NDD03N40ZT4G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 400V 2.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1110+ | 0.44 EUR |
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Technische Details NDD03N40ZT4G onsemi
Description: MOSFET N-CH 400V 2.1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NDD03N40ZT4G | ON Semiconductor |
MOSFET NFET DPAK 60V 2.4A 3.4OHM |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NDD03N40ZT4G |
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Hersteller: ON Semiconductor
MOSFET NFET DPAK 60V 2.4A 3.4OHM
MOSFET NFET DPAK 60V 2.4A 3.4OHM
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH