| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| KA1H0165RTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 0.7A Output voltage: 650V Frequency: 0.1MHz Number of channels: 1 Case: TO220F-4 Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 10Ω Duty cycle factor: 64...70% Kind of package: tube Power: 40W Operating voltage: 10...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FGH50T65UPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 170W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 230nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FGHL50T65LQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 170W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 509nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FGHL50T65MQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 94nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FGHL50T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 99nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FGHL50T65SQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 99.7nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| AFGHL50T65RQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 173W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 65nC Kind of package: tube Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| AFGHL50T65SQ | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 99nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| AFGHL50T65SQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 102nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| AFGHL50T65SQDC | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 94nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MB10S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FGHL75T65MQDTL4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 375W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Type of integrated circuit: driver Mounting: SMD Case: SO8 Output current: -2...1A Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP Operating temperature: -40...105°C Pulse fall time: 55ns Output voltage: 2...13.9V Kind of package: reel; tape Kind of integrated circuit: IGBT gate driver Number of channels: 1 Impulse rise time: 55ns Supply voltage: 11...20V DC |
auf Bestellung 1528 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC33153PG | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: DIP8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: tube Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP Topology: H-bridge |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MUN5233DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ Mounting: SMD Base resistor: 4.7kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 80...200 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V |
auf Bestellung 968 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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6N138M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FNB41060 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Mounting: THT Frequency: 20kHz Number of channels: 6 Power dissipation: 32W Operating voltage: 13.5...16.5/0...400V DC Kind of integrated circuit: 3-phase motor controller; IPM Collector-emitter voltage: 600V Technology: Motion SPM® 45 Case: SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Operating temperature: -40...125°C Output current: 10A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DTC143ZM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSVDTC143ZM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Application: automotive industry Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC74HCT86ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 20ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74HCT86ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 20ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NJVMJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSD4148 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.4W Features of semiconductor devices: fast switching Capacitance: 4pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCS20034DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SO14 Operating temperature: -40...125°C Integrated circuit features: rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MC14518BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Type of integrated circuit: digital Kind of integrated circuit: BCD; up counter Case: SO16WB Technology: CMOS Family: HEF4000B Kind of package: reel; tape Mounting: SMD Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MC14518BDWG | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Type of integrated circuit: digital Kind of integrated circuit: BCD; up counter Case: SO16WB Technology: CMOS Family: HEF4000B Kind of package: tube Mounting: SMD Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LM2576D2T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LM2576D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NL27WZ00USG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC Type of integrated circuit: digital Technology: CMOS Mounting: SMD Case: US8 Family: AUC Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 2 Number of outputs: 1 Number of channels: 2 Delay time: 2.4ns Supply voltage: 1.65...5.5V Kind of gate: NAND |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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KSP92BU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 40 Mounting: THT Kind of package: bulk Frequency: 50MHz |
auf Bestellung 7761 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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KSP92TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NST3904DP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963 Polarisation: bipolar Case: SOT963 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.42W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NST3904DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Polarisation: bipolar Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.357W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSVJ6904DSB6T1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA Polarisation: unipolar Semiconductor structure: common source Case: CPH6 Type of transistor: N-JFET x2 Kind of package: reel; tape Mounting: SMD Gate-source voltage: -25V Gate current: 10mA Drain current: 20mA Power dissipation: 0.7W Drain-source voltage: 25V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NSVT3904DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Application: automotive industry Polarisation: bipolar Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.357W Collector current: 0.2A Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.12kW Max. off-state voltage: 2.5V Breakdown voltage: 4V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 6µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTBG028N170M1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 195A Power dissipation: 214W Gate charge: 222nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 53A Kind of channel: enhancement Drain-source voltage: 1.7kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 57mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NVBG020N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Mounting: SMD Pulsed drain current: 392A Power dissipation: 3.7W Gate charge: 0.22µC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 8.6A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V Kind of package: reel; tape Case: D2PAK-7 On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NTBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 448A Power dissipation: 3.7W Gate charge: 200nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -5...15V