| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FOD3182 | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Kind of output: transistor Type of optocoupler: optocoupler Mounting: THT Output voltage: 0...25V Turn-off time: 55ns Turn-on time: 75ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Manufacturer series: FOD3180 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FOD3182SDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Manufacturer series: FOD3182 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 50kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1N4004 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MM3Z4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR58 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Mounting: SMD Kind of package: reel; tape On-state resistance: 60Ω Type of transistor: N-JFET Case: SOT23 Polarisation: unipolar Gate-source voltage: -40V Drain current: 8mA Gate current: 50mA Power dissipation: 0.25W |
auf Bestellung 904 Stücke: Lieferzeit 14-21 Tag (e) |
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| CS51414EDR8G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of integrated circuit: DC/DC converter Case: SO8 Type of integrated circuit: PMIC |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP160BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.105V Output current: 0.25A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP160AFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.105V Output current: 0.25A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP161AFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD Manufacturer series: NCP161 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.185V Output current: 0.45A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP161BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD Manufacturer series: NCP161 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.185V Output current: 0.45A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV1117DT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NXH240B120H3Q1P1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32 Electrical mounting: Press-Fit Application: for UPS; Inverter Type of semiconductor module: IGBT Case: PIM32 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 92A Pulsed collector current: 276A Max. off-state voltage: 1.2kV Technology: SiC Semiconductor structure: SiC diode/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FDD86252 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 103mΩ Gate-source voltage: ±20V Drain current: 27A Power dissipation: 89W Drain-source voltage: 150V Technology: PowerTrench® |
auf Bestellung 2327 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6673BZ | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8651 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 27.2nC On-state resistance: 9.3mΩ Gate-source voltage: ±12V Drain current: 20A Drain-source voltage: 30V Power dissipation: 41W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DTA123EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 8...15 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DTA123EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Collector current: 0.1A Power dissipation: 0.6W Current gain: 8...15 Quantity in set/package: 8000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DTA123JET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 80...140 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MBRF30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V Semiconductor structure: common cathode; double Case: TO220FP Type of diode: Schottky rectifying Kind of package: tube Mounting: THT Max. forward voltage: 0.93V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 250A |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBR30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying Kind of package: tube Mounting: THT Max. forward voltage: 0.8V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5x6 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRVB30H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Kind of package: reel; tape Power dissipation: 5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SZBZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| SZBZX84C10ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| STD5406NT4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Pulsed drain current: 150A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NXH003P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 350A Pulsed drain current: 700A Drain-source voltage: 1.2kV Power dissipation: 979W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NXH003P120M3F2PTNG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 435A Pulsed drain current: 870A Drain-source voltage: 1.2kV Power dissipation: 1482W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NXH007F120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 15.9mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 1.2kV Power dissipation: 353W Topology: H-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NXH008T120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 15mΩ Drain current: 127A Pulsed drain current: 387A Drain-source voltage: 1.2kV Power dissipation: 371W Topology: 3-level inverter TNPC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NXH011F120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 21.9mΩ Drain current: 105A Pulsed drain current: 316A Drain-source voltage: 1.2kV Power dissipation: 244W Topology: H-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NXH011T120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 28.1mΩ Drain current: 91A Pulsed drain current: 273A Drain-source voltage: 1.2kV Power dissipation: 272W Topology: 3-level inverter TNPC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NXH400N100H4Q2F2PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42 Type of semiconductor module: IGBT Semiconductor structure: SiC diode/transistor Max. off-state voltage: 1kV Collector current: 400A Application: for UPS; Inverter Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Technology: SiC Mechanical mounting: screw Case: PIM42 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Manufacturer series: HCT Kind of package: reel; tape Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 4...5.5V DC Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of inputs: 5 Technology: CMOS; TTL Type of integrated circuit: digital Family: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC74HCT4851ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Manufacturer series: HCT Kind of package: reel; tape Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of inputs: 11 Technology: CMOS; TTL Type of integrated circuit: digital Family: HCT |
Produkt ist nicht verfügbar |
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MC74HCT4852ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Manufacturer series: HCT Kind of package: reel; tape Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of inputs: 8 Technology: CMOS; TTL Type of integrated circuit: digital Family: HCT |
Produkt ist nicht verfügbar |
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SBCP56-16T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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BUV21G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 40A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 8MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SBC807-16LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NTLJD3115PT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -20A; 2.3W Case: WDFN6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -4.1A Gate charge: 5.5nC On-state resistance: 0.1Ω Power dissipation: 2.3W Gate-source voltage: ±8V Kind of channel: enhancement Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTLJD3119CTBG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Case: WDFN6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 2.8/-2.4A On-state resistance: 65/100mΩ Power dissipation: 1.5W Gate-source voltage: ±8V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FOD3182 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3180 |
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Hersteller: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3180TV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3182SDV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4004 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM3Z4V7T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| BSR58 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60Ω
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60Ω
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
auf Bestellung 904 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 196+ | 0.37 EUR |
| 329+ | 0.22 EUR |
| 382+ | 0.19 EUR |
| 532+ | 0.13 EUR |
| CS51414EDR8G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.53 EUR |
| 39+ | 1.87 EUR |
| 42+ | 1.72 EUR |
| 50+ | 1.7 EUR |
| NCP160BFCS514T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP160AFCS514T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP161AFCS514T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP161BFCS514T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV1117DT50RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4007 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH240B120H3Q1P1G |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD86252 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 65+ | 1.12 EUR |
| 67+ | 1.07 EUR |
| 100+ | 0.97 EUR |
| 250+ | 0.93 EUR |
| FDS6673BZ | |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 73+ | 0.99 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.65 EUR |
| FDMC8651 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123JET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRF30H100CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.93V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.93V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 49+ | 1.49 EUR |
| 58+ | 1.24 EUR |
| MBR30H100CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR30H100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB30H100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
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| NRVB30H100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
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| SB540 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
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| SZBZX84C10LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C10ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| STD5406NT4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 150A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 150A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NXH003P120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
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| NXH003P120M3F2PTNG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
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| NXH007F120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
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| NXH008T120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
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| NXH011F120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
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| NXH011T120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
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| NXH400N100H4Q2F2PG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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| M74HCT4852ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
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| MC74HCT4851ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of inputs: 11
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of inputs: 11
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
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| MC74HCT4852ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
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| SBCP56-16T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
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| BUV21G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 8MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 8MHz
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| SBC807-16LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NTLJD3115PT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -20A; 2.3W
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 5.5nC
On-state resistance: 0.1Ω
Power dissipation: 2.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -20A; 2.3W
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 5.5nC
On-state resistance: 0.1Ω
Power dissipation: 2.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
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| NTLJD3119CTBG |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
On-state resistance: 65/100mΩ
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
On-state resistance: 65/100mΩ
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
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