Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (147030) > Seite 1202 nach 2451

Wählen Sie Seite:   [  << Vorherige Seite ]  1 245 490 735 980 1197 1198 1199 1200 1201 1202 1203 1204 1205 1206 1207 1225 1470 1715 1960 2205 2450 2451  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PN3643 PN3643 onsemi PN3643.pdf Description: TRANS NPN 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PN3646 PN3646 onsemi PN3646.pdf Description: TRANS NPN 15V 0.3A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 3mA, 300mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10ELT28DG MC10ELT28DG onsemi Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential, Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL, PECL
Translator Type: Mixed Signal
Channels per Circuit: 2
Input Signal: PECL, TTL
Number of Circuits: 1
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
83+5.88 EUR
Mindestbestellmenge: 83
Im Einkaufswagen  Stück im Wert von  UAH
EGP10K EGP10K onsemi ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10K EGP10K onsemi ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B-F085 FFSB0665B-F085 onsemi ffsb0665b-f085-d.pdf Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.48 EUR
1600+2.38 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B-F085 FFSB0665B-F085 onsemi ffsb0665b-f085-d.pdf Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 7944 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.90 EUR
10+4.54 EUR
100+3.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B FFSB0665B onsemi ffsb0665b-d.pdf Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B FFSB0665B onsemi ffsb0665b-d.pdf Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+3.10 EUR
100+2.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G08DFT1 MC74HC1G08DFT1 onsemi mc74hc1g08-d.pdf Description: IC GATE AND 1CH 2-INP SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 83960 Stücke:
Lieferzeit 10-14 Tag (e)
5323+0.10 EUR
Mindestbestellmenge: 5323
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G08DBVT1G-Q MC74HC1G08DBVT1G-Q onsemi mc74hc1g08-d.pdf Description: SINGLE 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.09 EUR
6000+0.08 EUR
9000+0.08 EUR
15000+0.08 EUR
21000+0.07 EUR
30000+0.07 EUR
75000+0.06 EUR
150000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G08DBVT1G-Q MC74HC1G08DBVT1G-Q onsemi mc74hc1g08-d.pdf Description: SINGLE 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
60+0.29 EUR
75+0.24 EUR
102+0.17 EUR
250+0.14 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
NS3L500MTTWG NS3L500MTTWG onsemi ns3l500-d.pdf Description: IC ETH LAN SW 2:1GB 8CH 56-WQFN
Features: 10/100/1000 Base-T, LAN, LED
Packaging: Bulk
Package / Case: 56-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Networking
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 56-WQFN (5x11)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
auf Bestellung 431751 Stücke:
Lieferzeit 10-14 Tag (e)
221+2.10 EUR
Mindestbestellmenge: 221
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP160SFT3G NRVHP160SFT3G onsemi nhp160sf-d.pdf Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP160SFT3G NRVHP160SFT3G onsemi nhp160sf-d.pdf Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 9996 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
32+0.56 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.28 EUR
2000+0.27 EUR
5000+0.24 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NRVB140ESFT3G NRVB140ESFT3G onsemi mbr140esf-d.pdf Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.21 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
NRVB140ESFT3G NRVB140ESFT3G onsemi mbr140esf-d.pdf Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 19780 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+0.57 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.25 EUR
2000+0.24 EUR
5000+0.23 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
NRVB140SFT3G NRVB140SFT3G onsemi mbr140sft1-d.pdf Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
1N4752A 1N4752A onsemi 1N4736AT-D.PDF Description: DIODE ZENER 33V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
auf Bestellung 2473 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
96+0.18 EUR
209+0.08 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5V1T3G MMSZ5V1T3G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 539500 Stücke:
Lieferzeit 10-14 Tag (e)
6662+0.08 EUR
Mindestbestellmenge: 6662
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5V1ET1 MMSZ5V1ET1 onsemi mmsz2v4et1-d.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
5975+0.08 EUR
Mindestbestellmenge: 5975