On-state resistance: 27mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTBG020N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Mounting: SMD Pulsed drain current: 392A Power dissipation: 3.7W Gate charge: 0.22µC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 8.6A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V Kind of package: reel; tape Case: D2PAK-7 On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTBG022N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 297A Power dissipation: 220W Gate charge: 142nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 71A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 44mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NVBG020N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.8A Pulsed drain current: 448A Power dissipation: 3.7W Case: D2PAK-7 Gate-source voltage: -5...15V On-state resistance: 27mΩ Mounting: SMD Gate charge: 200nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVBG022N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -3...18V Gate charge: 142nC On-state resistance: 44mΩ Power dissipation: 220W Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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1N5362BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 28V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5368BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 47V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 47V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5250B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 20V; CASE017AG; single diode; bulk; 1N52xxB Tolerance: ±5% Mounting: THT Manufacturer series: 1N52xxB Power dissipation: 0.5W Kind of package: bulk Semiconductor structure: single diode Case: CASE017AG Zener voltage: 20V Type of diode: Zener |
auf Bestellung 4729 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74HC10ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC Type of integrated circuit: digital Number of channels: 3 Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V Kind of gate: NAND Quiescent current: 1µA Number of inputs: 3 Number of outputs: 3 Delay time: 16ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC14070BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 150ns Family: HEF4000B |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H848NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Power dissipation: 37W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 319A Gate charge: 25nC |
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| NVMFS6H848NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Power dissipation: 37W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 319A Gate charge: 25nC |
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ESD5Z5.0T5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF Type of diode: TVS Peak pulse power dissipation: 0.174kW Max. off-state voltage: 5V Breakdown voltage: 6.2V Max. forward impulse current: 9.4A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 50nA Capacitance: 80pF Number of channels: 1 |
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SZESD5Z5.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.2V; unidirectional; SOD523; automotive industry Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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1N4937RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 30A Case: CASE59-10; DO41 Kind of package: reel; tape Max. forward voltage: 1.2V Reverse recovery time: 200ns |
auf Bestellung 860 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4937G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 30A Case: CASE59-10; DO41 Kind of package: bulk Max. forward voltage: 1.2V Reverse recovery time: 200ns |
auf Bestellung 508 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDWS86368-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Power dissipation: 214W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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|
74VHC74MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: VHC |
auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC74MX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74VHC74DR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -55...125°C Supply voltage: 2.2...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74VHC74DTG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 2.2...5.5V DC Kind of package: tube Trigger: positive-edge-triggered Manufacturer series: VHC |
Produkt ist nicht verfügbar |
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MC74VHC74DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 2.2...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| KA1H0165RTU |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH50T65UPD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 170W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 170W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGHL50T65LQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 170W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 509nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 170W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 509nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGHL50T65MQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGHL50T65MQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FGHL50T65SQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99.7nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99.7nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL50T65RQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Application: automotive industry
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL50T65SQ |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL50T65SQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL50T65SQDC |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MB10S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| FGHL75T65MQDTL4 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33153DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Output current: -2...1A
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Operating temperature: -40...105°C
Pulse fall time: 55ns
Output voltage: 2...13.9V
Kind of package: reel; tape
Kind of integrated circuit: IGBT gate driver
Number of channels: 1
Impulse rise time: 55ns
Supply voltage: 11...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Output current: -2...1A
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Operating temperature: -40...105°C
Pulse fall time: 55ns
Output voltage: 2...13.9V
Kind of package: reel; tape
Kind of integrated circuit: IGBT gate driver
Number of channels: 1
Impulse rise time: 55ns
Supply voltage: 11...20V DC
auf Bestellung 1528 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33153PG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Topology: H-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Topology: H-bridge
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
| MUN5233DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80...200
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80...200
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
| 6N138M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Produkt ist nicht verfügbar
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| FNB41060 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 32W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 10A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 32W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 10A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| DTC143ZM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTC143ZM3T5G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...200
