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MBR160RLG MBR160RLG ONSEMI mbr150-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Mounting: THT
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 4895 Stücke:
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228+0.37 EUR
291+0.3 EUR
334+0.25 EUR
447+0.19 EUR
468+0.18 EUR
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MBR160G MBR160G ONSEMI MBR160.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.75V; bulk
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Mounting: THT
Max. forward voltage: 0.75V
Kind of package: bulk
auf Bestellung 2715 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.37 EUR
266+0.32 EUR
290+0.3 EUR
325+0.26 EUR
358+0.24 EUR
391+0.21 EUR
443+0.19 EUR
Mindestbestellmenge: 228 Stücke
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1N5380BG 1N5380BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 775 Stücke:
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179+0.48 EUR
222+0.38 EUR
248+0.35 EUR
304+0.29 EUR
332+0.26 EUR
334+0.25 EUR
Mindestbestellmenge: 179 Stücke
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SURD8530T4G-VF01 ONSEMI MURD530-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5A; 50ns; DPAK; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MC74ACT374DTR2G MC74ACT374DTR2G ONSEMI MC74AC374-D.pdf Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: TSSOP20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Produkt ist nicht verfügbar
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MC74ACT374DWG MC74ACT374DWG ONSEMI MC74AC374-D.pdf Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: TTL
Kind of package: tube
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Produkt ist nicht verfügbar
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MC74ACT374DWR2G ONSEMI MC74AC374-D.pdf Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Produkt ist nicht verfügbar
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NTMYS1D2N04CLTWG ONSEMI ntmys1d2n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 258A; Idm: 900A; 67W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 258A
Pulsed drain current: 900A
Power dissipation: 67W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMYS1D2N04CLTWG ONSEMI nvmys1d2n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 258A; Idm: 900A; 67W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 258A
Pulsed drain current: 900A
Power dissipation: 67W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC33275DT-2.5RKG MC33275DT-2.5RKG ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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FDMS8320LDC FDMS8320LDC ONSEMI fdms8320ldc-d.pdf FDMS8320LDC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8320L ONSEMI fdms8320l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 248A; Idm: 943A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 248A
Pulsed drain current: 943A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS003N10MCT1G ONSEMI nvmfws003n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 169A; Idm: 900A; 97W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 97W
Gate charge: 62nC
Polarisation: unipolar
Drain current: 169A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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MMBZ5232BLT1G MMBZ5232BLT1G ONSEMI MMBZ52xxBLT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 5.6V
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Semiconductor structure: single diode
auf Bestellung 4641 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
962+0.088 EUR
1437+0.06 EUR
1719+0.05 EUR
2193+0.039 EUR
2646+0.032 EUR
3206+0.026 EUR
3379+0.025 EUR
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SZMMBZ5232BLT1G ONSEMI MMBZ52xxBLT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 5.6V
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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NCP114AMX185TCG NCP114AMX185TCG ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.33V
Output voltage: 1.85V
Output current: 0.3A
Case: uDFN4
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
410+0.2 EUR
459+0.19 EUR
538+0.15 EUR
589+0.14 EUR
1000+0.13 EUR
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NCP186BMX185TAG ONSEMI ncp186-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD
Type of integrated circuit: voltage regulator
Input voltage: 1.8...5.5V
Output voltage: 1.85V
Output current: 1A
Case: XDFN8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Voltage drop: 0.28V
Manufacturer series: NCP186x
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NCP1654BD65R2G NCP1654BD65R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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NCP1654BD200R2G NCP1654BD200R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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NSM4002MR6T1G ONSEMI nsm4002mr6-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.2/0.5A
Produkt ist nicht verfügbar
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TL431AIDR2G TL431AIDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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FOD3120TSV ONSEMI fod3120-d.pdf Category: Optocouplers - Unclassified
Description: FOD3120TSV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.98 EUR
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FDMS7670 ONSEMI fdms7670-d.pdf FAIR-S-A0002363700-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 62W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 5.3mΩ
Produkt ist nicht verfügbar
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MM74HCT244WM MM74HCT244WM ONSEMI MM74HCT244WM.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
Produkt ist nicht verfügbar
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FCH072N60 ONSEMI FCH072N60-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR0520L MBR0520L ONSEMI MBR0520L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 5.5A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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BZX79C15-T50R ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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BZX79C15-T50A ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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2SD1816T-TL-H ONSEMI 2sb1216_2sd1816-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 4A
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 180MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
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74AC00MTC 74AC00MTC ONSEMI 74AC00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Manufacturer series: AC
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 Mindestbestellmenge: 3 Stücke
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MC14021BDG MC14021BDG ONSEMI MC14021BDG.PDF Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
auf Bestellung 1708 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.9 EUR
133+0.64 EUR
149+0.57 EUR
161+0.52 EUR
176+0.49 EUR
185+0.46 EUR
528+0.39 EUR
1008+0.36 EUR
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MC14081BDG MC14081BDG ONSEMI MC140xxB.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Delay time: 130ns
Mounting: SMD
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: quad; 4
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
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FDD3670 ONSEMI fdd3670-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 100A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 100A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP308MT090TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.84V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT125TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
