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1.5KE18AG 1.5KE18AG onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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TIP35A onsemi TIP35A-D.PDF Description: TRANS NPN 60V 25A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 125 W
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NC7S86L6X NC7S86L6X onsemi ONSM-S-A0003590000-1.pdf?t.download=true&u=5oefqw Description: IC GATE XOR 1CH 2-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7S86L6X NC7S86L6X onsemi ONSM-S-A0003590000-1.pdf?t.download=true&u=5oefqw Description: IC GATE XOR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7S86L6X NC7S86L6X onsemi ONSM-S-A0003590000-1.pdf?t.download=true&u=5oefqw Description: IC GATE XOR 1CH 2-INP 6MICROPAK
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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BAS16XV2T1 BAS16XV2T1 onsemi bas16xv2t1-d.pdf Description: DIODE SWITCH 200MA 75V SOD523
Packaging: Tape & Reel (TR)
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HGTP3N60A4D HGTP3N60A4D onsemi HGTP3N60A4D.pdf Description: IGBT 600V 17A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 6ns/73ns
Switching Energy: 37µJ (on), 25µJ (off)
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
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HGTP3N60A4 HGTP3N60A4 onsemi HGTD3N60A4S%2CHGTP3N60A4.pdf Description: IGBT 600V 17A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 6ns/73ns
Switching Energy: 37µJ (on), 25µJ (off)
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
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HGT1S3N60A4DS9A HGT1S3N60A4DS9A onsemi HGT1S3N60A4DS%2C%20HGTP3N60A4D.pdf Description: IGBT 600V 17A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 6ns/73ns
Switching Energy: 37µJ (on), 25µJ (off)
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
Produkt ist nicht verfügbar
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NUP4103FCT1 NUP4103FCT1 onsemi NUP4103FC.pdf Description: TVS DIODE 5.5VWM 5FLIPCHIP CSP
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 5-FlipChip CSP (1.33x0.96)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
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NCP400FCT2G onsemi ncp400-d.pdf Description: IC REG LIN 1.8V 150MA 6FLIPCHIP
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 100mA
PSRR: 50dB (1kHz)
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 6-FlipChip (1.5x1)
Number of Regulators: 1
Voltage - Input (Max): 5V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, FCBGA
Packaging: Bulk
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FDC637AN-NB5E023A onsemi FDC637AN-D.PDF Description: N-CHANNEL POWERTRENCH MOSFET, 2.
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 10 V
Produkt ist nicht verfügbar
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FDC6327C-F169 onsemi FDC6327C-D.PDF Description: DUAL N & P-CHANNEL POWERTRENCH M
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 1.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V, 170mOhm @ 1.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
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S1ZMMBZ5242BLT1 S1ZMMBZ5242BLT1 onsemi Description: DIODE ZENER .225W SPCL SOT23
Packaging: Bulk
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MMBZ5242B MMBZ5242B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 12V 350MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 8.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
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MMBZ5242B MMBZ5242B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 12V 350MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 8.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MMBZ5242BLT1 MMBZ5242BLT1 onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 12V 225MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QTLP321CR onsemi QTLP321Cx.pdf Description: LED RED POWER LED T/H
Packaging: Tube
Package / Case: 4-DIP (0.200", 5.08mm)
Color: Red
Size / Dimension: 7.62mm L x 7.62mm W
Mounting Type: Through Hole
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 70mA
Viewing Angle: 50°
Height (Max): 6.50mm
Wavelength - Peak: 640nm
Wavelength - Dominant: 630nm
Supplier Device Package: POWER LED
Lens Style: Round with Domed Top
Lens Size: 3.00mm Dia
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EC4H08C-TL-H EC4H08C-TL-H onsemi EC4H08C.pdf Description: RF TRANS NPN 3.5V 24GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17dB
Power - Max: 50mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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EC4H09C-TL-H EC4H09C-TL-H onsemi EC4H09C.pdf Description: RF TRANS NPN 3.5V 26GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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NIS5112D1R2G NIS5112D1R2G onsemi nis5112-d.pdf Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
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NB4N7132DTR2G NB4N7132DTR2G onsemi NB4N7132.pdf Description: IC CLK LINK REPLICATOR HDTV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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NB4N7132DTG NB4N7132DTG onsemi NB4N7132.pdf Description: IC CLK LINK REPLICATOR HDTV
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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NCP81611AMNTXG NCP81611AMNTXG onsemi ncp81611a-d.pdf Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
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NCP81611AMNTXG NCP81611AMNTXG onsemi ncp81611a-d.pdf Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
