Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (142578) > Seite 1207 nach 2377

Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1202 1203 1204 1205 1206 1207 1208 1209 1210 1211 1212 1422 1659 1896 2133 2370 2377  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SPS9386QRLRP SPS9386QRLRP onsemi Description: SS T092 GP XSTR NPN SPCL
Packaging: Bulk
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5323+0.095 EUR
Mindestbestellmenge: 5323
Im Einkaufswagen  Stück im Wert von  UAH
SPS9370 SPS9370 onsemi Description: SS T092 GP XSTR NPN SPCL
Packaging: Bulk
auf Bestellung 115000 Stücke:
Lieferzeit 10-14 Tag (e)
4438+0.11 EUR
Mindestbestellmenge: 4438
Im Einkaufswagen  Stück im Wert von  UAH
TG00721 onsemi Description: SS TO39 GP NPN XSTR
Packaging: Bulk
auf Bestellung 44506 Stücke:
Lieferzeit 10-14 Tag (e)
2184+0.21 EUR
Mindestbestellmenge: 2184
Im Einkaufswagen  Stück im Wert von  UAH
SPS3609RLRA SPS3609RLRA onsemi Description: SS T092 GP XSTR NPN SPCL
Packaging: Bulk
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
919+0.52 EUR
Mindestbestellmenge: 919
Im Einkaufswagen  Stück im Wert von  UAH
TIP117TU TIP117TU onsemi TIP115-17.pdf Description: TRANS PNP DARL 100V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS8151MUTBG onsemi Description: TVS DIODE 15VRWM
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS8151MUTBG onsemi Description: TVS DIODE 15VRWM
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS8151MUTBG onsemi Description: TVS DIODE 15VRWM
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1396+0.33 EUR
Mindestbestellmenge: 1396
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD027N10MCLT1G NVMFD027N10MCLT1G onsemi nvmfd027n10mcl-d.pdf Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.99 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD027N10MCLT1G NVMFD027N10MCLT1G onsemi nvmfd027n10mcl-d.pdf Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2777 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.29 EUR
10+2.1 EUR
100+1.42 EUR
500+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS027N10MCLTWG NVTYS027N10MCLTWG onsemi nvtys027n10mcl-d.pdf Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS027N10MCLTWG NVTYS027N10MCLTWG onsemi nvtys027n10mcl-d.pdf Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJD027N10MCLTWG NVMJD027N10MCLTWG onsemi nvmjd027n10mcl-d.pdf Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJD027N10MCLTWG NVMJD027N10MCLTWG onsemi nvmjd027n10mcl-d.pdf Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP8030L FDP8030L onsemi fdp8030l-d.pdf Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
auf Bestellung 1023 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.82 EUR
10+8.41 EUR
100+7.01 EUR
500+6.19 EUR
1000+5.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDP8030L FDP8030L onsemi fdp8030l-d.pdf Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N80TU FQI4N80TU onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDC3105LT1G NDC3105LT1G onsemi Description: IC PWR DRIVER SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
auf Bestellung 740100 Stücke:
Lieferzeit 10-14 Tag (e)
1649+0.3 EUR
Mindestbestellmenge: 1649
Im Einkaufswagen  Stück im Wert von  UAH
CNY17F2M CNY17F2M onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 184097 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
50+0.53 EUR
100+0.47 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.32 EUR
5000+0.3 EUR
10000+0.28 EUR
25000+0.27 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
STK984-091A-E STK984-091A-E onsemi Description: MOD INVERTER 3PHASE AUTO
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHD4508NT1G NTHD4508NT1G onsemi nthd4508n-d.pdf Description: MOSFET 2N-CH 20V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
auf Bestellung 17635 Stücke:
Lieferzeit 10-14 Tag (e)
594+0.82 EUR
Mindestbestellmenge: 594
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT2G NVJD5121NT2G onsemi ntjd5121n-d.pdf Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT2G NVJD5121NT2G onsemi ntjd5121n-d.pdf Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2841 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
57+0.31 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
