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FDMT800152DC FDMT800152DC onsemi fdmt800152dc-d.pdf Description: MOSFET N-CH 150V 8 DUAL COOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 3.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 75 V
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10+7.99 EUR
100+5.84 EUR
500+5.06 EUR
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BAS21HT1 BAS21HT1 onsemi bas21ht1-d.pdf Description: DIODE SWITCH 200MA 250V SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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NCP3231BMNTXG NCP3231BMNTXG onsemi ncp3231b-d.pdf Description: IC REG BUCK ADJ 25A 40QFN
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 90°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 40-QFN (6x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.45V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
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MT9M031I12STM-DPBR onsemi Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Bulk
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
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MT9P031I12STM-DR MT9P031I12STM-DR onsemi mt9p031-d.pdf Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
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BD13616STU BD13616STU onsemi BD136_138_140.pdf Description: TRANS PNP 45V 1.5A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
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MC74VHC1GT00P5T5G-L22088 MC74VHC1GT00P5T5G-L22088 onsemi mc74vhc1g00-d.pdf Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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LV5990M-TLM-H onsemi LV5990M.pdf Description: IC REG BUCK ADJ 3A 12MFPSJ
Packaging: Tape & Reel (TR)
Package / Case: 12-LSOP (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 360kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 12-MFPSJ
Synchronous Rectifier: No
Voltage - Output (Max): 17.1V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
Produkt ist nicht verfügbar
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LV5990M-TLM-H onsemi LV5990M.pdf Description: IC REG BUCK ADJ 3A 12MFPSJ
Packaging: Bulk
Package / Case: 12-LSOP (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 360kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 12-MFPSJ
Synchronous Rectifier: No
Voltage - Output (Max): 17.1V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
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SZMMBZ5252BLT1G SZMMBZ5252BLT1G onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 24V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
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30000+0.026 EUR
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SZMMBZ5252BLT1G SZMMBZ5252BLT1G onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 24V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
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NCV7692D10R2G NCV7692D10R2G onsemi ncv7692-d.pdf Description: IC LED DRIVER PS PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Power Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 50V
Grade: Automotive
Qualification: AEC-Q100
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NCV7692D10R2G NCV7692D10R2G onsemi ncv7692-d.pdf Description: IC LED DRIVER PS PWM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Power Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 50V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 65950 Stücke:
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10+1.9 EUR
25+1.6 EUR
100+1.25 EUR
250+1.08 EUR
500+0.98 EUR
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NJL4281DG NJL4281DG onsemi njl4281d-d.pdf Description: TRANS NPN 350V 15A TO264
Packaging: Tube
Package / Case: TO-264-5
Mounting Type: Through Hole
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
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NTMJST1D4N06CLTXG NTMJST1D4N06CLTXG onsemi ntmjst1d4n06cl-d.pdf Description: TRENCH 6 60V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
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3000+1.34 EUR
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NTMJST1D4N06CLTXG NTMJST1D4N06CLTXG onsemi ntmjst1d4n06cl-d.pdf Description: TRENCH 6 60V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
auf Bestellung 11943 Stücke:
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FOD2711ASDV FOD2711ASDV onsemi fod2711a-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
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1000+1.02 EUR
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FOD2711ASDV FOD2711ASDV onsemi fod2711a-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
auf Bestellung 2897 Stücke:
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MM3Z9V1B MM3Z9V1B onsemi mm3z9v1b-d.pdf Description: DIODE ZENER 9.1V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 450 nA @ 6 V
auf Bestellung 53845 Stücke:
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114+0.15 EUR
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500+0.073 EUR
1000+0.07 EUR