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NVMJD7D4N04CLTWG onsemi NVMJD7D4N04CL-D.PDF Description: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RMPA2259 RMPA2259 onsemi RMPA2259.pdf Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Tape & Reel (TR)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
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RMPA2259 RMPA2259 onsemi RMPA2259.pdf Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Cut Tape (CT)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
Produkt ist nicht verfügbar
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TIP30A TIP30A onsemi TIP29B-D.PDF Description: TRANS PNP 60V 1A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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FAN4800AUM FAN4800AUM onsemi FAN4800CU-D.pdf Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 22V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
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LM317LMX LM317LMX onsemi lm317l-d.pdf Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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LM317LMX LM317LMX onsemi lm317l-d.pdf Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TIP31 TIP31 onsemi tip31a-d.pdf Description: TRANS NPN 40V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIP31ATU TIP31ATU onsemi TIP31_A_B_C%2C%20TIP32_A_B_C.pdf Description: TRANS NPN 60V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIP122 TIP122 onsemi TIP120-22.pdf Description: TRANS NPN DARL 100V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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KSC2328AOBU KSC2328AOBU onsemi ksc2328a-d.pdf Description: TRANS NPN 30V 2A TO-92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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UJ3D1725K2 UJ3D1725K2 onsemi UJ3D1725K2-D.PDF Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 360 µA @ 1700 V
Qualification: AEC-Q101
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UJ3D1250K2 UJ3D1250K2 onsemi UJ3D1250K2-D.PDF Description: DIODE SIL CARB 1200V 50A TO247-2
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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UJ3D1205TS UJ3D1205TS onsemi UJ3D1205TS-D.PDF Description: DIODE SIL CARBIDE 1200V 5A TO220
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
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UJ3D06560KSD UJ3D06560KSD onsemi UJ3D06560KSD-D.PDF Description: DIODE SIL CARB 650V 30A TO247-3
Current - Reverse Leakage @ Vr: 740 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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UJ3D1250K UJ3D1250K onsemi UJ3D1250K-D.PDF Description: DIODE SIL CARB 1200V 50A TO247-3
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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UJ3D1202TS UJ3D1202TS onsemi UJ3D1202TS-D.PDF Description: DIODE SIL CARBIDE 1200V 2A TO220
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 109pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 22 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
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UJ3D06506TS UJ3D06506TS onsemi DS_UJ3D06506TS.pdf Description: DIODE SIL CARB 650V 6A TO220-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 196pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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UJ3D06508TS UJ3D06508TS onsemi DS_UJ3D06508TS.pdf Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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UJ3D06510TS UJ3D06510TS onsemi DS_UJ3D06510TS.pdf Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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UJ3D06520TS UJ3D06520TS onsemi DS_UJ3D06520TS.pdf Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
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UJ3D1210TS UJ3D1210TS onsemi UJ3D1210TS-D.PDF Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
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UJ3D1220KSD UJ3D1220KSD onsemi UJ3D1220KSD-D.PDF Description: DIODE SIL CARB 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
auf Bestellung 551 Stücke:
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UJ3D06504TS UJ3D06504TS onsemi DS_UJ3D06504TS.pdf Description: DIODE SIL CARB 650V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 118pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 22758 Stücke:
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UJ3D06512TS UJ3D06512TS onsemi DS_UJ3D06512TS.pdf Description: DIODE SIL CARB 650V 12A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
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UJ3D06516TS UJ3D06516TS onsemi DS_UJ3D06516TS.pdf Description: DIODE SIL CARB 650V 16A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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UJ3D1210K2 UJ3D1210K2 onsemi UJ3D1210K2-D.PDF Description: DIODE SIL CARB 1200V 10A TO247-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
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UJ3D06530TS UJ3D06530TS onsemi DS_UJ3D06530TS.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Current - Reverse Leakage @ Vr: 370 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 990pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
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UJ3D1220K2 UJ3D1220K2 onsemi da008692 Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
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UJ3D06520KSD UJ3D06520KSD onsemi UJ3D06520KSD-D.PDF Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 7418 Stücke:
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UJ3D1210KSD UJ3D1210KSD onsemi UJ3D1210KSD-D.PDF Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 98 Stücke:
