NJW0281G

Hersteller: ON Semiconductor
Trans GP BJT NPN 250V 15A 150000mW 3-Pin(3+Tab) TO-3P Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 250V 15A 150000mW 3-Pin(3+Tab) TO-3P Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 250V 15A 150000mW 3-Pin(3+Tab) TO-3P Tube

Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry

Hersteller: EVVO
Description: TRANS NPN 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W

Hersteller: onsemi
Bipolar Transistors - BJT 150W

Hersteller: onsemi
Description: TRANS NPN 250V 15A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P-3L
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W

Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 15A TO-3PB
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 0.5A, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 160 W

Hersteller: ONSEMI
Description: ONSEMI - NJW0281G - Bipolarer Einzeltransistor (BJT), Audio, NPN, 250 V, 15 A, 150 W, TO-3P, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 75hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Verlustleistung: 150W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-3P
Dauerkollektorstrom: 15A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 250V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: 30MHz
Betriebstemperatur, max.: 150°C