FDC634P onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.5A SUPERSOT6
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.37 EUR |
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Technische Details FDC634P onsemi
Description: MOSFET P-CH 20V 3.5A SUPERSOT6, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V.
Weitere Produktangebote FDC634P nach Preis ab 0.33 EUR bis 1.65 EUR
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FDC634P | Hersteller : onsemi / Fairchild |
MOSFETs SSOT-6 P-CH -20V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC634P | Hersteller : onsemi |
MOSFETs SSOT-6 P-CH -20V |
auf Bestellung 3437 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC634P | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.5A SUPERSOT6 Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 8720 Stücke: Lieferzeit 10-14 Tag (e) |
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