Im Einkaufswagen  Stück im Wert von  UAH
NLV74HC4020ADTR2G NLV74HC4020ADTR2G onsemi ONSMS39177-1.pdf?t.download=true&u=5oefqw Description: NLV74HC4020 - 14-STAGE BINARY RI
Packaging: Bulk
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
483+1.04 EUR
Mindestbestellmenge: 483
Im Einkaufswagen  Stück im Wert von  UAH
FPF2G120BF07ASP onsemi FPF2G120BF07ASP-D.pdf Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FPF2G120BF07AS FPF2G120BF07AS onsemi TND6237-D.PDF Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
1+157.70 EUR
10+142.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FPF1C2P5BF07A FPF1C2P5BF07A onsemi ONSM-S-A0003587275-1.pdf?t.download=true&u=5oefqw Description: MOSFET 5N-CH 650V 36A F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: F1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LC75812PTS-8565-H LC75812PTS-8565-H onsemi Description: IC DRVR DOT MATRIX 100TQFP
Packaging: Bulk
Package / Case: 100-TQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits
Supplier Device Package: 100-TQFP (14x14)
Current - Supply: 500 µA
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
105+4.68 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5258BLT1G SZMMBZ5258BLT1G onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 36V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
auf Bestellung 72728 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
71+0.25 EUR
173+0.10 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5258BLT1 MMBZ5258BLT1 onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 36V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
9458+0.05 EUR
Mindestbestellmenge: 9458
Im Einkaufswagen  Stück im Wert von  UAH
FJV1845EMTF FJV1845EMTF onsemi FJV1845.pdf Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJV1845EMTF FJV1845EMTF onsemi FJV1845.pdf Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FEP16BTA FEP16BTA onsemi FEP16AT.pdf Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4730A 1N4730A onsemi 1N4728A-58A.pdf Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF1300N80ZYD FCPF1300N80ZYD onsemi fcpf1300n80z-d.pdf Description: MOSFET N-CH 800V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3L1 FCPF165N65S3L1 onsemi fcpf165n65s3l1-d.pdf Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 34060 Stücke:
Lieferzeit 10-14 Tag (e)
237+2.13 EUR
Mindestbestellmenge: 237
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3R0L FCPF165N65S3R0L onsemi fcpf165n65s3r0l-d.pdf Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 2655 Stücke:
Lieferzeit 10-14 Tag (e)
221+2.28 EUR
Mindestbestellmenge: 221
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3R0L FCPF165N65S3R0L onsemi fcpf165n65s3r0l-d.pdf Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TT1 BAS16TT1 onsemi bas16tt1-d.pdf Description: DIODE SS SW 75V 200MA SC-75
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXH100T120L3Q0S1NG onsemi nxh100t120l3q0s1ng-d.pdf Description: 1200V GEN III Q0PACK WITH NI-PLA
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 122 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
1+98.42 EUR
24+89.47 EUR
48+86.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH011F120M3F2PTHG NXH011F120M3F2PTHG onsemi nxh011f120m3f2pt-d.pdf Description: MOSFET 4N-CH 1200V 105A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 244W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
1+177.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH007F120M3F2PTHG NXH007F120M3F2PTHG onsemi nxh007f120m3f2-d.pdf Description: MOSFET 4N-CH 1200V 149A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
1+241.65 EUR
20+235.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH004P120M3F2PTNG NXH004P120M3F2PTNG onsemi nxh004p120m3f2ptng-d.pdf Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
1+304.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH004P120M3F2PNG NXH004P120M3F2PNG onsemi nxh004p120m3f2png-d.pdf Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+322.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SG1577ASY SG1577ASY onsemi Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RD0504T-P-TL-H RD0504T-P-TL-H onsemi Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
auf Bestellung 31500 Stücke:
Lieferzeit 10-14 Tag (e)
650+0.78 EUR
Mindestbestellmenge: 650
Im Einkaufswagen  Stück im Wert von  UAH
RD0506LS-SB-1H RD0506LS-SB-1H onsemi Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4649 Stücke:
Lieferzeit 10-14 Tag (e)
567+0.89 EUR
Mindestbestellmenge: 567
Im Einkaufswagen  Stück im Wert von  UAH
MUN5136DW1T1G MUN5136DW1T1G onsemi DTA115ED-D.PDF Description: MUN5136 - DUAL BIAS RESISTOR TRA