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2+17.58 EUR
30+10.36 EUR
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UJ3D1210KS UJ3D1210KS onsemi UJ3D1210KS-D.PDF Description: DIODE SIL CARB 1200V 10A TO247-3
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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500+7.75 EUR
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NBXDBA009LNHTAG NBXDBA009LNHTAG onsemi Description: IC OSC XTAL DUAL FREQ 6CLCC
Current - Supply: 79 mA
Supplier Device Package: 6-CLCC (7x5)
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Type: Oscillator, Crystal
Frequency: 75MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 6-CLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MM74HC4316M MM74HC4316M onsemi MM74HC4316.pdf Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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FAN5776UCX FAN5776UCX onsemi fan5776-d.pdf Description: IC LED DRV RGLTR PWM 12WLCSP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE18AG ONSMS21119-1.pdf?t.download=true&u=5oefqw
1.5KE18AG
Hersteller: onsemi
Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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TIP35A TIP35A-D.PDF
Hersteller: onsemi
Description: TRANS NPN 60V 25A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 125 W
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NC7S86L6X ONSM-S-A0003590000-1.pdf?t.download=true&u=5oefqw
NC7S86L6X
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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NC7S86L6X ONSM-S-A0003590000-1.pdf?t.download=true&u=5oefqw
NC7S86L6X
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7S86L6X ONSM-S-A0003590000-1.pdf?t.download=true&u=5oefqw
NC7S86L6X
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP 6MICROPAK
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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BAS16XV2T1 bas16xv2t1-d.pdf
BAS16XV2T1
Hersteller: onsemi
Description: DIODE SWITCH 200MA 75V SOD523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HGTP3N60A4D HGTP3N60A4D.pdf
HGTP3N60A4D
Hersteller: onsemi
Description: IGBT 600V 17A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 6ns/73ns
Switching Energy: 37µJ (on), 25µJ (off)
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
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HGTP3N60A4 HGTD3N60A4S%2CHGTP3N60A4.pdf
HGTP3N60A4
Hersteller: onsemi
Description: IGBT 600V 17A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 6ns/73ns
Switching Energy: 37µJ (on), 25µJ (off)
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
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HGT1S3N60A4DS9A HGT1S3N60A4DS%2C%20HGTP3N60A4D.pdf
HGT1S3N60A4DS9A
Hersteller: onsemi
Description: IGBT 600V 17A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 6ns/73ns
Switching Energy: 37µJ (on), 25µJ (off)
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
Produkt ist nicht verfügbar
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NUP4103FCT1 NUP4103FC.pdf
NUP4103FCT1
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 5FLIPCHIP CSP
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 5-FlipChip CSP (1.33x0.96)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NCP400FCT2G ncp400-d.pdf
Hersteller: onsemi
Description: IC REG LIN 1.8V 150MA 6FLIPCHIP
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 100mA
PSRR: 50dB (1kHz)
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 6-FlipChip (1.5x1)
Number of Regulators: 1
Voltage - Input (Max): 5V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, FCBGA
Packaging: Bulk
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FDC637AN-NB5E023A FDC637AN-D.PDF
Hersteller: onsemi
Description: N-CHANNEL POWERTRENCH MOSFET, 2.
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 10 V
Produkt ist nicht verfügbar
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FDC6327C-F169 FDC6327C-D.PDF
Hersteller: onsemi
Description: DUAL N & P-CHANNEL POWERTRENCH M
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 1.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V, 170mOhm @ 1.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
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S1ZMMBZ5242BLT1
S1ZMMBZ5242BLT1
Hersteller: onsemi
Description: DIODE ZENER .225W SPCL SOT23
Packaging: Bulk
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11539+0.061 EUR
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MMBZ5242B MMBZ5221B-5257B.pdf
MMBZ5242B
Hersteller: onsemi
Description: DIODE ZENER 12V 350MW SOT23-3
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 8.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
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MMBZ5242B MMBZ5221B-5257B.pdf
MMBZ5242B
Hersteller: onsemi
Description: DIODE ZENER 12V 350MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 8.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MMBZ5242BLT1 mmbz5221blt1-d.pdf
MMBZ5242BLT1
Hersteller: onsemi
Description: DIODE ZENER 12V 225MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QTLP321CR QTLP321Cx.pdf
Hersteller: onsemi
Description: LED RED POWER LED T/H
Packaging: Tube
Package / Case: 4-DIP (0.200", 5.08mm)
Color: Red
Size / Dimension: 7.62mm L x 7.62mm W
Mounting Type: Through Hole
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 70mA
Viewing Angle: 50°
Height (Max): 6.50mm
Wavelength - Peak: 640nm
Wavelength - Dominant: 630nm
Supplier Device Package: POWER LED
Lens Style: Round with Domed Top
Lens Size: 3.00mm Dia
Produkt ist nicht verfügbar
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EC4H08C-TL-H EC4H08C.pdf