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NCP308MT180TBG ONSEMI ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.67V
Number of channels: 1
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NCP308MT190TBG ONSEMI ncp308-d.pdf ONSM-S-A0007016915-1.pdf?t.download=true&u=5oefqw Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT250TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
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NCP308MT280TBG ONSEMI NCP308-D.PDF ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT300TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT330TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT500TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MTADJTBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308SN125T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308SN190T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308SN250T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
Produkt ist nicht verfügbar
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FDMC4435BZ FDMC4435BZ ONSEMI FDMC4435BZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
On-state resistance: 37mΩ
Mounting: SMD
Power dissipation: 31W
Gate charge: 53nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -18A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: MLP8
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NTD6414ANT4G ONSEMI ntd6414an-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMA1023PZFDMA1023PZ
FDMA1023PZFDMA1023PZ
 FDMA1023PZ ONSEMI FDMA1023PZ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -3.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 0.195Ω
Mounting: SMD
Power dissipation: 1.5W
Produkt ist nicht verfügbar
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NUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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SZNUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDD2582 FDD2582 ONSEMI FDD2582.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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MBR30170MFST3G ONSEMI mbr30170mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Max. forward impulse current: 540A
Max. forward voltage: 0.89V
Leakage current: 50µA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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MBR30170MFST1G ONSEMI mbr30170mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
Produkt ist nicht verfügbar
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1N5948BRLG 1N5948BRLG ONSEMI 1N59xxB.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
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685+0.12 EUR
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NCV8518CPDR2G ONSEMI ncv8518c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Produkt ist nicht verfügbar
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NCV8518CPWR2G ONSEMI ncv8518c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Produkt ist nicht verfügbar
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FDP150N10 FDP150N10 ONSEMI fdp150n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Mounting: THT
Pulsed drain current: 228A
Power dissipation: 110W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 57A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 15mΩ
Produkt ist nicht verfügbar
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FDP150N10A-F102 FDP150N10A-F102 ONSEMI FDP150N10A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Mounting: THT
Pulsed drain current: 200A
Power dissipation: 91W
Gate charge: 16.2nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 15mΩ
Produkt ist nicht verfügbar
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DF02M DF02M ONSEMI DF005-10m.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
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MBR160RLG mbr150-d.pdf
MBR160RLG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Mounting: THT
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
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MBR160G MBR160.PDF
MBR160G
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.75V; bulk
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Mounting: THT
Max. forward voltage: 0.75V
Kind of package: bulk
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266+0.32 EUR
290+0.3 EUR
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1N5380BG 1N53xx.PDF
1N5380BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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179+0.48 EUR
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248+0.35 EUR
304+0.29 EUR
332+0.26 EUR
334+0.25 EUR
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SURD8530T4G-VF01 MURD530-D.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5A; 50ns; DPAK; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MC74ACT374DTR2G MC74AC374-D.pdf
MC74ACT374DTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: TSSOP20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Produkt ist nicht verfügbar
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MC74ACT374DWG MC74AC374-D.pdf
MC74ACT374DWG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: TTL
Kind of package: tube
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Produkt ist nicht verfügbar
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MC74ACT374DWR2G MC74AC374-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Produkt ist nicht verfügbar
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NTMYS1D2N04CLTWG ntmys1d2n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 258A; Idm: 900A; 67W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 258A
Pulsed drain current: 900A
Power dissipation: 67W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMYS1D2N04CLTWG nvmys1d2n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 258A; Idm: 900A; 67W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 258A
Pulsed drain current: 900A
Power dissipation: 67W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC33275DT-2.5RKG mc33275-d.pdf
MC33275DT-2.5RKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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FDMS8320LDC fdms8320ldc-d.pdf FDMS8320LDC-D.PDF
FDMS8320LDC
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS8320L fdms8320l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 248A; Idm: 943A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 248A
Pulsed drain current: 943A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS003N10MCT1G nvmfws003n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 169A; Idm: 900A; 97W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 97W
Gate charge: 62nC
Polarisation: unipolar
Drain current: 169A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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MMBZ5232BLT1G MMBZ52xxBLT1G.PDF
MMBZ5232BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 5.6V
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Semiconductor structure: single diode
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1437+0.06 EUR
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SZMMBZ5232BLT1G MMBZ52xxBLT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 5.6V
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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NCP114AMX185TCG ncp114-d.pdf
NCP114AMX185TCG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.33V
Output voltage: 1.85V
Output current: 0.3A
