode: TVS array
Max. off-state voltage: 17V
Breakdown voltage: 20V
Version: ESD
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
auf Bestellung 1378 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 1087+ | 0.066 EUR |
| 1163+ | 0.061 EUR |
| 1378+ | 0.051 EUR |
| FDPF18N20FT |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 50+ | 1.46 EUR |
| 62+ | 1.16 EUR |
| 100+ | 1.1 EUR |
| 250+ | 1.09 EUR |
| FDD18N20LZ |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Produkt ist nicht verfügbar
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| 1N4937 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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| NL17SZ125DFT2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; SC88A
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SC88A
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; SC88A
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SC88A
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1000+ | 0.072 EUR |
| 1220+ | 0.059 EUR |
| 1525+ | 0.047 EUR |
| 2041+ | 0.035 EUR |
| 2184+ | 0.033 EUR |
| NL27WZ125USG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Case: US8
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Case: US8
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 443+ | 0.16 EUR |
| NC7SZ125M5X |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT23-5; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-5
Quiescent current: 20µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT23-5; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-5
Quiescent current: 20µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NC7SZ125P5X |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SC70-5
Quiescent current: 20µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SC70-5
Quiescent current: 20µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NC7WZ125K8X |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; VSOP8; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: VSOP8
Quiescent current: 10µA
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; VSOP8; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: VSOP8
Quiescent current: 10µA
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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