EC4H08C-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 3.5V 24GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17dB
Power - Max: 50mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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606+1 EUR
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EC4H09C-TL-H EC4H09C.pdf
EC4H09C-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 3.5V 26GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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NIS5112D1R2G nis5112-d.pdf
NIS5112D1R2G
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
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183+3.3 EUR
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NB4N7132DTR2G NB4N7132.pdf
NB4N7132DTR2G
Hersteller: onsemi
Description: IC CLK LINK REPLICATOR HDTV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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76+7.68 EUR
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NB4N7132DTG NB4N7132.pdf
NB4N7132DTG
Hersteller: onsemi
Description: IC CLK LINK REPLICATOR HDTV
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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NCP81611AMNTXG ncp81611a-d.pdf
NCP81611AMNTXG
Hersteller: onsemi
Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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NCP81611AMNTXG ncp81611a-d.pdf
NCP81611AMNTXG
Hersteller: onsemi
Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
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5+4.65 EUR
10+3.45 EUR
25+3.15 EUR
100+2.82 EUR
250+2.67 EUR
500+2.59 EUR
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NVMJD7D4N04CLTWG NVMJD7D4N04CL-D.PDF
Hersteller: onsemi
Description: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RMPA2259 RMPA2259.pdf
RMPA2259
Hersteller: onsemi
Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Tape & Reel (TR)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
Produkt ist nicht verfügbar
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RMPA2259 RMPA2259.pdf
RMPA2259
Hersteller: onsemi
Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Cut Tape (CT)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
Produkt ist nicht verfügbar
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TIP30A TIP29B-D.PDF
TIP30A
Hersteller: onsemi
Description: TRANS PNP 60V 1A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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FAN4800AUM FAN4800CU-D.pdf
FAN4800AUM
Hersteller: onsemi
Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 22V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
auf Bestellung 5042 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.67 EUR
11+1.94 EUR
25+1.75 EUR
100+1.56 EUR
250+1.46 EUR
500+1.4 EUR
1000+1.39 EUR
Mindestbestellmenge: 8 Stücke
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LM317LMX lm317l-d.pdf
LM317LMX
Hersteller: onsemi
Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LM317LMX lm317l-d.pdf
LM317LMX
Hersteller: onsemi
Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TIP31 tip31a-d.pdf
TIP31
Hersteller: onsemi
Description: TRANS NPN 40V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIP31ATU TIP31_A_B_C%2C%20TIP32_A_B_C.pdf
TIP31ATU
Hersteller: onsemi
Description: TRANS NPN 60V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIP122 TIP120-22.pdf
TIP122
Hersteller: onsemi
Description: TRANS NPN DARL 100V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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KSC2328AOBU ksc2328a-d.pdf
KSC2328AOBU
Hersteller: onsemi
Description: TRANS NPN 30V 2A TO-92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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UJ3D1725K2 UJ3D1725K2-D.PDF
UJ3D1725K2
Hersteller: onsemi
Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 360 µA @ 1700 V
Qualification: AEC-Q101
auf Bestellung 39527 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.01 EUR
30+23.34 EUR
120+21.13 EUR
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UJ3D1250K2 UJ3D1250K2-D.PDF
UJ3D1250K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 50A TO247-2
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
auf Bestellung 13813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+61.45 EUR
30+39.95 EUR
60+37.39 EUR
120+33.61 EUR
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UJ3D1205TS UJ3D1205TS-D.PDF
UJ3D1205TS
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1200V 5A TO220
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
auf Bestellung 16346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.63 EUR
50+6.13 EUR
100+5.6 EUR
500+4.66 EUR
1000+4.37 EUR
2000+4.16 EUR
Mindestbestellmenge: 2 Stücke
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UJ3D06560KSD UJ3D06560KSD-D.PDF
UJ3D06560KSD
Hersteller: onsemi
Description: DIODE SIL CARB 650V 30A TO247-3
Current - Reverse Leakage @ Vr: 740 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 5480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+40.65 EUR
30+25.48 EUR
60+23.67 EUR
120+22.16 EUR
510+19.9 EUR
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UJ3D1250K UJ3D1250K-D.PDF
UJ3D1250K
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 50A TO247-3
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 9373 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+61.45 EUR
30+39.95 EUR
60+37.39 EUR
120+35.62 EUR
510+33.61 EUR
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UJ3D1202TS UJ3D1202TS-D.PDF
UJ3D1202TS
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1200V 2A TO220
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 109pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 22 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 6356 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.83 EUR