GBU8KS GBU8KS onsemi gbu8ks-d.pdf Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1548 Stücke:
Lieferzeit 10-14 Tag (e)
5+4 EUR
20+2.16 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SBH15-03-TR-E onsemi Description: DIODE SCHOTTKY 1.5A 30V
Packaging: Bulk
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
1902+0.25 EUR
Mindestbestellmenge: 1902
Im Einkaufswagen  Stück im Wert von  UAH
NTHD5905T1 NTHD5905T1 onsemi NTHD5905T1-D.pdf Description: MOSFET 2P-CH 8V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: ChipFET™
auf Bestellung 408000 Stücke:
Lieferzeit 10-14 Tag (e)
1902+0.25 EUR
Mindestbestellmenge: 1902
Im Einkaufswagen  Stück im Wert von  UAH
NTJD2152PT2G NTJD2152PT2G onsemi ntjd2152p-d.pdf Description: MOSFET 2P-CH 8V 0.775A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 775mA
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Rds On (Max) @ Id, Vgs: 300mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C470NWFT1G NVMFD5C470NWFT1G onsemi nvmfd5c470n-d.pdf Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C470NWFT1G NVMFD5C470NWFT1G onsemi nvmfd5c470n-d.pdf Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
10+2.48 EUR
100+1.7 EUR
500+1.36 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
74F675APC 74F675APC onsemi 74F675A.pdf Description: IC REG SER-IN SER-PAR OUT 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676SCX 74F676SCX onsemi 74F676.pdf Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676PC 74F676PC onsemi 74F676.pdf Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676SPC 74F676SPC onsemi 74F676.pdf Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676SC 74F676SC onsemi 74F676.pdf Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM7915CT LM7915CT onsemi LM79xx_Rev2011.pdf Description: IC REG LINEAR -15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -15V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTF3055-160T1 NTF3055-160T1 onsemi ntf3055-160-d.pdf Description: MOSFET N-CH 60V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 8546 Stücke:
Lieferzeit 10-14 Tag (e)
2019+0.23 EUR
Mindestbestellmenge: 2019
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ33VALT1 MMBZ33VALT1 onsemi mmbz5v6alt1-d.pdf Description: TVS ZENER DUAL CA 40W 33V SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMQA2000T1G onsemi Description: TVS DIODE
Packaging: Bulk
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
1SMC70AT3 1SMC70AT3 onsemi 1SMC5.0AT3%20Series.pdf Description: TVS 1500W 70V UNIDIRECT SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMC70AT3 1SMC70AT3 onsemi 1SMC5.0AT3%20Series.pdf Description: TVS 1500W 70V UNIDIRECT SMC
Packaging: Bulk
auf Bestellung 2373 Stücke:
Lieferzeit 10-14 Tag (e)
1665+0.3 EUR
Mindestbestellmenge: 1665
Im Einkaufswagen  Stück im Wert von  UAH
MPTE-018 MPTE-018 onsemi Description: DIODE TVS SINGLE UNI-DIR 18V 1.5
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
1567+0.32 EUR
Mindestbestellmenge: 1567
Im Einkaufswagen  Stück im Wert von  UAH
2N5323 2N5323 onsemi 2N5, FTSO5, MPS5.pdf Description: TRANS PNP 50V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 4V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N5322 2N5322 onsemi 2N5, FTSO5, MPS5.pdf Description: TRANS PNP 75V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N5320 2N5320 onsemi 2N5%2C%20FTSO5%2C%20MPS5.pdf Description: TRANS NPN 75V 2A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA79M05TU KA79M05TU onsemi FAIR-S-A0000012695-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR -5V 500MA TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.1V @ 500mA
Protection Features: Over Temperature, Short Circuit
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
534+0.85 EUR
Mindestbestellmenge: 534
Im Einkaufswagen  Stück im Wert von  UAH
TIP47 TIP47 onsemi TIP47-50.pdf Description: TRANS NPN 250V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP48TU TIP48TU onsemi tip50-d.pdf Description: TRANS NPN 300V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVXK2VR40WXT2 NVXK2VR40WXT2 onsemi nvxk2vr40wxt2-d.pdf Description: MOSFET 6N-CH 1200V 55A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.449", 36.80mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