Case: uDFN4
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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AnzahlPrivatkunde
278+0.31 EUR
410+0.2 EUR
459+0.19 EUR
538+0.15 EUR
589+0.14 EUR
1000+0.13 EUR
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NCP186BMX185TAG ncp186-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD
Type of integrated circuit: voltage regulator
Input voltage: 1.8...5.5V
Output voltage: 1.85V
Output current: 1A
Case: XDFN8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Voltage drop: 0.28V
Manufacturer series: NCP186x
Produkt ist nicht verfügbar
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NCP1654BD65R2G ncp1654-d.pdf
NCP1654BD65R2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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NCP1654BD200R2G ncp1654-d.pdf
NCP1654BD200R2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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NSM4002MR6T1G nsm4002mr6-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.2/0.5A
Produkt ist nicht verfügbar
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TL431AIDR2G tl431-d.pdf
TL431AIDR2G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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FOD3120TSV fod3120-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3120TSV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.98 EUR
Mindestbestellmenge: 1000 Stücke
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FDMS7670 fdms7670-d.pdf FAIR-S-A0002363700-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 62W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 5.3mΩ
Produkt ist nicht verfügbar
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MM74HCT244WM MM74HCT244WM.pdf
MM74HCT244WM
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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FCH072N60 FCH072N60-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR0520L MBR0520L.pdf
MBR0520L
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 5.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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BZX79C15-T50R BZX79C.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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BZX79C15-T50A BZX79C.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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2SD1816T-TL-H 2sb1216_2sd1816-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 4A
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 180MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74AC00MTC 74AC00.pdf
74AC00MTC
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Manufacturer series: AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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MC14021BDG MC14021BDG.PDF
MC14021BDG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
auf Bestellung 1708 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
95+0.9 EUR
133+0.64 EUR
149+0.57 EUR
161+0.52 EUR
176+0.49 EUR
185+0.46 EUR
528+0.39 EUR
1008+0.36 EUR
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MC14081BDG MC140xxB.PDF
MC14081BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Delay time: 130ns
Mounting: SMD
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: quad; 4
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
Mindestbestellmenge: 162 Stücke
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FDD3670 fdd3670-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 100A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 100A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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NCP308MT090TBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.84V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT125TBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT180TBG ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.67V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT190TBG ncp308-d.pdf ONSM-S-A0007016915-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT250TBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT280TBG NCP308-D.PDF ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT300TBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT330TBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MT500TBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308MTADJTBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308SN125T1G ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308SN190T1G ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Produkt ist nicht verfügbar
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NCP308SN250T1G ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
Produkt ist nicht verfügbar
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FDMC4435BZ FDMC4435BZ.pdf
FDMC4435BZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
On-state resistance: 37mΩ
Mounting: SMD
Power dissipation: 31W
Gate charge: 53nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -18A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: MLP8
auf Bestellung 2389 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
41+2.11 EUR
51+1.69 EUR
59+1.45 EUR
84+1.01 EUR
100+0.88 EUR
500+0.77 EUR
Mindestbestellmenge: 41 Stücke
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NTD6414ANT4G ntd6414an-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMA1023PZ FDMA1023PZ.pdf
FDMA1023PZFDMA1023PZ
FDMA1023PZFDMA1023PZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -3.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 0.195Ω
Mounting: SMD
Power dissipation: 1.5W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NUP1105LT1G nup1105l-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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SZNUP1105LT1G nup1105l-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDD2582 FDD2582.pdf
FDD2582
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MBR30170MFST3G mbr30170mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Max. forward impulse current: 540A
Max. forward voltage: 0.89V
Leakage current: 50µA
Type of diode: Schottky rectifying
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MBR30170MFST1G mbr30170mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
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1N5948BRLG 1N59xxB.pdf
1N5948BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
auf Bestellung 4841 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
343+0.25 EUR
410+0.2 EUR
491+0.18 EUR
685+0.12 EUR
1000+0.12 EUR
Mindestbestellmenge: 200 Stücke
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NCV8518CPDR2G ncv8518c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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NCV8518CPWR2G ncv8518c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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FDP150N10 fdp150n10-d.pdf
FDP150N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Mounting: THT
Pulsed drain current: 228A
Power dissipation: 110W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 57A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 15mΩ
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FDP150N10A-F102 FDP150N10A.pdf
FDP150N10A-F102
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Mounting: THT
Pulsed drain current: 200A
Power dissipation: 91W
Gate charge: 16.2nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 15mΩ
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DF02M DF005-10m.pdf
DF02M
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Produkt ist nicht verfügbar
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