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NC7SZ04L6X ONSEMI NC7SZ04-D.PDF Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Quiescent current: 2µA
auf Bestellung 5000 Stücke:
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5000+0.08 EUR
Mindestbestellmenge: 5000
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MMSZ18T1G MMSZ18T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 5260 Stücke:
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625+0.11 EUR
910+0.079 EUR
1316+0.054 EUR
1558+0.046 EUR
1924+0.037 EUR
2137+0.033 EUR
Mindestbestellmenge: 625
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SZMMSZ18T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
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MMSZ5235BT1G MMSZ5235BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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SZMMSZ5235BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MPSA29-D26Z MPSA29-D26Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
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MPSA29 MPSA29 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
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NCP1032AMNTXG ONSEMI ncp1032-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Mounting: SMD
Topology: flyback
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 4.2Ω
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
Case: WDFN8
Kind of integrated circuit: AC/DC switcher; PWM controller
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MMBTH81 MMBTH81 ONSEMI mpsh81-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
auf Bestellung 1737 Stücke:
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358+0.2 EUR
455+0.16 EUR
516+0.14 EUR
618+0.12 EUR
705+0.1 EUR
782+0.092 EUR
863+0.083 EUR
910+0.079 EUR
1000+0.076 EUR
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NSVMMBTH81LT1G ONSEMI mmbth81-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FSQ0765RSUDTU FSQ0765RSUDTU ONSEMI fsq0765rs-d.pdf FAIRS29178-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Output voltage: 650V
Power: 70W
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Operating temperature: -25...85°C
Number of channels: 1
On-state resistance: 1.6Ω
Output current: 2.28A
Operating voltage: 8...19V DC
Input voltage: 85...265V
Frequency: 66.7kHz
auf Bestellung 318 Stücke:
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26+2.77 EUR
29+2.49 EUR
33+2.2 EUR
100+2.16 EUR
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FDP038AN06A0 FDP038AN06A0 ONSEMI fdp038an06a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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22+3.36 EUR
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BSS138 ONSEMI BSS138-FAI.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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HUFA75645S3S ONSEMI FAIRS45983-1.pdf?t.download=true&u=5oefqw hufa75645s3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
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FDP050AN06A0 FDP050AN06A0 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE912DD11E66259&compId=FDB050AN06A0.pdf?ci_sign=caf3e3d3b2a8e31c973cf4e8907f7b9cad073665 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
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FDP054N10 ONSEMI fdp054n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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FQP8N80C FQP8N80C ONSEMI FQPF8N80C-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 32A
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NRVB0530T1G NRVB0530T1G ONSEMI mbr0530t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
582+0.12 EUR
Mindestbestellmenge: 455
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NCP1253BSN65T1G ONSEMI ncp1253-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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MC34064D-5G ONSEMI mc34064-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
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NCP1253BSN100T1G ONSEMI ncp1253-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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BC818-40LT1G BC818-40LT1G ONSEMI bc818-40lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSVBC818-40LT1G ONSEMI bc818-40lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMBD701LT1G MMBD701LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869A00671C83C469&compId=MMBD701LT1G.PDF?ci_sign=d7dd5e26a70af96f33a28d1987476e0f2fc7ce83 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 2052 Stücke:
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295+0.24 EUR
610+0.12 EUR
715+0.1 EUR
810+0.088 EUR
925+0.077 EUR
1107+0.065 EUR
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MMBD7000LT1G MMBD7000LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BE26AEC4EB2469&compId=MMBD7000LT1G.PDF?ci_sign=bfb8c43a3ff6a4faf2948d9e7eb7b6cf1be95216 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 5490 Stücke:
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625+0.11 EUR
758+0.094 EUR
1117+0.064 EUR
1334+0.054 EUR
1684+0.042 EUR
1993+0.036 EUR
2337+0.031 EUR
3000+0.025 EUR
Mindestbestellmenge: 625
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MMBD1203 MMBD1203 ONSEMI MMBD1202-D.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
auf Bestellung 2870 Stücke:
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481+0.15 EUR
521+0.14 EUR
720+0.099 EUR
841+0.085 EUR
962+0.074 EUR
1122+0.064 EUR
Mindestbestellmenge: 385
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MMBD1205 MMBD1205 ONSEMI MMBD1202-D.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
auf Bestellung 2797 Stücke:
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358+0.2 EUR
459+0.16 EUR
645+0.11 EUR
755+0.095 EUR
1083+0.066 EUR
1257+0.057 EUR
Mindestbestellmenge: 358
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MMBD1201 MMBD1201 ONSEMI MMBD1202-D.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
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MMBD6050LT1G MMBD6050LT1G ONSEMI mmbd6050lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
auf Bestellung 2400 Stücke:
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625+0.11 EUR
1042+0.069 EUR
1553+0.046 EUR
1825+0.039 EUR
2400+0.03 EUR
Mindestbestellmenge: 625
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MMBD452LT1G ONSEMI mmbd452lt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
auf Bestellung 8990 Stücke:
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358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
550+0.13 EUR
667+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 358
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MMBD6100LT1G MMBD6100LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BE24AF7F784469&compId=MMBD6100LT1G.PDF?ci_sign=e641584af28f0bdf962d648b3d3f6fa44bc18757 Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
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MMBD1504A MMBD1504A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDF8B87534A745&compId=MMBD1501A.pdf?ci_sign=d99323952496222ff3c44c2dafec44384b225081 Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.15V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
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MMBD4148 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDFC1EA3DE4745&compId=MMBD4148.pdf?ci_sign=678a4b0ec83976d1c367c3d46bde72e8144308c5 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MCH4020-TL-H ONSEMI ena1280-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
Produkt ist nicht verfügbar
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FDP047AN08A0 FDP047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.15 EUR
23+3.15 EUR
50+2.57 EUR
Mindestbestellmenge: 18
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6N139M 6N139M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FB98EEB44C1C9E4&compId=6N139.pdf?ci_sign=6516884db1f1a450a7424a76c4cb26ca64a478d6 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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6N139SDM 6N139SDM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD6DAB0E4D58749&compId=6N139SDM.pdf?ci_sign=11846d9f9d5e9d7ee2535bcfcb4491a96fcf47a4 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Produkt ist nicht verfügbar
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6N137M 6N137M ONSEMI 6N137.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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CAV24C32WE-GT3 ONSEMI CAV24C32-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HCPL2631 HCPL2631 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FD08CE7A167A9E4&compId=HCPL2631.pdf?ci_sign=0fb5a3eb590013d7ec8b045f3280bda1c34df30e Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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HCPL2631SDM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C023CAB14A0D6&compId=HCPL2631SDM.pdf?ci_sign=8bb751d3909e92dc3730ea1db8501c5625275357 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
Produkt ist nicht verfügbar
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MJ4502G MJ4502G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0A57A321E6469&compId=MJ4502G.PDF?ci_sign=12079b53f982c7410ee322dfb69ca691d14f484f Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
Mindestbestellmenge: 9
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NSVT1418LT1G ONSEMI nsvt1418l-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDA032N08 FDA032N08 ONSEMI fda032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.13 EUR
17+4.25 EUR
30+3.62 EUR
Mindestbestellmenge: 14
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N64S830HAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463760D5&compId=N64S830HA-D.pdf?ci_sign=8f6b4b8ac520df49e3e3767630d7d4bdee858f3f Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778C60D5&compId=N01S830HA-D.pdf?ci_sign=dba68c514ec13d53aca0db206b4009300362a47b Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22IT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778DA0D5&compId=N01S830HA-D.pdf?ci_sign=dd8af5e72bb0ac9dfb37e587823e63e0e3334dd6 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778EE0D5&compId=N01S830HA-D.pdf?ci_sign=ecdae87dc015e2b12de60ec33c91c8e76c7be652 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22IT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779020D5&compId=N01S830HA-D.pdf?ci_sign=8c3b60010a50ede420ab6347fef98c24733ce4fe Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N25S830HAS22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D8A0D5&compId=N25S830HA-D.pdf?ci_sign=d57effb6aa50965f0ddc4f257f637ba8059bfff9 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N25S830HAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D9E0D5&compId=N25S830HA-D.pdf?ci_sign=828266c4ac3d654d122f0dc3245d294011f7bae6 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N64S830HAS22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E1ED897C0D5&compId=N64S830HA-D.pdf?ci_sign=eaa9aa05efc1d081d9fd09b56531a3d413ccb1c6 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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NXV08A170DB2 ONSEMI nxv08a170db2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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NCP1034DR2G NCP1034DR2G ONSEMI ncp1034-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
Produkt ist nicht verfügbar
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MID400 MID400 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC6FB277869E27&compId=MID400.pdf?ci_sign=8f3d9c1e28910b6a6b3f001cd9fe3395afcf7b60 Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
Produkt ist nicht verfügbar
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2SC5242OTU ONSEMI fja4313-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Produkt ist nicht verfügbar
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NCP1562ADBR2G ONSEMI ncp1562a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 ONSEMI fgy120t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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AFGY120T65SPD ONSEMI afgy120t65spd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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TIP29AG TIP29AG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
63+1.14 EUR
84+0.86 EUR
Mindestbestellmenge: 41
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NC7SZ04L6X NC7SZ04-D.PDF
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Quiescent current: 2µA
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.08 EUR
Mindestbestellmenge: 5000
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MMSZ18T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ18T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 5260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
910+0.079 EUR
1316+0.054 EUR
1558+0.046 EUR
1924+0.037 EUR
2137+0.033 EUR
Mindestbestellmenge: 625
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SZMMSZ18T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ5235BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5235BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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SZMMSZ5235BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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MPSA29-D26Z pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49
MPSA29-D26Z
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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MPSA29 pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49
MPSA29
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
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NCP1032AMNTXG ncp1032-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Mounting: SMD
Topology: flyback
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 4.2Ω
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
Case: WDFN8
Kind of integrated circuit: AC/DC switcher; PWM controller
Produkt ist nicht verfügbar
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MMBTH81 mpsh81-d.pdf
MMBTH81
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
auf Bestellung 1737 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
455+0.16 EUR
516+0.14 EUR
618+0.12 EUR
705+0.1 EUR
782+0.092 EUR
863+0.083 EUR
910+0.079 EUR
1000+0.076 EUR
Mindestbestellmenge: 358
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NSVMMBTH81LT1G mmbth81-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FSQ0765RSUDTU fsq0765rs-d.pdf FAIRS29178-1.pdf?t.download=true&u=5oefqw
FSQ0765RSUDTU
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Output voltage: 650V
Power: 70W
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Operating temperature: -25...85°C
Number of channels: 1
On-state resistance: 1.6Ω
Output current: 2.28A
Operating voltage: 8...19V DC
Input voltage: 85...265V
Frequency: 66.7kHz
auf Bestellung 318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
29+2.49 EUR
33+2.2 EUR
100+2.16 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
FDP038AN06A0 fdp038an06a0-d.pdf
FDP038AN06A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
19+3.8 EUR
22+3.36 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BSS138 BSS138-FAI.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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HUFA75645S3S FAIRS45983-1.pdf?t.download=true&u=5oefqw hufa75645s3s-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP050AN06A0 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE912DD11E66259&compId=FDB050AN06A0.pdf?ci_sign=caf3e3d3b2a8e31c973cf4e8907f7b9cad073665
FDP050AN06A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDP054N10 fdp054n10-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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FQP8N80C FQPF8N80C-D.pdf
FQP8N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 32A
Produkt ist nicht verfügbar
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NRVB0530T1G mbr0530t1-d.pdf
NRVB0530T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
Mindestbestellmenge: 455
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NCP1253BSN65T1G ncp1253-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Produkt ist nicht verfügbar
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MC34064D-5G mc34064-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
auf Bestellung 2201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
196+0.55 EUR
Mindestbestellmenge: 196
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NCP1253BSN100T1G ncp1253-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Produkt ist nicht verfügbar
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BC818-40LT1G bc818-40lt1-d.pdf
BC818-40LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NSVBC818-40LT1G bc818-40lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBD701LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869A00671C83C469&compId=MMBD701LT1G.PDF?ci_sign=d7dd5e26a70af96f33a28d1987476e0f2fc7ce83
MMBD701LT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 2052 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
610+0.12 EUR
715+0.1 EUR
810+0.088 EUR
925+0.077 EUR
1107+0.065 EUR
Mindestbestellmenge: 295
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MMBD7000LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BE26AEC4EB2469&compId=MMBD7000LT1G.PDF?ci_sign=bfb8c43a3ff6a4faf2948d9e7eb7b6cf1be95216
MMBD7000LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 5490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
758+0.094 EUR
1117+0.064 EUR
1334+0.054 EUR
1684+0.042 EUR
1993+0.036 EUR
2337+0.031 EUR
3000+0.025 EUR
Mindestbestellmenge: 625
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MMBD1203 MMBD1202-D.PDF
MMBD1203
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
481+0.15 EUR
521+0.14 EUR
720+0.099 EUR
841+0.085 EUR
962+0.074 EUR
1122+0.064 EUR
Mindestbestellmenge: 385
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MMBD1205 MMBD1202-D.PDF
MMBD1205
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
auf Bestellung 2797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
459+0.16 EUR
645+0.11 EUR
755+0.095 EUR
1083+0.066 EUR
1257+0.057 EUR
Mindestbestellmenge: 358
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MMBD1201 MMBD1202-D.PDF
MMBD1201
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
446+0.16 EUR
Mindestbestellmenge: 446
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MMBD6050LT1G mmbd6050lt1-d.pdf