1+135.68 EUR
10+111.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NCP1343ENAAEBBD1R2G NCP1343ENAAEBBD1R2G onsemi ncp1343-d.pdf Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
10+1.93 EUR
25+1.83 EUR
100+1.41 EUR
250+1.24 EUR
500+1.18 EUR
1000+0.92 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
1SMC26AT3 1SMC26AT3 onsemi 1_SZ1_SMCxxAT3G_Series.pdf Description: TVS DIODE 26V 42.1V SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN302HLMY FAN302HLMY onsemi FAN302HL.pdf Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1417TU KSD1417TU onsemi Description: TRANS NPN DARL 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSCT2222ALT3G NSCT2222ALT3G onsemi NSCT2222ALT1G.pdf Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
LM2931CT LM2931CT onsemi lm2931-d.pdf Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTD6415AN-1G NTD6415AN-1G onsemi ntd6415an-d.pdf Description: MOSFET N-CH 100V 23A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
750+0.83 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
MPS8099 onsemi mps8098-d.pdf Description: TRANSISTOR NPN GP BIPO 80V TO-92
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR405G MUR405G onsemi mur420-d.pdf Description: DIODE GEN PURP 50V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1464 Stücke:
Lieferzeit 10-14 Tag (e)
1464+0.33 EUR
Mindestbestellmenge: 1464
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6B14NLT3G NVMFS6B14NLT3G onsemi Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA75330ZTA KA75330ZTA onsemi ka75330z-d.pdf Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -25°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: TO-92-3
DigiKey Programmable: Not Verified
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
2273+0.2 EUR
Mindestbestellmenge: 2273
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS005P03P8ZST1G NTMFS005P03P8ZST1G onsemi ntmfs005p03p8z-d.pdf Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPS9386QRLRP
SPS9386QRLRP
Hersteller: onsemi
Description: SS T092 GP XSTR NPN SPCL
Packaging: Bulk
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5323+0.095 EUR
Mindestbestellmenge: 5323
Im Einkaufswagen  Stück im Wert von  UAH
SPS9370
SPS9370
Hersteller: onsemi
Description: SS T092 GP XSTR NPN SPCL
Packaging: Bulk
auf Bestellung 115000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4438+0.11 EUR
Mindestbestellmenge: 4438
Im Einkaufswagen  Stück im Wert von  UAH
TG00721
Hersteller: onsemi
Description: SS TO39 GP NPN XSTR
Packaging: Bulk
auf Bestellung 44506 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2184+0.21 EUR
Mindestbestellmenge: 2184
Im Einkaufswagen  Stück im Wert von  UAH
SPS3609RLRA
SPS3609RLRA
Hersteller: onsemi
Description: SS T092 GP XSTR NPN SPCL
Packaging: Bulk
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
919+0.52 EUR
Mindestbestellmenge: 919
Im Einkaufswagen  Stück im Wert von  UAH
TIP117TU TIP115-17.pdf
TIP117TU
Hersteller: onsemi
Description: TRANS PNP DARL 100V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS8151MUTBG
Hersteller: onsemi
Description: TVS DIODE 15VRWM
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS8151MUTBG
Hersteller: onsemi
Description: TVS DIODE 15VRWM
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS8151MUTBG
Hersteller: onsemi
Description: TVS DIODE 15VRWM
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1396+0.33 EUR
Mindestbestellmenge: 1396
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD027N10MCLT1G nvmfd027n10mcl-d.pdf
NVMFD027N10MCLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.99 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD027N10MCLT1G nvmfd027n10mcl-d.pdf
NVMFD027N10MCLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.1 EUR
100+1.42 EUR
500+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS027N10MCLTWG nvtys027n10mcl-d.pdf
NVTYS027N10MCLTWG
Hersteller: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS027N10MCLTWG nvtys027n10mcl-d.pdf
NVTYS027N10MCLTWG
Hersteller: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJD027N10MCLTWG nvmjd027n10mcl-d.pdf
NVMJD027N10MCLTWG
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJD027N10MCLTWG nvmjd027n10mcl-d.pdf