Produkt ist nicht verfügbar
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| MC74HCT86ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Produkt ist nicht verfügbar
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| MC74HCT86ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 20ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NJVMJD112T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MMSD4148 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Features of semiconductor devices: fast switching
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Features of semiconductor devices: fast switching
Capacitance: 4pF
Produkt ist nicht verfügbar
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| NCS20034DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Produkt ist nicht verfügbar
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| MC14518BDWR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MC14518BDWG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Technology: CMOS
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
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| LM2576D2T-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LM2576D2T-ADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NL27WZ00USG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Case: US8
Family: AUC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 2
Number of outputs: 1
Number of channels: 2
Delay time: 2.4ns
Supply voltage: 1.65...5.5V
Kind of gate: NAND
Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Case: US8
Family: AUC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 2
Number of outputs: 1
Number of channels: 2
Delay time: 2.4ns
Supply voltage: 1.65...5.5V
Kind of gate: NAND
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
| KSP92BU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 7761 Stücke:
Lieferzeit 14-21 Tag (e)
| KSP92TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
| NST3904DP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
Produkt ist nicht verfügbar
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| NST3904DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Produkt ist nicht verfügbar
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| NSVJ6904DSB6T1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NSVT3904DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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| ESD5Z2.5T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
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| NTBG028N170M1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 195A
Power dissipation: 214W
Gate charge: 222nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 53A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 195A
Power dissipation: 214W
Gate charge: 222nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 53A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NVBG020N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Pulsed drain current: 392A
Power dissipation: 3.7W
Gate charge: 0.22µC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 8.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 50mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Pulsed drain current: 392A
Power dissipation: 3.7W
Gate charge: 0.22µC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 8.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 448A
Power dissipation: 3.7W
Gate charge: 200nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 448A
Power dissipation: 3.7W
Gate charge: 200nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBG020N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Pulsed drain current: 392A
Power dissipation: 3.7W
Gate charge: 0.22µC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 8.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 50mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Mounting: SMD
Pulsed drain current: 392A
Power dissipation: 3.7W
Gate charge: 0.22µC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 8.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBG022N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 297A
Power dissipation: 220W
Gate charge: 142nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 44mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 297A
Power dissipation: 220W
Gate charge: 142nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 44mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NVBG020N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NVBG022N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| 1N5362BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5368BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5250B |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; CASE017AG; single diode; bulk; 1N52xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 20V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; CASE017AG; single diode; bulk; 1N52xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 20V
Type of diode: Zener
auf Bestellung 4729 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74HC10ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Number of channels: 3
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V
Kind of gate: NAND
Quiescent current: 1µA
Number of inputs: 3
Number of outputs: 3
Delay time: 16ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Number of channels: 3
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V
Kind of gate: NAND
Quiescent current: 1µA
Number of inputs: 3
Number of outputs: 3
Delay time: 16ns
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Im Einkaufswagen
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| MC14070BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
| NVMFS6H848NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 319A
Gate charge: 25nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 319A
Gate charge: 25nC
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| NVMFS6H848NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 319A
Gate charge: 25nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 319A
Gate charge: 25nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ESD5Z5.0T5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Peak pulse power dissipation: 0.174kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 9.4A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Capacitance: 80pF
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Peak pulse power dissipation: 0.174kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 9.4A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Capacitance: 80pF
Number of channels: 1
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| SZESD5Z5.0T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; automotive industry
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; automotive industry
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| 1N4937RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4937G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
auf Bestellung 508 Stücke:
Lieferzeit 14-21 Tag (e)
| FDWS86368-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 74VHC74MTCX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
auf Bestellung 1935 Stücke:
Lieferzeit 14-21 Tag (e)
| 74VHC74MX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| MC74VHC74DR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74VHC74DTG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHC
Produkt ist nicht verfügbar
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| MC74VHC74DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2.2...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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