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SA13AG SA13AG onsemi SA5.0A_Series.pdf Description: TVS DIODE 13VWM 21.5VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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MM3Z2V7B MM3Z2V7B onsemi mm3z9v1b-d.pdf Description: DIODE ZENER 2.7V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 94 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
auf Bestellung 57684 Stücke:
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106+0.17 EUR
243+0.073 EUR
500+0.07 EUR
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FDMF3180 FDMF3180 onsemi fdmf3180?pdf=Y Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 162000 Stücke:
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FDMF3180 FDMF3180 onsemi fdmf3180?pdf=Y Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 164865 Stücke:
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1N746ATR 1N746ATR onsemi 1N4370A%2C1N4372A.1N746A%2C1N759A.pdf Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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NCP81382LMNTXG onsemi Description: IC REG SYNC BUCK CONV QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NCP81382LMNTXG onsemi Description: IC REG SYNC BUCK CONV QFN
Packaging: Bulk
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1N5379B 1N5379B onsemi 1N5333B-D%20Rev3.pdf Description: DIODE ZENER 110V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 83.6 V
Produkt ist nicht verfügbar
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NTBG080N120SC1 NTBG080N120SC1 onsemi ntbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
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NTBG080N120SC1 NTBG080N120SC1 onsemi ntbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
auf Bestellung 880 Stücke:
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NVBG080N120SC1 NVBG080N120SC1 onsemi nvbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
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NVBG080N120SC1 NVBG080N120SC1 onsemi nvbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
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NVH4L080N120SC1 NVH4L080N120SC1 onsemi nvh4l080n120sc1-d.pdf Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Qualification: AEC-Q101
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74LVTH162245GX 74LVTH162245GX onsemi 74lvt162245-d.pdf Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
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74VCX164245G 74VCX164245G onsemi 74VCX164245.pdf Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tray
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 54-FBGA (5.5x8)
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74LVTH162245G 74LVTH162245G onsemi 74lvt162245-d.pdf Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
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FSLV16211GX FSLV16211GX onsemi fslv16211-d.pdf Description: IC BUS SWITCH 12 X 1:1 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Circuit: 12 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 54-FBGA (5.5x8)
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NCP720BMT170TBG NCP720BMT170TBG onsemi ncp720-d.pdf Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NCP720BMT170TBG NCP720BMT170TBG onsemi ncp720-d.pdf Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NVMFS5C450NLAFT1G NVMFS5C450NLAFT1G onsemi nvmfs5c450nl-d.pdf Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C450NLAFT1G NVMFS5C450NLAFT1G onsemi nvmfs5c450nl-d.pdf Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
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FQE10N20CTU FQE10N20CTU onsemi FQE10N20C.pdf Description: MOSFET N-CH 200V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
Power Dissipation (Max): 12.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-126-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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FCP125N65S3 FCP125N65S3 onsemi fcp125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2265 Stücke:
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3+8.17 EUR
50+4.27 EUR
100+3.89 EUR
500+3.23 EUR
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74VHC573MX 74VHC573MX onsemi 74vhc573-d.pdf Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
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74VHC573MX 74VHC573MX onsemi 74vhc573-d.pdf Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
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NXH030F120M3F1PTG NXH030F120M3F1PTG onsemi nxh030f120m3f1-d.pdf Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
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NXH030P120M3F1PTG onsemi nxh030p120m3f1-d.pdf Description: MOSFET 2N-CH 1200V 42A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 15mA
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MPSA06 MPSA06 onsemi pzta06-d.pdf Description: TRANS NPN 80V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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500+0.2 EUR
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2000+0.16 EUR
5000+0.14 EUR
10000+0.12 EUR
50000+0.1 EUR
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DTC115TET1G DTC115TET1G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
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DTC115TET1G DTC115TET1G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