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
8663+0.05 EUR
Mindestbestellmenge: 8663
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121P MC10H121P onsemi MC10H121-D.pdf Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121M MC10H121M onsemi MC10H121-D.pdf Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121FNR2 MC10H121FNR2 onsemi MC10H121-D.pdf Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121FNR2G MC10H121FNR2G onsemi MC10H121-D.pdf Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H124P MC10H124P onsemi Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H125L MC10H125L onsemi Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NIV3071MTW4TWG NIV3071MTW4TWG onsemi nis3071-d.pdf Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+4.84 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
NIV3071MTW4TWG NIV3071MTW4TWG onsemi nis3071-d.pdf Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
auf Bestellung 23165 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.40 EUR
10+7.82 EUR
100+6.04 EUR
500+5.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBG045N065SC1 NTBG045N065SC1 onsemi ntbg045n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+11.60 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG045N065SC1 NTBG045N065SC1 onsemi ntbg045n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
auf Bestellung 4216 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.95 EUR
10+16.07 EUR
100+12.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG045N065SC1 NVBG045N065SC1 onsemi nvbg045n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVBG045N065SC1 NVBG045N065SC1 onsemi nvbg045n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.24 EUR
10+24.00 EUR
100+20.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NCV8768CD33ABR2G NCV8768CD33ABR2G onsemi NCV8768C.PDF Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.17 EUR
5000+1.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NCV8768CD33ABR2G NCV8768CD33ABR2G onsemi NCV8768C.PDF Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+2.66 EUR
25+2.25 EUR
100+1.79 EUR
250+1.56 EUR
500+1.42 EUR
1000+1.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PN3643 PN3643.pdf
PN3643
Hersteller: onsemi
Description: TRANS NPN 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PN3646 PN3646.pdf
PN3646
Hersteller: onsemi
Description: TRANS NPN 15V 0.3A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 3mA, 300mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10ELT28DG
MC10ELT28DG
Hersteller: onsemi
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential, Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL, PECL
Translator Type: Mixed Signal
Channels per Circuit: 2
Input Signal: PECL, TTL
Number of Circuits: 1
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
83+5.88 EUR
Mindestbestellmenge: 83
Im Einkaufswagen  Stück im Wert von  UAH
EGP10K ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw
EGP10K
Hersteller: onsemi
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP10K ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw
EGP10K
Hersteller: onsemi
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B-F085 ffsb0665b-f085-d.pdf
FFSB0665B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.48 EUR
1600+2.38 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B-F085 ffsb0665b-f085-d.pdf
FFSB0665B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 7944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.90 EUR
10+4.54 EUR
100+3.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B ffsb0665b-d.pdf
FFSB0665B
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSB0665B ffsb0665b-d.pdf
FFSB0665B
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+3.10 EUR
100+2.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G08DFT1 mc74hc1g08-d.pdf
MC74HC1G08DFT1
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 83960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5323+0.10 EUR
Mindestbestellmenge: 5323
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G08DBVT1G-Q mc74hc1g08-d.pdf
MC74HC1G08DBVT1G-Q
Hersteller: onsemi
Description: SINGLE 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.08 EUR
15000+0.08 EUR
21000+0.07 EUR
30000+0.07 EUR
75000+0.06 EUR
150000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G08DBVT1G-Q mc74hc1g08-d.pdf
MC74HC1G08DBVT1G-Q
Hersteller: onsemi
Description: SINGLE 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
60+0.29 EUR
75+0.24 EUR
102+0.17 EUR
250+0.14 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
NS3L500MTTWG ns3l500-d.pdf
NS3L500MTTWG
Hersteller: onsemi