NVMJD027N10MCLTWG
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP8030L fdp8030l-d.pdf
FDP8030L
Hersteller: onsemi
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
auf Bestellung 1023 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.82 EUR
10+8.41 EUR
100+7.01 EUR
500+6.19 EUR
1000+5.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDP8030L fdp8030l-d.pdf
FDP8030L
Hersteller: onsemi
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N80TU fqi4n80-d.pdf
FQI4N80TU
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDC3105LT1G
NDC3105LT1G
Hersteller: onsemi
Description: IC PWR DRIVER SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
auf Bestellung 740100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1649+0.3 EUR
Mindestbestellmenge: 1649
Im Einkaufswagen  Stück im Wert von  UAH
CNY17F2M cny17f4m-d.pdf
CNY17F2M
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 184097 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
50+0.53 EUR
100+0.47 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.32 EUR
5000+0.3 EUR
10000+0.28 EUR
25000+0.27 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
STK984-091A-E
STK984-091A-E
Hersteller: onsemi
Description: MOD INVERTER 3PHASE AUTO
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHD4508NT1G nthd4508n-d.pdf
NTHD4508NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
auf Bestellung 17635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
594+0.82 EUR
Mindestbestellmenge: 594
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT2G ntjd5121n-d.pdf
NVJD5121NT2G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT2G ntjd5121n-d.pdf
NVJD5121NT2G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
GBU8KS gbu8ks-d.pdf
GBU8KS
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1548 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4 EUR
20+2.16 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SBH15-03-TR-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 1.5A 30V
Packaging: Bulk
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1902+0.25 EUR
Mindestbestellmenge: 1902
Im Einkaufswagen  Stück im Wert von  UAH
NTHD5905T1 NTHD5905T1-D.pdf
NTHD5905T1
Hersteller: onsemi
Description: MOSFET 2P-CH 8V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: ChipFET™
auf Bestellung 408000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1902+0.25 EUR
Mindestbestellmenge: 1902
Im Einkaufswagen  Stück im Wert von  UAH
NTJD2152PT2G ntjd2152p-d.pdf
NTJD2152PT2G
Hersteller: onsemi
Description: MOSFET 2P-CH 8V 0.775A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 775mA
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Rds On (Max) @ Id, Vgs: 300mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C470NWFT1G nvmfd5c470n-d.pdf
NVMFD5C470NWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C470NWFT1G nvmfd5c470n-d.pdf
NVMFD5C470NWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.48 EUR
100+1.7 EUR
500+1.36 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
74F675APC 74F675A.pdf
74F675APC
Hersteller: onsemi
Description: IC REG SER-IN SER-PAR OUT 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676SCX 74F676.pdf
74F676SCX
Hersteller: onsemi
Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676PC 74F676.pdf
74F676PC
Hersteller: onsemi
Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676SPC 74F676.pdf
74F676SPC
Hersteller: onsemi
Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74F676SC 74F676.pdf
74F676SC
Hersteller: onsemi
Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM7915CT LM79xx_Rev2011.pdf
LM7915CT
Hersteller: onsemi
Description: IC REG LINEAR -15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -15V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTF3055-160T1 ntf3055-160-d.pdf
NTF3055-160T1
Hersteller: onsemi
Description: MOSFET N-CH 60V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 8546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2019+0.23 EUR
Mindestbestellmenge: 2019
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ33VALT1 mmbz5v6alt1-d.pdf
MMBZ33VALT1
Hersteller: onsemi
Description: TVS ZENER DUAL CA 40W 33V SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMQA2000T1G