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DTC115TM3T5G DTC115TM3T5G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
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DTC115TM3T5G DTC115TM3T5G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
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DTC115TM3T5G DTC115TM3T5G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
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KSB772OS KSB772OS onsemi ksb772-d.pdf Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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FSB50450A FSB50450A onsemi fsb50450at-d.pdf Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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FSB50450AT FSB50450AT onsemi fsb50450at-d.pdf Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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FSB50450AT FSB50450AT onsemi fsb50450at-d.pdf Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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NRVSRD620VCTT4RG NRVSRD620VCTT4RG onsemi MSRD620CTR-D.PDF Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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NRVSRD620VCTT4RG NRVSRD620VCTT4RG onsemi MSRD620CTR-D.PDF Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 2327 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
13+1.36 EUR
100+1.06 EUR
500+0.84 EUR
1000+0.76 EUR
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NCV8501PDW50G NCV8501PDW50G onsemi ncv8501-d.pdf Description: IC REG LINEAR 5V 150MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 19 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV8800HDW50R2G NCV8800HDW50R2G onsemi ncv8800-d.pdf Description: IC REG BUCK 5V 1A 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
auf Bestellung 60716 Stücke:
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FDMT800152DC fdmt800152dc-d.pdf
FDMT800152DC
Hersteller: onsemi
Description: MOSFET N-CH 150V 8 DUAL COOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 3.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 75 V
auf Bestellung 2694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.79 EUR
10+7.99 EUR
100+5.84 EUR
500+5.06 EUR
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BAS21HT1 bas21ht1-d.pdf
BAS21HT1
Hersteller: onsemi
Description: DIODE SWITCH 200MA 250V SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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NCP3231BMNTXG ncp3231b-d.pdf
NCP3231BMNTXG
Hersteller: onsemi
Description: IC REG BUCK ADJ 25A 40QFN
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 90°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 40-QFN (6x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.45V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 5000 Stücke:
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Anzahl Preis
165+2.88 EUR
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MT9M031I12STM-DPBR
Hersteller: onsemi
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Bulk
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
auf Bestellung 884 Stücke:
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Anzahl Preis
14+35.22 EUR
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MT9P031I12STM-DR mt9p031-d.pdf
MT9P031I12STM-DR
Hersteller: onsemi
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
auf Bestellung 20 Stücke:
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BD13616STU BD136_138_140.pdf
BD13616STU
Hersteller: onsemi
Description: TRANS PNP 45V 1.5A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
60+0.71 EUR
120+0.63 EUR
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MC74VHC1GT00P5T5G-L22088 mc74vhc1g00-d.pdf
MC74VHC1GT00P5T5G-L22088
Hersteller: onsemi
Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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LV5990M-TLM-H LV5990M.pdf
Hersteller: onsemi
Description: IC REG BUCK ADJ 3A 12MFPSJ
Packaging: Tape & Reel (TR)
Package / Case: 12-LSOP (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 360kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 12-MFPSJ
Synchronous Rectifier: No
Voltage - Output (Max): 17.1V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
Produkt ist nicht verfügbar
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LV5990M-TLM-H LV5990M.pdf
Hersteller: onsemi
Description: IC REG BUCK ADJ 3A 12MFPSJ
Packaging: Bulk
Package / Case: 12-LSOP (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 360kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 12-MFPSJ
Synchronous Rectifier: No
Voltage - Output (Max): 17.1V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
auf Bestellung 29000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.1 EUR
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SZMMBZ5252BLT1G mmbz5221blt1-d.pdf
SZMMBZ5252BLT1G
Hersteller: onsemi
Description: DIODE ZENER 24V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.038 EUR
6000+0.034 EUR
9000+0.031 EUR
15000+0.029 EUR
21000+0.028 EUR
30000+0.026 EUR
Mindestbestellmenge: 3000
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SZMMBZ5252BLT1G mmbz5221blt1-d.pdf
SZMMBZ5252BLT1G
Hersteller: onsemi
Description: DIODE ZENER 24V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