Description: IC ETH LAN SW 2:1GB 8CH 56-WQFN
Features: 10/100/1000 Base-T, LAN, LED
Packaging: Bulk
Package / Case: 56-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Networking
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 56-WQFN (5x11)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
auf Bestellung 431751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.10 EUR
Mindestbestellmenge: 221
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP160SFT3G nhp160sf-d.pdf
NRVHP160SFT3G
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP160SFT3G nhp160sf-d.pdf
NRVHP160SFT3G
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 9996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
32+0.56 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.28 EUR
2000+0.27 EUR
5000+0.24 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NRVB140ESFT3G mbr140esf-d.pdf
NRVB140ESFT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.21 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
NRVB140ESFT3G mbr140esf-d.pdf
NRVB140ESFT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 19780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
31+0.57 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.25 EUR
2000+0.24 EUR
5000+0.23 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
NRVB140SFT3G mbr140sft1-d.pdf
NRVB140SFT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
1N4752A 1N4736AT-D.PDF
1N4752A
Hersteller: onsemi
Description: DIODE ZENER 33V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
auf Bestellung 2473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
96+0.18 EUR
209+0.08 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5V1T3G mmsz2v4t1-d.pdf
MMSZ5V1T3G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 539500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6662+0.08 EUR
Mindestbestellmenge: 6662
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5V1ET1 mmsz2v4et1-d.pdf
MMSZ5V1ET1
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5975+0.08 EUR
Mindestbestellmenge: 5975
Im Einkaufswagen  Stück im Wert von  UAH
NLV74HC4020ADTR2G ONSMS39177-1.pdf?t.download=true&u=5oefqw
NLV74HC4020ADTR2G
Hersteller: onsemi
Description: NLV74HC4020 - 14-STAGE BINARY RI
Packaging: Bulk
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
483+1.04 EUR
Mindestbestellmenge: 483
Im Einkaufswagen  Stück im Wert von  UAH
FPF2G120BF07ASP FPF2G120BF07ASP-D.pdf
Hersteller: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FPF2G120BF07AS TND6237-D.PDF
FPF2G120BF07AS
Hersteller: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+157.70 EUR
10+142.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FPF1C2P5BF07A ONSM-S-A0003587275-1.pdf?t.download=true&u=5oefqw
FPF1C2P5BF07A
Hersteller: onsemi
Description: MOSFET 5N-CH 650V 36A F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: F1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LC75812PTS-8565-H
LC75812PTS-8565-H
Hersteller: onsemi
Description: IC DRVR DOT MATRIX 100TQFP
Packaging: Bulk
Package / Case: 100-TQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits
Supplier Device Package: 100-TQFP (14x14)
Current - Supply: 500 µA
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
105+4.68 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5258BLT1G mmbz5221blt1-d.pdf
SZMMBZ5258BLT1G
Hersteller: onsemi
Description: DIODE ZENER 36V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
auf Bestellung 72728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
71+0.25 EUR
173+0.10 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5258BLT1 mmbz5221blt1-d.pdf
MMBZ5258BLT1
Hersteller: onsemi
Description: DIODE ZENER 36V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9458+0.05 EUR
Mindestbestellmenge: 9458
Im Einkaufswagen  Stück im Wert von  UAH
FJV1845EMTF FJV1845.pdf
FJV1845EMTF
Hersteller: onsemi
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJV1845EMTF FJV1845.pdf
FJV1845EMTF
Hersteller: onsemi
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FEP16BTA FEP16AT.pdf
FEP16BTA
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4730A 1N4728A-58A.pdf
1N4730A
Hersteller: onsemi
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF1300N80ZYD fcpf1300n80z-d.pdf
FCPF1300N80ZYD
Hersteller: onsemi
Description: MOSFET N-CH 800V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3L1 fcpf165n65s3l1-d.pdf
FCPF165N65S3L1
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 34060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
237+2.13 EUR
Mindestbestellmenge: 237
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3R0L fcpf165n65s3r0l-d.pdf