Hersteller: onsemi
Description: TVS DIODE
Packaging: Bulk
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
1SMC70AT3 1SMC5.0AT3%20Series.pdf
1SMC70AT3
Hersteller: onsemi
Description: TVS 1500W 70V UNIDIRECT SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMC70AT3 1SMC5.0AT3%20Series.pdf
1SMC70AT3
Hersteller: onsemi
Description: TVS 1500W 70V UNIDIRECT SMC
Packaging: Bulk
auf Bestellung 2373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1665+0.3 EUR
Mindestbestellmenge: 1665
Im Einkaufswagen  Stück im Wert von  UAH
MPTE-018
MPTE-018
Hersteller: onsemi
Description: DIODE TVS SINGLE UNI-DIR 18V 1.5
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1567+0.32 EUR
Mindestbestellmenge: 1567
Im Einkaufswagen  Stück im Wert von  UAH
2N5323 2N5, FTSO5, MPS5.pdf
2N5323
Hersteller: onsemi
Description: TRANS PNP 50V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 4V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N5322 2N5, FTSO5, MPS5.pdf
2N5322
Hersteller: onsemi
Description: TRANS PNP 75V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N5320 2N5%2C%20FTSO5%2C%20MPS5.pdf
2N5320
Hersteller: onsemi
Description: TRANS NPN 75V 2A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA79M05TU FAIR-S-A0000012695-1.pdf?t.download=true&u=5oefqw
KA79M05TU
Hersteller: onsemi
Description: IC REG LINEAR -5V 500MA TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.1V @ 500mA
Protection Features: Over Temperature, Short Circuit
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
534+0.85 EUR
Mindestbestellmenge: 534
Im Einkaufswagen  Stück im Wert von  UAH
TIP47 TIP47-50.pdf
TIP47
Hersteller: onsemi
Description: TRANS NPN 250V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP48TU tip50-d.pdf
TIP48TU
Hersteller: onsemi
Description: TRANS NPN 300V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVXK2VR40WXT2 nvxk2vr40wxt2-d.pdf
NVXK2VR40WXT2
Hersteller: onsemi
Description: MOSFET 6N-CH 1200V 55A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.449", 36.80mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+135.68 EUR
10+111.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NCP1343ENAAEBBD1R2G ncp1343-d.pdf
NCP1343ENAAEBBD1R2G
Hersteller: onsemi
Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
10+1.93 EUR
25+1.83 EUR
100+1.41 EUR
250+1.24 EUR
500+1.18 EUR
1000+0.92 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
1SMC26AT3 1_SZ1_SMCxxAT3G_Series.pdf
1SMC26AT3
Hersteller: onsemi
Description: TVS DIODE 26V 42.1V SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN302HLMY FAN302HL.pdf
FAN302HLMY
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1417TU
KSD1417TU
Hersteller: onsemi
Description: TRANS NPN DARL 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSCT2222ALT3G NSCT2222ALT1G.pdf
NSCT2222ALT3G
Hersteller: onsemi
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
LM2931CT lm2931-d.pdf
LM2931CT
Hersteller: onsemi
Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTD6415AN-1G ntd6415an-d.pdf
NTD6415AN-1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 23A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.83 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
MPS8099 mps8098-d.pdf
Hersteller: onsemi
Description: TRANSISTOR NPN GP BIPO 80V TO-92
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR405G mur420-d.pdf
MUR405G
Hersteller: onsemi
Description: DIODE GEN PURP 50V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1464+0.33 EUR
Mindestbestellmenge: 1464
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6B14NLT3G
NVMFS6B14NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA75330ZTA ka75330z-d.pdf
KA75330ZTA
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -25°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: TO-92-3
DigiKey Programmable: Not Verified
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2273+0.2 EUR
Mindestbestellmenge: 2273
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS005P03P8ZST1G ntmfs005p03p8z-d.pdf
NTMFS005P03P8ZST1G
Hersteller: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1202 1203 1204 1205 1206 1207 1208 1209 1210 1211 1212 1422 1659 1896 2133 2370 2377  [ Nächste Seite >> ]