10+5.14 EUR
50+3.99 EUR
100+3.62 EUR
500+2.96 EUR
Mindestbestellmenge: 3 Stücke
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UJ3D06506TS DS_UJ3D06506TS.pdf
UJ3D06506TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 6A TO220-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 196pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 57301 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
25+3.18 EUR
100+2.74 EUR
250+2.51 EUR
500+2.36 EUR
1000+2.26 EUR
Mindestbestellmenge: 6 Stücke
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UJ3D06508TS DS_UJ3D06508TS.pdf
UJ3D06508TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 28073 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.27 EUR
25+3.71 EUR
100+3.21 EUR
250+2.95 EUR
500+2.75 EUR
1000+2.67 EUR
Mindestbestellmenge: 5 Stücke
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UJ3D06510TS DS_UJ3D06510TS.pdf
UJ3D06510TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 11657 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.86 EUR
25+4.22 EUR
100+3.64 EUR
250+3.36 EUR
500+3.13 EUR
1000+3.01 EUR
Mindestbestellmenge: 5 Stücke
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UJ3D06520TS DS_UJ3D06520TS.pdf
UJ3D06520TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 6004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.33 EUR
25+7.26 EUR
100+6.25 EUR
250+5.77 EUR
500+5.37 EUR
1000+5.18 EUR
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UJ3D1210TS UJ3D1210TS-D.PDF
UJ3D1210TS
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
auf Bestellung 9913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.73 EUR
50+6.95 EUR
100+6.53 EUR
Mindestbestellmenge: 2 Stücke
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UJ3D1220KSD UJ3D1220KSD-D.PDF
UJ3D1220KSD
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
auf Bestellung 551 Stücke:
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AnzahlPrivatkunde
1+28.85 EUR
30+17.62 EUR
60+16.29 EUR
120+15.17 EUR
510+13.78 EUR
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UJ3D06504TS DS_UJ3D06504TS.pdf
UJ3D06504TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 118pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 22758 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
25+2.48 EUR
100+2.13 EUR
250+1.95 EUR
500+1.83 EUR
1000+1.76 EUR
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UJ3D06512TS DS_UJ3D06512TS.pdf
UJ3D06512TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 12A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10601 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.98 EUR
50+5.12 EUR
100+4.94 EUR
Mindestbestellmenge: 3 Stücke
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UJ3D06516TS DS_UJ3D06516TS.pdf
UJ3D06516TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 16A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.25 EUR
25+6.31 EUR
100+5.45 EUR
250+5 EUR
500+4.66 EUR
Mindestbestellmenge: 3 Stücke
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UJ3D1210K2 UJ3D1210K2-D.PDF
UJ3D1210K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO247-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
auf Bestellung 6179 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.35 EUR
30+10.73 EUR
60+9.83 EUR
120+9.07 EUR
510+7.84 EUR
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UJ3D06530TS DS_UJ3D06530TS.pdf
UJ3D06530TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 30A TO220-2
Current - Reverse Leakage @ Vr: 370 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 990pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
auf Bestellung 7715 Stücke:
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2+12.17 EUR
25+10.59 EUR
100+9.14 EUR
250+8.41 EUR
500+7.84 EUR
1000+7.56 EUR
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UJ3D1220K2 da008692
UJ3D1220K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
auf Bestellung 297 Stücke:
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2+15.79 EUR
25+13.72 EUR
100+11.85 EUR
250+10.91 EUR
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UJ3D06520KSD UJ3D06520KSD-D.PDF
UJ3D06520KSD
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 7418 Stücke:
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2+16.53 EUR
30+9.08 EUR
120+8.21 EUR
510+7.4 EUR
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UJ3D1210KSD UJ3D1210KSD-D.PDF
UJ3D1210KSD
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 98 Stücke:
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2+17.58 EUR
30+10.36 EUR
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UJ3D1210KS UJ3D1210KS-D.PDF
UJ3D1210KS
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO247-3
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6588 Stücke:
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AnzahlPrivatkunde
2+17.99 EUR
10+12.32 EUR
50+9.89 EUR
100+9.12 EUR
500+7.75 EUR
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NBXDBA009LNHTAG
NBXDBA009LNHTAG
Hersteller: onsemi
Description: IC OSC XTAL DUAL FREQ 6CLCC
Current - Supply: 79 mA
Supplier Device Package: 6-CLCC (7x5)
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Type: Oscillator, Crystal
Frequency: 75MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 6-CLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MM74HC4316M MM74HC4316.pdf
MM74HC4316M
Hersteller: onsemi
Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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FAN5776UCX fan5776-d.pdf
FAN5776UCX
Hersteller: onsemi
Description: IC LED DRV RGLTR PWM 12WLCSP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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