auf Bestellung 89920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
106+0.17 EUR
173+0.1 EUR
500+0.074 EUR
1000+0.065 EUR
Mindestbestellmenge: 63
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NCV7692D10R2G ncv7692-d.pdf
NCV7692D10R2G
Hersteller: onsemi
Description: IC LED DRIVER PS PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Power Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 50V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.78 EUR
6000+0.72 EUR
Mindestbestellmenge: 3000
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NCV7692D10R2G ncv7692-d.pdf
NCV7692D10R2G
Hersteller: onsemi
Description: IC LED DRIVER PS PWM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Power Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 50V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 65950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.9 EUR
25+1.6 EUR
100+1.25 EUR
250+1.08 EUR
500+0.98 EUR
1000+0.89 EUR
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NJL4281DG njl4281d-d.pdf
NJL4281DG
Hersteller: onsemi
Description: TRANS NPN 350V 15A TO264
Packaging: Tube
Package / Case: TO-264-5
Mounting Type: Through Hole
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+5.17 EUR
Mindestbestellmenge: 100
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NTMJST1D4N06CLTXG ntmjst1d4n06cl-d.pdf
NTMJST1D4N06CLTXG
Hersteller: onsemi
Description: TRENCH 6 60V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.34 EUR
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NTMJST1D4N06CLTXG ntmjst1d4n06cl-d.pdf
NTMJST1D4N06CLTXG
Hersteller: onsemi
Description: TRENCH 6 60V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
auf Bestellung 11943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+2.87 EUR
100+1.98 EUR
500+1.64 EUR
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FOD2711ASDV fod2711a-d.pdf
FOD2711ASDV
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
auf Bestellung 2000 Stücke:
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Anzahl Preis
1000+1.02 EUR
2000+0.97 EUR
Mindestbestellmenge: 1000
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FOD2711ASDV fod2711a-d.pdf
FOD2711ASDV
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
auf Bestellung 2897 Stücke:
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Anzahl Preis
7+2.87 EUR
10+1.83 EUR
100+1.3 EUR
500+1.09 EUR
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MM3Z9V1B mm3z9v1b-d.pdf
MM3Z9V1B
Hersteller: onsemi
Description: DIODE ZENER 9.1V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 450 nA @ 6 V
auf Bestellung 53845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
114+0.15 EUR
234+0.076 EUR
500+0.073 EUR
1000+0.07 EUR
Mindestbestellmenge: 72
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SA13AG SA5.0A_Series.pdf
SA13AG
Hersteller: onsemi
Description: TVS DIODE 13VWM 21.5VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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MM3Z2V7B mm3z9v1b-d.pdf
MM3Z2V7B
Hersteller: onsemi
Description: DIODE ZENER 2.7V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 94 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
auf Bestellung 57684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
106+0.17 EUR
243+0.073 EUR
500+0.07 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
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FDMF3180 fdmf3180?pdf=Y
FDMF3180
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 162000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.74 EUR
Mindestbestellmenge: 3000
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FDMF3180 fdmf3180?pdf=Y
FDMF3180
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 164865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
10+5.1 EUR
100+3.61 EUR
500+2.98 EUR
1000+2.77 EUR
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1N746ATR 1N4370A%2C1N4372A.1N746A%2C1N759A.pdf
1N746ATR
Hersteller: onsemi
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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NCP81382LMNTXG
Hersteller: onsemi
Description: IC REG SYNC BUCK CONV QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NCP81382LMNTXG
Hersteller: onsemi
Description: IC REG SYNC BUCK CONV QFN
Packaging: Bulk
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
437+1.13 EUR
Mindestbestellmenge: 437
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1N5379B 1N5333B-D%20Rev3.pdf
1N5379B
Hersteller: onsemi
Description: DIODE ZENER 110V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 83.6 V
Produkt ist nicht verfügbar
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NTBG080N120SC1 ntbg080n120sc1-d.pdf
NTBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+10.1 EUR
Mindestbestellmenge: 800
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NTBG080N120SC1 ntbg080n120sc1-d.pdf
NTBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.13 EUR
10+14.08 EUR
100+12.36 EUR
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NVBG080N120SC1 nvbg080n120sc1-d.pdf
NVBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG080N120SC1 nvbg080n120sc1-d.pdf
NVBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.23 EUR
10+11.95 EUR
100+10.1 EUR
Mindestbestellmenge: 2
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NVH4L080N120SC1 nvh4l080n120sc1-d.pdf