MMBD6050LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1042+0.069 EUR
1553+0.046 EUR
1825+0.039 EUR
2400+0.03 EUR
Mindestbestellmenge: 625
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MMBD452LT1G mmbd452lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
auf Bestellung 8990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
424+0.17 EUR
477+0.15 EUR
550+0.13 EUR
667+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 358
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MMBD6100LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BE24AF7F784469&compId=MMBD6100LT1G.PDF?ci_sign=e641584af28f0bdf962d648b3d3f6fa44bc18757
MMBD6100LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
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MMBD1504A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDF8B87534A745&compId=MMBD1501A.pdf?ci_sign=d99323952496222ff3c44c2dafec44384b225081
MMBD1504A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.15V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
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MMBD4148 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDFC1EA3DE4745&compId=MMBD4148.pdf?ci_sign=678a4b0ec83976d1c367c3d46bde72e8144308c5
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MCH4020-TL-H ena1280-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
Produkt ist nicht verfügbar
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FDP047AN08A0 fdh047an08a0-d.pdf
FDP047AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
23+3.15 EUR
50+2.57 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
6N139M pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FB98EEB44C1C9E4&compId=6N139.pdf?ci_sign=6516884db1f1a450a7424a76c4cb26ca64a478d6
6N139M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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6N139SDM pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD6DAB0E4D58749&compId=6N139SDM.pdf?ci_sign=11846d9f9d5e9d7ee2535bcfcb4491a96fcf47a4
6N139SDM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Produkt ist nicht verfügbar
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6N137M 6N137.pdf
6N137M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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CAV24C32WE-GT3 CAV24C32-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HCPL2631 pVersion=0046&contRep=ZT&docId=005056AB752F1ED39FD08CE7A167A9E4&compId=HCPL2631.pdf?ci_sign=0fb5a3eb590013d7ec8b045f3280bda1c34df30e
HCPL2631
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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HCPL2631SDM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C023CAB14A0D6&compId=HCPL2631SDM.pdf?ci_sign=8bb751d3909e92dc3730ea1db8501c5625275357
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
Produkt ist nicht verfügbar
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MJ4502G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0A57A321E6469&compId=MJ4502G.PDF?ci_sign=12079b53f982c7410ee322dfb69ca691d14f484f
MJ4502G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.99 EUR
Mindestbestellmenge: 9
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NSVT1418LT1G nsvt1418l-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDA032N08 fda032n08-d.pdf
FDA032N08
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
17+4.25 EUR
30+3.62 EUR
Mindestbestellmenge: 14
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N64S830HAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463760D5&compId=N64S830HA-D.pdf?ci_sign=8f6b4b8ac520df49e3e3767630d7d4bdee858f3f
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778C60D5&compId=N01S830HA-D.pdf?ci_sign=dba68c514ec13d53aca0db206b4009300362a47b
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22IT pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778DA0D5&compId=N01S830HA-D.pdf?ci_sign=dd8af5e72bb0ac9dfb37e587823e63e0e3334dd6
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778EE0D5&compId=N01S830HA-D.pdf?ci_sign=ecdae87dc015e2b12de60ec33c91c8e76c7be652
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22IT pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779020D5&compId=N01S830HA-D.pdf?ci_sign=8c3b60010a50ede420ab6347fef98c24733ce4fe
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N25S830HAS22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D8A0D5&compId=N25S830HA-D.pdf?ci_sign=d57effb6aa50965f0ddc4f257f637ba8059bfff9
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N25S830HAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D9E0D5&compId=N25S830HA-D.pdf?ci_sign=828266c4ac3d654d122f0dc3245d294011f7bae6
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N64S830HAS22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E1ED897C0D5&compId=N64S830HA-D.pdf?ci_sign=eaa9aa05efc1d081d9fd09b56531a3d413ccb1c6
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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NXV08A170DB2 nxv08a170db2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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NCP1034DR2G ncp1034-d.pdf
NCP1034DR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
Produkt ist nicht verfügbar
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MID400 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC6FB277869E27&compId=MID400.pdf?ci_sign=8f3d9c1e28910b6a6b3f001cd9fe3395afcf7b60
MID400
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
Produkt ist nicht verfügbar
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2SC5242OTU fja4313-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Produkt ist nicht verfügbar
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NCP1562ADBR2G ncp1562a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 fgy120t65spd-f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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AFGY120T65SPD afgy120t65spd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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TIP29AG TIP29A-C_TIP30A-C.pdf
TIP29AG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
63+1.14 EUR
84+0.86 EUR
Mindestbestellmenge: 41
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