FCPF165N65S3R0L
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 2655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.28 EUR
Mindestbestellmenge: 221
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3R0L fcpf165n65s3r0l-d.pdf
FCPF165N65S3R0L
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TT1 bas16tt1-d.pdf
BAS16TT1
Hersteller: onsemi
Description: DIODE SS SW 75V 200MA SC-75
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXH100T120L3Q0S1NG nxh100t120l3q0s1ng-d.pdf
Hersteller: onsemi
Description: 1200V GEN III Q0PACK WITH NI-PLA
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 122 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+98.42 EUR
24+89.47 EUR
48+86.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH011F120M3F2PTHG nxh011f120m3f2pt-d.pdf
NXH011F120M3F2PTHG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 105A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 244W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+177.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH007F120M3F2PTHG nxh007f120m3f2-d.pdf
NXH007F120M3F2PTHG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 149A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+241.65 EUR
20+235.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH004P120M3F2PTNG nxh004p120m3f2ptng-d.pdf
NXH004P120M3F2PTNG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+304.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH004P120M3F2PNG nxh004p120m3f2png-d.pdf
NXH004P120M3F2PNG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+322.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SG1577ASY
SG1577ASY
Hersteller: onsemi
Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RD0504T-P-TL-H
RD0504T-P-TL-H
Hersteller: onsemi
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
auf Bestellung 31500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
650+0.78 EUR
Mindestbestellmenge: 650
Im Einkaufswagen  Stück im Wert von  UAH
RD0506LS-SB-1H
RD0506LS-SB-1H
Hersteller: onsemi
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
567+0.89 EUR
Mindestbestellmenge: 567
Im Einkaufswagen  Stück im Wert von  UAH
MUN5136DW1T1G DTA115ED-D.PDF
MUN5136DW1T1G
Hersteller: onsemi
Description: MUN5136 - DUAL BIAS RESISTOR TRA
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8663+0.05 EUR
Mindestbestellmenge: 8663
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121P MC10H121-D.pdf
MC10H121P
Hersteller: onsemi
Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121M MC10H121-D.pdf
MC10H121M
Hersteller: onsemi
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121FNR2 MC10H121-D.pdf
MC10H121FNR2
Hersteller: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H121FNR2G MC10H121-D.pdf
MC10H121FNR2G
Hersteller: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H124P
MC10H124P
Hersteller: onsemi
Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC10H125L
MC10H125L
Hersteller: onsemi
Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NIV3071MTW4TWG nis3071-d.pdf
NIV3071MTW4TWG
Hersteller: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+4.84 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
NIV3071MTW4TWG nis3071-d.pdf
NIV3071MTW4TWG
Hersteller: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
auf Bestellung 23165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.40 EUR
10+7.82 EUR
100+6.04 EUR
500+5.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBG045N065SC1 ntbg045n065sc1-d.pdf
NTBG045N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+11.60 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG045N065SC1 ntbg045n065sc1-d.pdf
NTBG045N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
auf Bestellung 4216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.95 EUR
10+16.07 EUR
100+12.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG045N065SC1 nvbg045n065sc1-d.pdf
NVBG045N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVBG045N065SC1 nvbg045n065sc1-d.pdf
NVBG045N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.24 EUR
10+24.00 EUR
100+20.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NCV8768CD33ABR2G NCV8768C.PDF
NCV8768CD33ABR2G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
5000+1.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NCV8768CD33ABR2G NCV8768C.PDF
NCV8768CD33ABR2G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.24 EUR
10+2.66 EUR
25+2.25 EUR
100+1.79 EUR
250+1.56 EUR
500+1.42 EUR
1000+1.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 245 490 735 980 1197 1198 1199 1200 1201 1202 1203 1204 1205 1206 1207 1225 1470 1715 1960 2205 2450 2451  [ Nächste Seite >> ]