NVH4L080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 51642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.17 EUR
30+14.95 EUR
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74LVTH162245GX 74lvt162245-d.pdf
74LVTH162245GX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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74VCX164245G 74VCX164245.pdf
74VCX164245G
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tray
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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74LVTH162245G 74lvt162245-d.pdf
74LVTH162245G
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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FSLV16211GX fslv16211-d.pdf
FSLV16211GX
Hersteller: onsemi
Description: IC BUS SWITCH 12 X 1:1 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Circuit: 12 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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NCP720BMT170TBG ncp720-d.pdf
NCP720BMT170TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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NCP720BMT170TBG ncp720-d.pdf
NCP720BMT170TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1737+0.29 EUR
Mindestbestellmenge: 1737
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NVMFS5C450NLAFT1G nvmfs5c450nl-d.pdf
NVMFS5C450NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C450NLAFT1G nvmfs5c450nl-d.pdf
NVMFS5C450NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FQE10N20CTU FQE10N20C.pdf
FQE10N20CTU
Hersteller: onsemi
Description: MOSFET N-CH 200V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
Power Dissipation (Max): 12.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-126-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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FCP125N65S3 fcp125n65s3-d.pdf
FCP125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
50+4.27 EUR
100+3.89 EUR
500+3.23 EUR
1000+3.07 EUR
Mindestbestellmenge: 3
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74VHC573MX 74vhc573-d.pdf
74VHC573MX
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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74VHC573MX 74vhc573-d.pdf
74VHC573MX
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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NXH030F120M3F1PTG nxh030f120m3f1-d.pdf
NXH030F120M3F1PTG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+109.3 EUR
28+84.6 EUR
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NXH030P120M3F1PTG nxh030p120m3f1-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 42A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 15mA
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+100.81 EUR
28+76.7 EUR
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MPSA06 pzta06-d.pdf
MPSA06
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
auf Bestellung 63316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
10000+0.12 EUR
50000+0.1 EUR
Mindestbestellmenge: 27
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DTC115TET1G dtc115t-d.pdf
DTC115TET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TET1G dtc115t-d.pdf
DTC115TET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TM3T5G dtc115t-d.pdf
DTC115TM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TM3T5G dtc115t-d.pdf
DTC115TM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TM3T5G dtc115t-d.pdf
DTC115TM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 152000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8535+0.067 EUR
Mindestbestellmenge: 8535
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KSB772OS ksb772-d.pdf
KSB772OS
Hersteller: onsemi
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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FSB50450A fsb50450at-d.pdf
FSB50450A
Hersteller: onsemi
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Produkt ist nicht verfügbar
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FSB50450AT fsb50450at-d.pdf
FSB50450AT
Hersteller: onsemi
Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
64+7.61 EUR
Mindestbestellmenge: 64
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FSB50450AT fsb50450at-d.pdf
FSB50450AT
Hersteller: onsemi
Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Produkt ist nicht verfügbar
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NRVSRD620VCTT4RG MSRD620CTR-D.PDF
NRVSRD620VCTT4RG
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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NRVSRD620VCTT4RG MSRD620CTR-D.PDF
NRVSRD620VCTT4RG
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 2327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
13+1.36 EUR
100+1.06 EUR
500+0.84 EUR
1000+0.76 EUR
Mindestbestellmenge: 11
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NCV8501PDW50G ncv8501-d.pdf
NCV8501PDW50G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 19 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV8800HDW50R2G ncv8800-d.pdf
NCV8800HDW50R2G
Hersteller: onsemi
Description: IC REG BUCK 5V 1A 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
auf Bestellung 60716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
151+3.16 EUR
Mindestbestellmenge: 151
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